AOD4104

AOD4104 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4104 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. -RoHS Compliant -Halogen Free* TO-252 D-PAK Features VDS (V) = 25V ID = 75A (VGS = 10V) RDS(ON) < 3.6m Ω (VGS = 20V) RDS(ON) < 4.5m Ω (VGS = 12V) RDS(ON) < 5.4m Ω (VGS = 10V) 100% UIS Tested! 100% Rg Tested! Top View D Bottom View D G S S G S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,G,I Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C TC=25°C G Maximum 25 ±30 75 75 200 30 135 100 50 2.5 1.6 -55 to 175 Units V V A A mJ W W °C Max 20 50 1.5 Units °C/W °C/W °C/W VGS TC=100°C ID IDM IAR EAR PD PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case B Symbol RθJA RθJC Typ 16 40 1 Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4104 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=20V, VGS=0V TJ=55°C VDS=0V, VGS= ±30V VDS=VGS ID=250 µA VGS=12V, VDS=5V VGS=20V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=12V, ID=20A VGS=10V, ID=20A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V 2 200 3 4.2 3.7 4.5 75 0.7 1 55 2100 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 850 400 0.35 40 VGS=10V, VDS=12.5V, I D=20A 33 11 14 12 VGS=10V, VDS=12.5V, RL=0.68 Ω , RGEN=3Ω IF=20A, dI/dt=100A/µs IF=20A, dI/dt=100A/µs 19 15 8.5 42 34 1 50 2400 3.6 5 4.5 5.4 S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC mΩ 3 Min 25 0.005 1 5 100 4 Typ Max Units V µA nA V A STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(12V) Total Gate Charge Qg(10V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using