AOD5T40P

AOD5T40P 400V,3.9A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 500V IDM 15A RDS(ON),max < 1.45Ω Qg,typ 5nC Eoss @ 320V 0.9µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom TO-252 DPAK Top View D Bottom View D D G S G G S S AOD5T40P Orderable Part Number Package Type Form Minimum Order Quantity AOD5T40P TO-252 Tape & Reel 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C TC=100°C C Units V ±30 V 3.9 ID A 2.5 15 IDM L=1mH Maximum 400 IAR 5 A Repetitive avalanche energy C EAR 13 mJ Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS 108 50 5 52 0.4 -55 to 150 mJ W W/°C °C 300 °C dv/dt PD TJ, TSTG TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA Maximum Case-to-sink A RθCS Maximum Junction-to-CaseD,F RθJC Rev.1.0: March 2014 V/ns Typical Maximum Units 45 55 °C/W 2 0.5 2.4 °C/W °C/W www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 400 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 500 ID=250µA, VGS=0V 0.39 1 VDS=320V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VDS=5V, ID=250µA gFS VSD RDS(ON) V/ oC VDS=400V, VGS=0V Gate Threshold Voltage Static Drain-Source On-Resistance IGSS VGS(th) V µA ±100 3 nA 4.2 5 V VGS=10V, ID=1A 1.2 1.45 Ω Forward Transconductance VDS=40V, ID=1A 1.9 Diode Forward Voltage IS=1A,VGS=0V 0.8 1 V S IS Maximum Body-Diode Continuous Current 3.9 A ISM Maximum Body-Diode Pulsed Current C 15 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Co(er) Effective output capacitance, energy related I Crss Effective output capacitance, time related J Reverse Transfer Capacitance Rg Gate resistance Co(tr) 273 pF 16 pF 18 pF 30 pF VGS=0V, VDS=100V, f=1MHz 1.5 pF f=1MHz 2.3 Ω VGS=10V, VDS=320V, ID=3.9A 1.8 nC VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 320V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge 5 9 nC Qgs Gate Source Charge Qgd Gate Drain Charge 1.4 nC tD(on) Turn-On DelayTime 17 ns tr Turn-On Rise Time 14 ns tD(off) Turn-Off DelayTime VGS=10V, VDS=200V, ID=3.9A, RG=25Ω 18 ns tf trr 9 ns Body Diode Reverse Recovery Time IF=3.9A,dI/dt=100A/µs,VDS=100V 172 Qrr Body Diode Reverse Recovery Charge IF=3.9A,dI/dt=100A/µs,VDS=100V 1.1 ns µC Turn-Off Fall Time A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using