AOK50B65M2

AOK50B65M2 650V, 50A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary • Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness VCE IC (TC=100°C) 650V 50A VCE(sat) (TJ=25°C) 1.72V Applications • Motor Drives • Servo and General Purpose Inverters • Other Hard Switching Applications C TO-247 G AOK50B65M2 Orderable Part Number G C E E Package Type TO247 AOK50B65M2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Form Minimum Order Quantity Tube 240 AOK50B65M2 650 Units V ±30 V Gate-Emitter Voltage V GE Continuous Collector TC=25°C TC=100°C Current IC Pulsed Collector Current, Limited by TJmax I CM 150 A Turn off SOA, VCE≤650V, Limited by TJmax I LM 150 A Continuous Diode Forward Current TC=25°C TC=100°C IF 100 50 100 50 A A Diode Pulsed Current, Limited by TJmax I FM 150 A Short circuit withstanding time 1) VGE=15V, VCC≤400V, TJ≤175°C t SC 5 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range PD T J , T STG 500 250 -55 to 175 Maximum lead temperature for soldering TL 300 purpose, 1/8" from case for 5 seconds Thermal Characteristics AOK50B65M2 Parameter Symbol R θ JA 40 Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case 0.3 R θ JC Maximum Diode Junction-to-Case R θ JC 0.7 1) Allowed number of short circuits: 1s. Rev.1.0: May 2015 www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 - - V V CE(sat) VGE=15V, IC=50A Symbol VF Collector-Emitter Saturation Voltage VGE=0V, IC=50A Diode Forward Voltage V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Zero Gate Voltage Collector Current VCE=650V, VGE=0V TJ=25°C - 1.72 2.2 TJ=125°C - 2.08 - TJ=175°C - 2.26 - V TJ=25°C - 1.55 1.95 TJ=125°C - 1.63 - TJ=175°C - 1.59 - - 4.8 - V V TJ=25°C - - 10 TJ=125°C - - 1000 TJ=175°C - - 15000 µA I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=50A - 35 - S - 2848 - pF - 368 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCC=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 118 - pF Qg Total Gate Charge - 102 - nC Q ge Gate to Emitter Charge - 28 - nC Q gc Gate to Collector Charge - 42 - nC - 222 - A VGE=0V, VCC=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 14 - Ω ns I C(SC) VGE=15V, VCC=520V, IC=50A VGE=15V, VCC=400V, tsc≤5us, TJ≤175°C Short circuit collector current t D(on) Turn-On DelayTime - 46 - tr Turn-On Rise Time - 68 - ns t D(off) Turn-Off Delay Time - 182 - ns tf Turn-Off Fall Time - 49 - ns E on Turn-On Energy - 2.09 - mJ E off Turn-Off Energy - 1.03 - mJ E total t rr Total Switching Energy - 3.12 - mJ Diode Reverse Recovery Time - 327 - Q rr Diode Reverse Recovery Charge TJ=25°C VGE=15V, VCC=400V, IC=50A, RG=6Ω - 1.3 - ns µC Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) - 8 - A t D(on) Turn-On DelayTime - 44 - ns tr Turn-On Rise Time - 70 - ns t D(off) Turn-Off Delay Time - 224 - ns tf Turn-Off Fall Time - 44 - ns E on Turn-On Energy - 2.54 - mJ E off Turn-Off Energy - 1.56 - mJ E total t rr Total Switching Energy - 4.1 - mJ Diode Reverse Recovery Time - 508 - Q rr Diode Reverse Recovery Charge - 3.4 - ns µC I rm Diode Peak Reverse Recovery Current - 12 - A TJ=25°C IF=50A, di/dt=200A/µs, VCC=400V I rm TJ=175°C VGE=15V, VCC=400V, IC=50A, RG=6Ω TJ=175°C IF=50A, di/dt=200A/µs, VCC=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: May 2015 www.aosmd.com Page 2 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 180 20V 17V 20V 17V 150 160 15V 15V 120 IC (A) IC (A) 13V 120 11V 80 13V 90 11V 60 9V 9V 40 30 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 2.5 3 VCE (V) Figure 2: Output Characteristic (Tj=175°C) VCE (V) Figure 1: Output Characteristic (Tj=25°C) 100 100 VCE=20V -40°C 80 60 25°C 60 175°C IF (A) IC (A) 80 40 175°C 40 25°C 20 20 -40°C 0 0 3 6 9 12 VGE (V) Figure 3: Transfer Characteristic 15 0 0.5 1 1.5 2 VF (V) Figure 4: Diode Characteristic 5 3 4 2.5 IC=100A 100A VSD (V) VCE(sat) (V) 2 3 IC=50A 50A 1.5 2 5A 1 1 IC=25A 0.5 0 IF=1A 0 0 25 75 100 125 150 175 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: May 2015 50 www.aosmd.com 0 25 50 75 100 125 150 175 Temperature (°C) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 100000 VCE=520V IC=50A 12 Capacitance (pF) VGE (V) 10000 9 6 Cies 1000 Coes 100 3 Cres 0 10 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 120 0 8 16 24 32 VCE (V) Figure 8: Capacitance Characteristic 40 25 50 175 600 Power Disspation (W) 500 400 300 200 100 0 75 100 125 150 120 1E-02 100 1E-03 80 1E-04 ICE(S) (A) Current rating IC (A) TCASE (°C) Figure 10: Power Disspation as a Function of Case 60 VCE=650V 1E-05 40 1E-06 20 1E-07 0 VCE=520V 1E-08 25 50 75 100 125 150 175 TCASE (°C) Figure 11: Current De-rating Rev.1.0: May 2015 0 25 50 75 100 125 150 175 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature www.aosmd.com Page 4 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Td(on) Tr 1000 100 10 100 10 1 1 20 40 60 80 IC (A) Figure 13: Switching Time vs. IC (Tj=175°C, VGE=15V, VCE=400V, Rg=6Ω) 10000 100 0 1000 10 20 30 40 50 Rg (Ω) Figure 14: Switching Time vs. Rg (Tj=175°C, VGE=15V, VCE=400V, IC=50A) 60 25 175 7 Td(off) Tf Td(on) Tr 6 5 VGE(TH) (V) Switching Time (ns) Td(off) Tf Td(on) Tr 1000 Switching Time (ns) Switching Time (ns) 10000 100 4 3 10 2 1 1 25 50 100 125 150 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V, VCE=400V, IC=50A, Rg=6Ω) Rev.1.0: May 2015 75 175 www.aosmd.com 0 50 75 100 125 150 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 Eoff 12 Eon 8 Etotal Switching Energy (mJ) SwitchIng Energy (mJ) Eoff Eon 9 6 3 Etotal 6 4 2 0 0 20 40 60 80 100 0 10 5 30 40 50 60 5 Eoff Eoff Eon 4 Eon 4 Etotal Switching Energy (mJ) Switching Energy (mJ) 20 Rg (Ω) Figure 18: Switching Loss vs. Rg (Tj=175°C, VGE=15V, VCE=400V, IC=50A) IC (A) Figure 17: Switching Loss vs. IC (Tj=175°C, VGE=15V, VCE=400V, Rg=6Ω) 3 2 1 Etotal 3 2 1 0 25 50 100 125 150 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V, VCE=400V, IC=50A, Rg=6Ω) Rev.1.0: May 2015 75 175 www.aosmd.com 0 200 250 300 350 400 450 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=175°C, VGE=15V, IC=50A, Rg=6Ω) 500 Page 6 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4500 100 600 3600 80 480 60 360 15 Trr 25°C S 6 25°C 900 25°C Irm 175°C 40 60 3 175°C 0 0 80 0 20 100 IF (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 750 15 80 600 12 60 450 Irm (A) Qrr (nC) 2700 25°C Qrr 1800 60 80 100 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 40 175°C Trr 9 S 175°C 40 100 Trr (ns) 4500 3600 S 120 20 25°C 0 9 240 40 Qrr 20 Trr (ns) Irm (A) Qrr (nC) 175°C 2700 1800 12 175°C 300 6 25°C 25°C 175°C 900 20 150 3 175°C 25°C Irm 0 0 100 200 300 400 500 600 di/dt (A/µs) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V, VCE=400V, IF=50A) Rev.1.0: May 2015 S 0 www.aosmd.com 0 100 200 300 400 500 600 di/dt (A/µs) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V, VCE=400V, IF=50A) Page 7 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT 1 10 ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.7°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: May 2015 www.aosmd.com Page 8 of 9 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.1.0: May 2015 www.aosmd.com Page 9 of 9