AOK75B65H1

AOK75B65H1 650V, 75A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary • Latest Alpha IGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Very high switching speed • Low turn-off switching loss and softness • Very good EMI behavior • Short-circuit ruggedness VCE IC (TC=100°C) 650V 75A VCE(sat) (TJ=25°C) 1.85V Applications • Welding Machines • Motor Drives • UPS & Solar Inverters • Very High Switching Frequency Applications C TO-247 G G AOK75B65H1 Orderable Part Number C E Package Type AOK75B65H1 TO247 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE E Form Minimum Order Quantity Tube 240 AOK75B65H1 650 Units V ±30 V Gate-Emitter Voltage V GE Continuous Collector TC=25°C TC=100°C Current IC Pulsed Collector Current, Limited by TJmax I CM 225 A Turn off SOA, VCE≤650V, Limited by TJmax I LM 225 A Continuous Diode Forward Current TC=25°C TC=100°C IF 150 75 54 27 A A Diode Pulsed Current, Limited by TJmax I FM 225 A Short circuit withstanding time 1) VGE=15V, VCC≤300V, TJ≤175°C t SC 5 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range PD T J , T STG 556 278 -55 to 175 Maximum lead temperature for soldering TL 300 purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol AOK75B65H1 R θ JA Maximum Junction-to-Ambient 40 Maximum IGBT Junction-to-Case R θ JC 0.27 Maximum Diode Junction-to-Case R θ JC 1 1) Allowed number of short circuits: 1s. Rev.1.0: August 2015 www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 - - V V CE(sat) VGE=15V, IC=75A Symbol VF Collector-Emitter Saturation Voltage VGE=0V, IC=75A Diode Forward Voltage V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Zero Gate Voltage Collector Current VCE=650V, VGE=0V TJ=25°C - 1.85 2.4 TJ=125°C - 2.08 - TJ=175°C - 2.21 - V TJ=25°C - 2.15 2.7 TJ=125°C - 2.31 - TJ=175°C - 2.22 - - 4.7 - V V TJ=25°C - - 10 TJ=125°C - - 1000 TJ=175°C - - 15000 µA I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=75A - 60 - S - 3350 - pF - 298 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCC=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 114 - pF Qg Total Gate Charge - 109 - nC Q ge Gate to Emitter Charge - 28 - nC Q gc Gate to Collector Charge - 43 - nC - 448 - A VGE=0V, VCC=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 13 - Ω ns I C(SC) VGE=15V, VCC=520V, IC=75A VGE=15V, VCC=300V, tsc≤5us, TJ≤175°C Short circuit collector current t D(on) Turn-On DelayTime - 47 - tr Turn-On Rise Time - 95 - ns t D(off) Turn-Off Delay Time - 175 - ns tf Turn-Off Fall Time - 114 - ns E on Turn-On Energy - 3.77 - mJ E off Turn-Off Energy - 2.04 - mJ E total t rr Total Switching Energy - 5.81 - mJ Diode Reverse Recovery Time - 295 - Q rr Diode Reverse Recovery Charge TJ=25°C VGE=15V, VCC=400V, IC=75A, RG=4Ω - 1.2 - ns µC Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) - 7.9 - A t D(on) Turn-On DelayTime - 46 - ns tr Turn-On Rise Time - 94 - ns t D(off) Turn-Off Delay Time - 202 - ns tf Turn-Off Fall Time - 117 - ns E on Turn-On Energy - 3.91 - mJ E off Turn-Off Energy - 2.61 - mJ E total t rr Total Switching Energy - 6.52 - mJ Diode Reverse Recovery Time - 479 - Q rr Diode Reverse Recovery Charge - 3 - ns µC I rm Diode Peak Reverse Recovery Current - 12 - A TJ=25°C IF=75A, dI/dt=200A/µs, VCC=400V I rm TJ=175°C VGE=15V, VCC=400V, IC=75A, RG=4Ω TJ=175°C IF=75A, dI/dt=200A/µs, VCC=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: August 2015 www.aosmd.com Page 2 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 180 180 17V 20V 11V 150 20V 13V 17V 150 13V 15V 15V 120 11V 120 IC (A) IC (A) 9V 90 60 9V 90 60 VGE= 7V 30 VGE=7V 30 0 0 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 3 3.5 150 175 VCE (V) Figure 2: Output Characteristic (Tj=175°C) VCE (V) Figure 1: Output Characteristic (Tj=25°C) 100 100 VCE=20V -40°C 80 80 60 60 175°C IF (A) IC (A) 25°C 40 40 175°C 25°C 20 20 -40°C 0 0 3 6 9 12 VGE (V) Figure 3: Transfer Characteristic 15 0 0.5 1 1.5 2 2.5 VF (V) Figure 4: Diode Characteristic 5 5 IC=150A 4 4 VSD (V) VCE(sat) (V) 150A 3 IC=75A 2 3 75A 2 5A IC=37.5A 1 1 IF=1A 0 0 0 25 50 75 100 125 150 175 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: August 2015 www.aosmd.com 0 25 50 75 100 125 Temperature (°C) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 100000 VCE=520V IC=75A Capacitance (pF) VGE (V) 12 9 6 10000 Cies 1000 Coes 100 Cres 3 10 0 1 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 120 0 8 16 24 32 VCE (V) Figure 8: Capacitance Characteristic 40 25 50 175 750 Power Disspation (W) 600 450 300 150 0 75 100 125 150 TCASE (°C) Figure 10: Power Disspation as a Function of Case 1E-02 200 1E-03 1E-04 120 ICE(S) (A) Current rating IC (A) 160 80 VCE=650V 1E-05 VCE=520V 1E-06 40 1E-07 0 1E-08 25 50 75 100 125 150 175 TCASE (°C) Figure 11: Current De-rating Rev.1.0: August 2015 0 25 50 75 100 125 150 175 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature www.aosmd.com Page 4 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Td(on) Tr 1000 100 10 100 1 10 1 30 50 70 90 110 130 IC (A) Figure 13: Switching Time vs. IC (Tj=175°C, VGE=15V, VCE=400V, Rg=4Ω) 10000 150 0 1000 8 16 24 32 Rg (Ω) Figure 14: Switching Time vs. Rg (Tj=175°C, VGE=15V, VCE=400V, IC=75A) 40 25 175 7 Td(off) Tf Td(on) Tr 6 5 VGE(TH) (V) Switching Time (ns) Td(off) Tf Td(on) Tr 1000 Switching Time (ns) Switching Time (ns) 10000 100 4 3 10 2 1 1 25 50 100 125 150 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V, VCE=400V, IC=75A, Rg=4Ω) Rev.1.0: August 2015 75 175 www.aosmd.com 0 50 75 100 125 150 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 15 Eoff 16 Eon 12 Etotal Etotal Switching Energy (mJ) SwitchIng Energy (mJ) Eoff Eon 12 8 9 6 4 3 0 0 30 50 70 90 110 130 150 0 8 24 32 40 10 10 Eoff Eoff Eon 8 Eon 8 Etotal Switching Energy (mJ) Switching Energy (mJ) 16 Rg (Ω) Figure 18: Switching Loss vs. Rg (Tj=175°C, VGE=15V, VCE=400V, IC=75A) IC (A) Figure 17: Switching Loss vs. IC (Tj=175°C, VGE=15V, VCE=400V, Rg=4Ω) 6 4 Etotal 6 4 2 2 0 0 25 50 75 100 125 150 175 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V, VCE=400V, IC=75A, Rg=4Ω) Rev.1.0: August 2015 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=175°C, VGE=15V, IC=75A, Rg=4Ω) 500 Page 6 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 3000 50 175°C 15 480 12 175°C Qrr 30 360 25°C 240 25°C 6 175°C 20 1000 175°C 120 10 500 25°C Irm 0 30 50 70 90 110 0 30 150 4500 90 4000 80 3500 25°C 2000 40 Qrr 1500 12 175°C Trr 360 9 25°C 240 6 30 175°C 175°C 1000 20 Irm 500 25°C 0 100 Trr (ns) 50 70 15 60 2500 90 110 130 150 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 480 Irm (A) 3000 50 600 70 175°C S 0 0 130 3 25°C IF (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) Qrr (nC) 9 Trr S 1500 Trr (ns) 40 2000 Irm (A) Qrr (nC) 2500 600 S 3500 120 0 25°C S 0 200 300 400 500 600 di/dt (A/µs) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V, VCE=400V, IF=75A) Rev.1.0: August 2015 3 10 www.aosmd.com 0 100 200 300 400 500 600 di/dt (A/µs) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V, VCE=400V, IF=75A) Page 7 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.27°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT 1 10 ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: August 2015 www.aosmd.com Page 8 of 9 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.1.0: August 2015 www.aosmd.com Page 9 of 9