AON1606_001

AON1606 20V N-Channel MOSFET General Description Product Summary The AON1606 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ideal for load switch applications. ID (at VGS=4.5V) 20V 0.7A RDS(ON) (at VGS =4.5V) < 275mW RDS(ON) (at VGS =2.5V) < 335mW RDS(ON) (at VGS =1.8V) < 390mW Typical ESD protection HBM Class 1C VDS D DFN 1.0x0.6 Top View Bottom View G S D G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current E VGS TA=25°C Pulsed Drain Current C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A B Maximum Junction-to-Ambient Maximum Junction-to-Ambient B Rev.2.0: March 2019 Steady-State t ≤ 10s Steady-State A A 0.9 W 0.55 TJ, TSTG Symbol t ≤ 10s V 2.8 PD TA=70°C ±8 0.55 IDM TA=25°C Units V 0.7 ID TA=70°C Maximum 20 RqJA RqJA www.aosmd.com -55 to 150 Typ 80 110 200 280 °C Max 100 140 245 340 Units °C/W °C/W °C/W °C/W Page 1 of 5 AON1606 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±8V Gate Threshold Voltage On state drain current VDS=VGS, ID=250mA 0.3 VGS=4.5V, VDS=5V 2.8 TJ=55°C 5 ±10 mA 1.0 V 225 275 313 380 VGS=2.5V, ID=0.3A 265 335 mW VGS=1.8V, ID=0.2A 300 390 mW VGS=1.5V, ID=0.1A 355 mW S TJ=125°C A gFS Forward Transconductance VDS=5V, ID=0.4A 2 VSD Diode Forward Voltage IS=0.4A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current E DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance mA 0.65 VGS=4.5V, ID=0.4A Static Drain-Source On-Resistance Units V 1 Zero Gate Voltage Drain Current RDS(ON) Max 20 VDS=20V, VGS=0V IDSS ID(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=4.5V, VDS=10V, ID=0.4A mW 1.2 V -0.7 A 62.5 pF 12.5 pF 9 pF 5.5 W 0.85 nC 0.1 nC Qgs Gate Source Charge Qgd Gate Drain Charge 0.25 nC tD(on) Turn-On DelayTime 2 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=4.5V, VDS=10V, RL=25W, RGEN=3W 4 ns 18 ns 8 ns A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. B. The value of R qJA is measured with the device mounted on FR-4 minimum pad board, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. C. The static characteristics in Figures 1 to 6 are obtained using