AON2800

AON2800 20V Dual N-Channel MOSFET General Description Product Summary The AON2800 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=4.5V) VDS 20V 4.5A RDS(ON) (at VGS=4.5V) < 47mΩ RDS(ON) (at VGS=2.5V) < 65mΩ ESD Protected DFN 2x2 Package S1 G1 D2 D1 D2 Pin 1 G1 D1 G2 G2 S2 Pin 1 Top S1 Bottom Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Ambient B Rev 1: August 2011 Steady-State t ≤ 10s Steady-State V A 1.5 W 0.95 TJ, TSTG Symbol t ≤ 10s ±8 24 PD TA=70°C Units V 3.8 IDM TA=25°C Power Dissipation B Maximum 20 4.5 ID TA=70°C S2 RθJA RθJA www.aosmd.com -55 to 150 Typ 35 65 120 175 °C Max 45 85 155 235 Units °C/W °C/W °C/W °C/W Page 1 of 5 AON2800 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C 20 µA 0.8 1.2 V 37 47 55 70 VGS=2.5V, ID=3A 47 65 Gate-Body leakage current VDS=0V, VGS= ±8V VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 24 VGS=4.5V, ID=4A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=4A 14 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd mΩ mΩ S 1 V 1.5 A 285 360 435 pF VGS=0V, VDS=10V, f=1MHz 45 65 85 pF 30 50 70 pF VGS=0V, VDS=0V, f=1MHz 1.7 3.5 5.3 Ω 4.15 6 nC SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs µA 5 Gate Threshold Voltage Output Capacitance Units V 1 VGS(th) Coss Max 20 VDS=20V, VGS=0V IGSS RDS(ON) Typ VGS=4.5V, VDS=10V, ID=4A 0.55 nC Gate Drain Charge 1.15 nC tD(on) Turn-On DelayTime 9.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 43 ns 26 ns tf Turn-Off Fall Time 39 ns trr Body Diode Reverse Recovery Time Qrr IF=4A, dI/dt=100A/µs 11 Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs 3 ns nC VGS=4.5V, VDS=10V, RL=2.5Ω, RGEN=3Ω A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. B. The value of R θJA is measured with the device mounted on a minimum pad board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. C. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. D. The static characteristics in Figures 1 to 6 are obtained using