AON6416

AON6416 30V N-Channel MOSFET SDMOS TM General Description Product Summary The AON6416 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 30V 22A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 8mΩ RDS(ON) (at VGS = 4.5V) < 14mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current V A 110 14 IDSM TA=70°C ±20 17 IDM TA=25°C Units V 22 ID TC=100°C Maximum 30 A 11 Avalanche Current C IAR 30 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR 45 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 1: November 2010 2.4 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.5 TJ, TSTG Symbol t ≤ 10s W 12.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 31 PD -55 to 150 Typ 17 44 3.4 °C Max 21 53 4 Units °C/W °C/W °C/W Page 1 of 7 AON6416 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C 50 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 110 100 nA 2.4 V 6.8 8 9.2 11 VGS=4.5V, ID=20A 11 14 Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 40 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance µA 1.8 VGS=10V, ID=20A Output Capacitance Units V 10 IGSS Coss Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ mΩ mΩ S 1 V 35 A 950 1190 1430 pF VGS=0V, VDS=15V, f=1MHz 150 220 290 pF 80 130 180 pF VGS=0V, VDS=0V, f=1MHz 0.55 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 18 23 28 nC Qg(4.5V) Total Gate Charge 9 11 13 nC 2.4 3 3.6 nC 3.6 6 8.4 nC VGS=10V, VDS=15V, ID=20A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 7.8 9.8 11.7 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 14 17.6 21 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 7 ns 10 ns 22 ns 5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using