AON6500_001

AON6500 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant VDS ID (at VGS=10V) 30V 370A RDS(ON) (at VGS=10V) < 0.95mW RDS(ON) (at VGS = 4.5V) < 1.3mW Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial • See Note I DFN5X6 Top View D Top View Bottom View S S S 1 8 D 2 7 3 6 D D G 4 5 D G PIN1 S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current (Silicon) VGS TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain Current TA=25°C TA=70°C Maximum 30 Units V ±20 V 370 ID 230 IDM A 800 71 IDSM A 57 Avalanche Current C IAS 50 A Avalanche energy L=0.1mH C EAS 125 mJ VDS Spike VSPIKE 36 V 100ns TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State Steady-State Maximum Junction-to-Case Rev 2.0: March 2022 208 PD W 83 7.3 PDSM W 4.7 TJ, TSTG Symbol RqJA RqJC -55 to 150 Typ 14 40 0.46 www.aosmd.com °C Max 17 55 0.6 Units °C/W °C/W °C/W Page 1 of 6 AON6500 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V Typ 30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA RDS(ON) Static Drain-Source On-Resistance 1 TJ=55°C 5 1 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A 100 nA 2 V 0.75 0.95 1.1 1.4 1 1.3 Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=10V, VDS=15V, ID=20A 0.5 mA 1.4 gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units V VDS=30V, VGS=0V IDSS Max mW mW S 1 V 100 A 7036 pF 2778 pF 353 pF 1.1 1.7 W 107 145 nC 49.7 68 nC 11.7 nC Gate Drain Charge 21.4 nC tD(on) Turn-On DelayTime 12.3 ns tr Turn-On Rise Time 12.8 ns tD(off) Turn-Off DelayTime 68.5 ns tf Turn-Off Fall Time 28.8 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/ms 31 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ms 106 ns nC VGS=10V, VDS=15V, RL=0.75W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using 1ms turn-on/turn-off, please consult AOS FAE for proper product selection. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS. AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms_and_conditions_of_sale Rev 2.0: March 2022 www.aosmd.com Page 2 of 6 AON6500 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4.5V 80 3V 2.5V 10V 60 ID(A) 60 ID (A) VDS=5V 80 125°C 40 40 25°C 20 20 VGS=2V 0 0 0 1 2 3 4 1.0 5 2.0 2.5 3.0 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2.0 Normalized On-Resistance 1.6 1.5 RDS(ON) (mW) 1.5 VGS=4.5V 1.0 0.5 VGS=10V 0.0 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 2 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.00E+02 ID=20A 1.00E+01 1.5 1.00E+00 125°C 1.00E-01 IS (A) RDS(ON) (mW) 125°C 1 25°C 1.00E-02 1.00E-03 25°C 0.5 1.00E-04 1.00E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2.0: March 2022 www.aosmd.com 0 0.2 0.4 0.6 0.8 1 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6500 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10000 VDS=15V ID=20A 9000 Ciss 8000 Capacitance (pF) VGS (Volts) 8 6 4 2 7000 6000 5000 4000 3000 Coss 2000 1000 0 Crss 0 0 20 40 60 80 100 120 0 Qg (nC) Figure 7: Gate-Charge Characteristics 25 30 100ms 1ms 10ms 1.00 300 200 100 TJ(Max)=150°C TC=25°C 0.01 TJ(Max)=150°C TC=25°C 400 10ms 0.10 0.1 1 10 100 0 0.0001 VDS (Volts) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZqJC Normalized Transient Thermal Resistance 20 10ms Power (W) ID (Amps) RDS(ON) limited DC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC 1 15 500 10.00 0.01 10 VDS (Volts) Figure 8: Capacitance Characteristics 1,000.00 100.00 5 RqJC=0.6°C/W PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2.0: March 2022 www.aosmd.com Page 4 of 6 AON6500 250 500 200 400 Current rating I D(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 100 50 300 200 100 0 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 100000 TA=25°C Power (W) 10000 1000 100 10 1 0.0001 0.01 1 100 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10000 ZqJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=55°C/W 0.1 PD 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev 2.0: March 2022 www.aosmd.com Page 5 of 6 AON6500 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev 2.0: March 2022 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6