AONS36346

AONS36346 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 30V 60A RDS(ON) (at VGS=10V) < 5.5mΩ RDS(ON) (at VGS=4.5V) < 9.5mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial • See Note I DFN5X6 Top View D Bottom View Top View S S S 1 8 D 2 7 3 6 D D G 4 5 D G PIN1 PIN1 S Orderable Part Number Package Type Form Minimum Order Quantity AONS36346 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.01mH VDS Spike 10μs TC=25°C Power Dissipation B C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.2.0: June 2019 IAS 42 A EAS 9 mJ VSPIKE 36 V 31 Steady-State Steady-State RqJA RqJC www.aosmd.com W 12.5 6.2 W 4 TJ, TSTG Symbol t ≤ 10s A 21 PDSM TA=70°C A 26.5 PD TC=100°C V 100 IDSM TA=70°C ±20 38 IDM TA=25°C Units V 60 ID TC=100°C Maximum 30 -55 to 150 Typ 15 40 3.1 °C Max 20 50 4 Units °C/W °C/W °C/W Page 1 of 6 AONS36346 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250μA, VGS=0V Typ 30 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C 5 1.2 VGS=10V, ID=20A nA 1.65 2.1 V 4.5 5.5 6.6 8 9.5 Static Drain-Source On-Resistance VGS=4.5V, ID=20A 7.5 gFS Forward Transconductance VDS=5V, ID=20A 54 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz μA ±100 RDS(ON) TJ=125°C Units V VDS=30V, VGS=0V IDSS Max mΩ mΩ S 1 V 40 A 800 pF 240 pF 35 pF 1 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 10 20 nC Qg(4.5V) Total Gate Charge 5 10 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr f=1MHz VGS=10V, VDS=15V, ID=20A 0.5 2 nC 2 nC 5 ns 2.5 ns 17 ns 2.5 ns IF=20A, di/dt=500A/ms 10 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 13 ns nC VGS=10V, VDS=15V, RL=0.75W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using 1ms turn-on/turn-off, please consult AOS FAE for proper product selection. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: June 2019 www.aosmd.com Page 2 of 6 AONS36346 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 4.5V 3.5V VDS=5V 10V 40 40 3V 30 ID (A) ID (A) 30 20 125°C 20 25°C 10 10 VGS=2.5V 0 0 0 1 2 3 4 0 5 1 2 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 10 1.8 Normalized On-Resistance VGS=4.5V RDS(ON) (mW) 8 6 4 VGS=10V 2 1.6 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 1.0E+01 ID=20A 1.0E+00 125°C 1.0E-01 125°C 15 IS (A) RDS(ON) (mW) 20 1.0E-02 10 25°C 1.0E-03 5 1.0E-04 25°C 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0: June 2019 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AONS36346 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1000 VDS=15V ID=20A 900 Ciss 800 Capacitance (pF) VGS (Volts) 8 6 4 2 700 600 500 400 Coss 300 200 Crss 100 0 0 0 2 4 6 8 10 12 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 200 10ms RDS(ON) limited 10ms 100ms DC 1ms 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 TJ(Max)=150°C TC=25°C 160 Power (W) 100.0 ID (Amps) 10 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 10.0 5 120 80 40 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=4°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: June 2019 www.aosmd.com Page 4 of 6 AONS36346 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 70 60 Current rating ID (A) Power Dissipation (W) 30 20 10 50 40 30 20 10 0 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZqJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: June 2019 www.aosmd.com Page 5 of 6 AONS36346 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) (UIS) Test Unclamped Inductive Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: June 2019 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6