AONS66923

AONS66923 100V N-Channel AlphaSGT General Description TM Product Summary VDS • Trench Power AlphaSGT TM technology • Low RDS(ON) • Logic Level Driving • Excellent QG x RDS(ON) Product (FOM) • Spike Optimized Process • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 100V 47A RDS(ON) (at VGS=10V) < 10.8mΩ RDS(ON) (at VGS=4.5V) < 14.8mΩ 100% UIS Tested 100% Rg Tested • High Frequency Switching and Synchronous Rectification DFN5X6 Top View D Top View Bottom View PIN1 S S S 1 8 D 2 7 3 6 D D G 4 5 D G S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AONS66923 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: April 2018 IAS 30 A EAS 45 mJ 48 Steady-State Steady-State RqJA RqJC W 19 5.0 W 3.2 TJ, TSTG Symbol t ≤ 10s A 12 PDSM TA=70°C A 15 PD TA=25°C A V 105 IDSM TA=70°C ±20 30 IDM TA=25°C Continuous Drain Current Units V 47 ID TC=100°C Maximum 100 -55 to 150 Typ 20 45 2.1 www.aosmd.com °C Max 25 55 2.6 Units °C/W °C/W °C/W Page 1 of 6 AONS66923 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C VGS=10V, ID=20A ±100 nA 2.1 2.6 V 9.0 10.8 15.8 19.3 11.5 14.8 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 50 VSD Diode Forward Voltage IS=1A, VGS=0V 0.72 IS Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Qoss Output Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=50V, ID=20A VGS=0V, VDS=50V 0.3 mΩ mΩ S 1 V 47 A 1725 pF 360 pF 7.5 pF 0.8 1.3 Ω 25 35 nC 12.5 18 nC 6 nC 3.5 nC 30 8.5 nC ns 3 ns 23 ns 3.5 ns IF=20A, di/dt=500A/ms 41 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 156 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=50V, RL=2.5W, RGEN=3W μA 5 1.6 Units V VDS=100V, VGS=0V IDSS Max A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZqJC Normalized Transient Thermal Resistance 75 500 100.0 10 50 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 10.0 25 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=2.6°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: April 2018 www.aosmd.com Page 4 of 6 AONS66923 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 40 Current rating ID (A) Power Dissipation (W) 60 20 40 20 0 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 2 TA=25°C 1000 Power (W) Eoss(uJ) 1.5 100 1 10 0.5 0 0 20 40 60 80 100 1 1E-05 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note H) VDS (Volts) Figure 14: Coss stored Energy ZqJA Normalized Transient Thermal Resistance 0.001 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=55°C/W 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: April 2018 www.aosmd.com Page 5 of 6 AONS66923 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit &&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) (UIS) Test Unclamped Inductive Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: April 2018 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6