AOT12N60_001

AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 700V@150℃ 12A RDS(ON) (at VGS=10V) < 0.55Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT12N60L & AOTF12N60L TO-220 Top View G D TO-220F D G G D S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT12N60 Drain-Source Voltage VDS 600 Gate-Source Voltage ±30 Continuous Drain Current VGS TC=25°C TC=100°C AOTF12N60 V 12 ID Units V 12* 9.7* 9.7 A Pulsed Drain Current C IDM 48 Avalanche Current C IAR 5.5 A Repetitive avalanche energy C EAR 450 mJ Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS 900 50 5 mJ dv/dt PD 50 W 2.2 0.4 -55 to 150 W/ oC °C 300 °C TL Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.6.0: June 2013 278 TJ, TSTG Symbol RθJA RθCS V/ns AOT12N60 65 AOTF12N60 65 Units °C/W 0.5 0.45 -2.5 °C/W °C/W www.aosmd.com Page 1 of 6 AOT12N60/AOTF12N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.65 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A gFS Forward Transconductance VDS=40V, ID=6A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 4 4.5 nΑ V 0.46 0.55 Ω 1 V Maximum Body-Diode Continuous Current 12 A Maximum Body-Diode Pulsed Current 48 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss ±100 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr 20 S 0.72 1400 1751 2100 pF VGS=0V, VDS=25V, f=1MHz 130 164 200 pF 10 13 16 pF VGS=0V, VDS=0V, f=1MHz 2.5 3.3 5 Ω 40 50 nC 9 11 nC 17.9 22 nC 39 50 ns SWITCHING PARAMETERS Qg Total Gate Charge Qgs 3 VGS=10V, VDS=480V, ID=12A VGS=10V, VDS=300V, ID=12A, RG=25Ω 70 85 ns 122 150 ns 74 90 ns IF=12A,dI/dt=100A/µs,VDS=100V 311 373 Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V 5.2 6.2 ns µC Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using