AOT12N65

AOT12N65/AOTF12N65/AOB12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 & AOB12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 750V@150℃ 12A RDS(ON) (at VGS=10V) < 0.72Ω 100% UIS Tested 100% Rg Tested Top View TO-220 D TO-263 D2PAK TO-220F D G D S AOT12N65 G S D G S G AOTF12N65 S AOB12N65 Orderable Part Number Package Type Form Minimum Order Quantity AOT12N65 AOTF12N65 AOTF12N65L AOB12N65L TO-220 Pb Free TO-220F Pb Free TO-220F Green TO-263 Green Tube Tube Tube Tape & Reel 1000 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT(B)12N65 Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C ID AOTF12N65 650 AOTF12N65L ±30 V 12 12* 12* 7.7 7.7* 7.7* IDM Units V A 48 Avalanche Current C IAR 5 A Repetitive avalanche energy C EAR 375 mJ Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC EAS 750 30 5 50 mJ Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D dv/dt PD TJ, TSTG TL Symbol RθJA RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.7.0: December 2014 278 2.2 0.4 -55 to 150 V/ns 40 W 0.3 W/ oC °C 300 °C AOT(B)12N65 65 AOTF12N65 65 AOTF12N65L 65 Units °C/W 0.5 0.45 -2.5 -3.1 °C/W °C/W www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions Min ID=250µA, VGS=0V, TJ=25°C 650 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 12 A ISM Maximum Body-Diode Pulsed Current 48 A ID=250µA, VGS=0V, TJ=150°C 750 V ID=250µA, VGS=0V 0.72 o V/ C VDS=650V, VGS=0V 1 VDS=520V, TJ=125°C 10 3.9 4.5 nΑ V VGS=10V, ID=6A 0.57 0.72 Ω VDS=40V, ID=6A 17 1 V DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance ±100 µA 3 S 0.71 1430 1792 2150 pF VGS=0V, VDS=25V, f=1MHz 120 152 185 pF 9 11.5 18 pF VGS=0V, VDS=0V, f=1MHz 1.7 3.5 5.3 Ω 32 39.8 48 nC VGS=10V, VDS=520V, ID=12A 7.5 9.2 11 nC 13.5 16.8 20 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V 36 VGS=10V, VDS=325V, ID=12A, RG=25Ω IF=12A,dI/dt=100A/µs,VDS=100V ns 77 ns 120 ns 63 ns 300 375 450 6 7.5 9 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using