AOT20B65M1

AOK20B65M1/AOT20B65M1/AOB20B65M1 TM 650V, 20A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary • Latest Alpha IGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(sat) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness VCE IC (TC=100°C) 650V 20A VCE(sat) (TJ=25°C) 1.7V Applications • Motor Drives • Sewing Machines • Home Appliances • Fan, Pumps, Vacuum Cleaner • Other Hard Switching Applications TO-247 TO-263 D2PAK TO-220 C C AOK20B65M1 G C G E Orderable Part Number C E E G G E AOT20B65M1 Package Type AOB20B65M1 Form Minimum Order Quantity AOK20B65M1 TO247 Tube 240 TO220 Tube 1000 AOT20B65M1 AOB20B65M1 TO263 Tape & Reel 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol AOK20B65M1/AOT(B)20B65M1 Parameter Collector-Emitter Voltage V CE 650 Gate-Emitter Voltage V GE Continuous Collector TC=25°C TC=100°C Current Pulsed Collector Current, Limited by TJmax Turn off SOA, VCE≤650V, Limited by TJmax Continuous Diode Forward Current TC=25°C TC=100°C IC ±30 40 20 Units V V A I CM 60 A I LM 60 A IF 40 20 A Diode Pulsed Current, Limited by TJmax I FM 60 A Short circuit withstanding time 1) VGE=15V, VCC≤400V, TJ≤175°C t SC 5 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range PD T J , T STG 227 114 -55 to 175 Maximum lead temperature for soldering TL 300 purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol AOK20B65M1 AOT(B)20B65M1 R θ JA Maximum Junction-to-Ambient 40 65 R θ JC Maximum IGBT Junction-to-Case 0.66 Maximum Diode Junction-to-Case R θ JC 1.5 1) Allowed number of short circuits: 1s. Rev.3.0: May 2016 www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 - - V V CE(sat) VGE=15V, IC=20A Symbol VF Collector-Emitter Saturation Voltage VGE=0V, IF=20A Diode Forward Voltage V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Zero Gate Voltage Collector Current VCE=650V, VGE=0V TJ=25°C - 1.7 2.15 TJ=125°C - 2.02 - TJ=175°C - 2.2 - V TJ=25°C - 1.66 2.1 TJ=125°C - 1.67 - TJ=175°C - 1.62 - - 5.1 - V V TJ=25°C - - 10 TJ=125°C - - 500 TJ=175°C - - 5000 µA I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=20A - 14 - S - 1212 - pF - 141 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCC=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 50 - pF Qg Total Gate Charge - 46 - nC Q ge Gate to Emitter Charge - 12 - nC Q gc Gate to Collector Charge - 21 - nC - 115 - A VGE=0V, VCC=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 13 - Ω ns I C(SC) VGE=15V, VCC=520V, IC=20A VGE=15V, VCC=400V, tsc≤5us, TJ≤175°C Short circuit collector current t D(on) Turn-On DelayTime - 26 - tr Turn-On Rise Time - 25 - ns t D(off) Turn-Off Delay Time - 122 - ns tf Turn-Off Fall Time - 13 - ns E on Turn-On Energy - 0.47 - mJ E off Turn-Off Energy - 0.27 - mJ E total t rr Total Switching Energy - 0.74 - mJ Diode Reverse Recovery Time - 322 - Q rr Diode Reverse Recovery Charge TJ=25°C VGE=15V, VCC=400V, IC=20A, RG=15Ω - 0.8 - ns µC Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) - 5.2 - A t D(on) Turn-On DelayTime - 27 - ns tr Turn-On Rise Time - 24 - ns t D(off) Turn-Off Delay Time - 150 - ns tf Turn-Off Fall Time - 28 - ns E on Turn-On Energy - 0.52 - mJ E off Turn-Off Energy - 0.49 - mJ E total t rr Total Switching Energy - 1.01 - mJ Diode Reverse Recovery Time - 494 - Q rr Diode Reverse Recovery Charge - 1.6 - ns µC I rm Diode Peak Reverse Recovery Current - 7.1 - A TJ=25°C IF=20A, di/dt=200A/µs, VCC=400V I rm TJ=175°C VGE=15V, VCC=400V, IC=20A, RG=15Ω TJ=175°C IF=20A, di/dt=200A/µs, VCC=400V APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: May 2016 www.aosmd.com Page 2 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 90 75 20V 17V 20V 75 60 15V 13V 60 13V 45 11V 45 IC (A) IC (A) 17V 15V 11V 30 9V 30 9V 15 15 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 1 2 3 5 6 7 60 50 VCE=20V 50 40 -40°C 25°C 40 30 175°C IF (A) IC (A) 4 VCE (V) Figure 2: Output Characteristic (Tj=175°C) VCE (V) Figure 1: Output Characteristic (Tj=25°C) 30 20 175°C 20 25°C 10 -40°C 10 0 0 3 6 9 12 VGE (V) Figure 3: Transfer Characteristic 15 0 0.5 1 1.5 2 2.5 3 VF (V) Figure 4: Diode Characteristic 5 3 2.5 4 40A IC=40A VF (V) VCE(sat) (V) 2 3 IC=20A 20A 1.5 5A 2 1 1 IC=10A IF=1A 0.5 0 0 0 25 75 100 125 150 175 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.3.0: May 2016 50 www.aosmd.com 0 25 50 75 100 125 150 175 Temperature (°C) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=520V IC=20A Cies 12 Capacitance (pF) VGE (V) 1000 9 6 Coes 100 Cres 10 3 0 1 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 0 8 16 24 32 VCE (V) Figure 8: Capacitance Characteristic 40 25 50 175 300 Power Disspation (W) 240 180 120 60 0 75 100 125 150 TCASE (°C) Figure 10: Power Disspation as a Function of Case 1E-02 50 1E-03 1E-04 30 ICE(S) (A) Current rating IC (A) 40 20 VCE=650V 1E-05 1E-06 10 VCE=520V 1E-07 0 1E-08 25 50 75 100 125 150 175 TCASE (°C) Figure 11: Current De-rating Rev.3.0: May 2016 0 25 50 75 100 125 150 175 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature www.aosmd.com Page 4 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 100 10 100 10 1 1 10 15 20 25 30 35 IC (A) Figure 13: Switching Time vs. IC (Tj=175°C, VGE=15V, VCE=400V, Rg=15Ω) 10000 40 0 1000 30 60 90 120 Rg (Ω) Figure 14: Switching Time vs. Rg (Tj=175°C, VGE=15V, VCE=400V, IC=20A) 150 25 175 7 Td(off) Tf Td(on) Tr 6 5 VGE(TH) (V) Switching Time (ns) Td(off) Tf Td(on) Tr 1000 Switching Time (ns) 1000 Switching Time (ns) 10000 Td(off) Tf Td(on) Tr 100 4 3 10 2 1 1 25 Rev.3.0: May 2016 50 75 100 125 150 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V, VCE=400V, IC=20A, Rg=15Ω) 175 www.aosmd.com 0 50 75 100 125 150 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 3 Eoff Eoff Eon Eon 2.5 Etotal Switching Energy (mJ) SwitchIng Energy (mJ) 2.5 2 1.5 1 0.5 Etotal 2 1.5 1 0.5 0 0 10 15 20 25 30 35 40 0 1.5 60 90 120 150 1.5 Eoff Eoff Eon Eon 1.2 1.2 Etotal Switching Energy (mJ) Switching Energy (mJ) 30 Rg (Ω) Figure 18: Switching Loss vs. Rg (Tj=175°C, VGE=15V, VCE=400V, IC=20A) IC (A) Figure 17: Switching Loss vs. IC (Tj=175°C, VGE=15V, VCE=400V, Rg=15Ω) 0.9 0.6 0.3 Etotal 0.9 0.6 0.3 0 0 25 Rev.3.0: May 2016 50 75 100 125 150 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V, VCE=400V, IC=20A, Rg=15Ω) 175 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=175°C, VGE=15V, IC=20A, Rg=15Ω) 500 Page 6 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 32 480 24 360 25°C 15 240 16 0 0 0 30 35 0 10 40 IF (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 2000 175°C 1600 5 25°C Irm 25°C 25 S 120 8 20 10 175°C 500 15 20 25°C Trr 175°C 10 25 175°C 40 600 32 480 15 20 25 30 35 40 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 30 25 24 25°C Qrr 800 16 Trr (ns) 1200 Irm (A) Qrr (nC) 175°C 15 25°C 240 10 175°C 175°C Irm 400 8 120 5 25°C 25°C 0 0 200 300 S 0 500 600 700 800 di/dt (A/µs) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V, VCE=400V, IF=20A) Rev.3.0: May 2016 20 Trr 360 S Qrr 1000 30 S 175°C 600 Irm (A) Qrr (nC) 2000 40 Trr (ns) 2500 400 www.aosmd.com 0 200 300 400 500 600 700 800 di/dt (A/µs) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V, VCE=400V, IF=20A) Page 7 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.66°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT 1 10 ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PDM 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.3.0: May 2016 www.aosmd.com Page 8 of 9 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.3.0: May 2016 www.aosmd.com Page 9 of 9