AOWF11N60

AOWF11N60 600V,11A N-Channel MOSFET General Description Product Summary The AOWF11N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 700V@150℃ 11A RDS(ON) (at VGS=10V) < 0.65Ω 100% UIS Tested 100% Rg Tested TO-262F Bottom View Top View D G S G D S D G S AOWF11N60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C AOWF11N60 600 Units V ±30 V 11* ID 8* A IDM 39 Avalanche Current C IAR 4.8 A Repetitive avalanche energy C EAR 345 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS dv/dt 690 5 27.8 mJ V/ns W 0.22 -55 to 150 W/ oC °C 300 °C AOWF11N60 65 4.5 Units °C/W °C/W PD TJ, TSTG Junction and Storage Temperature Range Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev 0: Jan 2012 www.aosmd.com Page 1 of 5 AOWF11N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.67 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 ±100 3.3 µA 3.9 4.5 nΑ V 0.65 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.5A 0.56 gFS Forward Transconductance VDS=40V, ID=5.5A 12 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 11 A ISM Maximum Body-Diode Pulsed Current 39 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge S 0.73 1320 1656 1990 pF 100 146 195 pF 6.5 11.2 16 pF 1.7 3.5 5.3 Ω 24 30.6 37 VGS=10V, VDS=480V, ID=11A nC 9.6 nC Qgd Gate Drain Charge 9.6 nC tD(on) Turn-On DelayTime 39 ns tr Turn-On Rise Time 58 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=11A,dI/dt=100A/µs,VDS=100V 400 500 600 Qrr Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V 4.7 5.9 7.1 Body Diode Reverse Recovery Time VGS=10V, VDS=300V, ID=11A, RG=25Ω 92 ns 42 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using