AOWF380A60C

AOWF380A60C 600V a MOS5 TM N-Channel Power Transistor General Description Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max 700V IDM 44A RDS(ON),max < 0.38Ω Qg,typ 18nC Eoss @ 400V 2.6mJ Applications 100% UIS Tested 100% Rg Tested • SMPS with PFC, Flyback and LLC topologies • Silver ATX ,adapter, TV, lighting, Server power TO-262F Top View D Bottom View G D S S D G G S AOWF380A60C Orderable Part Number Package Type Form Minimum Order Quantity AOWF380A60C TO262F Tube 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Gate-Source Voltage (dynamic) AC( f>1Hz) TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current C Maximum 600 Units V VGS ±20 V VGS ±30 V ID 11* 7.2* A IDM 44 Avalanche Current C IAR 2.5 A Repetitive avalanche energy C EAR 3.1 mJ EAS 210 100 20 25 0.2 -55 to 150 mJ W W/°C °C 300 °C Maximum Units 65 5.0 °C/W °C/W Single pulsed avalanche energy G (TJ=25°C, VGS=10V, IL=2Apk, L=105mH, RGS=25W) MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds dv/dt PD TJ, TSTG TL Thermal Characteristics Parameter Symbol RqJA Maximum Junction-to-Ambient A,D Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev.2.0: September 2020 www.aosmd.com V/ns Page 1 of 6 AOWF380A60C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V VDS=5V, ID=250mA RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS ID=250μA, VGS=0V, TJ=150°C 700 ID=250μA, VGS=0V 0.44 V o V/ C VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 mA ±100 nA 3.2 3.8 V VGS=10V, ID=5.5A 0.33 0.38 Ω Forward Transconductance VDS=10V, ID=5.5A 9.3 VSD Diode Forward Voltage IS=5.5A,VGS=0V 0.85 IS ISM S 1.2 V Maximum Body-Diode Continuous Current 11 A Maximum Body-Diode Pulsed Current C 44 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Co(er) Effective output capacitance, energy H related Crss Effective output capacitance, time I related Reverse Transfer Capacitance Rg Gate resistance Co(tr) 2.6 955 pF 29 pF 30 pF 122 pF VGS=0V, VDS=100V, f=1MHz 2.4 pF f=1MHz 4.8 Ω 18 nC 7 nC VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=5.5A Qgs Gate Source Charge Qgd Gate Drain Charge 4.5 nC tD(on) Turn-On DelayTime 20 ns tr Turn-On Rise Time 13 ns tD(off) Turn-Off DelayTime 43 ns tf trr Turn-Off Fall Time 16 ns 251 ns Irm Peak Reverse Recovery Current 19 Qrr Body Diode Reverse Recovery Charge A mC VGS=10V, VDS=400V, ID=5.5A, RG=5W Body Diode Reverse Recovery Time IF=5.5A, dI/dt=100A/ms, VDS=400V 3.1 A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using