MRF429

MRF429 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF429 is Designed for High voltage applications up tp 30 MHz PACKAGE STYLE .500 4L FLG .112x45° L A FULL R FEATURES: • PG = 13 dB min. at 150 W/30 MHz • IMD3 = -32 dBc max. at 150 W(PEP) • Omnigold™ Metalization System C B E C Ø.125 NOM. B D G F E E H MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 16 A 100 V 50 V 4.0 V 233 W @ TC = 25 °C -65°C to +200 °C -65 °C to +150 °C 0.75 °C/W O IJ K DIM A B C D E F G H I J K L M INIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO hFE Cob GP IMD ηC TC = 25 C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 200 mA IE = 10 mA VCE = 5.0 V VCB = 50 V IC = 5.0 A f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 100 100 50 4.0 10 220 13 15 -35 45 -32 80 300 UNITS V V V V --pF dB dBc % VCE = 50 V ICQ = 3.3 A POUT = 150 W (PEP) f = 30 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1