MRF429

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF429/D The RF Line NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 13 dB Efficiency = 45% • Intermodulation Distortion @ 150 W (PEP) — IMD = –32 dB (Max) • Diffused Emitter Resistors for Superior Ruggedness • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR @ 150 W CW MRF429 150 W (LINEAR), 30 MHz RF POWER TRANSISTOR NPN SILICON CASE 211–11, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Withstand Current — 10 s Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC — PD Tstg Value 50 100 4.0 16 20 233 1.33 –65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.75 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO 50 100 100 4.0 — — — — — — — — Vdc Vdc Vdc Vdc (continued) 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 10 30 80 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 50 Vdc, IE = 0, f = 1.0 MHz) Cob — 220 300 pF FUNCTIONAL TESTS Common–Emitter Amplifier Gain (VCC = 50 Vdc, Pout = 150 W (PEP), IC(max) = 3.32 Adc, f = 30; 30.001 MHz) Output Power (VCE = 50 Vdc, f = 30; 30.001 MHz) Collector Efficiency (VCC = 50 Vdc, Pout = 150 W (PEP), IC(max) = 3.32 Adc, f = 30, 30.001 MHz) Intermodulation Distortion (1) (VCE = 50 Vdc, Pout = 150 W (PEP), IC = 3.32 Adc) Electrical Ruggedness (VCC = 50 Vdc, Pout = 150 W CW, f = 30 MHz, VSWR 30:1 at all Phase Angles) GPE 13 15 — dB Pout η 150 45 — — — — W (PEP) % IMD ψ — –35 –32 dB No Degradation in Output Power NOTE: 1. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone. + BIAS - R1 + CR1 L2 DUT L3 L4 L5 + C3 C4 C8 C9 C10 50 Vdc RF OUTPUT RF INPUT C2 L1 R3 C6 C5 C7 C1 R2 C1, C2, C7 — 170–780 pF, Arco 469 C3, C8, C9 — 0.1 µF, 100 V Erie C4 — 500 µF @ 6.0 V C5 — 9.0–180 pF, Arco 463 C6 — 80–480 pF, Arco 466 C10 — 30 µF, 100 V R1 — 10 Ω, 10 Watt R2 — 10 Ω, 1.0 Watt R3 — 5.0 – 3.3 Ω 1/2 Watt Carbon Resistors in Parallel CR1 — 1N4997 L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long L2 — 10 µH Molded Choke L3 — 12 Turns, #16 Enameled Wire Closewound, 1/4″ I.D. L4 — 5 Turns, 1/8″ Copper Tubing, 9/16″ I.D., 3/4″ Long L5 — 10 Ferrite Beads — Ferroxcube #56–590–65/3B Figure 1. 30 MHz Test Circuit Schematic 2 250 200 150 100 50 0 VCC = 50 V 40 V 28 V Pout , OUTPUT POWER (WATTS PEP) Pout , OUTPUT POWER (WATTS CW) f = 30 MHz ICQ = 150 mA 250 200 150 100 50 0 -35 dB f = 30, 30.001 MHz ICQ = 150 mA IMD = d3 IMD = -30 dB 0 2 4 6 Pin, INPUT POWER (WATTS) 8 10 20 30 40 50 VCC, SUPPLY VOLTAGE (VOLTS) 60 Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage 30 25 20 15 10 0 Pout , (WATTS CW) 350 300 250 200 150 100 100°C 1 3 5 10 30 50 OUTPUT VSWR f = 30.000 MHz ICQ = 150 mA VCC = 50 V G PE , POWER GAIN (dB) VCC = 50 V ICQ = 150 mA Pout = 150 W TC = 50°C 1 2 4 7 15 f, FREQUENCY (MHz) 30 60 100 Figure 4. Power Gain versus Frequency Figure 5. RF Safe Operating Area (SOAR) VCC = 30 V 200 150 100 50 0 15 V IMD, INTERMODULATION DISTORTION (dB) 250 -25 -30 -35 -40 -45 -50 d5 d3 VCC = 50 V f = 30, 30.001 MHz f T (MHz) 0 10 5 IC, COLLECTOR CURRENT (AMPS) 14 0 20 40 60 80 100 120 Pout, OUTPUT POWER (WATTS PEP) 140 160 Figure 6. fT versus Collector Current Figure 7. IMD versus Pout 3 5000 Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF) Rout , PARALLEL EQUIVALENT OUTPUT RESISTANCE (OHMS) 4000 3000 2000 1000 0 VCC = 50 V ICQ = 150 mA Pout = 150 W PEP 20 16 12 8 4 0 VCC = 50 V ICQ = 150 mA Pout = 150 W PEP 1 2 4 7 15 f, FREQUENCY (MHz) 30 60 100 1 2 4 7 15 f, FREQUENCY (MHz) 30 60 100 Figure 8. Output Capacitance versus Frequency Figure 9. Output Resistance versus Frequency 90 60 30 15 VCC = 50 V ICQ = 150 mA Pout = 150 W PEP f MHz 2.0 4.0 7.0 15 30 60 90 Zin Ohms 7.15 - j2.40 4.20 - j2.25 2.55 - j1.75 1.60 - j1.15 1.10 - j0.70 0.78 - j0.30 0.67 - j0.10 7.0 4.0 f = 2.0 MHz Z o = 10 Ω Figure 10. Series Equivalent Impedance 4 PACKAGE DIMENSIONS A U M 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Q M 4 R B 2 3 D K J H C E SEATING PLANE DIM A B C D E H J K M Q R U STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 --45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 --45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 EMITTER BASE EMITTER COLLECTOR CASE 211–11 ISSUE N Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 5