SPI5842

Semiconductor SPI5842 Photo Diode Features • Peak sensitivity wavelength matching with infrared LED(λP=950nm) • 4.8mm × 5.5mm side view package • Black colored visible light cut-off lens Application • Infrared remote controllers for TVs, VCRs, Audio equipment etc Outline Dimensions 4.8±0.2 3.65±0.2 1.75 unit : mm 5.55±0.2 5.6±0.2 0.6 18.0±1.0 Typ.0.5 2.54 ① ② PIN Connections 1. Anode 2.Cathode KPE-0001-000 1 SPI5842 Absolute maximum ratings Characteristic Reverse Voltage Power Dissipation Operating Temperature Storage Temperature * Soldering Temperature 1 Symbol VR PD Topr Tstg Tsol Ratings 40 170 -20～70 -25～85 260℃ for 5 seconds Unit V mW ℃ ℃ *1.Keep the distance more than 2.0mm from PCB to the bottom of Photo Diode package Electrical Characteristics Characteristic * Short Circuit Current Dark Current Capacitance Spectral Sensitivity Peak Sensitivity Wavelength Half angle 1 Symbol ISC ID Ct Δλ λP θ /2 1 Test Condition Ee=6mW/㎠ VR=10V VR=10V, f=1MHz - Min. - Typ. 40 10 Max. 50 - Unit uA nA pF nm 840 ~ 1,050 940 ±55 - nm deg *1. Ee : Irradiance by infrared LED light source(λp=940nm) KPE-0001-000 2 Characteristic Diagrams Fig. 1 ISC - Ee Fig. 2 ID - Ta SPI5842 Short Current ISC [uA] Light Source [mW/㎠] Dark Current ID [nA] Ambient Temperature Ta [℃] Fig. 3 Ct – VR Fig.4 ID – VR Reverse Voltage [v] Dark Current ID [nA] Capacitance [Pf] Reverse Voltage [v] Fig.5 Spectrum Sensitivity Fig. 5-1 Radiation Diagram Relative Intensity [%] Wavelength λ [nm] Relative Luminous Intensity Iv [%] KPE-0001-000 3