DMN1006UCA6-7

DMN1006UCA6 6 MOSFET N-CHANNEL ENHANCEMENT MODE Product Summary Features BVSSS RSS(ON) Typ IS Max TA = +25°C 12V 5.3mΩ @ VGS = 3.8V 16.6A       Description CSP with Footprint 2.70mm × 1.81mm Height = 0.21mm for Low Profile ESD Protection of Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  Battery Management Mechanical Data  Load Switch  Case: X3-DSN2718-6  Battery Protection  Terminal Connections: See Diagram Below   Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — NiPdAu. Solderable per MIL-STD-202, Method 208 e4  Weight: 0.0026 grams (Approximate) X3-DSN2718-6 G1 G2 ESD PROTECTED S1 S2 Equivalent Circuit Top View Ordering Information (Note 4) Part Number DMN1006UCA6-7 Notes: Case X3-DSN2718-6 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain