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RU4M

RU4M

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    RU4M - HIGH EFFICIENCY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
RU4M 数据手册
BL F EATURES G ALAXY ELECTRICAL RU4M(Z) --- RU4AM(Z) VOLTAGE RANGE: 400 --- 600 V CURRENT: 3.5 A HIGH EFFICIENCY RECT IFIER L ow cos t D iffus ed junction L ow leakage L ow forward voltage drop H igh current capability E as ily cleaned with freon, alcohol, ls opropand and s im ilar s olvents The plas tic m aterial carries U/L recognition 94V-0 DO - 27 MECHANICAL DATA C as e: JEDEC DO-27, m olded plas tic Term inals : Axial leads ,s olderable per MIL-STD-202,Method 208 P olarity: Color band denotes cathode Weight: 0.041ounces ,1.15 gram s Mounting: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 a m bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. RU4M Maximum peak repetitive reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average f orw ard rectif ied current 9.5mm lead length, Peak f orw ard surge current 10ms single half -sine-w ave superimplsed on rated load @TJ =125 Maximum instantaneous f orw ard voltage @ 3.5A Maximum reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance Typical thermal resistance Operating junction temperature range Storage temperature range NOTE: 1. Measured with I F =0.5A, I R=1A, Irr=0.25A. 2. Measured at 1.0MH Z a nd applied rev erse v oltage of 4.0V DC. 3. Thermal resistance junction to am bient. RU4AM 600 420 600 3.5 UNITS V V V A V RRM V RMS V DC IF(AV) 400 280 400 @TA =75 IFSM VF IR t rr CJ Rθ JL TJ TSTG 70 70.0 A 1.3 10.0 V A @TA =25 @TA =100 (Note1) (Note2) (Note3) 300.0 100 50 8 - 5 5 ----- + 150 - 55 ----- + 150 www.galaxycn.com ns pF /W Document Number 0262047 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES RU4M(Z)---RU4AM(Z) FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. t rr +0.5A D.U.T. (+) 25VDC (approx) (-) 1 NONINDUCTIVE PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE1) 0 -0 .2 5 A -1 .0 A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 10/20 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT 100 10 FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT AMPERES 3.5 3.0 TJ=25 Pulse Width=300µS 1.0 AMPERES 2.0 Single Phase Half Wave 60Hz Resistive or Inductive Load 1.0 0.1 0.04 0.01 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD VOLTAGE, VOLTS AMBIENT TEMPERATURE, FIG.4 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES 70 FIG.5-- TYPICAL JUNCTION CAPACITANCE 200 60 50 TJ=25 8.3ms Single Half Sine-Wave JUNCTION CAPACITANCE,pF 40 30 RU4M 100 70 50 20 10 01      TJ=25 20 10 0.1 0.2 0.4 1 2 RU4AM 5 10 50 4 10 20 40 100 NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0262047 BLGALAXY ELECTRICAL 2.

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