2N6491

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 2N6486, 2N6487, 2N6488 2N6489, 2N6490, 2N6491 2N6486, 6487, 6488 2N6489, 6490, 6491 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 Boca Semiconductor Corp. BSC B H F C E 1 2 3 DIM A B C D E F G H J K L M N O MIN . 14.42 9.63 3.56 MAX. N L O 12 3 D G J M 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DEG 7 A O ABSOLUTE MAXIMUM RATINGS 6486 6487 6488 6489 6490 6491 max. 50 70 90 max. 40 60 80 max. 15 max. 75 max. 150 max. min. max. 1.3 20 150 All dimin sions in mm. K Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 5 A; IB = 0.5 A D.C. current gain IC = 5 A; VCE = 4 V VCBO VCEO IC Ptot Tj VCEsat hFE V V A W °C V RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO 6486 6487 6488 6489 6490 6491 max. 50 70 90 max. 40 60 80 max. 5.0 V V V http://www.bocasemi.com Continental Device India Limited Data Sheet page: 1 Page 1 of 3 2N6486, 2N6487, 2N6488 2N6489, 2N6490, 2N6491 Collector current Base current Total power dissipation up to TC = 25°C Derate above 25°C Total power dissipation up to TA = 25°C Derate above 25°C Junction temperature Storage temperature THERMAL RESISTANCE From junction to ambient From junction to case CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IB = 0; VCE = 20 V IB = 0; VCE = 30 V IB = 0; VCE = 40 V VEB(off) = 1.5 V; VCE = 45 V VEB(off) = 1.5 V; VCE = 65 V VEB(off) = 1.5 V; VCE = 85 V VEB(off) = 1.5 V; VCE = 40 V; VEB(off) = 1.5 V; VCE = 60 V; VEB(off) = 1.5 V; VCE = 80 V; Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 200 mA; IB = 0 IC = 1 mA; IE = 0 IC = 200 mA; VBE = 1.5 V IE = 1 mA; IC = 0 Saturation voltages IC = 5 A; IB = 0.5 A IC = 15 A; IB = 5 A Base-emitter on voltage IC = 5 A; VCE = 4 V IC = 15 A; VCE = 4 V D.C. current gain IC = 5 A; VCE = 4 V IC IB P tot P tot Tj T stg R th j–a R th j–c max. max. max. max. max. max. max. 15 5.0 75 0.6 1.8 0.014 150 –65 to +150 70 1.67 A A W W °C / W W °C / °C °C °C W / °C W / 6486 6487 6488 6489 6490 6491 max. 1.0 max. – max. – max. 500 max. – max. – max. 5.0 max. – max. – max. min. 40 min. 50 min. 50 min. max. max. max. max. min. max. min. min. min. – 1.0 – – 500 – – 5.0 – 1.0 60 70 70 5.0 1.3 3.5 1.3 3.5 20 150 5.0 5.0 25 MHz 80 90 90 – – 1.0 – – 500 – – 5.0 mA mA mA µA µA µA mA mA mA mA V V V V V V V V ICEO ICEO ICEO ICEX ICEX ICEX TC=150°C ICEX TC=150°C ICEX TC=150°C ICEX IEBO VCEO(sus)* VCBO VCEX(sus)* VEBO VCEsat* VCEsat* VBE(on)* VBE(on)* hFE* hFE* fT(1) hfe IC = 15 A; VCE = 4 V Transition frequency IC = 1 A; VCE = 4 V; f = 1 MHz Small signal current gain IC = 1.0A; VCE = 4V; f = 1.0 KHz * Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2% (1) fT = |hfe|• ftest http://www.bocasemi.com page: 2 Continental Device India Limited Data Sheet Page 2 of 3