2N6491

2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • • • • 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80 VOLTS, 75 WATTS High DC Current Gain High Current Gain − Bandwidth Product TO−220 Compact Package These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage 2N6487, 2N6490 2N6488, 2N6491 Symbol Value VCEO Vdc 60 80 VCB Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous IC 15 Adc Base Current IB 5.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 75 0.6 W W/°C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 70 90 TJ, Tstg PNP NPN COLLECTOR 2, 4 COLLECTOR 2, 4 1 BASE 1 BASE Unit Collector−Base Voltage 2N6487, 2N6490 2N6488, 2N6491 Operating and Storage Junction Temperature Range www.onsemi.com 1.8 0.014 W W/°C −65 to +150 °C EMITTER 3 EMITTER 3 4 TO−220 CASE 221A STYLE 1 1 2 3 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2N64xxG AYWW THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.67 _C/W Thermal Resistance, Junction−to−Ambient RqJA 70 _C/W 2N64xx xx G A Y WW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 16 1 = Specific Device Code = See Table on Page 5 = Pb−Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: 2N6487/D 2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) (IC = 200 mAdc, IB = 0) 2N6487, 2N6490 2N6488, 2N6491 VCEO(sus) Collector−Emitter Sustaining Voltage (Note 3) (IC = 200 mAdc, VBE = 1.5 Vdc) 2N6487, 2N6490 2N6488, 2N6491 VCEX Collector Cutoff Current (VCE = 30 Vdc, IB = 0) 2N6487, 2N6490 (VCE = 40 Vdc, IB = 0) 2N6488, 2N6491 ICEO Collector Cutoff Current (VCE = 65 Vdc, VEB(off) = 1.5 Vdc) 2N6487, 2N6490 (VCE = 85 Vdc, VEB(off) = 1.5 Vdc) 2N6488, 2N6491 (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6487, 2N6490 (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6488, 2N6491 ICEX Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc 60 80 − − Vdc 70 90 − − mAdc − 1.0 − 1.0 mAdc − 500 − 500 − 5.0 − 5.0 − 1.0 20 5.0 150 − − − 1.3 3.5 − − 1.3 3.5 5.0 − 25 − mAdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 15 Adc, VCE = 4.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.5 Adc) (IC = 15 Adc, IB = 5.0 Adc) VCE(sat) Base−Emitter On Voltage (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 15 Adc, VCE = 4.0 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 4) (IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz) fT Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe MHz − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 4. fT = |hfe| • ftest http://onsemi.com 2 PD, POWER DISSIPATION (WATTS) 2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) TA 4.0 TC 80 3.0 60 TC 2.0 40 TA 1.0 20 0 0 0 20 40 80 60 100 120 140 160 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating VCC + 30 V 25 ms 1000 500 RC + 10 V tr SCOPE 200 - 10 V 51 tr, tf v 10 ns DUTY CYCLE = 1.0% t, TIME (ns) RB 0 D1 100 RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. FOR PNP, REVERSE ALL POLARITIES. TC = 25°C VCC = 30 V IC/IB = 10 20 D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA 10 0.2 0.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Time Test Circuit 1.0 0.7 0.5 0.3 td @ VBE(off) [ 5.0 V NPN PNP 50 -4V 1.0 5.0 2.0 IC, COLLECTOR CURRENT (AMP) 10 20 Figure 3. Turn−On Time D = 0.5 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) ZqJC (t) = r(t) RqJC RqJC = 1.67°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) Figure 4. Thermal Response http://onsemi.com 3 20 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k 2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) IC, COLLECTOR CURRENT (AMP) 20 10 100 ms 5.0 500 ms 1.0 ms 2.0 TJ = 150°C 1.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C 0.5 CURVES APPLY BELOW RATED VCEO 2N6487, 2N6490 2N6488, 2N6491 0.2 0.1 There are two limitations on the power handling ability of a transistors average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 2.0 5.0 ms dc 40 60 4.0 10 20 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active−Region Safe Operating Area 5000 1000 700 C, CAPACITANCE (pF) ts t, TIME (ns) 1000 500 tf NPN PNP 200 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 100 50 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) Cob 300 Cib 200 Cob 100 NPN PNP TJ = 25°C 70 10 50 20 0.5 1.0 Figure 6. Turn−Off Time Figure 7. Capacitances NPN 2N6487, 2N6488 PNP 2N6490, 2N6491 500 50 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 500 TJ = 150°C 100 -55°C 50 20 VCE = 2.0 V 10 5.0 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) TJ = 150°C 200 25°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 200 25°C 100 -55°C 50 20 10 10 5.0 20 VCE = 2.0 V 0.2 Figure 8. DC Current Gain http://onsemi.com 4 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) 2.0 TJ = 25°C 1.8 1.6 1.4 1.2 1.0 IC = 1.0 A 0.8 4.0 A 8.0 A 0.6 0.4 0.2 0 5.0 10 20 50 100 200 500 1000 IB, BASE CURRENT (mA) 2000 5000 2.0 TJ = 25°C 1.8 1.6 1.4 1.2 IC = 1.0 A 1.0 4.0 A 8.0 A 0.8 0.6 0.4 0.2 0 5.0 20 10 50 100 200 500 1000 IB, BASE CURRENT (mA) 2000 5000 Figure 9. Collector Saturation Region 2.8 2.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.0 1.6 1.2 VBE(sat) = IC/IB = 10 0.8 2.0 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 2.0 V 0.4 TJ = 25°C 2.4 TJ = 25°C 2.4 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 2.0 5.0 10 0.2 20 0.5 IC, COLLECTOR CURRENT (AMP) 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages ORDERING INFORMATION Device Device Marking Package Shipping 2N6487G 2N6487 TO−220 (Pb−Free) 50 Units / Rail 2N6488G 2N6488 TO−220 (Pb−Free) 50 Units / Rail 2N6490G 2N6490 TO−220 (Pb−Free) 50 Units / Rail 2N6491G 2N6491 TO−220 (Pb−Free) 50 Units / Rail http://onsemi.com 5 20 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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