TISP4030L1BJR-S

TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP40xxL1AJ/BJ VLV Overvoltage Protectors Low Capacitance ‘4015.................................................. 28 pF ‘4030.................................................. 27 pF ‘4040.................................................. 23 pF Digital Line Signal Level Protection - ISDN - xDSL SMA Package (Top View) Additional Information Click these links for more information: R (B) 1 2 T (A) MDXXCCE PRODUCT TECHNICAL INVENTORY SAMPLES SELECTOR LIBRARY CONTACT Safety Extra Low Voltage, SELV, values VDRM V(BO) V V ‘4015 ±8 ± 15 ‘4030 ± 15 ± 30 ‘4040 ± 25 ± 40 Device SMB Package (Top View) Agency Recognition Description R(B) 1 2 T(A) UL File Number: E215609 ..............UL Recognized Component MDXXBGF 30 A “L” Series specified for: Description - ITU-T recommendations K.20, K.45, K.21 - FCC Part 68 and GR-1089-CORE Device Symbol T Wave Shape Standard ITSP A 2/10 μs GR-1089-CORE 150 8/20 μs IEC 61000-4-5 120 10/160 μs FCC Part 68 65 R 10/700 μs ITU-T K.20/45/21 FCC Part 68 45 T erminals T and R correspond to the alternative line designators of A and B 10/560 μs FCC Part 68 35 10/1000 μs GR-1089-CORE 30 SD4XAA Available in SMA and SMB Packages SMA Saves 25 % Placement Area Over SMB How to Order Device TISP40xxL1 Package Order As Carrier SMA/ DO-214AC J- Bend (AJ) Embo ssed Tape Reeled (R) SMB / DO-214AA J- Bend (BJ) TISP40xxL1AJR-S These devices are designed to limit overvoltages on digital telecommunication lines. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of transformer windings and low voltage electronics. The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state condition. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The device switches off when the diverted current falls below the holding current value. TISP40xxL1BJR-S Insert xx value cor respond ing to p rotection volt ages of 15 V, 30 V and 40 V. Asia-Pacific: Tel: +886-2 2562-4117 • Email: asiacus@bourns.com EMEA: Tel: +36 88 885 877 • Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 • Email: americus@bourns.com www.bourns.com AUGUST 1999 – REVISED JULY 2019 WARNING Cancer and Reproductive Harm www.P65Warnings.ca.gov *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP40xxL1AJ/BJ VLV Overvoltage Protectors Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating ‘4015 ‘4030 ‘4040 Repetitive peak off-state voltage Non-repetitive peak on-state pulse current (see Notes Unit VDRM ±8 ±15 V ±150 current) ± 65 ± 45 ± 45 ± 35 ± 30 ITSP A and 2) 20 ms (50 Hz) full sine wave 16 ms (60 Hz) full sine wave 2 s 50 Hz a 2 s 50 Hz Hz 1000 s 50 Hz Initial rate of rise of current (2 Value and 2) μs voltage wave shape) 2/10 μs (Telcordia GR-1089-CORE, 8/ μs (IEC comb ination wave generator, voltage, 10 μs (FCC Part 68, 160 μs voltage wave shape) 310 μs (ITU-T K 10 μs voltage wave shape) μs (FCC Part 68, μs voltage wave shape) 10 μs (FCC Part 68, 560 μs voltage wave shape) 10 μs (Telcordia GR RE, μs voltage wave shape) Non-repetitive peak on-state current (see Notes Symbol 22 13 5 ITSM di/d t 130 A/μs Maximum junction temperature TJM 150 °C Storage temperature range Tstg to +150 °C NOTES: waveshape) A Initially, the device must be in thermal equilibrium with TJ = 25 °C The surge may be repeated after the device returns to its initial conditi Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter Test Conditions Min Typ Max Unit ±5 μA IDRM Repetitive peak offstate current VD = VDRM V(BO) Breakover voltage di/dt = ±0.8 A/ms ‘4015 ‘4030 ‘4040 ±15 ±30 ±40 V V(BO) Impulse breakover voltage dv/dt = ±1000 V/μs, Linear voltage ramp, Maximum ramp value = ±500 V di/dt = ±5 A/μs, Linear current ramp, Maximum ramp value = ±10 A ‘4015 ‘4030 ‘4040 ±34 ±50 ±63 V I(BO) Breakover current di/dt = ±0.8 A/ms ±0.8 A ID Off- state current VD = ± 6 V VD = ± 13 V VD = ± 22 V ±2 μA IH Holding current IT = ±5 A, di/dt = +/-30 mA/ms ‘4015 ‘4030 ‘4040 ±50 mA AUGUST 1999 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP40xxL1AJ/BJ VLV Overvoltage Protectors Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter Test Conditions f = 1 MHz, Vd = 1 V rms, VD = 0 f = 1 MHz, Vd = 1 V rms, VD = 1 V Coff Off-state capacitance f = 1 MHz, Vd = 1 V rms, VD = 2 V Min ‘4015 ‘4030 ‘4040 ‘4015 ‘4030 ‘4040 ‘4015 ‘4030 ‘4040 Typ Max Unit 28 27 23 25 24 20 23 22 18 36 35 29 33 31 26 30 29 24 pF Typ Max Unit Thermal Characteristics Parameter RθJA Junctio n to free air thermal resistance Min Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000) , TA = 25 °C, (see Note 3) 125 120 SMA SMB 265 mm x 210 mm populated line card, SMA 4-layer PCB, IT = ITSM(1000), TA = 25 °C SMB 60 55 °C/W NOTE 3: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. AUGUST 1999 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP40xxL1AJ/BJ VLV Overvoltage Protectors Parameter Measurement Information +i Quadrant I ITSP Switching Characteristic ITSM V(BO) I(BO) IH IDRM V DRM -v VD ID ID IDRM VD V DRM +v IH I(BO) V(BO) ITSM I Quadrant III ITSP Switching Characteristic -i PM4AC Figure 1. Voltage-Current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal AUGUST 1999 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP40xxL1AJ/BJ VLV Overvoltage Protectors Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE 1.10 TC4LVC 10000 NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4LVE Normalized Breakover Voltage '4040L1 ID – Off-State Current - nA 1000 100 10 '4030L1 '4040L1 1 1.05 '4030L1 '4015L1 1.00 '4015L1 0.1 0 50 100 TA – Ambient Temperature – °C 0.95 150 -25 Figure 2. TC4LVB 2.0 30 20 NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4LVD 1.5 Normalized Holding Current IT – On-State Current – A 150 Figure 3. ON-STATE CURRENT vs ON-STATE VOLTAGE 70 50 0 25 50 75 100 125 TJ - Junction Temperature - °C 10 7 5 3 2 1 0.7 0.5 0.3 0.2 1.0 0.9 0.8 0.7 0.6 0.5 0.1 1 2 3 4 VT – On-State Voltage – V Figure 4. 5 6 0.4 -25 0 25 50 75 100 TJ - Junction Temperature - °C 125 150 Figure 5. AUGUST 1999 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP40xxL1AJ/BJ VLV Overvoltage Protectors Typical Characteristics CAPACITANCE vs OFF-STATE VOLTAGE TC4L1AA 30 Coff – Capacitance – pF TJ = 25 °C Vd = 1 V '4015 20 '4030 15 '4040 10 0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 5 10 20 30 VD - Off-state Voltage - V Figure 6. AUGUST 1999 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP40xxL1AJ/BJ VLV Overvoltage Protectors Rating and Thermal Information ITSM(t) - Non-Repetitive Peak On-State Current - A NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION TI4MAI 30 VGEN = 600 Vrms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 °C 20 15 10 9 8 7 6 5 4 3 2 1.5 0.01 0.1 1 10 100 1000 t - Current Duration - s Figure 7. VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE TI4LVA 1.00 '4015L1 Derating Factor 0.99 0.98 '4030L1 '4040L1 0.97 0.96 0.95 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 TAMIN - Minimum Ambient Temperature - °C AUGUST 1999 – REVISED JULY 2019 Figure 8. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP40xxL1AJ/BJ VLV Overvoltage Protectors APPLICATIONS INFORMATION Transformer Protection The inductance of a transformer winding reduces considerably when the magnetic core material saturates. Saturation occurs when the magnetizing current through the winding inductance exceeds a certain value. It should be noted that this is a different current to the transformed current component from primary to secondary. The standard inductance-current relationship is: (( di E = – L ----dt where: L = unsaturated inductance value in H di = current change in A dt = time period in s for current change di E = winding voltage in V Rearranging this equation and working large Δ changes to saturation gives the useful circuit relationship of: E x ∆t = L x ∆i A transformer winding volt-second value for saturation gives the designer an idea of circuit operation under overvoltage conditions. The volt-second value is not normally quoted, but most manufacturers should provide it on request. A 50 Vμs winding will support rectangular voltage pulses of 50 V for 1 μs, 25 V for 2 μs, 1 V for 50 μs and so on. Once the transformer saturates, primary to secondary coupling will be lost and the winding resistance, RW, shunts the overvoltage protector, Th1 - see Figure 9. This saturated condition is a concern for long duration impulses and a.c. fault conditions because the current capability of the winding wire may be exceeded. For example, if the on-state voltage of the protector is 1 V and the winding resistance is 0.2 Ω, the winding would bypass a current of 1/0.2 = 5 A, even though the protector was in the low voltage condition. T1 UNSATURATED Th1 T1 L Th1 RW SATURATED AI4XAO Figure 9. Transformer Saturation Figure 10 shows a generic protection arrangement. Resistors R1 and R2, together with the overcurrent protection, prevent excessive winding current flow under a.c. conditions. Normally these resistors would only be needed for special cases, e.g. some T1/E1 designs. Alternatively, a split winding could be used with a single resistor connecting the windings. This resistor could be by-passed by a small capacitor to reduce signal attenuation. OVERCURRENT PROTECT ION LINE AI4XAN R1 Th1 T1 R2 SIGNAL Figure 10. Transformer Winding Protection Overcurrent protection upstream from the overvoltage protector can be fuse, PTC or thick film resistor based. For very high frequency circuits, fuse inductance due to spiral wound elements may need to be evaluated. TISP® Device Voltage Selection Normally, the working voltage value of the protector, VDRM, would be chosen to be just greater than the peak signal amplitude over the equipment temperature range. This would give the lowest possible protection voltage, V(BO). This would minimize the peak voltage applied to the transformer winding and increase the time to core saturation. In high frequency circuits, there are two further considerations. Low voltage protectors have a higher capacitance than high voltage protectors. AUGUST 1999 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP40xxL1AJ/BJ VLV Overvoltage Protectors TISP® Device Voltage Selection (Continued) So a higher voltage protector might be chosen specifically to reduce the protector capacitive effects on the signal. Low energy short duration spikes will be clipped by the protector. This will extend the spike duration and the data loss time. A higher protector voltage will reduce the data loss time. Generally, this will not be a significant factor for inter-conductor protection. However, clipping is significant for protection to ground, where there is continuous low-level a.c. common mode induction. In some cases the induced a.c. voltage can be over 10 V. Repetitive clipping at the induced a.c. peaks by the protector would cause severe data corruption. The expected a.c. voltage induced should be added to the maximum signal level for setting the protector VDRM value. 2-Wire Digital Systems Typical systems using a single twisted pair connection are: Integrated Services Digital Network (ISDN) and Pair Gain. Signal level protection at the transformer winding is given by protectors Th3 and Th5. Typically these could be TISP4015L1 type devices with a 15 V voltage protection level. LINE SIGNAL T1 T2 SIGNAL Th1 OVERCURRENT PROTECTION C1 Th3 OVERCURRENT PROTECTION Th4 C2 Th5 Th2 DC FEED TRANSFORMER COUPLED TWO-WIRE INTERFACE DC SUPPLY AI4XAL Figure 11. 2-Wire System Two line protection circuits are given; one referenced to ground using Th1 and Th2 (left) and the other inter-wire using protector Th4 (right) - see Figure 11. For ISDN circuits compliant to ETSI ETR 080:1993, ranges 1 and 2 can be protected by the following device types: TISP4095M3, TISP4095H3, TISP3095H3 (combines Th1 and Th2) and TISP7095H3 (combines Th1, Th2 and Th4). Ranges 4 through 5 can be protected by: TISP4145M3, TISP4145H3, TISP3145H3 (combines Th1 and Th2) and TISP7145H3 (combines Th1, Th2 and Th4). Device surge requirement, H or M, will be set by the overcurrent protection components and the standards complied with. Protection of just the d.c. feed to ETSI ranges is covered in the TISP5xxxH3 data sheet. When loop test voltages exceed the normal d.c. feed levels, higher voltage protectors need to be selected. For two terminal protectors, for levels up to 190 V (135 V rms) the TISP4250, H3 or M3, can be used and for 210 V (150 V rms) the TISP4290, H3 or M3, can be used. In Pair Gain systems, the protector VDRM is normally set by the d.c. feed value. The following series of devices have a 160 V working voltage at 25 °C: TISP4220M3, TISP4220H3, TISP3210H3 (combines Th1 and Th2) and TISP7210H3 (combines Th1, Th2 and Th4). These devices can be used on 150 V d.c. feed voltages down to an ambient temperature of -25 °C. Where the subscriber equipment may be exposed to POTS (Plain Old Telephone Service) voltage levels, protector Th4 needs a higher working voltage of about 275 V. Suitable device types are: TISP4350M3, TISP4350H3, TISP3350H3 (combines Th1 and Th2) and TISP7350H3 (combines Th1, Th2 and Th4). The overcurrent protection for the overvoltage protector can be fuse, PTC or thick film resistor based. Its a.c. limiting capability should be less than the ratings of the intended overvoltage protector. Equipment complying with the year 2000 international K.20, K.21 and K.45 recommendations from the ITU-T, may be required to demonstrate protection coordination with the intended primary protector. Without adding series resistance, a simple series fuse overcurrent protection is likely to fail the equipment for this part of the recommendation. If the d.c. feed consists of equal magnitude positive and negative voltage supplies, appropriately connected TISP5xxxH3 unidirectional protectors could replace Th1 and Th2. 4-Wire Digital Systems A typical system using a two twisted pair connection is the High-bit-rate Digital Subscriber Line (HDSL) and the “S” interface of ISDN. Figure 12 shows a generic two line system. HDSL tends to have ground referenced protection at both ends of the lines (Th1, Th2, Th3 and Th4). The ISDN “S” interface is often inside the premises and simple inter-wire protection is used at the terminating adaptor (Th7 and Th8). In all cases, signal protection, Th5, Th6, Th9 and Th10, can be TISP4015L1 type devices with a 15 V voltage protection level. AUGUST 1999 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP40xxL1AJ/BJ VLV Overvoltage Protectors 4-Wire Digital Systems (Continued) SIGNAL LINE 1 T1 T3 Th1 Th5 Th2 OVERCURRENT PROTECTION OVERCURRENT PROTECTION SIGNAL Th 9 Th7 DC SUPPLY DC FEED LINE 2 SIGNAL T2 T4 Th 3 Th 6 Th4 OVERCURRENT PROTECTION OVERCURRENT PROTECTION SIGNAL Th10 Th8 AI4XAM TRANSFORMER COUPLED FOUR-WIRE INTERFACE Figure 12. 4-Wire System For an HDSL d.c. feed voltage of 180 V or less and operation down to an ambient of -25 °C, the following Th1, Th2, Th3 and Th4 protectors are suitable: TISP4250M3 or TISP4250H3, TISP3250H3 (combines Th1 and Th2 or Th3 and Th4) and TISP7250H3 (combines Th1, Th2 and Th7 or Th3, Th4 and Th8). Possible overcurrent protection components are covered in the 2-wire digital systems clause. For ISDN interfaces powered with ±40 V (ETSI, ETS 300 012 1992) the following Th1, Th2, Th3 and Th4 protectors are suitable: TISP4070M3 or TISP4070H3 or TISP4070L3, TISP3070F3 or TISP3070H3 (combines Th1 and Th2 or Th3 and Th4) and TISP7070F3 or TISP7070H3 (combines Th1, Th2 and Th7 or Th3, Th4 and Th8). At the terminating adaptor, the Th7 and Th8 protectors do not “see” the d.c. feed voltage and should be selected to not clip the maximum signal level. Generally, the TISP40xxL1 series will be suitable. Internal ISDN lines are not exposed to high stress levels and the chances of a.c. power intrusion are low (ETSI EN 300 386-2 1997). Accordingly, the equipment port protection needs are at a lower level than ports connected to outside lines. Home Phone Networking Using the existing house telephone wiring, home phone networking systems place the local network traffic in a high band above the POTS and ADSL (Asymmetrical Digital Subscriber Line) spectrum. Local network rates are 1 Mbps or more. To reject noise and harmonics, an in-line protection and 5 MHz to 10 MHz bandpass filter module is used for the equipment. These modules are available from magnetic component manufacturers (e.g. Bel Fuse Inc.) A typical circuit for the telephone line magnetics module is shown in Figure 13. Transformer T1 isolates the equipment from the house wiring. The isolated winding output is voltage limited by a very low-voltage protector, Th1. With a differential voltage of about 12 V peak to peak, the TISP4015L1 could be used for Th1. After filtering, connection is made to the differential transceiver of the processing IC. TIP T1 FILTER HRTRX+ Th1 C1 HRTRXAI4XAP PROTECTION RING Figure 13. Home Phone Networking Isolation/filter/protection Circuit AUGUST 1999 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP40xxL1AJ/BJ VLV Overvoltage Protectors MECHANICAL DATA Recommended Printed Wiring Land Pattern Dimensions SMA Land Pattern 2.34 (. 092) 1.90 (.075) DIMENSIONS ARE: 2.16 (.085) MILLIMETERS (INCHES) MDXX BIC SMB Land Pattern 2.54 (.100) 2.40 (.095) DIMENSIONS ARE: 2.16 (.085) MILLIMETERS (INCHES) MDXX BIB Device Symbolization Code Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified. Device TISP4015L1AJ TISP4030L1AJ TISP4040L1AJ Symbolization Code 4015L 4030L 4040L Device TISP4015L1BJ TISP4030L1BJ TISP4040L1BJ Symbolization Code 4015L1 4030L1 4040L1 Carrier Information For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape. “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in the U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. AUGUST 1999 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Legal Disclaimer Notice This legal disclaimer applies to purchasers and users of Bourns® products manufactured by or on behalf of Bourns, Inc. and P[ZHɉSPH[LZJVSSLJ[P]LS`¸)V\YUZ¹ Unless otherwise expressly indicated in writing, Bourns® products and data sheets relating thereto are subject to change ^P[OV\[UV[PJL