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TISP4070J1BJ THRU TISP4395J1BJ
*R
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxJ1BJ Overvoltage Protector Series
Ground Return Element of Y Configuration
-2x Current Capability of Y Upper Elements
-Available in a Wide Range of Voltages
-Enables Symmetrical and Asymmetrical Y Designs
-SMB (DO-214AA) Package
SMB Package (Top View)
MT1 1
2 MT2
Ion-Implanted Breakdown Region
-Precise and Stable Voltage
-Low Voltage Overshoot Under Surge
VDRM
Device
MD4JAA
Device Symbol
V(BO)
MT2
V
V
TISP4070J1
58
70
TISP4080J1
65
80
TISP4095J1
75
95
TISP4115J1
90
115
TISP4125J1
100
125
TISP4145J1
120
145
TISP4165J1
135
165
TISP4180J1
145
180
TISP4200J1
155
200
TISP4219J1
180
219
TISP4250J1
190
250
2/10
GR-1089-CORE
1000
TISP4290J1
220
290
8/20
IEC 61000-4-5
800
TISP4350J1
275
350
10/160
TIA/EIA-IS-968 (FCC Part 68)
400
TISP4395J1
320
395
10/700
ITU-T K.20/21/45
350
10/560
TIA/EIA-IS-968 (FCC Part 68)
250
10/1000
GR-1089-CORE
200
MT1
SD4JAA
Rated for International Surge Wave Shapes
Wave Shape
Standard
IPPSM
A
............................................ UL Recognized Components
Description
The TISP4xxxJ1BJ is a symmetrical voltage-triggered bidirectional thyristor device which has been designed as the tail (ground return) element
of a Y circuit configured protector. As such, the TISP4xxxJ1BJ must be rated to conduct the sum of the TIP and RING currents. For example,
the normal GR-1089-CORE testing can impose 200 A, 10/1000 and 1000 A, 2/10 on the ground return element of the Y configuration. Using
the TISP4xxxJ1BJ together with two TISP4xxxH3BJ parts gives a 2x 100 A, 10/1000 Y protector circuit. For ITU-T applications, using the
TISP4xxxJ1BJ with a TISP3xxxT3BJ gives a coordinated Y protector with a 2x 120 A, 5/310 capability. Design tables are given in the
Applications Information section. These SMB package combinations are often more space efficient than single package Y protection
multi-chip integrations.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, V DRM, see Figure 1. Voltages above VDRM are
limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device switches into a lowvoltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the
holding current, IH, level the devices switches off and restores normal system operation.
How to Order
Device
Package
TISP4xxxJ1BJ
BJ (SMB/DO-214AA J-Bend)
Carrier
R (Embossed Tape Reeled)
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Order As
TISP4xxxJ1BJR-S
TISP4xxxJ1BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
’4070
±58
’4080
±65
’4095
±75
’4115
±90
’4125
±100
’4145
±120
’4165
Repetitive peak off-state voltage
Value
’4180
±135
VDRM
±145
’4200
±155
’4219
±180
’4250
±190
’4290
±220
’4350
±275
‘4395
±320
Unit
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1000
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 volt age wave shape)
800
10/160 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
400
370
IPPSM
5/310 (ITU-T K.20/21, 10/700 volt age wave shape, single)
350
5/320 (TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 voltage wave shape, single)
350
10/560 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 voltage wave shape)
250
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
200
A
Non-repetitive peak on-state current (see Notes 1 and 2)
ITSM
50 Hz, 1 cycle
80
Initial rate of rise of on-s tate current,
A
100
60 Hz, 1 cycle
Linear current ramp, Maximum ramp value < 50 A
Junction temperature
Storage temperature range
di T/dt
800
A/µs
TJ
-40 to +150
°C
Tstg
-65 to +150
°C
NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 °C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.
Recommended Operating Conditions
Component
Min
Series resistor for GR-1089-CORE first-level surge survival
Typ
Max
Unit
0
Series resistor for ITU-T recommendation K. 20/K.45/K.21 (Basic coordi nation with 400 V GDT)
R1, R2 Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 survival
6.5
0
Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 survival
0
Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 survival
0
Ω
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
IDRM
Repetitive peak offstate current
V(BO) AC breakover voltage
V(BO)
Test Conditions
VD = ±VDRM
dv/dt = ±250 V/ms, R SOURCE = 300 Ω
Min
Typ
±5
TA = 85 °C
±10
4070
±70
’4080
±80
’4095
±95
’4115
±115
’4125
±125
’4145
±145
’4165
±165
’4180
±180
’4200
±200
’4219
±219
’4250
±250
’4290
±290
’4350
±350
‘4395
±395
4070
±77
’4080
±88
’4095
±104
’4115
±125
’4125
±135
dv/dt ≤±1000 V/µs, Linear voltage ramp,
’4145
±156
Ramp breakover
Maximum ramp value = ±500 V
’4165
±177
voltage
di/dt = ±20 A/µs, Linear current ramp,
’4180
±192
Maximum ramp value = ±10 A
’4200
±212
’4219
±231
’4250
±263
’4290
±303
’4350
±364
‘4395
V(BO)
Max
TA = 25 °C
Unit
µA
V
V
±409
4070
±96
’4080
±101
’4095
±112
’4115
±130
’4125
±140
’4145
±161
Impulse breakover
2/10 wave shape, I PP = ±1000 A, RS = 2.5 Ω,
’4165
±183
voltage
(see Note 3)
’4180
±199
’4200
±221
’4219
±242
’4250
±276
’4290
±320
’4350
±386
‘4395
±434
V
NOTE 3: Dynamic voltage measurements should be made with an oscilloscope with limited band width (20 MHz) to avoid high frequency
noise.
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (Continued)
Parameter
I(BO)
IH
dv/dt
ID
Test Conditions
Breakover current
dv/dt = ±250 V/ms,
Holding current
IT = ±5 A, di/dt = +/-30 mA/ms
Critical rate of rise of
off-state voltage
Off-state current
VD = ±50 V
f = 1 MHz,
Off-state capacitance
f = 1 MHz,
f = 1 MHz,
Typ
R SOURCE = 300 Ω
Linear voltage ramp, Maximum ramp value < 0.85 VDRM
f = 1 MHz,
Coff
Min
Vd = 1 V rms, VD = -1 V
Vd = 1 V rms, VD = -2 V
Vd = 1 V rms, VD = -50 V
f = 1 MHz, Vd = 1 V rms, VD = -100 V
(see Note 4)
Unit
±600
mA
±20
mA
±5
kV/µs
TA = 85 °C
Vd = 1 V rms, VD = 0,
Max
±10
µA
‘4070 thru ‘4115
195
235
‘4125 thru ‘4219
120
145
‘4250 thru ‘4395
105
125
‘4070 thru ‘4115
180
215
‘4125 thru ‘4219
110
132
‘4250 thru ‘4395
95
115
‘4070 thru ‘4115
165
200
‘4125 thru ‘4219
100
120
‘4250 thru ‘4395
90
105
‘4070 thru ‘4115
85
100
‘4125 thru ‘4219
50
60
‘4250 thru ‘4395
42
50
‘4125 thru ‘4219
40
50
‘4250 thru ‘4395
35
40
Typ
Max
Unit
90
°C/W
pF
NOTE 4: To avoid possible voltage clipping, the ‘4125 is tested with VD = -98 V
Thermal Characteristics
Parameter
R θJA Junction to free air thermal resistance
Test Condit ions
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 5)
Min
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
IPPSM
Switching
Characteristic
ITSM
V(BO)
I(BO)
IH
VDRM
-v
VD
IDRM
ID
ID
IDRM
VD
VDRM
+v
IH
I(BO)
V(BO)
ITSM
Quadrant III
IPPSM
Switching
Characteristic
-i
Figure 1. Voltage-Current Characteristic for Terminals 1-2
All Measurements are Referenced to Terminal 2
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
PM4XAF
TISP4xxxJ1BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TC4JAG
100
1.15
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE TC4JAF
VD = ±50 V
Normalized Breakover Voltage
|ID| - Off-State Current - µA
10
1
0·1
0·01
1.10
1.05
1.00
0.95
0.90
0·001
-25
0
25
50
75
100
TJ - Junction Temperature - °C
125
-25
150
Figure 2.
2.0
TC4JAA
150
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE TC4JAD
TA = 25 °C
tW = 100 µs
1.5
Normalized Holding Current
IT - On-State Current - A
200
150
125
Figure 3.
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
400
300
0
25
50
75
100
TJ - Junction Temperature - °C
100
70
50
40
30
20
15
10
7
5
4
3
1.0
0.9
0.8
0.7
0.6
0.5
2
1.5
1
0.7
0.4
1
1.5 2
3
4 5
7
VT - On-State Voltage - V
Figure 4.
10
15
-25
0
25
50
75
100
TJ - Junction Temperature - °C
125
150
Figure 5.
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Typical Characteristics
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
TC4JABB
1
TC4JAE
90
0.9
Capacitance Normalized to VD = 0
0.7
C - Differential Off-State Capacitance - pF
TJ = 25 °C
Vd = 1 Vrms
0.8
0.6
0.5
0.4
0.3
0.2
0.5
1
2 3
5
10
20 30
VD - Off-state Voltage - V
50
80
70
60
50
40
50
100150
C = Coff(-2 V) - Coff(-50 V)
60 70 80 90 100
150
200 250 300 350
VDRM - Repetitive Peak Off-State Voltage - V
Figure 6.
Figure 7.
NORMALIZED CAPACITANCE ASYMMETRY
vs
OFF-STATE VOLTAGE
TC4JCC
2.5
Normalized Capacitance Asymmetry - %
Vd = 10 mV rms, 1 MHz
2.0
1.5
1.0
Vd = 1 V rms, 1 MHz
0.5
0.0
0.5 0.7 1
2
3 4 5 7 10
20
VD — Of f -State Voltage — V
Figure 8.
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
30 4050
TISP4xxxJ1BJ Overvoltage Protector Series
Rating and Thermal Information
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
TI4JAA
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN /ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
30
20
15
TI4JADC
1.00
0.99
0.98
Derating Factor
ITSM(t) - Non-Repetitive Peak On-State Current - A
40
10
9
8
7
6
5
0.97
0.96
'4070
THRU
'4115
'4125
THRU
'4219
0.95
4
0.94
3
2
0·1
1
10
100
t - Current Duration - s
Figure 9.
1000
'4250
THRU
'4395
0.93
-40 -35 -30 -25 -20 -15 -10 -5
0
5
10 15 20 25
TAMIN - Minimum Ambient Temperature - °C
Figure 10.
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
APPLICATIONS INFORMATION
Y Configuration Design
This protection configuration has three modes of protection. The RING to TIP terminal pair protection is given by the series combination of
protectors Th1a and Th1b, see Figure 11. The terminal pair protection voltage will be the sum of the V(BO), breakover voltage, of Th1a and the
V(BO) of Th1b. Protectors Th1a and Th1b are the same device type and the terminal pair protection voltage will be 2 V(BO)1. For a terminal pair
protection voltage of ±400 V, Th1a and Th1b would have V (BO)1 = ±400/2 = ±200 V.
Similarly for the other terminal pairs, RING to GROUND protection is given by the series combination of Th1b and Th2 and the terminal pair
protection voltage is V(BO)1 + V(BO)2. TIP to GROUND protection voltage will also be V(BO)1 + V (BO)2.
The maximum terminal pair voltage before clipping might occur is the sum of the protector VDRM , off-state voltages, see Figure 12. For RING to
TIP this will be 2 VDRM1. The ±200 V V(BO)1 protectors of the previous example have a VDRM of ±155 V, giving a maximum non-clipping signal
voltage of ±310 V. For RING to GROUND and TIP to GROUND terminal pairs, the maximum non-clipping signal voltage will be VDRM1 + V DRM2 .
Under longitudinal surge conditions, when the prospective currents of the line conductors, IRING and ITIP, are equal, Th2, the ground return
protector, carries the sum of the Th1a and Th1b currents, see Figure 13. The current rating of Th2 must be twice that of Th1a and Th1b.
RING
TIP
2 V(BO)1
Th1a
Th1b
V(BO)1
TIP
V(BO)1
TIP
2 VDRM1
Th1a
Th1b
VDRM1
VDRM1
I
V(BO)1 + V (BO)2
V(BO)1 + V(BO)2
V(BO)2
VDRM1 + VDRM2
Th2
VDRM2
AI4JAC
Figure 11. Protection Voltage
VDRM1 + VDRM2
Th2
ITIP
IRING
Th1a
ITIP + I RING
Th1b
Th2
AI4JAA
AI4JAB
Figure 12. Off-State Voltage
PROTECTED SIDE
RING
UNPROTECTED SIDE
RING
Figure 13. Current Flow
GR-1089-CORE Designs
The main impulse waveforms of the standard are 500 A, 2/10 and 100 A, 10/1000. Assuming fuse current limiters, F1a and F1b, a suitable
Th1a and Th1b protector for these conductor currents is the TISP4xxxH3BJ series of devices. The ground return protector, Th2, must be rated
for at least 1000 A,2/10 and 200 A, 10/1000. A suitable Th2 protector for these ground currents is the TISP4xxxJ1BJ series of devices. This
arrangement is shown in Figure 14 and the following table lists all the catalogue device combinations.
RING to TIP Voltages
RING to GROUND,
TIP to GROUND Voltages
GR-1089-CORE Y Configuration Parts and Part Voltages
VDRM
V(BO)
VDRM
V(BO)
Th1a, Th1b
Th2
VDRM
V
V
V
V
Part #
Part #
V
V
±116
±140
±116
±140
TISP4070H3BJ
TISP4070J1BJ
±58
±70
V(BO)
±130
±160
±130
±160
TISP4080H3BJ
TISP4080J1BJ
±65
±80
±150
±190
±150
±190
TISP4095H3BJ
TISP4095J1BJ
±75
±95
±115
±180
±230
±180
±230
TISP4115H3BJ
TISP4115J1BJ
±90
±200
±250
±200
±250
TISP4125H3BJ
TISP4125J1BJ
±100
±125
±240
±290
±240
±290
TISP4145H3BJ
TISP4145J1BJ
±120
±145
±270
±330
±270
±330
TISP4165H3BJ
TISP4165J1BJ
±135
±165
±290
±360
±290
±360
TISP4180H3BJ
TISP4180J1BJ
±145
±180
±310
±400
±310
±400
TISP4200H3BJ
TISP4200J1BJ
±155
±200
±360
±438
±360
±438
TISP4219H3BJ
TISP4219J1BJ
±180
±219
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
GR-1089-CORE Designs (Continued)
RING to TIP Voltages
RING to GROUND,
TIP to GROUND Voltages
GR-1089-CORE Y Configuration Parts and Part Voltages
VDRM
V(BO)
VDRM
V(BO)
Th1a, Th1b
Th2
VDRM
V
V
V
V
Part #
Part #
V
V
±380
±500
±380
±500
TISP4250H3BJ
TISP4250J1BJ
±190
±250
V(BO)
±440
±580
±440
±580
TISP4290H3BJ
TISP4290J1BJ
±220
±290
±550
±700
±550
±700
TISP4350H3BJ
TISP4350J1BJ
±275
±350
±640
±790
±640
±790
TISP4395H3BJ
TISP4395J1BJ
±320
±395
RING
TIP
F1b
RING
TIP
F1a
Th1a
TISP4xxxH3BJ
R1b
R1a
Th1a + Th1b
TISP4xxxT3BJ
Th1b
TISP4xxxH3BJ
Th2
TISP4xxxJ1BJ
Th2
TISP4xxxJ1BJ
AI4JAE
AI4JAD
Figure 14. GR-1089-CORE Design
Figure 15. Coordinated ITU-T K Recommendation Design
ITU-T K.20, K.45 and K.21 Designs
The main impulse voltage wave shape of these recommendations is 10/700. The current wave shape is loading dependent, but it is 5/310 into
a short circuit. To coordinate with a ±400 V primary protector a minimum series resistance of 6.5 Ω is required (“The New ITU-T
Telecommunication Equipment Resistibility Recommendations”, Compliance Engineering Magazine, January-February 2002). The coordination
resistance limits the peak non-truncated current to ±400/6.5 = 62 A. A suitable Th1a and Th1b protector for these conductor currents is the
TISP3xxxT3BJ series of devices, which combine Th1a and Th1b in a single SMB3 package. The ground return protector, Th2, must be rated
for at least 124 A of a 5/310 waveshape. Suitable Th2 protectors for these ground currents are the TISP4xxxH3BJ or TISP4xxxJ1BJ series of
devices. The arrangement is shown in Figure 15 and the following table lists all the catalogue device combinations. Using the SMB3 packaged
TISP3xxxT3BJ saves one third of the PCB placement area compared to solution using three single protector SMB packaged devices.
RING to TIP Voltages
RING to GROUND,
ITU-T Y Configuration Parts and Part Voltages
TIP to GROUND Voltages
R1a = R1b = 6.5 Ω
VDRM
V(BO)
VDRM
V(BO)
Th1a + Th1b
Th2
VDRM
V
V
V
V
Part #
Part #
V
V
±116
±140
±116
±140
TISP3070T3BJ
TISP4070J1BJ
±58
±70
V(BO)
±130
±160
±130
±160
TISP3080T3BJ
TISP4080J1BJ
±65
±80
±150
±190
±150
±190
TISP3095T3BJ
TISP4095J1BJ
±75
±95
±180
±230
±180
±230
TISP3115T3BJ
TISP4115J1BJ
±90
±115
±200
±250
±200
±250
TISP3125T3BJ
TISP4125J1BJ
±100
±125
±240
±290
±240
±290
TISP3145T3BJ
TISP4145J1BJ
±120
±145
±270
±330
±270
±330
TISP3165T3BJ
TISP4165J1BJ
±135
±165
±180
±290
±360
±290
±360
TISP3180T3BJ
TISP4180J1BJ
±145
±310
±400
±310
±400
TISP3200T3BJ
TISP4200J1BJ
±155
±200
±360
±438
±360
±438
TISP3219T3BJ
TISP4219J1BJ
±180
±219
±380
±500
±380
±500
TISP3250T3BJ
TISP4250J1BJ
±190
±250
±440
±580
±440
±580
TISP3290T3BJ
TISP4290J1BJ
±220
±290
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
ITU-T K.20, K.45 and K.21 Designs (Continued)
RING to GROUND,
RING to TIP Voltages
ITU-T Y Configuration Parts and Part Voltages
TIP to GROUND Voltages
R1a = R1b = 6.5 Ω
VDRM
V(BO)
VDRM
V(BO)
Th1a + Th1b
Th2
VDRM
V
V
V
V
Part #
Part #
V
V
±550
±700
±550
±700
TISP3350T3BJ
TISP4350J1BJ
±275
±350
±640
±790
±640
±790
TISP3395T3BJ
TISP4395J1BJ
±320
±395
V(BO)
Asymmetrical Designs
These designs are for special needs, where the RING to TIP protection voltage must be different to the RING to GROUND and TIP to
GROUND voltages. ADSL modem interfaces often have a need for asymmetric voltage limiting, see Figure 16. Here, the RING to TIP voltage
limitation is given by the d.c. blocking capacitor, C1, and the RING to GROUND and TIP to GROUND limitation is insulation breakdown. Often
the breakdown limit is set by the spacing of the PW (Printed Wiring) tracks. Figure 17 shows a solution. Using two ±165 V V (BO) parts for Th1a
and Th1b, the RING to TIP voltage is limited to ±330 V. Using a higher voltage ±350 V V(BO) part for Th2 limits the insulation stress to ±515 V.
Figure 17 and its following table is for a GR-1089-CORE compliant design.
RING to GROUND,
RING to TIP Voltages
TIP to GROUND Voltages
GR-1089-CORE Y Configuration Parts and Part Voltages
Th1a, Th1b
VDRM
V(BO)
VDRM
V(BO)
V
V
V
V
Part #
±270
±330
±410
±515
TISP4165H3BJ
Th2
VDRM
V(BO)
V
V
±135
±165
Part #
TISP4350J1BJ
VDRM
V
±275
V(BO)
V
±350
T1
TIP
RING
C1
Voltage
Limit
TIP
C1
F1b
F1a
Th1a
TISP4165H3BJ
Th1b
TISP4165H3BJ
RING
T1 or PW
Insulation
Breakdown
Th2
TISP4350J1BJ
AI4JAH
Figure 16. ADSL Modem Interface Voltage Limitations
Figure 17. Asymmetrical Design for US ADSL Modems
An ITU-T compliant design would probably require the replacement of the fuses by coordination resistors. With a ±410 V off-state voltage, this
may seem unnecessary as modern primary protectors will switch at lower voltages and automatically coordinate. On a perfect longitudinal
waveform this is true. However, the ITU-T also applies a transverse (metallic) test as well, to simulate non-simultaneous switching of the
primary protection. In this case, one conductor is grounded, which places the RING to TIP protection in parallel with the unswitched primary
protector. The ±270 V off-state voltage is likely to be lower than the primary switching voltage and there isn’t coordination. Under GR-1089CORE conditions with non-simultaneous switching, the 100 A 10/1000 current, which should have gone through the unswitched primary
protector, is diverted through the top arms of the Y into the switched primary, causing a 200 A current flow in that primary protector.
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
MECHANICAL DATA
Recommended Printed Wiring Land Pattern Dimensions
SMB Land Pattern
2.54
(.100)
2.40
(.095)
DIMENSIONS ARE:
2.16
(.085)
MILLIMETERS
(INCHES)
MDXX BID
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Device
Symbolization Code
TISP4070J1
4070J1
TISP4080J1
4080J1
TISP4095J1
4095J1
TISP4115J1
4115J1
TISP4125J1
4125J1
TISP4145J1
4145J1
TISP4165J1
4165J1
TISP4180J1
4180J1
TISP4200J1
4200J1
TISP4219J1
4219J1
TISP4250J1
4250J1
TISP4290J1
4290J1
TISP4350J1
4350J1
TISP4395J1
4395J1
Carrier Information
For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.
Package
Carrier
SMB
Embossed Tape Reel Pack
Standard Quantity
3 000
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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