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74CB3Q3305DCURE4

74CB3Q3305DCURE4

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    VFSOP8

  • 描述:

    IC FET BUS SWITCH DUAL US8

  • 数据手册
  • 价格&库存
74CB3Q3305DCURE4 数据手册
Product Folder Sample & Buy Technical Documents Support & Community Tools & Software SN74CB3Q3305 SCDS141C – OCTOBER 2003 – REVISED NOVEMBER 2015 SN74CB3Q3305 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch 1 Features • • 1 • • • • • • • • • • • • (1) 3 Description (1) High-Bandwidth Data Path (Up to 500 MHz ) 5-V Tolerant I/Os With Device Powered Up or Powered Down Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typical) Rail-to-Rail Switching on Data I/O Ports – 0- to 5-V Switching With 3.3-V VCC – 0- to 3.3-V Switching With 2.5-V VCC Bidirectional Data Flow With Near-Zero Propagation Delay Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 pF Typical) Fast Switching Frequency (fOE = 20 MHz Maximum) Data and Control Inputs Provide Undershoot Clamp Diodes Low Power Consumption (ICC= 0.25 mA Typical) VCC Operating Range From 2.3 V to 3.6 V Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V) Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs Ioff Supports Partial-Power-Down Mode Operation Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, SCDA008. The SN74CB3Q3305 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3305 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver. Device Information(1) PART NUMBER SN74CB3Q3305 PACKAGE 2.00 mm × 3.10 mm TSSOP (8) 3.00 mm × 6.10 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Schematic, Each FET Switch (SW) B A 2 Applications • • • • • • • IP Phones: Wired and Wireless Optical Modules Optical Networking: Video Over Fiber and EPON Private Branch Exchange (PBX) WiMAX and Wireless Infrastructure Equipment USB, Differential Signal interface Bus isolation BODY SIZE (NOM) VSSOP (8) VCC Charge Pump EN(1) (1) EN is the internal enable signal applied to the switch. 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. SN74CB3Q3305 SCDS141C – OCTOBER 2003 – REVISED NOVEMBER 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 8 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 3 6.1 6.2 6.3 6.4 6.5 6.6 6.7 3 4 4 4 4 5 6 Absolute Maximum Ratings ..................................... ESD Ratings.............................................................. Recommended Operating Conditions ...................... Thermal Information .................................................. Electrical Characteristics........................................... Switching Characteristics .......................................... Typical Characteristics .............................................. Parameter Measurement Information .................. 7 Detailed Description .............................................. 8 8.1 Overview ................................................................... 8 8.2 Functional Block Diagram ......................................... 8 8.3 Feature Description................................................... 8 8.4 Device Functional Modes.......................................... 8 9 Application and Implementation .......................... 9 9.1 Application Information.............................................. 9 9.2 Typical Application ................................................... 9 10 Power Supply Recommendations ..................... 10 11 Layout................................................................... 10 11.1 Layout Guidelines ................................................. 10 11.2 Layout Example .................................................... 10 12 Device and Documentation Support ................. 11 12.1 12.2 12.3 12.4 12.5 Documentation Support ........................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 11 11 11 11 11 13 Mechanical, Packaging, and Orderable Information ........................................................... 11 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision B (October 2009) to Revision C • 2 Page Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1 Submit Documentation Feedback Copyright © 2003–2015, Texas Instruments Incorporated Product Folder Links: SN74CB3Q3305 SN74CB3Q3305 www.ti.com SCDS141C – OCTOBER 2003 – REVISED NOVEMBER 2015 5 Pin Configuration and Functions PW Package 8-Pin TSSOP Top View 1OE 1A 1B GND 1 8 2 7 3 6 4 5 DCU Package 8-Pin VSSOP Top View VCC 2OE 2B 2A 1OE 1 8 VCC 1A 2 7 2OE 1B 3 6 2B GND 4 5 2A Pin Functions PIN NAME NO. I/O DESCRIPTION 1A 2 I/O Channel 1 A port 1B 3 I/O Channel 1 B port 1OE 1 I 2A 5 I/O Channel 2 A port 2B 6 I/O Channel 2 B port 2OE 7 I GND 4 — Ground Vcc 8 — Power supply Output Enable for switch 1 Output Enable for switch 2 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VCC Supply voltage –0.5 4.6 V VIN Control input voltage (2) (3) –0.5 7 V VI/O Switch I/O voltage (2) (3) (4) –0.5 7 V IIK Control input clamp current VIN < 0 –50 mA II/OK I/O port clamp current VI/O < 0 –50 mA II/O ON-state switch current (5) ±64 mA Continuous current through VCC or GND ±100 mA θJA Package thermal impedance Tj Junction temperature Tstg Storage temperature (1) (2) (3) (4) (5) (6) (6) –65 88 °C/W 150 °C 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages are with respect to ground, unless otherwise specified. The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed. VI and VO are used to denote specific conditions for VI/O. II and IO are used to denote specific conditions for II/O. The package thermal impedance is calculated in accordance with JESD 51-7. Submit Documentation Feedback Copyright © 2003–2015, Texas Instruments Incorporated Product Folder Links: SN74CB3Q3305 3 SN74CB3Q3305 SCDS141C – OCTOBER 2003 – REVISED NOVEMBER 2015 www.ti.com 6.2 ESD Ratings VALUE Electrostatic discharge V(ESD) (1) (2) Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) 2000 Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) 1000 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions (1) VCC Supply voltage MIN MAX 2.3 3.6 VIH High-level control input voltage VCC = 2.3 V to 2.7 V VIL Low-level control input voltage VCC = 2.3 V to 2.7 V 0.7 VCC = 2.7 V to 3.6 V 0.8 VI/O Data input/output voltage TA Operating free-air temperature (1) 1.7 VCC = 2.7 V to 3.6 V 2 UNIT V V V 0 5.5 V –40 85 °C All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004. 6.4 Thermal Information THERMAL METRIC (1) SN74CB3Q3305 SN74CB3Q3305 DCU (VSSOP) PW (TSSOP) UNIT 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 183 190.6 °C/W RθJC(top) Junction-to-case (top) thermal resistance 64.2 74.0 °C/W RθJB Junction-to-board thermal resistance 62.5 119.4 °C/W ψJT Junction-to-top characterization parameter 4.3 120.0 °C/W ψJB Junction-to-board characterization parameter 62.1 117.7 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.5 Electrical Characteristics over recommended operating free-air temperature range (unless otherwise noted) (1) PARAMETER VIK TEST CONDITIONS MIN VCC = 3.6 V, II = –18 mA VCC = 3.6 V, VIN = 0 to 5.5 V IOZ (3) VCC = 3.6 V, VO = 0 to 5.5 V, VI = 0, Switch OFF, VIN = VCC or GND Ioff VCC = 0, VO = 0 to 5.5 V, VI = 0 ICC VCC = 3.6 V, II/O = 0, Switch ON or OFF, VIN = VCC or GND Control inputs IIN ΔICC (4) Control inputs ICCD (5) A and B ports open, Per control VCC = 3.6 V, input Control input switching at 50% duty cycle (1) (2) (3) (4) (5) 4 TYP (2) 0.25 VCC = 3.6 V, One input at 3 V, Other inputs at VCC or GND 0.040 MAX UNIT –1.8 V ±1 µA ±1 µA 1 µA 0.7 mA 25 µA 0.045 mA/ MHz VIN and IIN refer to control inputs. VI, VO, II, and IO refer to data pins. All typical values are at VCC = 3.3 V (unless otherwise noted), TA = 25°C. For I/O ports, the parameter IOZ includes the input leakage current. This is the increase in supply current for each input that is at the specified TTL voltage level, rather than VCC or GND. This parameter specifies the dynamic power-supply current associated with the operating frequency of a single control input (see Figure 5). Submit Documentation Feedback Copyright © 2003–2015, Texas Instruments Incorporated Product Folder Links: SN74CB3Q3305 SN74CB3Q3305 www.ti.com SCDS141C – OCTOBER 2003 – REVISED NOVEMBER 2015 Electrical Characteristics (continued) over recommended operating free-air temperature range (unless otherwise noted)(1) PARAMETER Control inputs Cin TEST CONDITIONS MIN TYP (2) MAX 2.5 3.5 pF UNIT VCC = 3.3 V, VIN = 5.5 V, 3.3 V, or 0 Cio(OFF) VCC = 3.3 V, Switch OFF, VIN = VCC or GND, VI/O = 5.5 V, 3.3 V, or 0 3.5 5 pF Cio(ON) VCC = 3.3 V, Switch ON, VIN = VCC or GND, VI/O = 5.5 V, 3.3 V, or 0 8 10.5 pF 3 8 3.5 9 3 6 3.5 8 VCC = 2.3 V, TYP at VCC = 2.5 V ron (6) VI = 1.7 V, IO = –15 mA VI = 0, IO = 30 mA VCC = 3 V (6) VI = 0, IO = 30 mA VI = 2.4 V, IO = –15 mA Ω Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is determined by the lower of the voltages of the two (A or B) terminals. 6.6 Switching Characteristics over recommended operating free-air temperature range (unless otherwise noted) (see Figure 2) FROM (INPUT) TO (OUTPUT) fOE (1) OE A or B tpd (2) A or B B or A ten OE A or B tdis OE A or B PARAMETER (1) (2) VCC MIN MAX VCC = 2.5 V ± 0.2 V 10 VCC = 3.3 V ± 0.3 V 20 VCC = 2.5 V ± 0.2 V 0.09 VCC = 3.3 V ± 0.3 V 0.15 VCC = 2.5 V ± 0.2 V 1 5 VCC = 3.3 V ± 0.3 V 1 4.5 VCC = 2.5 V ± 0.2 V 1 4.5 VCC = 3.3 V ± 0.3 V 1 5 UNIT MHz ns ns ns Maximum switching frequency for control input (VO > VCC, VI = 5 V, RL ≥ 1 MΩ, CL = 0). The propagation delay is the calculated RC time constant of the typical ON-state resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance). Submit Documentation Feedback Copyright © 2003–2015, Texas Instruments Incorporated Product Folder Links: SN74CB3Q3305 5 SN74CB3Q3305 SCDS141C – OCTOBER 2003 – REVISED NOVEMBER 2015 www.ti.com 6.7 Typical Characteristics ron – ON-State Resistance – Ω 16 14 12 VCC = 3.3 V TA = 25°C IO = –15 mA 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VI – V Figure 1. Typical ron vs VI 6 Submit Documentation Feedback Copyright © 2003–2015, Texas Instruments Incorporated Product Folder Links: SN74CB3Q3305 SN74CB3Q3305 www.ti.com SCDS141C – OCTOBER 2003 – REVISED NOVEMBER 2015 7 Parameter Measurement Information VCC Input Generator VIN 50 Ω 50 Ω VG1 TEST CIRCUIT DUT 2 × VCC Input Generator VI S1 RL VO 50 Ω 50 Ω VG2 RL CL (see Note A) TEST VCC S1 RL VI CL tpd(s) 2.5 V ± 0.2 V 3.3 V ± 0.3 V Open Open 500 Ω 500 Ω VCC or GND VCC or GND 30 pF 50 pF tPLZ/tPZL 2.5 V ± 0.2 V 3.3 V ± 0.3 V 2 × VCC 2 × VCC 500 Ω 500 Ω GND GND 30 pF 50 pF 0.15 V 0.3 V tPHZ/tPZH 2.5 V ± 0.2 V 3.3 V ± 0.3 V GND GND 500 Ω 500 Ω VCC VCC 30 pF 50 pF 0.15 V 0.3 V V∆ VCC Output Control (VIN) VCC/2 VCC VCC/2 VCC/2 0V tPLH VOH Output VCC/2 tPLZ Output Waveform 1 S1 at 2 × VCC (see Note B) VCC VCC/2 VCC/2 VOL tPHZ Output Waveform 2 S1 at GND (see Note B) VOLTAGE WAVEFORMS PROPAGATION DELAY TIMES (tpd(s)) VOL + V∆ VOL tPZH tPHL VCC/2 0V tPZL Output Control (VIN) Open GND VOH VCC/2 VOH − V∆ 0V VOLTAGE WAVEFORMS ENABLE AND DISABLE TIMES NOTES: A. CL includes probe and jig capacitance. B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control. Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control. C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr ≤ 2.5 ns, tf ≤ 2.5 ns. D. The outputs are measured one at a time, with one transition per measurement. E. tPLZ and tPHZ are the same as tdis. F. tPZL and tPZH are the same as ten. G. tPLH and tPHL are the same as tpd(s). The tpd propagation delay is the calculated RC time constant of the typical ON-state resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance). H. All parameters and waveforms are not applicable to all devices. Figure 2. Test Circuit and Voltage Waveforms Submit Documentation Feedback Copyright © 2003–2015, Texas Instruments Incorporated Product Folder Links: SN74CB3Q3305 7 SN74CB3Q3305 SCDS141C – OCTOBER 2003 – REVISED NOVEMBER 2015 www.ti.com 8 Detailed Description 8.1 Overview The SN74CB3Q3305 device is organized as two 1-bit switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is high, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low, the associated 1-bit bus switch is OFF and a high-impedance state exists between the A and B ports. 8.2 Functional Block Diagram 2 3 1A 1OE 1B SW 1 5 6 2A 2B SW 7 2OE Figure 3. Logic Diagram (Positive Logic) 8.3 Feature Description The device supports High-Bandwidth data path up to 500 MHz . The I/O ports are 5-V tolerant when powered up or powered down due to IOFF. The charge pump creates low and flat ON-state resistance characteristics over the whole operating temperature range. Rail-to-Rail switching on data I/O ports is 0-V to 5-V with 3.3-V VCC or 0-V to 3.3-V with 2.5-V VCC The data flow is bidirectional with near-zero propagation delay. Reduced input/output capacitance for higher speed applications. OE can be toggled at the high speeds of 20 MHz for fast switching applications. 8.4 Device Functional Modes Table 1 lists the functional modes of the SN74CB3Q3305. Table 1. Function Table (Each Bus Switch) 8 INPUT OE INPUT/OUTPUT A FUNCTION H B A port = B port L Z Disconnect Submit Documentation Feedback Copyright © 2003–2015, Texas Instruments Incorporated Product Folder Links: SN74CB3Q3305 SN74CB3Q3305 www.ti.com SCDS141C – OCTOBER 2003 – REVISED NOVEMBER 2015 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The SN74CB3Q3305 can be used as bidirectional switch as shown in the application Figure 4 .The master operates at 5 V and the slave can accept 5 V. With 3 VCC on the device , the two ports can be connected. OE pin is used to control the chip from Master controller. This is a very generic example and could apply to many situations. If an application requires 1 bit, tie the OE to low and the ports A and B side to either high or low (not shown). 9.2 Typical Application 3V 5V 0.1 PF 1 1OE 2 VCC 8 1A 2OE 7 5 2A 2B 6 4 GND 1B 3 MASTER 5V SLAVE SN74CB3Q3305 Figure 4. Typical Application of the SN74CB3Q3305 9.2.1 Design Requirements 1. Recommended Input Conditions: – For specified high and low levels, see VIH and VIL in Recommended Operating Conditions (1) . – Inputs and outputs are overvoltage tolerant allowing them to go as high as 5.5 V at any valid VCC. 2. Absolute Maximum Conditions: – I/O currents should not exceed ±64 mA per channel. – Continuos current through GND or VCC should not exceed ±100 mA. 3. Frequency Selection Criterion: – Maximum frequency tested is 500 MHz. – Added trace resistance/capacitance can reduce maximum frequency capability; use layout practices as directed in Layout. 9.2.2 Detailed Design Procedure The 0.1-µF capacitor should be placed as close as possible to the device. (1) All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004. Submit Documentation Feedback Copyright © 2003–2015, Texas Instruments Incorporated Product Folder Links: SN74CB3Q3305 9 SN74CB3Q3305 SCDS141C – OCTOBER 2003 – REVISED NOVEMBER 2015 www.ti.com Typical Application (continued) 9.2.3 Application Curve 12 VCC = 3.3 V TA = 25°C A and B Ports Open 10 I CC – mA 8 6 4 One OE Switching 2 0 0 2 4 6 8 10 12 14 16 18 20 OE Switching Frequency − MHz Figure 5. Typical ICC vs OE Switching Frequency 10 Power Supply Recommendations The power supply can be any voltage between the minimum and maximum supply voltage rating listed in the Absolute Maximum Ratings table. Each VCC terminal should have a good bypass capacitor to prevent power disturbance. For devices with a single supply, a 0.1-μF bypass capacitor is recommended. If multiple pins are labeled VCC, then a 0.01-μF or 0.022-μF capacitor is recommended for each VCC because the VCC pins are tied together internally. For devices with dualsupply pins operating at different voltages, for example VCC and VDD, a 0.1-µF bypass capacitor is recommended for each supply pin. To reject different frequencies of noise, use multiple bypass capacitors in parallel. Capacitors with values of 0.1 μF and 1 μF are commonly used in parallel. The bypass capacitor should be installed as close to the power terminal as possible for best results. 11 Layout 11.1 Layout Guidelines Reflections and matching are closely related to the loop antenna theory but are different enough to be discussed separately from the theory. When a PCB trace turns a corner at a 90° angle, a reflection can occur. A reflection occurs primarily because of the change of width of the trace. At the apex of the turn, the trace width increases to 1.414 times the width. This increase upsets the transmission-line characteristics, especially the distributed capacitance and self–inductance of the trace which results in the reflection. Not all PCB traces can be straight and therefore some traces must turn corners. Figure 6 shows progressively better techniques of rounding corners. Only the last example (BEST) maintains constant trace width and minimizes reflections. 11.2 Layout Example BETTER BEST 2W WORST 1W min. W Figure 6. Trace Example 10 Submit Documentation Feedback Copyright © 2003–2015, Texas Instruments Incorporated Product Folder Links: SN74CB3Q3305 SN74CB3Q3305 www.ti.com SCDS141C – OCTOBER 2003 – REVISED NOVEMBER 2015 12 Device and Documentation Support 12.1 Documentation Support 12.1.1 Related Documentation For related documentation see the following: • CBT-C, CB3T, and CB3Q Signal-Switch Families, SCDA008 • Implications of Slow or Floating CMOS Inputs, SCBA004 • Selecting the Right Texas Instruments Signal Switch, SZZA030 12.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 12.3 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 12.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2003–2015, Texas Instruments Incorporated Product Folder Links: SN74CB3Q3305 11 PACKAGE OPTION ADDENDUM www.ti.com 17-Aug-2015 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) TBD Call TI Call TI -40 to 85 Device Marking (4/5) 74CB3Q3305DCURE4 ACTIVE VSSOP DCU 8 74CB3Q3305DCURG4 ACTIVE VSSOP DCU 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 GARR SN74CB3Q3305DCUR ACTIVE VSSOP DCU 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU | CU SN Level-1-260C-UNLIM -40 to 85 (GARQ ~ GARR) SN74CB3Q3305PW ACTIVE TSSOP PW 8 150 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 BU305 SN74CB3Q3305PWG4 ACTIVE TSSOP PW 8 150 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 BU305 SN74CB3Q3305PWR ACTIVE TSSOP PW 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU | CU SN Level-1-260C-UNLIM -40 to 85 BU305 SN74CB3Q3305PWRE4 ACTIVE TSSOP PW 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 BU305 SN74CB3Q3305PWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 BU305 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com (4) 17-Aug-2015 There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 18-Dec-2016 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 74CB3Q3305DCURG4 VSSOP DCU 8 3000 180.0 SN74CB3Q3305DCUR VSSOP DCU 8 3000 SN74CB3Q3305PWR TSSOP PW 8 2000 SN74CB3Q3305PWR TSSOP PW 8 SN74CB3Q3305PWRG4 TSSOP PW 8 B0 (mm) K0 (mm) P1 (mm) 8.4 2.25 3.35 1.05 4.0 180.0 8.4 2.25 3.35 1.05 330.0 12.4 7.0 3.6 1.6 2000 330.0 12.4 7.0 3.6 2000 330.0 12.4 7.0 3.6 Pack Materials-Page 1 W Pin1 (mm) Quadrant 8.0 Q3 4.0 8.0 Q3 8.0 12.0 Q1 1.6 8.0 12.0 Q1 1.6 8.0 12.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 18-Dec-2016 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) 74CB3Q3305DCURG4 VSSOP DCU 8 3000 202.0 201.0 28.0 SN74CB3Q3305DCUR VSSOP DCU 8 3000 202.0 201.0 28.0 SN74CB3Q3305PWR TSSOP PW 8 2000 367.0 367.0 35.0 SN74CB3Q3305PWR TSSOP PW 8 2000 364.0 364.0 27.0 SN74CB3Q3305PWRG4 TSSOP PW 8 2000 367.0 367.0 35.0 Pack Materials-Page 2 PACKAGE OUTLINE PW0008A TSSOP - 1.2 mm max height SCALE 2.800 SMALL OUTLINE PACKAGE C 6.6 TYP 6.2 SEATING PLANE PIN 1 ID AREA A 0.1 C 6X 0.65 8 1 3.1 2.9 NOTE 3 2X 1.95 4 5 B 4.5 4.3 NOTE 4 SEE DETAIL A 8X 0.30 0.19 0.1 C A 1.2 MAX B (0.15) TYP 0.25 GAGE PLANE 0 -8 0.15 0.05 0.75 0.50 DETAIL A TYPICAL 4221848/A 02/2015 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.15 mm per side. 4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side. 5. Reference JEDEC registration MO-153, variation AA. www.ti.com EXAMPLE BOARD LAYOUT PW0008A TSSOP - 1.2 mm max height SMALL OUTLINE PACKAGE 8X (1.5) 8X (0.45) SYMM 1 8 (R0.05) TYP SYMM 6X (0.65) 5 4 (5.8) LAND PATTERN EXAMPLE SCALE:10X SOLDER MASK OPENING METAL SOLDER MASK OPENING METAL UNDER SOLDER MASK 0.05 MAX ALL AROUND 0.05 MIN ALL AROUND SOLDER MASK DEFINED NON SOLDER MASK DEFINED SOLDER MASK DETAILS NOT TO SCALE 4221848/A 02/2015 NOTES: (continued) 6. Publication IPC-7351 may have alternate designs. 7. Solder mask tolerances between and around signal pads can vary based on board fabrication site. www.ti.com EXAMPLE STENCIL DESIGN PW0008A TSSOP - 1.2 mm max height SMALL OUTLINE PACKAGE 8X (1.5) 8X (0.45) SYMM (R0.05) TYP 1 8 SYMM 6X (0.65) 5 4 (5.8) SOLDER PASTE EXAMPLE BASED ON 0.125 mm THICK STENCIL SCALE:10X 4221848/A 02/2015 NOTES: (continued) 8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 9. Board assembly site may have different recommendations for stencil design. www.ti.com IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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