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ADS7891IPFBR

ADS7891IPFBR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    TQFP48

  • 描述:

    IC ADC 14BIT SAR 48TQFP

  • 数据手册
  • 价格&库存
ADS7891IPFBR 数据手册
 SLAS410 − DECEMBER 2003              FEATURES D 3 MHz Sample Rate, 14-Bit Resolution D Zero Latency D Unipolar, Pseudo Differential Input, Range: D D D D D D D D D − 0 V to 2.5 V High Speed Parallel Interface 78 dB SNR and 88.5 dB THD at 3 MSPS Power Dissipation 85 mW at 3 MSPS Nap Mode (10 mW Power Dissipation) Power Down (10 mW) Internal Reference Internal Reference Buffer 8-/14-Bit Bus Transfer 48-Pin TQFP Package APPLICATIONS D Optical Networking (DWDM, MEMS Based Switching) Spectrum Analyzers High Speed Data Acquisition Systems D D D High Speed Close-Loop Systems D Telecommunication D Ultra-Sound Detection DESCRIPTION The ADS7891 is a 14-bit 3-MSPS A-to-D converter with 2.5-V internal reference. The device includes a capacitor based SAR A/D converter with inherent sample and hold. The device offers a 14-bit parallel interface with an additional byte mode that provides easy interface with 8-bit processors. The device has a pseudo-differential input stage. The −IN swing of ±200 mV is useful to compensate for ground voltage mismatch between the ADC and sensor and also to cancel common-mode noise. With nap mode enabled, the device operates at lower power when used at lower conversion rates. The device is available in a 48-pin TQFP package. BYTE SAR +IN −IN + _ Output Latches and 3-State Drivers CDAC 14/8-Bit Parallel Data Output Bus Comparator REFIN CLOCK REFOUT 2.5 V Internal Reference Conversion and Control Logic PWD/RST CONVST BUSY CS RD A_PWD Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.     !"# $ %&'# "$  (&)*%"# +"#', +&%#$ %! # $('%%"#$ (' #-' #'!$  '."$ $#&!'#$ $#"+"+ /""#0, +&%# (%'$$1 +'$ # '%'$$"*0 %*&+' #'$#1  "** (""!'#'$, Copyright  2003, Texas Instruments Incorporated  www.ti.com SLAS410 − DECEMBER 2003 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION MODEL MAXIMUM INTEGRAL LINEARITY (LSB) ADS7891 MAXIMUM DIFFERENTIAL LINEARITY (LSB) ±1.5 NO MISSING CODES AT RESOLUTION (BIT) PACKAGE TYPE 14 48-Pin TQFP +1.5/−1 PACKAGE DESIGNATOR PFB TEMPERATURE RANGE ORDERING INFORMATION TRANSPORT MEDIA QUANTITY ADS7891IPFBT Tape and reel 250 ADS7891IPFBR Tape and reel 1000 −40°C to 85°C NOTE: For most current specifications and package information, refer to the TI website at www.ti.com. ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range(1) UNIT +IN to AGND −0.3 V to +VA + 0.1 V −IN to AGND −0.3 V to 0.5 V +VA to AGND −0.3 V to 7 V +VBD to BDGND −0.3 V to 7 V Digital input voltage to GND −0.3 V to (+VBD + 0.3 V) Digital output to GND −0.3 V to (+VBD + 0.3 V) Operating temperature range −40°C to 85°C Storage temperature range −65°C to 150°C Junction temperature (TJmax) 150°C Power dissipation TQFP package Lead temperature, soldering θJA Thermal impedance Vapor phase (60 sec) Infrared (15 sec) (TJ Max–TA)/ θJA 86°C/W 215°C 220°C (1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2  www.ti.com SLAS410 − DECEMBER 2003 SPECIFICATIONS TA = −40°C to 85°C, +VA = 5 V, +VBD = 5 V or 3.3 V, Vref = 2.5 V, fsample = 3 MHz (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ANALOG INPUT Full-scale input span(1) Absolute input range +IN – (−IN) 0 +IN −0.2 −IN −0.2 Input capacitance Input leakage current Vref Vref + 0.2 +0.2 V V 27 pF 500 pA 14 Bits SYSTEM PERFORMANCE Resolution No missing codes Integral linearity(2) −1.5 14 ±0.75 1.5 −1 ±0.75 1.5 Bits LSB(3) LSB(3) Differential linearity Offset error(4) External reference −1.5 ±0.2 1.5 mV Gain error(4) External reference −1 ±0.2 1 mV Common-mode rejection ratio With common mode input signal = 200 mVp−p at 1 MHz 60 dB Power supply rejection At 3FF0H output code, +VA = 4.75 V to 5.25 V , Vref = 2.50 V 80 dB SAMPLING DYNAMICS Conversion time Acquisition time +VDB = 5 V 255 +VDB = 3 V +VDB = 5 V 60 +VDB = 3 V 60 273 nsec 273 nsec 78 nsec nsec Maximum throughput rate 3 MHz Aperture delay 2 nsec Aperture jitter 20 psec Step response 50 nsec Over voltage recovery 50 nsec DYNAMIC CHARACTERISTICS Total harmonic distortion(5) VIN = 2.496 Vp−p at 100 kHz/2.5 Vref VIN = 2.496 Vp−p at 1 MHz/2.5 Vref −93 −88.5 VIN = 2.496 Vp−p at 1.4 MHz/2.5 Vref VIN = 2.496 Vp−p at 100 kHz/2.5 Vref −79.5 VIN = 2.496 Vp−p at 1 MHz/2.5 Vref VIN = 2.496 Vp−p at 1.4 MHz/2.5 Vref 78 VIN = 2.496 Vp−p at 100 kHz/2.5 Vref VIN = 2.496 Vp−p at 1 MHz/2.5 Vref 78 SINAD 73.8 SFDR VIN = 2.496 Vp−p at 1.4 MHz/2.5 Vref VIN = 2.496 Vp−p at 1 MHz/2.5 Vref SNR −87 dB 78.5 dB 75 77 88 −3 dB Small signal bandwidth dB 90 dB 50 MHz EXTERNAL REFERENCE INPUT Input VREF range Resistance(6) 2.4 2.5 500 2.6 V kΩ (1) Ideal input span; does not include gain or offset error. (2) This is endpoint INL, not best fit. (3) LSB means least significant bit. (4) Measured relative to actual measured reference. (5) Calculated on the first nine harmonics of the input frequency. (6) Can vary ±20%. 3  www.ti.com SLAS410 − DECEMBER 2003 SPECIFICATIONS Continued TA = −40°C to 85°C, +VA = 5 V, +VBD = 5 V or 3.3 V, Vref = 2.5 V, fsample = 3 MHz (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INTERNAL REFERENCE OUTPUT From 95% (+VA), with 1-µF storage capacitor on REFOUT to AGND Start-up time VREF Range Source current IOUT=0 Line regulation +VA = 4.75 V to 5.25 V Drift IOUT = 0 2.48 2.5 Static load 120 msec 2.52 V 10 µA 1 mV 25 PPM/C DIGITAL INPUT/OUTPUT Logic family Logic level CMOS VIH VIL IIH = 5 µA IIL = 5 µA VOH VOL IOH = 2 TTL loads IOL = 2 TTL loads +VBD −1 −0.3 +VBD + 0.3 0.8 V +VBD − 0.6 0 +VBD 0.4 V V V Straight Binary Data format POWER SUPPLY REQUIREMENTS Power supply voltage +VBD +VA 2.7 3.3 5.25 V 4.75 5 5.25 V 17 18 mA 85 90 mW 2 3 Supply current, +VA, 3 MHz sample rate Power dissipation, 3 MHz sample rate +VA = 5 V NAP MODE Supply current, +VA Power-up time(1) 60 mA nsec POWER DOWN Supply current, +VA Power down time(2) Power up time 2 2.5 µA From simulation results 10 µsec 1-µF Storage capacitor on REFOUT to AGND 25 msec Invalid conversions after power up or reset 4 Numbers 85 °C TEMPERATURE RANGE Operating free-air −40 (1) Minimum acquisition time for first sampling after the end of nap state must be 60 nsec more than normal. (2) Time required to reach level of 2.5 µA. 4  www.ti.com SLAS410 − DECEMBER 2003 TIMING REQUIREMENTS All specifications typical at −40°C to 85°C, +VA = +5 V, +VBD = +5 V (see Notes 1, 2, 3, and 4) PARAMETER Conversion time Acquisition time SYMBOL t(conv) t(acq) MIN 60 TYP MAX UNITS REF FIG. 255 273 ns 5 ns 5 ns 3 ns 1 ns 1 ns 1 ns 1 ns 2 ns 2 ns 2 ns 2 78 SAMPLING AND CONVERSION START Hold time CS low to CONVST high (with BUSY high) Delay CONVST high to acquisition start Hold time, CONVST high to CS high with BUSY low Hold time, CONVST low to CS high Delay CONVST low to BUSY high CS width for acquisition or conversion to start Delay CS low to acquisition start with CONVST high Pulse width, from CS low to CONVST low for acquisition to start Delay CS low to BUSY high with CONVST low Quiet sampling time(3) th1 td1 10 th2 th3 10 td2 tw3 td3 tw1 2 4 5 10 40 20 2 4 5 20 td4 40 25 ns CONVERSION ABORT Setup time CONVST high to CS low with BUSY high Delay time CS low to BUSY low with CONVST high tsu1 td5 15 ns 4 20 ns 4 td6 td7 25 ns 5 25 ns 5 td9 td11 25 ns 5 20 ns 5 t1 td8 25 ns 5 25 ns 6 td10 t2 25 ns 6 25 ns 6 10 DATA READ Delay RD low to data valid with CS low Delay BYTE high to LSB word valid with CS and RD low Delay time RD high to data 3-state with CS low Delay time end of conversion to BUSY low Quiet sampling time RD high to CONVST low Delay CS low to data valid with RD low Delay CS high to data 3-state with RD low Quiet sampling time CS low to CONVST low BACK-TO-BACK CONVERSION Delay BUSY low to data valid td12 tw4 ns 7, 8 Pulse width, CONVST high 70 ns 7, 8 Pulse width, CONVST low tw5 20 ns 7 tw6 tw7 ns 12 7200 ns 11 POWER DOWN/RESET Pulse width, low for PWD/RST to reset the device Pulse width, low for PWD/RST to power down the device 45 6140 Delay time, power up after PWD/RST is high td13 25 ms 11 (1) All input signals are specified with tr = tf = 5 ns (10% to 90% of +VBD) and timed from a voltage level of (VIL + VIH)/2. (2) See timing diagram. (3) Quiet period before conversion start, no data bus activity including data bus 3-state is allowed in this period. (4) All timings are measured with 20 pF equivalent loads with 5 V +VBD and 10-pF equivalent loads with 3 V +VBD on all data bits and BUSY pin. 5  www.ti.com SLAS410 − DECEMBER 2003 PWD/RST A_PWD BYTE CONVST CS RD +VA AGND AGND +VA REFM REFM PIN ASSIGNMENTS 48 47 46 45 44 43 42 41 40 39 38 37 REFIN 1 36 BUSY REFOUT 2 35 BDGND NC 3 34 +VBD +VA 4 33 NC NC 5 32 +IN 6 31 DB0 −IN 7 30 DB1 AGND 8 29 +VA 9 28 DB2 DB3 +VA 10 27 DB4 11 26 DB5 AGND 12 25 BDGND AGND 6 DB7 DB6 DB8 DB9 DB10 DB11 DB12 DB13 AGND +VA NC − No connection AGND 13 14 15 16 17 18 19 20 21 22 23 24 +VBD AGND  www.ti.com SLAS410 − DECEMBER 2003 Terminal Functions PIN NAME 16−23, 26−31 DATA BUS I/O DESCRIPTION 8 BIT BUS BYTE = 0 16 BIT BUS 1 0 16 DB13 O D13 (MSB) D5 D13 (MSB) 17 DB12 O D12 D4 D12 18 DB11 O D11 D3 D11 19 DB10 O D10 D2 D10 20 DB9 O D9 D1 D9 21 DB8 O D8 D0 (LSB) D8 22 DB7 O D7 0 D7 23 DB6 O D6 0 D6 26 DB5 O D5 0 D5 27 DB4 O D4 0 D4 28 DB3 O D3 0 D3 29 DB2 O D2 0 D2 30 DB1 O D1 0 D1 31 DB0 O D0 (LSB) 0 D0 (LSB) 36 BUSY O Status output. This pin is high when a conversion is in progress. 39 BYTE I Byte select input. Used for 8-bit bus reading. 0: No fold back. 1: Lower byte D[5:0] is folded back to high byte so D5 is available in D13 place. 40 CONVST I Conversion start. The rising edge starts the acquisition. The falling edge of this input ends the acquisition and starts the conversion. Refer to the timing diagrams for more details. 41 RD I Active low synchronization pulse for the parallel output. When CS is low, this serves as the output enable and puts the previous conversion results on the bus. 37 A_PWD I Nap mode enable, active low 24, 34 +VBD Digital power supply for all digital inputs and outputs. Refer to Table 3 for layout guidelines. 25, 35 BDGND Digital ground for all digital inputs and outputs. Needs to be shorted to analog ground plane below the device. 42 CS I Chip Select. Active low signal enables chip operation like acquisition start, conversion start, bus release from 3-state. Refer to the timing diagrams for more details. 38 PWD/RST I Active low input, acts as device power down/device reset signal. 5, 8, 11, 12, 14, 15, 44, 45 AGND Analog ground pins. Need to be shorted to analog ground plane below the device. 4, 9, 10, 13, 43, 46 +VA Analog power supplies. Refer to Table 3 for layout guidelines. 6 +IN I Non inverting analog input channel 7 −IN I Inverting analog input channel 1 REFIN I Reference (positive) input. Needs to be decoupled with REFM pin using 0.1-µF bypass capacitor and 1-µF storage capacitor. 2 REFOUT O Internal reference output. To be shorted to REFIN pin when internal reference is used. Do not connect to REFIN pin when external reference is used. Always needs to be decoupled with AGND using 0.1-µF bypass capacitor. 47, 48 REFM I Reference ground. To be connected to analog ground plane. 3, 32, 33 NC No connection pins. 7  www.ti.com SLAS410 − DECEMBER 2003 DESCRIPTION AND TIMING DIAGRAMS SAMPLING AND CONVERSION START There are three ways to start sampling. The rising edge of CONVST starts sampling with CS and BUSY being low (see Figure 1) or it can be started with the falling edge of CS when CONVST is high and BUSY is low (see Figure 2). Sampling can also be started with an internal conversion end (before BUSY falling edge) with CS being low and CONVST high before an internal conversion end (see Figure 3). Also refer to the section DEVICE OPERATION AND DATA READ IN BACK-TO-BACK CONVERSION for more details. A conversion can be started two ways (a conversion start is the end of sampling). Either with the falling edge of CONVST when CS is low (see Figure 1) or the falling edge of CS when CONVST is low (see Figure 2). A clean and low jitter falling edge of these respective signals triggers a conversion start and is important to the performance of the converter. The BUSY pin is brought high immediately following the CONVST falling edge. BUSY stays high throughout the conversion process and returns low when the conversion has ended. th2 th3 CS CONVST td1 td2 BUSY t(acq) Figure 1. Sampling and Conversion Start Control With CONVST Pin tw3 tw3 CS td4 CONVST td3 tw1 BUSY t(acq) Figure 2. Sampling and Conversion Start Control With CS Pin CS th1 tw5 CONVST tw4 BUSY td2 t(acq) Figure 3. Sampling Start With CS Low and CONVST High (Back-to-Back) 8  www.ti.com SLAS410 − DECEMBER 2003 CONVERSION ABORT The falling edge of CS aborts the conversion while BUSY is high and CONVST is high (see Figure 4). The device outputs 3F80 (hex) to indicate a conversion abort. td5 BUSY tsu1 CONVST CS RD 11 1111 1000 0000 D13−D0 Figure 4. Conversion Abort DATA READ Two conditions need to be satisfied for a read operation. Data appears on the D13 through D0 pins (with D13 MSB) when both CS and RD are low. Figure 5 and Figure 6 illustrate the device read operation. The bus is three-stated if any one of the signals is high. t1 td2 tw5 CONVST t(conv) td1 + t(acq) BUSY td11 CS RD BYTE td6 D13−D0 td7 D13−6 & D5−0 td9 D5−0 Figure 5. Read Control Via CS and RD There are two output formats available. Fourteen bit data appears on the bus during a read operation while BYTE is low. When BYTE is high, the lower byte (D5 through D0 followed by all zeroes) appears on the data bus with D5 in the MSB. This feature is useful for interfacing with eight bit microprocessors and microcontrollers. 9  www.ti.com SLAS410 − DECEMBER 2003 t2 CONVST td1 + t(acq) BUSY Conversion No N td2 CS BYTE td7 D13−6 & D5−0 D13−D0 Data For Conv. N−1 td10 D5−0 Data For Conv. N td8 Figure 6. Read Control Via CS and RD Tied to BDGND DEVICE OPERATION AND DATA READ IN BACK-TO-BACK CONVERSION The following two figures illustrate device operation in back-to-back conversion mode. It is possible to operate the device at any throughput in this mode, but this is the only mode in which the device can be operated at throughputs exceeding 2.8 MSPS. A conversion starts on the CONVST falling edge. The BUSY output goes high after a delay (td2). Note that care must be taken not to abort the conversion (see Figure 4) apart from timing restrictions shown in Figure 7 and Figure 8. The conversion ends within the conversion time, t(conv), after the CONVST falling edge. The new acquisition can be immediately started without waiting for the BUSY signal to go low. This can be ensured with a CONVST high pulse width that is more than or equal to (t0 – t(conv) + 10 nsec) which is tw4 for a 3-MHz operation. Sample N CONVST tw4 t(acq) tw5 Conversion N BUSY td12 D13−D0 t(conv) + td11 Data For Conversion N−1 (Data read Without Latency) t0 = 333 ns for 3 MSPS Operation Figure 7. Back-To-Back Operation With CS and RD Low 10  www.ti.com SLAS410 − DECEMBER 2003 CS Sample N th1 CONVST tw4 t(acq) tw3 t(conv) + td11 Conversion N BUSY Data For Conversion N−1 td12 D13−D0 (Data read Without Latency) t0 = 333 ns for 3 MSPS Operation Figure 8. Back-To-Back operation With CS Toggling and RD Low NAP MODE The device can be put in nap mode following the sequences shown in Figure 9. This provides substantial power saving while operating at lower sampling rates. While operating the device at throughput rates lower than 2.54 MSPS, A_PWD can be held low (see Figure 9). In this condition, the device goes into the nap state immediately after BUSY goes low and remains in that state until the next sampling starts. The minimum acquisition time is 60 nsec more than t(acq) as defined in the timing requirements section. Alternately, A_PWD can be toggled any time during operation (see Figure 10). This is useful when the system acquires data at the maximum conversion speed for some period of time (back-to-back conversion) and it does not acquire data for some time while the acquired data is being processed. During this period, the device can be put in the nap state to save power. The device remains in the nap state as long as A_PWD is low with BUSY being low and sampling has not started. The minimum acquisition time for the first sampling after the nap state is 60 nsec more than t(acq) as defined in the timing requirements section. A_PWD (Held Low) BUSY SAMPLE (Internal) t(acq) + 60 ns NAP (Internal Active High) NOTE: The SAMPLE (Internal) signal is generated as described in the Sampling and Conversion Start section. Figure 9. Device Operation While A_PWD is Held Low 11  www.ti.com SLAS410 − DECEMBER 2003 A_PWD BUSY SAMPLE (Internal) t(acq) + 60 ns NAP (Internal Active High) NOTE: The SAMPLE (Internal) signal is generated as described in the Sampling and Conversion Start section. Figure 10. Device Operation While A_PWD is Toggling POWERDOWN/RESET A low level on the PWD/RST pin puts the device in the powerdown phase. This is an asynchronous signal. As shown in Figure 11, the device is in the reset phase for the first tw6 period after a high-to-low transition of PWD/RST. During this period the output code is 3F80 (hex) to indicate that the device is in the reset phase. The device powers down if the PWD/RST pin continues to be low for a period of more than tw7. Data is not valid for the first four conversions after a power-up (see Figure 11) or an end of reset (see Figure 12). The device is initialized during the first four conversions. tw7 Valid Conversions PWD/RST First 4 Invalid Conversions BUSY 1 2 3 4 5 td13 D13−D0 11 1111 1000 0000 Power Down Phase RESET Phase Invalid Data Valid Data Figure 11. Device Power Down tw6 45 ns PWD/RST Valid Conversions First 4 Invalid Conversions BUSY D13−D0 1 3 4 5 11 1111 1000 0000 RESET Phase Figure 12. Device Reset 12 2 Invalid Data Valid Data  www.ti.com SLAS410 − DECEMBER 2003 TYPICAL CHARACTERISTICS(1) EFFECTIVE NUMBER OF BITS vs FREE-AIR TEMPERATURE DC CODE SPREAD AT CENTER OF CODE 13 2664 2500 +VA = 5 V, +VBD = 5 V, Code = 8193, Sample Rate = 3 MSPS, Vref = 2.5 V, TA = 255C Count 2000 1500 1350 1000 758 500 208 0 0 18 2 ENOB − Effective Number of Bits − Bits 3000 0 12.9 12.8 12.7 12.6 12.5 12.4 12.3 12.2 12.1 12 −40 8190 8191 8192 8193 8194 8195 8196 8197 Code Figure 13 −20 0 20 40 60 TA − Free-Air Temperature − °C 80 Figure 14 SIGNAL-TO-NOISE AND DISTORTION vs FREE-AIR TEMPERATURE SIGNAL-TO-NOISE RATIO vs FREE-AIR TEMPERATURE 79 79 78.5 SNR − Signal-to-Noise Ratio − dB SINAD − Signal-to-Noise and Distortion − dB fi = 100 kHz, Sample Rate = 3 MSPS, +VA = 5 V, +VBD = 5 V, Vref = 2.5 V 78 77 fi = 100 kHz, Sample Rate = 3 MSPS, +VA = 5 V, +VBD = 5 V, Vref = 2.5 V 76 75 −40 −20 0 20 40 60 TA − Free-Air Temperature − °C Figure 15 78 77.5 77 76.5 76 75.5 80 75 −40 fi = 100 kHz, Sample Rate = 3 MSPS, +VA = 5 V, +VBD = 5 V, Vref = 2.5 V −20 0 20 40 60 TA − Free-Air Temperature − °C 80 Figure 16 (1) At Vref = 2.5 V external, unless otherwise specified. 13  www.ti.com SLAS410 − DECEMBER 2003 TOTAL HARMONIC DISTORTION vs FREE-AIR TEMPERATURE SPURIOUS FREE DYNAMIC RANGE vs FREE-AIR TEMPERATURE −80 THD − Total Harmonic Distortion − dB SFDR − Spurious Free Dynamic Range − dB 105 100 95 90 fi = 100 kHz, Sample Rate = 3 MSPS, +VA = 5 V, +VBD = 5 V, Vref = 2.5 V 85 80 −40 −20 0 20 40 60 TA − Free-Air Temperature − °C fi = 100 kHz, Sample Rate = 3 MSPS +VA = 5 V, +VBD = 5 V, Vref = 2.5 V −85 −90 −95 −100 −105 −40 80 −20 0 20 40 60 TA − Free-Air Temperature − °C Figure 17 Figure 18 SIGNAL-TO-NOISE AND DISTORTION vs INPUT FREQUENCY EFFECTIVE NUMBER OF BITS vs INPUT FREQUENCY 79 TA = 255C, Sample Rate = 3 MSPS, +VA = 5 V, +VBD = 5 V, Vref = 2.5 V 13.5 13 SINAD − Signal-to-Noise and Distortion − dB ENOB − Effective Number of Bits − Bits 14 12.5 12 11.5 11 10.5 78 77 76 75 74 TA = 255C, Sample Rate = 3 MSPS, +VA = 5 V, +VBD = 5 V, Vref = 2.5 V 73 72 10 0 200 400 600 800 1000 1200 fi − Input Frequency − kHz Figure 19 14 80 1400 0 200 400 600 800 1000 fi − Input Frequency − kHz Figure 20 1200 1400  www.ti.com SLAS410 − DECEMBER 2003 SIGNAL-TO-NOISE RATIO vs INPUT FREQUENCY SPURIOUS FREE DYNAMIC RANGE vs INPUT FREQUENCY 105 SNR − Signal-to-Noise Ratio − dB 78 77 76 75 TA = 255C, Sample Rate = 3 MSPS, +VA = 5 V, +VBD = 5 V, Vref = 2.5 V 74 73 SFDR − Spurious Free Dynamic Range − dB 79 TA = 255C, Sample Rate = 3 MSPS, +VA = 5 V, +VBD = 5 V, Vref = 2.5 V 100 95 90 85 80 75 70 72 0 200 0 400 600 800 1000 1200 1400 fi − Input Frequency − kHz 200 400 Figure 21 800 1000 1200 1400 Figure 22 TOTAL HARMONIC DISTORTION vs INPUT FREQUENCY GAIN ERROR vs SUPPLY VOLTAGE −70 1 TA = 255C, Sample Rate = 3 MSPS, +VA = 5 V, +VBD = 5 V, Vref = 2.5 V −75 −80 −85 −90 0.8 0.6 E G − Gain Error − mV THD − Total Harmonic Distortion − dB 600 fi − Input Frequency − kHz TA = 255C, Sample Rate = 3 MSPS, +VBD = 5 V, Vref = 2.5 V 0.4 0.2 0 −0.2 −0.4 −95 −0.6 −100 −0.8 −105 0 200 400 600 800 1000 1200 1400 fi − Input Frequency − kHz Figure 23 −1 4.75 4.85 4.95 5.05 5.15 +VA − Supply Voltage − V 5.25 Figure 24 15  www.ti.com SLAS410 − DECEMBER 2003 GAIN ERROR vs FREE-AIR TEMPERATURE OFFSET ERROR vs SUPPLY VOLTAGE 1 0.5 TA = 255C, Sample Rate = 3 MSPS, +VBD = 5 V, Vref = 2.5 V Sample Rate = 3 MSPS, +VA = 5 V, +VBD = 5 V, Vref = 2.5 V 0.75 0.5 E G − Gain Error − mV E O − Offset Error − mV 1 0 0.25 0 −0.25 −0.5 −0.5 −0.75 −1 4.75 4.85 4.95 5.05 5.15 +VA − Supply Voltage − V −1 −40 5.25 −20 0 20 40 60 TA − Free-Air Temperature − °C Figure 25 Figure 26 POWER DISSIPATION vs SAMPLE RATE OFFSET ERROR vs FREE-AIR TEMPERATURE 1 0.5 90 Sample Rate = 3 MSPS, +VA = 5 V, +VBD = 5 V, Vref = 2.5 V 0.25 0 −0.25 TA = 255C, +VA = 5 V, +VBD = 5 V, Vref = 2.5 V 80 70 NAP Disabled 60 50 NAP Enabled 40 30 −0.5 20 −0.75 10 −1 −40 0 −20 0 20 40 60 TA − Free-Air Temperature − °C Figure 27 16 PD − Power Dissipation − mW E O − Offset Error − mV 0.75 80 80 0 500 1000 1500 2000 Sample Rate − KSPS Figure 28 2500 3000  www.ti.com SLAS410 − DECEMBER 2003 DIFFERENTIAL NONLINEARITY vs FREE-AIR TEMPERATURE POWER DISSIPATION vs FREE-AIR TEMPERATURE 1 90 88 Sample Rate = 3 MSPS, +VA = 5 V, +VBD = 5 V, Vref = 2.5 V DNL − Differential Nonlinearity − LSBs PD − Power Dissipation − mW 89 87 86 85 84 83 82 81 80 −40 −20 0 20 40 60 TA − Free-Air Temperature − °C 0.75 Max 0.5 0.25 Sample Rate = 3 MSPS, +VA = 5 V, +VBD = 5 V, Vref = 2.5 V 0 −0.25 −0.5 Min −0.75 −1 −40 80 −20 0 Figure 29 2.5045 Max Vref − Internal Reference Output − V INL − Integral Nonlinearity − LSBs 80 2.505 0.75 0.5 Sample Rate = 3 MSPS, +VA = 5 V, +VBD = 5 V, Vref = 2.5 V −0.25 −0.5 Min −0.75 −1 −40 60 INTERNAL REFERENCE OUTPUT vs FREE-AIR TEMPERATURE 1 0 40 Figure 30 INTEGRAL NONLINEARITY vs FREE-AIR TEMPERATURE 0.25 20 TA − Free-Air Temperature − °C +VA = 5 V, +VBD = 5 V 2.504 2.5035 2.503 2.5025 2.502 2.5015 2.501 2.5005 −20 0 20 40 60 TA − Free-Air Temperature − °C Figure 31 80 2.5 −40 −20 0 20 40 60 TA − Free-Air Temperature − °C 80 Figure 32 17  www.ti.com SLAS410 − DECEMBER 2003 INTERNAL REFERENCE OUTPUT vs SUPPLY VOLTAGE 2.505 Vref − Internal Reference Output − V 2.5045 TA = 255C, +VBD = 5 V 2.504 2.5035 2.503 2.5025 2.502 2.5015 2.501 2.5005 2.5 4.75 4.85 4.95 5.05 5.15 5.25 +VA − Supply Voltage − V Figure 33 DIFFERENTIAL NONLINEARITY DNL − LSB 1 0.8 TA = 255C, +VA = 5 V, +VBD = 5 V, Sample Rate = 3 MSPS, Vref = 2.5 V 0.6 0.4 0.2 0 −0.2 −0.4 −0.6 −0.8 −1 0 2000 4000 6000 8000 Code 10000 12000 14000 16000 Figure 34 INTEGRAL NONLINEARITY 1.5 TA = 255C, +VA = 5 V, +VBD = 5 V, Sample Rate = 3 MSPS, Vref = 2.5 V INL − LSB 1 0.5 0 −0.5 −1 −1.5 0 2000 4000 6000 8000 Code Figure 35 18 10000 12000 14000 16000  www.ti.com SLAS410 − DECEMBER 2003 FFT Signal Power − dB 20 TA = 255C, +VA = 5 V, +VBD = 5 V, Sample Rate = 3 MSPS, Vref = 2.5 V, fi = 0.99 MHz 0 −20 −40 −60 −80 −100 −120 −140 −160 −180 0 0.2 0.4 0.6 0.8 1 1.2 1.4 fi − Input Frequency − MHz Figure 36 19  www.ti.com SLAS410 − DECEMBER 2003 PRINCIPLES OF OPERATION The ADS7891 is a member of a family of high-speed successive approximation register (SAR) analog-to-digital converters (ADC). The architecture is based on charge redistribution, which inherently includes a sample/hold function. The conversion clock is generated internally. The conversion time is 273 ns max (at 5 V +VBD). The analog input is provided to two input pins: +IN and −IN. (Note that this is pseudo differential input and there are restrictions on –IN voltage range.) When a conversion is initiated, the difference voltage between these pins is sampled on the internal capacitor array. While a conversion is in progress, both inputs are disconnected from any internal function. REFERENCE The ADS7891 has a built-in 2.5-V (nominal value) reference but can operate with an external reference. When an internal reference is used, pin 2 (REFOUT) should be connected to pin 1 (REFIN) with an 0.1-µF decoupling capacitor and a 1-µF storage capacitor between pin 2 (REFOUT) and pins 47, 48 (REFM). The internal reference of the converter is buffered . There is also a buffer from REFIN to CDAC. This buffer provides isolation between the external reference and the CDAC and also recharges the CDAC during conversion. It is essential to decouple REFOUT to AGND with a 0.1-µF capacitor while the device operates with an external reference. ANALOG INPUT When the converter enters hold mode, the voltage difference between the +IN and −IN inputs is captured on the internal capacitor array. The voltage on the −IN input is limited to between –0.2 V and 0.2 V, thus allowing the input to reject a small signal which is common to both the +IN and −IN inputs. The +IN input has a range of –0.2 V to (+Vref +0.2 V). The input span (+IN – (−IN)) is limited from 0 V to VREF. The input current on the analog inputs depends upon a number of factors: sample rate, input voltage, signal frequency, and source impedance. Essentially, the current into the ADS7891 charges the internal capacitor array during the sample period. After this capacitance has been fully charged, there is no further input current (this may not happen when a signal is moving continuously). The source of the analog input voltage must be able to charge the input capacitance (27 pF) to better than a 14-bit settling level with a step input within the acquisition time of the device. The step size can be selected equal to the maximum voltage difference between two consecutive samples at the maximum signal frequency. (Refer to Figure 39 for the suggested input circuit.) When the converter goes into hold mode, the input impedance is greater than 1 GΩ. Care must be taken regarding the absolute analog input voltage. To maintain the linearity of the converter, both −IN and +IN inputs should be within the limits specified. Outside of these ranges, the converter’s linearity may not meet specifications. Care should be taken to ensure that +IN and −IN see the same impedance to the respective sources. (For example, both +IN and −IN are connected to a decoupling capacitor through a 21-Ω resistor as shown in Figure 39.) If this is not observed, the two inputs could have different settling times. This may result in an offset error, gain error, or linearity error which changes with temperature and input voltage. RECOMMENDED OPERATIONAL AMPLIFIERS It is recommended to use the THS4031 or THS4211 op amps for the analog input. All of the performance figures in this data sheet are measured using the THS4031. Refer to Figure 39 for more information. 20  www.ti.com SLAS410 − DECEMBER 2003 DIGITAL INTERFACE TIMING AND CONTROL Refer to the SAMPLING AND CONVERSION START section and the CONVERSION ABORT section. READING DATA The ADS7891 outputs full parallel data in straight binary format as shown in Table 1. The parallel output is active when CS and RD are both low. There is a minimal quiet sampling period requirement around the falling edge of CONVST as stated in the timing requirements section. Data reads or bus three-state operations should not be attempted within this period. Any other combination of CS and RD three-states the parallel output. Refer to Table 1 for ideal output codes. Table 1. Ideal Input Voltages and Output Codes(1) DESCRIPTION Full scale Midscale Midscale − 1 LSB ANALOG VALUE BINARY CODE HEX CODE Vref − 1 LSB Vref/2 11 1111 1111 1111 3FFF 10 0000 0000 0000 2000 Vref/2 − 1 LSB 0V 01 1111 1111 1111 1FFF Zero 00 0000 0000 0000 0000 (1) Full-scale range = Vref and least significant bit (LSB) = Vref/16384 The output data appears as a full 14-bit word (D13−D0) on pins DB13 – DB0 (MSB−LSB) if BYTE is low. READING THE DATA IN BYTE MODE The result can also be read on an 8-bit bus for convenience by using pins DB13−DB6. In this case two reads are necessary; the first as before, leaving BYTE low and reading the 8 most significant bits on pins DB13−DB6, and then bringing BYTE high. When BYTE is high, the lower bits (D5−D0) followed by all zeros are on pins DB13 − DB6 (refer to Table 2). These multi-word read operations can be performed with multiple active RD signals (toggling) or with RD tied low for simplicity. Table 2. Conversion Data Read Out DATA READ OUT BYTE DB13 − DB6 DB5 − DB0 High D5 − D0, 00 All zeroes Low D13 − D6 D5 − D0 Also refer to the DATA READ and DEVICE OPERATION AND DATA READ IN BACK-TO-BACK CONVERSION sections for more details. Reset Refer to the POWERDOWN/RESET section for the device reset sequence. It is recommended to reset the device after power on. A reset can be issued once the power has reached 95% of its final value. PWD/RST is an asynchronous active low input signal. A current conversion is aborted no later than 45 ns after the converter is in the reset mode. In addition, the device outputs a 3F80 code to indicate a reset condition. The converter returns back to normal operation mode immediately after the PWD/RST input is brought high. Data is not valid for the first four conversions after a device reset. Powerdown Refer to the POWERDOWN/RESET section for the device powerdown sequence. The device enters powerdown mode if a PWD/RST low duration is extended for more than a period of tw7. The converter goes back to normal operation mode no later than a period of td13 after the PWD/RST input is brought high. 21  www.ti.com SLAS410 − DECEMBER 2003 After this period, normal conversion and sampling operation can be started as discussed in previous sections. Data is not valid for the first four conversions after a device reset. Nap Mode Refer to the NAP MODE section in the DESCRIPTION AND TIMING DIAGRAMS section for information. 22  www.ti.com SLAS410 − DECEMBER 2003 APPLICATION INFORMATION LAYOUT For optimum performance, care should be taken with the physical layout of the ADS7891 circuitry. As the ADS7891 offers single-supply operation, it is often used in close proximity with digital logic, micro-controllers, microprocessors, and digital signal processors. The more digital logic present in the design and the higher the switching speed, the more difficult it is to achieve acceptable performance from the converter. The basic SAR architecture is sensitive to glitches or sudden changes on the power supply, reference, ground connections, and digital inputs that occur just prior to the end of sampling (within quiet sampling time) and just prior to latching the output of the analog comparator during the conversion phase. Thus, driving any single conversion for an n-bit SAR converter, there are n+1 windows in which large external transient voltages can affect the conversion result. Such glitches might originate from switching power supplies, nearby digital logic, or high power devices. The degree of error in the digital output depends on the reference voltage, layout, and the exact timing of the external event. On average, the ADS7891 draws very little current from an external reference as the reference voltage is internally buffered. If the reference voltage is external and originates from an op amp, make sure that it can drive the bypass capacitor or capacitors without oscillation. A 0.1-µF bypass capacitor and 1-µF storage capacitor are recommended from REFIN (pin 1) directly to REFM (pin 48). The AGND and BDGND pins should be connected to a clean ground point. In all cases, this should be the analog ground. Avoid connections which are too close to the grounding point of a micro-controller or digital signal processor. If required, run a ground trace directly from the converter to the power supply entry point. The ideal layout consists of an analog ground plane dedicated to the converter and associated analog circuitry. As with the AGND connections, +VA should be connected to a 5-V power supply plane that is separate from the connection for +VBD and digital logic until they are connected at the power entry point onto the PCB. Power to the ADS7891 should be clean and well bypassed. A 0.1-µF ceramic bypass capacitor should be placed as close to the device as possible. See Table 3 for the placement of capacitor. In addition to a 0.1-µF capacitor, a 1-µF capacitor is recommended. In some situations, additional bypassing may be required, such as a 100-µF electrolytic capacitor or even a Pi filter made up of inductors and capacitors, all designed to essentially low-pass filter the 5-V supply, removing the high frequency noise. Table 3. Power Supply Decoupling Capacitor Placement POWER SUPPLY PLANE CONVERTER ANALOG SIDE SUPPLY PINS Pairs of pins that require a shortest path to decoupling capacitors (4,5), (9,8), (10,11), (13, 15), (43, 44) (46, 45) Pins that require no decoupling 14, 12 Analog 5 V CONVERTER DIGITAL SIDE (24, 25), (34, 35) +VA 0.1 µF 1 µF ADS7891 AGND AGND 0.1 µF REFOUT External Reference in REFIN 1 µF 0.1 µF REFM AGND 21 Ω Analog Input Circuit 21 Ω +IN −IN Figure 37. Using External Reference 23  www.ti.com SLAS410 − DECEMBER 2003 Analog 5 V +VA 0.1 µF 1 µF ADS7891 AGND AGND REFOUT 0.1 µF 1 µF REFIN REFM AGND 21 Ω Analog Input Circuit 21 Ω +IN −IN Figure 38. Using Internal Reference 130 pF 1 kΩ Bipolar Signal Input (+1.25 Vp−p) 2.5 V DC 1 kΩ _ 100 Ω 3 kΩ 12 Ω 21 Ω THS4031 + 1 kΩ 21 Ω 680 pF 1 nF AGND AGND Figure 39. Typical Analog Input Circuit GPIO CS GPIO BYTE GPIO CONVST Microcontroller ADS7891 P[7:0] DB[13:6] RD RD INT BUSY Figure 40. Interfacing With Microcontroller 24 +IN ADS7891 −IN PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) ADS7891IPFBR ACTIVE TQFP PFB 48 1000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS7891I ADS7891IPFBT ACTIVE TQFP PFB 48 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS7891I (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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