CSD85302LT

Sample & Buy Product Folder Support & Community Tools & Software Technical Documents CSD85302L SLPS561 – NOVEMBER 2015 CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET 1 Features • • • • • • 1 Text added for spacing Common Drain Configuration Low On-Resistance Small Footprint of 1.35 mm × 1.35 mm Pb Free and Halogen Free RoHS Compliant ESD HBM Protection >2.5 kV Product Summary TA = 25°C 20 V Qg Gate Charge Total (4.5 V) 6 nC Qgd Gate Charge Gate-to-Drain RS1S2(on) 1.4 nC VGS(th) This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices. 20 mΩ 18.7 Threshold Voltage mΩ 0.9 V DEVICE QTY MEDIA PACKAGE SHIP CSD85302L 3000 CSD85302LT 250 7-Inch Reel 1.35 × 1.35 mm Land Grid Array (LGA) Package Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C Top View S1 S2 mΩ Ordering Information(1) 3 Description G1 29 Source-to-Source On-Resistance VGS = 4.5 V VGS = 6.5 V USB Type-C/PD Battery Management Battery Protection UNIT Source-to-Source Voltage VGS = 2.5 V 2 Applications • • • TYPICAL VALUE VS1S2 G2 VALUE UNIT VS1S2 Source-to-Source Voltage 20 V VGS Gate-to-Source Voltage ±10 V IS Continuous Source Current(1) 7 A ISM Pulsed Source Current(2) 37 A PD Power Dissipation(1) 1.7 W V(ESD) Human Body Model (HBM) 2.5 kV TJ, Tstg Operating Junction and Storage Temperature Range –55 to 150 °C (1) Typical RθJA = 75°C/W when mounted on a 1 inch2, 2 oz. Cu pad on a 0.06 inch thick FR4 PCB. (2) Max RθJA = 90°C/W, pulse duration ≤100 μs, duty cycle ≤1% Configuration Source 1 Source 2 Gate 1 Gate 2 . . RDS(on) vs VGS Gate Charge 8 TC = 25°C, I S = 2 A TC = 125°C, I S = 2 A 54 VGS - Gate-to-Source Voltage (V) RS1S2(on) - On-State Resistance (m:) 60 48 42 36 30 24 18 12 6 0 IS1S2 = 2 A 7 VS1S2 = 10 V 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) 9 10 D007 0 2 4 6 8 Qg - Gate Charge (nC) 10 12 D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD85302L SLPS561 – NOVEMBER 2015 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 6.1 6.2 6.3 6.4 1 1 1 2 3 7 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 7 7 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 7.2 7.3 7.4 Device and Documentation Support.................... 7 Community Resources.............................................. Trademarks ............................................................... Electrostatic Discharge Caution ................................ Glossary .................................................................... Package Dimensions ................................................ 8 Recommended PCB Pattern..................................... 9 Recommended Stencil Pattern ................................. 9 Q3A Tape and Reel Information ............................. 10 4 Revision History 2 DATE REVISION NOTES November 2015 * Initial release. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD85302L CSD85302L www.ti.com SLPS561 – NOVEMBER 2015 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVS1S2 Source-to-source voltage VGS = 0 V, IS = 250 μA IS1S2 Source-to-source leakage current VGS = 0 V, VS1S2 = 16 V IGSS Gate-to-source leakage current VS1S2 = 0 V, VGS = 6 V VGS(th) Gate-to-source threshold voltage 20 V VS1S2 = 0 V, VGS = 10V RS1S2(on) gfs VS1S2 = VGS, IS = 250 μA Source-to-source on-resistance Transconductance 1 μA 0.5 µA 4 µA 0.68 0.9 1.3 V VGS = 2.5 V, IS = 2 A 20 29 36 mΩ VGS = 4.5 V, IS = 2 A 14 20 24 mΩ VGS = 6.5 V, IS = 2 A 13 18.7 22.5 mΩ VS1S2 = 2 V, IS = 2 A 19 S DYNAMIC CHARACTERISTICS (1) Ciss Input capacitance Coss Output capacitance 718 933 pF 92 120 Crss pF Reverse transfer capacitance 61 79 pF Qg Gate charge total (4.5 V) 6.0 7.8 nC Qgd Gate charge gate-to-drain 1.4 nC Qgs Gate charge gate-to-source 1.2 nC Qg(th) Gate charge at Vth 0.6 nC Qoss Output charge 2.3 nC td(on) Turn-on delay time 37 ns tr Rise time 54 ns td(off) Turn-off delay time 173 ns tf Fall time 99 ns (1) VGS = 0 V, VS1S2 = 10 V, ƒ = 1 MHz VS1S2 = 10 V, IS = 2 A VS1S2 = 10 V, VGS = 0 V VS1S2 = 10 V, VGS = 4.5 V, IS1S2 = 2 A, RG = 0 Ω Charge and timing values specified are per single FET. 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC RθJA (1) (2) Junction-to-ambient thermal resistance (1) Junction-to-ambient thermal resistance (2) 2 MIN TYP MAX UNIT 75 °C/W 175 °C/W 2 Device mounted on FR4 material with 1 inch (6.45 cm ), 2 oz. (0.071 mm thick) Cu. Device mounted on FR4 material with minimum Cu mounting area. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD85302L 3 CSD85302L SLPS561 – NOVEMBER 2015 www.ti.com 5.3 Typical MOSFET Characteristics (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance 20 18 IS1S2 - Source-to-Source Current (A) IS1S2 - Source-to-Source Current (A) 20 16 14 12 10 8 6 4 VG1S1 = 2.5 V VG1S1 = 4.5 V VG1S1 = 6.5 V 2 0 TC = 125°C TC = 25°C TC = -55°C 16 12 8 4 0 0 0.1 0.2 0.3 0.4 0.5 0.6 VS1S2 - Source-to-Source Voltage (V) 0.7 0.8 0 D002 VG2S2 = 9 V 1 1.5 2 VGS - Gate-to-Source Voltage (V) VS1S2 = 5 V Figure 2. Saturation Characteristics 4 0.5 Submit Documentation Feedback 2.5 D003 VG2S2 = 9 V Figure 3. Transfer Characteristics Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD85302L CSD85302L www.ti.com SLPS561 – NOVEMBER 2015 Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 10000 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 7 6 C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) 8 5 4 3 2 1000 100 1 10 0 0 2 4 6 8 Qg - Gate Charge (nC) IS = 2 A 10 0 12 4 8 12 16 VS1S2 - Source-to-Source Voltage (V) D004 Figure 5. Capacitance 60 RS1S2(on) - On-State Resistance (m:) 1.2 VGS(th) - Threshold Voltage (V) D005 VS1S2 = 6 V Figure 4. Gate Charge 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 -75 20 TC = 25°C, I S = 2 A TC = 125°C, I S = 2 A 54 48 42 36 30 24 18 12 6 0 -50 -25 0 25 50 75 100 TC - Case Temperature (°C) 125 150 0 175 1 2 D006 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) 9 10 D007 IS = 250 µA Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Source-to-Source Resistance vs Gate-to-Source Voltage 1.4 100 VGS = 2.5 V VGS = 6.5 V IS1S2 - Source-to-Source Current (A) Normalized On-State Resistance 1.5 1.3 1.2 1.1 1 0.9 0.8 0.7 -75 -50 -25 0 25 50 75 100 TC - Case Temperature (qC) 125 150 175 10 1 0.1 DC 10 s 0.01 0.01 1s 100 ms 10 ms 1 ms 0.1 1 10 VS1S2 - Source-to-Source Voltage (V) D008 IS = 2 A 100 D009 Single pulse, max RθJA = 90°C/W Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Maximum Safe Operating Area Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD85302L 5 CSD85302L SLPS561 – NOVEMBER 2015 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) IS1S2 - Source-to-Source Current (A) 8 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 175 D010 Typical RθJA = 75°C/W Figure 10. Maximum Source Current vs Temperature 6 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD85302L CSD85302L www.ti.com SLPS561 – NOVEMBER 2015 6 Device and Documentation Support 6.1 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 6.2 Trademarks NexFET, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 6.3 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.4 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD85302L 7 CSD85302L SLPS561 – NOVEMBER 2015 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 Package Dimensions 1.35 1.27 A B PIN 1 INDEX AREA 1.35 1.27 C 0.22 MAX SEATING PLANE 2X 0.66 2X 0.25 2X 0.41 2X 0.26 0.24 0.015 C B A 3 2 2X 0.33 2X 0.74 2X 0.41 2X 0.42 0.40 1 4 (R0.08) TYP 2X 0.58 0.56 0.015 C A B Pin Configuration PIN NUMBER NAME 1 G1 2 S2 3 G2 4 S1 Text added for spacing 1. All linear dimensions are in millimeters. 8 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD85302L CSD85302L www.ti.com SLPS561 – NOVEMBER 2015 7.2 Recommended PCB Pattern METAL UNDER SOLDER MASK 2X (0.57) 0.05 MIN ALL AROUND SOLDER MASK OPENING 1 4 2X (0.41) 2X (0.41) PKG 2X (0.74) 2X (0.33) 2 3 (R0.05) TYP 2X ( 0.25) 2X (0.25) 2X (0.41) PKG 2X (0.66) Land Pattern Example Solder Mask Defined Scale: 50X 7.3 Recommended Stencil Pattern SOLDER MASK OPENING TYP 2X (0.51) (R0.05) TYP 1 4 2X (0.37) 2X (0.41) 2X (0.74) PKG 2X (0.33) 2 3 METAL ALL AROUND TYP 2X (0.25) 2X ( 0.25) 2X (0.41) PKG 2X (0.66) Solder Paste Example Based on 0.1 mm thick stencil Pads 2 and 4: 81% printed on solder coverage by area Scale: 80X 1. All linear dimensions are in millimeters. 2. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD85302L 9 CSD85302L SLPS561 – NOVEMBER 2015 www.ti.com 7.4 Q3A Tape and Reel Information 1.42 ±0.05 Pin 1 Orientation W +0.30 ±0.10 8.00 B0 ±0.05 1.42 A0 P1 Cavity 4.00 ±0.10 2º max All Measurements in Millimeters (mm) 0.29 ±0.05 K0 Notes: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2 2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm 3. Material: black static-dissipative polystyrene 4. MSL1 260°C (IR and convection) PbF-reflow compatible 10 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD85302L PACKAGE OPTION ADDENDUM www.ti.com 11-Jan-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) CSD85302L ACTIVE PICOSTAR YME 4 3000 RoHS & Green NIAU Level-1-260C-UNLIM -55 to 150 85302 CSD85302LT ACTIVE PICOSTAR YME 4 250 RoHS & Green NIAU Level-1-260C-UNLIM -55 to 150 85302 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of