LM3046M/NOPB

LM3045/LM3046/LM3086 Transistor Arrays General Description Features The LM3045, LM3046 and LM3086 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low power system in the DC through VHF range. They may be used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. The LM3045 is supplied in a 14-lead cavity dualin-line package rated for operation over the full military temperature range. The LM3046 and LM3086 are electrically identical to the LM3045 but are supplied in a 14-lead molded dual-in-line package for applications requiring only a limited temperature range. Y Y Y Y Y Y Two matched pairs of transistors VBE matched g 5 mV Input offset current 2 mA max at IC e 1 mA Five general purpose monolithic transistors Operation from DC to 120 MHz Wide operating current range Low noise figure 3.2 dB typ at 1 kHz Full military b 55§ C to a 125§ C temperature range (LM3045) Applications Y Y Y General use in all types of signal processing systems operating anywhere in the frequency range from DC to VHF Custom designed differential amplifiers Temperature compensated amplifiers Schematic and Connection Diagram Dual-In-Line and Small Outline Packages TL/H/7950 – 1 Top View Order Number LM3045J, LM3046M, LM3046N or LM3086N See NS Package Number J14A, M14A or N14A C1995 National Semiconductor Corporation TL/H/7950 RRD-B30M115/Printed in U. S. A. LM3045/LM3046/LM3086 Transistor Arrays December 1994 Absolute Maximum Ratings (TA e 25§ C) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. LM3045 LM3046/LM3086 Each Total Each Total Units Transistor Package Transistor Package Power Dissipation: TA e 25§ C 300 750 300 750 mW TA e 25§ C to 55§ C 300 750 mW TA l 55§ C Derate at 6.67 mW/§ C TA e 25§ C to 75§ C 300 750 mW TA l 75§ C Derate at 8 mW/§ C Collector to Emitter Voltage, VCEO 15 15 V Collector to Base Voltage, VCBO 20 20 V Collector to Substrate Voltage, VCIO (Note 1) 20 20 V 5 5 V Emitter to Base Voltage, VEBO 50 50 mA Collector Current, IC b 55§ C to a 125§ C b 40§ C to a 85§ C Operating Temperature Range b 65§ C to a 150§ C b 65§ C to a 85§ C Storage Temperature Range Soldering Information Dual-In-Line Package Soldering (10 Sec.) 260§ C 260§ C Small Outline Package Vapor Phase (60 Seconds) 215§ C Infrared (15 Seconds) 220§ C See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount devices. Electrical Characteristics (TA e 25§ C unless otherwise specified) Parameter Conditions Limits Limits LM3045, LM3046 LM3086 Min Typ Max Min Typ Units Max Collector to Base Breakdown Voltage (V(BR)CBO) IC e 10 mA, IE e 0 20 60 20 60 V Collector to Emitter Breakdown Voltage (V(BR)CEO) IC e 1 mA, IB e 0 15 24 15 24 V Collector to Substrate Breakdown Voltage (V(BR)CIO) IC e 10 mA, ICI e 0 20 60 20 60 V Emitter to Base Breakdown Voltage (V(BR)EBO) IE 10 mA, IC e 0 5 Collector Cutoff Current (ICBO) VCB e 10V, IE e 0 VCE e 10V, IB e 0 Collector Cutoff Current (ICEO) Static Forward Current Transfer Ratio (Static Beta) (hFE) VCE e 3V Ð IC e 10 mA IC e 1 mA IC e 10 mA Input Offset Current for Matched Pair Q1 and Q2 lIO1 b IIO2l VCE e 3V, IC e 1 mA Base to Emitter Voltage (VBE) VCE e 3V I e 1 mA Ð IEE e 10 mA Magnitude of Input Offset Voltage for Differential Pair lVBE1 b VBE2l VCE e 3V, IC e 1 mA Magnitude of Input Offset Voltage for Isolated Transistors lVBE3 b VBE4l, lVBE4 b VBE5l, lVBE5 b VBE3l VCE e 3V, IC e 1 mA Temperature Coefficient of Base to Emitter Voltage DVBE DT Collector to Emitter Saturation Voltage (VCE(SAT)) VCE e 3V, IC e 1 mA # J Temperature Coefficient of Input Offset Voltage DV10 DT # J IB e 1 mA, IC e 10 mA 7 0.002 5 40 7 0.002 0.5 100 40 nA 5 mA 100 100 40 54 0.3 V 100 100 54 2 mA 0.715 0.715 0.800 0.800 V 0.45 5 mV 0.45 5 mV b 1.9 b 1.9 mV/§ C 0.23 0.23 V VCE e 3V, IC e 1 mA 1.1 mV/§ C Note 1: The collector of each transistor of the LM3045, LM3046, and LM3086 is isolated from the substrate by an integral diode. The substrate (terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. 2 Electrical Characteristics (Continued) Parameter Low Frequency Noise Figure (NF) Conditions Min f e 1 kHz, VCE e 3V, IC e 100 mA, RS e 1 kX Typ Max 3.25 Units dB LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS Forward Current Transfer Ratio (hfe) f e 1 kHz, VCE e 3V, IC e 1 mA 110 (LM3045, LM3046) (LM3086) Short Circuit Input Impednace (hie) 3.5 kX Open Circuit Output Impedance (hoe) 15.6 mmho 1.8 x 10b4 Open Circuit Reverse Voltage Transfer Ratio (hre) ADMITTANCE CHARACTERISTICS Forward Transfer Admittance (Yfe) Input Admittance (Yie) f e 1 MHz, VCE e 3V, IC e 1 mA 31 b j 1.5 0.3 a J 0.04 Output Admittance (Yoe) 0.001 a j 0.03 Reverse Transfer Admittance (Yre) See Curve Gain Bandwidth Product (fT) VCE e 3V, IC e 3 mA 300 Emitter to Base Capacitance (CEB) VEB e 3V, IE e 0 550 0.6 pF Collector to Base Capacitance (CCB) VCB e 3V, IC e 0 0.58 pF Collector to Substrate Capacitance (CCI) VCS e 3V, IC e 0 2.8 pF Typical Performance Characteristics Typical Collector To Base Cutoff Current vs Ambient Temperature for Each Transistor Typical Collector To Emitter Cutoff Current vs Ambient Temperature for Each Transistor Typical Static Forward Current-Transfer Ratio and Beta Ratio for Transistors Q1 and Q2 vs Emitter Current TL/H/7950 – 2 Typical Static Base To Emitter Voltage Characteristic and Input Offset Voltage for Differential Pair and Paired Isolated Transistors vs Emitter Current Typical Input Offset Current for Matched Transistor Pair Q1 Q2 vs Collector Current TL/H/7950 – 3 3 Typical Performance Characteristics Typical Base To Emitter Voltage Characteristic for Each Transistor vs Ambient Temperature (Continued) Typical Input Offset Voltage Characteristics for Differential Pair and Paired Isolated Transistors vs Ambient Temperature Typical Noise Figure vs Collector Current Typical Noise Figure vs Collector Current Typical Normalized Forward Current Transfer Ratio, Short Circuit Input Impedance, Open Circuit Output Impedance, and Open Circuit Reverse Voltage Transfer Ratio vs Collector Current TL/H/7950 – 4 Typical Noise Figure vs Collector Current TL/H/7950 – 5 Typical Forward Transfer Admittance vs Frequency Typical Input Admittance vs Frequency Typical Output Admittance vs Frequency TL/H/7950 – 6 4 Typical Performance Characteristics Typical Reverse Transfer Admittance vs Frequency (Continued) Typical Gain-Bandwidth Product vs Collector Current TL/H/7950 – 7 Physical Dimensions inches (millimeters) Ceramic Dual-In-Line Package (J) Order Number LM3045J NS Package Number J14A 5 LM3045/LM3046/LM3086 Transistor Arrays Physical Dimensions inches (millimeters) (Continued) Molded Small Outline Package (M) Order Number LM3046M NS Package Number M14A Molded Dual-In-Line Package (N) Order Number LM3046N or LM3086N NS Package Number N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. 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