LM394CH/NOPB

LM194,LM394 LM194 LM394 Supermatch Pair Literature Number: SNLS385A LM194/LM394 Supermatch Pair General Description matched transistor pair. In many cases, trimming can be eliminated entirely, improving reliability and decreasing costs. Additionally, the low noise and high gain make this device attractive even where matching is not critical. The LM194 and LM394/LM394B/LM394C are available in an isolated header 6-lead TO-5 metal can package. The LM394/LM394B/LM394C are available in an 8-pin plastic dual-in-line package. The LM194 is identical to the LM394 except for tighter electrical specifications and wider temperature range. Y Y Y Y e Features Emitter-base voltage matched to 50 mV Offset voltage drift less than 0.1 mV/§ C Current gain (hFE) matched to 2% Common-mode rejection ratio greater than 120 dB Parameters guaranteed over 1 mA to 1 mA collector current Extremely low noise Superior logging characteristics compared to conventional pairs Plug-in replacement for presently available devices et The LM194 and LM394 are junction isolated ultra wellmatched monolithic NPN transistor pairs with an order of magnitude improvement in matching over conventional transistor pairs. This was accomplished by advanced linear processing and a unique new device structure. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic emitter and base resistances are much lower than presently available pairs, either monolithic or discrete, giving extremely low noise and theoretical operation over a wide current range. Most parameters are guaranteed over a current range of 1 mA to 1 mA and 0V up to 40V collector-base voltage, ensuring superior performance in nearly all applications. To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitterbase junction of each transistor. These prevent degradation due to reverse biased emitter currentÐthe most common cause of field failures in matched devices. The parasitic isolation junction formed by the diodes also clamps the substrate region to the most negative emitter to ensure complete isolation between devices. The LM194 and LM394 will provide a considerable improvement in performance in most applications requiring a closely Y Y Y bs ol Y Typical Applications Low Cost Accurate Squaring Circuit IOUT e 10b6 (VIN)2 O Low Cost Accurate Square Root Circuit IOUT e 10b5. 010 VIN TL/H/9241 – 2 TL/H/9241 – 1 *Trim for full scale accuracy C1995 National Semiconductor Corporation TL/H/9241 RRD-B30M115/Printed in U. S. A. LM194/LM394 Supermatch Pair December 1994 Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. (Note 4) Collector Current 20 mA Collector-Emitter Voltage VMAX Collector-Emitter Voltage LM394C Collector-Base Voltage LM394C Collector-Substrate Voltage LM394C Collector-Collector Voltage LM394C Base-Emitter Current g 10 mA Power Dissipation 500 mW Junction Temperature LM194 LM394/LM394B/LM394C b 55§ C to a 125§ C b 25§ C to a 85§ C b 65§ C to a 150§ C Storage Temperature Range Soldering Information Metal Can Package (10 sec.) Dual-In-Line Package (10 sec.) Small Outline Package Vapor Phase (60 sec.) Infrared (15 sec.) 35V 20V 35V 20V 35V 20V 35V 20V 260§ C 260§ C 215§ C 220§ C See AN-450 ‘‘Surface Mounting and their Effects on Product Reliability’’ for other methods of soldering surface mount devices. Electrical Characteristics (TJ e 25§ C) Current Gain (hFE) Current Gain Match, (hFE Match) 100 [DIB] [hFE(MIN)] e VCB e 0V to VMAX (Note 1) IC e 1 mA IC e 100 mA IC e 10 mA IC e 1 mA VCB e 0V to VMAX IC e 10 mA to 1 mA IC e 1 mA Typ 350 350 300 200 700 550 450 300 LM394 Max Min 300 250 200 150 Typ LM394B/394C Max 700 550 450 300 Min Typ 225 200 150 100 500 400 300 200 0.5 1.0 2 0.5 1.0 4 bs ol IC Min Units e LM194 Conditions Max et Parameter 1.0 2.0 5 % % VCB e 0 IC e 1 mA to 1 mA Change in Emitter-Base Offset Voltage vs Collector-Base Voltage (CMRR) (Note 1) IC e 1 mA to 1 mA, VCB e 0V to VMAX Change in Emitter-Base Offset Voltage vs Collector Current VCB e 0V, IC e 1 mA to 0.3 mA Emitter-Base Offset Voltage Temperature Drift IC e 10 mA to 1 mA (Note 2) IC1 e IC2 VOS Trimmed to 0 at 25§ C Logging Conformity IC e 3 nA to 300 mA, VCB e 0, (Note 3) 150 Collector-Base Leakage VCB e VMAX 0.05 0.25 0.05 0.5 0.05 0.5 nA Collector-Collector Leakage VCC e VMAX 0.1 2.0 0.1 5.0 0.1 5.0 nA Input Voltage Noise IC e 100 mA, VCB e 0V, f e 100 Hz to 100 kHz 1.8 1.8 1.8 nV/0Hz Collector to Emitter Saturation Voltage IC e 1 mA, IB e 10 mA IC e 1 mA, IB e 100 mA 0.2 0.1 0.2 0.1 0.2 0.1 V V O Emitter-Base Offset Voltage 25 100 25 150 50 200 mV 10 25 10 50 10 100 mV 5 25 5 50 5 50 mV 0.08 0.3 0.08 1.0 0.2 1.5 mV/§ C 0.03 0.1 0.03 0.3 0.03 0.5 mV/§ C 150 150 mV Note 1: Collector-base voltage is swept from 0 to VMAX at a collector current of 1 mA, 10 mA, 100 mA, and 1 mA. Note 2: Offset voltage drift with VOS e 0 at TA e 25§ C is valid only when the ratio of IC1 to IC2 is adjusted to give the initial zero offset. This ratio must be held to within 0.003% over the entire temperature range. Measurements taken at a 25§ C and temperature extremes. Note 3: Logging conformity is measured by computing the best fit to a true exponential and expressing the error as a base-emitter voltage deviation. Note 4: Refer to RETS194X drawing of military LM194H version for specifications. 2 Typical Applications (Continued) Fast, Accurate Logging Amplifier, VIN e 10V to 0.1 mV or IIN e 1 mA to 10 nA TL/H/9241 – 3 *1 kX ( g 1%) at 25§ C, a 3500 ppm/§ C. Available from Vishay Ultronix, Grand Junction, CO, Q81 Series. #V J VIN REF e VOUT e b log10 O bs ol et Voltage Controlled Variable Gain Amplifier TL/H/9241 – 4 *R8–R10 and D2 provide a temperature independent gain control. G e b 336 V1 (dB) Distortion k 0.1% Bandwidth l 1 MHz 100 dB gain range 3 Typical Applications (Continued) e Precision Low Drift Operational Amplifier Common-mode range 10V IBIAS 25 nA IOS 0.5 nA et VOS (untrimmed) 125 mV (DVOS/DT) 0.2 mV/C CMRR 120 dB AVOL 2,500,000 *C C 200 pF for unity gain 30 pF for AV 10 5 pF for AV 100 0 pF for AV 1000 TL/H/9241 – 5 bs ol C C O High Accuracy One Quadrant Multiplier/Divider TL/H/9241 – 6 VOUT e (X) (Y) ; positive inputs only. (Z) *Typical linearity 0.1% 4 Typical Applications (Continued) bs ol et e High Performance Instrumentation Amplifier *Gain e 106 RS TL/H/9241 – 7 Performance Characteristics O Linearity of Gain ( g 10V Output) Common-Mode Rejection Ratio (60 Hz) Common-Mode Rejection Ratio (1 kHz) Power Supply Rejection Ratio a Supply b Supply Bandwidth ( b 3 dB) Slew Rate Offset Voltage Drift** Common-Mode Input Resistance Differential Input Resistance G e 10,000 G e 1,000 G e 100 G e 10 s 0.01 s 0.01 s 0.02 s 0.05 t 120 t 120 t 110 t 90 t 110 t 110 t 90 t 70 l 110 l 110 50 0.3 s 0.25 l 109 l 3 x 108 Input Referred Noise (100 Hz s f s 10 kHz) 5 Input Bias Current Input Offset Current Common-Mode Range Output Swing (RL e 10 kX) **Assumes s 5 ppm/§ C tracking of resistors 75 1.5 g 11 g 13 5 l 110 l 110 l 110 l 110 l 90 l 70 % dB dB dB dB 50 50 50 kHz 0.3 0.3 0.3 V/ms s 0.4 s 10 mV/§ C 2 l 109 l 109 l 109 X l 3 x 108 l 3 x 108 l 3 x 108 X nV 6 12 70 0Hz 75 75 75 nA 1.5 1.5 1.5 nA g 11 g 11 g 10 V g 13 g 13 g 13 V Typical Performance Characteristics DC Current Gain vs Temperature Unity Gain Frequency (ft) vs Collector Current Offset Voltage Drift vs Initial Offset Voltage Base-Emitter On Voltage vs Collector Current Small Signal Input Resistance (hie) vs Collector Current Small Signal Output Conductance vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current Input Voltage Noise vs Frequency Base Current Noise vs Frequency Noise Figure vs Collector Current Collector to Collector Capacitance vs Reverse Bias Voltage O bs ol et e Small Signal Current Gain vs Collector Current TL/H/9241 – 8 6 Typical Performance Characteristics (Continued) Emitter-Base Capacitance vs Reverse Bias Voltage Collector-Base Capacitance vs Reverse Bias Voltage Collector-Base Leakage vs Temperature Collector to Collector Leakage vs Temperature Offset Voltage Long Term Stability at High Temperature et e Collector to Collector Capacitance vs Collector-Substrate Voltage bs ol Emitter-Base Log Conformity TL/H/9241 – 10 O Low Frequency Noise of Differential Pair* TL/H/9241 – 11 *Unit must be in still air environment so that differential lead temperature is held to less than 0.0003§ C. 7 TL/H/9241 – 9 Connection Diagrams Dual-In-Line and Small Outline Packages Metal Can Package TL/H/9241 – 12 TL/H/9241 – 13 Top View Top View Order Number LM194H/883*, LM394H, LM394BH or LM394CH See NS Package Number H06C O bs ol et e Order Number LM394N or LM394CN See NS Package Number N08E *Available per SMD Ý5962-8777701 8 et e Physical Dimensions inches (millimeters) O bs ol Metal Can Package (H) Order Number LM194H/883, LM394H, LM394BH or LM394CH NS Package Number H06C 9 e et LM194/LM394 Supermatch Pair Physical Dimensions inches (millimeters) (Continued) bs ol Molded Dual-In-Line Package (N) Order Number LM394CN or LM394N NS Package Number N08E LIFE SUPPORT POLICY O NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. 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