LM394CN

LM194 LM394 Supermatch Pair December 1994 LM194 LM394 Supermatch Pair General Description The LM194 and LM394 are junction isolated ultra wellmatched monolithic NPN transistor pairs with an order of magnitude improvement in matching over conventional transistor pairs This was accomplished by advanced linear processing and a unique new device structure Electrical characteristics of these devices such as drift versus initial offset voltage noise and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor Extrinsic emitter and base resistances are much lower than presently available pairs either monolithic or discrete giving extremely low noise and theoretical operation over a wide current range Most parameters are guaranteed over a current range of 1 mA to 1 mA and 0V up to 40V collector-base voltage ensuring superior performance in nearly all applications To guarantee long term stability of matching parameters internal clamp diodes have been added across the emitterbase junction of each transistor These prevent degradation due to reverse biased emitter current the most common cause of field failures in matched devices The parasitic isolation junction formed by the diodes also clamps the substrate region to the most negative emitter to ensure complete isolation between devices The LM194 and LM394 will provide a considerable improvement in performance in most applications requiring a closely matched transistor pair In many cases trimming can be eliminated entirely improving reliability and decreasing costs Additionally the low noise and high gain make this device attractive even where matching is not critical The LM194 and LM394 LM394B LM394C are available in an isolated header 6-lead TO-5 metal can package The LM394 LM394B LM394C are available in an 8-pin plastic dual-in-line package The LM194 is identical to the LM394 except for tighter electrical specifications and wider temperature range Features Y Y Y Y Y Y Y Y Emitter-base voltage matched to 50 mV Offset voltage drift less than 0 1 mV C Current gain (hFE) matched to 2% Common-mode rejection ratio greater than 120 dB Parameters guaranteed over 1 mA to 1 mA collector current Extremely low noise Superior logging characteristics compared to conventional pairs Plug-in replacement for presently available devices Typical Applications Low Cost Accurate Square Root Circuit IOUT e 10b5 010 VIN Low Cost Accurate Squaring Circuit IOUT e 10b6 (VIN)2 TL H 9241 – 2 TL H 9241 – 1 Trim for full scale accuracy C1995 National Semiconductor Corporation TL H 9241 RRD-B30M115 Printed in U S A Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications (Note 4) Collector Current 20 mA Collector-Emitter Voltage VMAX Collector-Emitter Voltage LM394C Collector-Base Voltage LM394C Collector-Substrate Voltage LM394C Collector-Collector Voltage LM394C 35V 20V 35V 20V 35V 20V 35V 20V Base-Emitter Current Power Dissipation Junction Temperature LM194 LM394 LM394B LM394C Storage Temperature Range Soldering Information Metal Can Package (10 sec ) Dual-In-Line Package (10 sec ) Small Outline Package Vapor Phase (60 sec ) Infrared (15 sec ) g 10 mA 500 mW b 55 C to a 125 C b 25 C to a 85 C b 65 C to a 150 C 260 C 260 C 215 C 220 C See AN-450 ‘‘Surface Mounting and their Effects on Product Reliability’’ for other methods of soldering surface mount devices Electrical Characteristics (TJ e 25 C) Parameter Current Gain (hFE) Conditions Min VCB e 0V to VMAX (Note 1) IC e 1 mA IC e 100 mA IC e 10 mA IC e 1 m A VCB e 0V to VMAX IC e 10 mA to 1 mA IC e 1 m A VCB e 0 IC e 1 mA to 1 mA (Note 1) IC e 1 mA to 1 mA VCB e 0V to VMAX VCB e 0V IC e 1 mA to 0 3 mA IC e 10 mA to 1 mA (Note 2) IC1 e IC2 VOS Trimmed to 0 at 25 C IC e 3 nA to 300 mA VCB e 0 (Note 3) VCB e VMAX VCC e VMAX IC e 100 mA VCB e 0V f e 100 Hz to 100 kHz IC e 1 mA IB e 10 mA IC e 1 mA IB e 100 mA 350 350 300 200 LM194 Typ 700 550 450 300 05 10 2 Max Min 300 250 200 150 LM394 Typ 700 550 450 300 05 10 4 Max LM394B 394C Min 225 200 150 100 Typ 500 400 300 200 10 20 5 % % Max Units Current Gain Match (hFE Match) 100 DIB hFE(MIN) e IC Emitter-Base Offset Voltage Change in Emitter-Base Offset Voltage vs Collector-Base Voltage (CMRR) Change in Emitter-Base Offset Voltage vs Collector Current Emitter-Base Offset Voltage Temperature Drift Logging Conformity Collector-Base Leakage Collector-Collector Leakage Input Voltage Noise Collector to Emitter Saturation Voltage 25 100 25 150 50 200 mV 10 25 10 50 10 100 mV 5 25 5 50 5 50 mV 0 08 0 03 150 0 05 01 03 01 0 08 0 03 150 10 03 02 0 03 150 15 05 mV C mV C mV 0 25 20 0 05 01 05 50 0 05 01 05 50 nA nA 18 02 01 18 02 01 18 02 01 nV 0Hz V V Note 1 Collector-base voltage is swept from 0 to VMAX at a collector current of 1 mA 10 mA 100 mA and 1 mA Note 2 Offset voltage drift with VOS e 0 at TA e 25 C is valid only when the ratio of IC1 to IC2 is adjusted to give the initial zero offset This ratio must be held to within 0 003% over the entire temperature range Measurements taken at a 25 C and temperature extremes Note 3 Logging conformity is measured by computing the best fit to a true exponential and expressing the error as a base-emitter voltage deviation Note 4 Refer to RETS194X drawing of military LM194H version for specifications 2 Typical Applications (Continued) Fast Accurate Logging Amplifier VIN e 10V to 0 1 mV or IIN e 1 mA to 10 nA TL H 9241 – 3 1 kX ( g 1%) at 25 C a 3500 ppm C Available from Vishay Ultronix Grand Junction CO Q81 Series VOUT e b log10 V J VIN REF Voltage Controlled Variable Gain Amplifier TL H 9241 – 4 R8–R10 and D2 provide a temperature independent gain control G e b 336 V1 (dB) Distortion k 0 1% Bandwidth l 1 MHz 100 dB gain range 3 Typical Applications (Continued) Precision Low Drift Operational Amplifier Common-mode range 10V IBIAS 25 nA IOS 0 5 nA VOS (untrimmed) 125 mV (DVOS DT) 0 2 mV C CMRR 120 dB AVOL 2 500 000 C C C C 200 pF for unity gain 30 pF for AV 10 5 pF for AV 100 0 pF for AV 1000 TL H 9241 – 5 High Accuracy One Quadrant Multiplier Divider TL H 9241 – 6 VOUT e (X) (Y) positive inputs only (Z) Typical linearity 0 1% 4 Typical Applications (Continued) High Performance Instrumentation Amplifier Gain e 106 RS TL H 9241 – 7 Performance Characteristics Linearity of Gain ( g 10V Output) Common-Mode Rejection Ratio (60 Hz) Common-Mode Rejection Ratio (1 kHz) Power Supply Rejection Ratio a Supply b Supply Bandwidth ( b 3 dB) Slew Rate Offset Voltage Drift Common-Mode Input Resistance Differential Input Resistance Input Referred Noise (100 Hz s f s 10 kHz) Input Bias Current Input Offset Current Common-Mode Range Output Swing (RL e 10 kX) Assumes s 5 ppm C tracking of resistors G e 10 000 G e 1 000 G e 100 G e 10 s 0 01 s 0 01 s 0 02 s 0 05 t 120 t 120 t 110 t 90 t 110 t 110 t 90 t 70 l 110 l 110 l 110 l 110 l 110 l 90 l 110 l 70 % dB dB 50 03 s 0 25 l 109 l 3 x 108 5 75 15 g 11 g 13 dB dB 50 50 50 kHz 03 03 03 V ms s0 4 s 10 mV C 2 l 109 l 109 l 109 X l 3 x 108 l 3 x 108 l 3 x 108 X nV 6 12 70 0Hz 75 75 75 nA 15 15 15 nA g 11 g 11 g 10 V g 13 g 13 g 13 V 5 Typical Performance Characteristics Small Signal Current Gain vs Collector Current DC Current Gain vs Temperature Unity Gain Frequency (ft) vs Collector Current Offset Voltage Drift vs Initial Offset Voltage Base-Emitter On Voltage vs Collector Current Small Signal Input Resistance (hie) vs Collector Current Small Signal Output Conductance vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current Input Voltage Noise vs Frequency Base Current Noise vs Frequency Noise Figure vs Collector Current Collector to Collector Capacitance vs Reverse Bias Voltage TL H 9241 – 8 6 Typical Performance Characteristics Collector to Collector Capacitance vs Collector-Substrate Voltage (Continued) Emitter-Base Capacitance vs Reverse Bias Voltage Collector-Base Capacitance vs Reverse Bias Voltage Collector-Base Leakage vs Temperature Collector to Collector Leakage vs Temperature Offset Voltage Long Term Stability at High Temperature Emitter-Base Log Conformity TL H 9241 – 9 TL H 9241 – 10 Low Frequency Noise of Differential Pair TL H 9241 – 11 Unit must be in still air environment so that differential lead temperature is held to less than 0 0003 C 7 Connection Diagrams Metal Can Package Dual-In-Line and Small Outline Packages TL H 9241 – 12 Top View Order Number LM194H 883 LM394H LM394BH or LM394CH See NS Package Number H06C TL H 9241 – 13 Top View Order Number LM394N or LM394CN See NS Package Number N08E Available per SMD 5962-8777701 8 Physical Dimensions inches (millimeters) Metal Can Package (H) Order Number LM194H 883 LM394H LM394BH or LM394CH NS Package Number H06C 9 LM194 LM394 Supermatch Pair Physical Dimensions inches (millimeters) (Continued) Molded Dual-In-Line Package (N) Order Number LM394CN or LM394N NS Package Number N08E LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user National Semiconductor Corporation 1111 West Bardin Road Arlington TX 76017 Tel 1(800) 272-9959 Fax 1(800) 737-7018 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness National Semiconductor Europe Fax (a49) 0-180-530 85 86 Email cnjwge tevm2 nsc com Deutsch Tel (a49) 0-180-530 85 85 English Tel (a49) 0-180-532 78 32 Fran ais Tel (a49) 0-180-532 93 58 Italiano Tel (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd 13th Floor Straight Block Ocean Centre 5 Canton Rd Tsimshatsui Kowloon Hong Kong Tel (852) 2737-1600 Fax (852) 2736-9960 National Semiconductor Japan Ltd Tel 81-043-299-2309 Fax 81-043-299-2408 National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications