LM5109BSDX

LM5109B www.ti.com SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 LM5109B High Voltage 1A Peak Half Bridge Gate Driver Check for Samples: LM5109B FEATURES PACKAGE • • • 1 2 • • • • • • • • • Drives Both a High-Side and Low-Side NChannel MOSFET 1A peak Output Current (1.0A Sink / 1.0A Source) Independent TTL Compatible Inputs Bootstrap Supply Voltage to 108V DC Fast Propagation Times (30 ns Typical) Drives 1000 pF Load with 15ns Rise and Fall Times Excellent Propagation Delay Matching (2 ns Typical) Supply Rail Under-Voltage Lockout Low Power Consumption Pin Compatible with ISL6700 DESCRIPTION The LM5109B is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating highside driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the SOIC-8 and the thermally enhanced WSON-8 packages. TYPICAL APPLICATIONS • • • • SOIC-8 WSON-8 (4 mm x 4 mm) Current Fed Push-Pull Converters Half and Full Bridge Power Converters Solid State Motor Drives Two Switch Forward Power Converters Simplified Block Diagram VDD HV HB UVLO LEVEL SHIFT DRIVER HO HS HI VDD UVLO DRIVER LO LI VSS 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2007–2013, Texas Instruments Incorporated LM5109B SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 www.ti.com Connection Diagrams VDD 1 HI 2 LI 3 VSS 4 8 HB VDD 1 7 HO HI 2 6 HS LI 3 5 LO VSS 4 8 HB 7 HO 6 HS 5 LO WSON-8 SOIC-8 Figure 1. 8-Pin SOIC Package See Package Number D (R-PDSO-G8) Figure 2. 8-Pin WSON Package See Package Number NGT0008A PIN DESCRIPTIONS Pin # (1) Name Description Application Information SOIC-8 WSON-8 (1) 1 1 VDD Positive gate drive supply Locally decouple to VSS using low ESR/ESL capacitor located as close to IC as possible. 2 2 HI High side control input The HI input is compatible with TTL input thresholds. Unused HI input should be tied to ground and not left open. 3 3 LI Low side control input The LI input is compatible with TTL input thresholds. Unused LI input should be tied to ground and not left open. 4 4 VSS Ground reference All signals are referenced to this ground. 5 5 LO Low side gate driver output Connect to the gate of the low-side N-MOS device. 6 6 HS High side source connection Connect to the negative terminal of the bootstrap capacitor and to the source of the high-side N-MOS device. 7 7 HO High side gate driver output Connect to the gate of the high-side N-MOS device. 8 8 HB High side gate driver positive supply rail Connect the positive terminal of the bootstrap capacitor to HB and the negative terminal of the bootstrap capacitor to HS. The bootstrap capacitor should be placed as close to IC as possible. For WSON-8 package it is recommended that the exposed pad on the bottom of the package be soldered to ground plane on the PCB and the ground plane should extend out from underneath the package to improve heat dissipation. These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 2 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM5109B LM5109B www.ti.com SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 Absolute Maximum Ratings (1) (2) VDD to VSS -0.3V to 18V HB to HS −0.3V to 18V LI or HI to VSS −0.3V to VDD +0.3V LO to VSS −0.3V to VDD +0.3V HO to VSS VHS −0.3V to VHB +0.3V HS to VSS (3) −5V to 90V HB to VSS 108V Junction Temperature -40°C to +150°C Storage Temperature Range −55°C to +150°C ESD Rating HBM (4) (1) (2) (3) (4) 1.5 kV Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of the device is ensured. Operating Ratings do not imply ensured performance limits. For ensured performance limits and associated test conditions, see the Electrical Characteristics. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally not exceed -1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than VDD - 15V. For example, if VDD = 10V, the negative transients at HS must not exceed -5V. The human body model is a 100 pF capacitor discharged through a 1.5kΩ resistor into each pin. Recommended Operating Conditions VDD 8V to 14V HS (1) −1V to 90V HB VHS +8V to VHS +14V HS Slew Rate < 50 V/ns −40°C to +125°C Junction Temperature (1) In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally not exceed -1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than VDD - 15V. For example, if VDD = 10V, the negative transients at HS must not exceed -5V. Electrical Characteristics Specifications in standard typeface are for TJ = +25°C, and those in boldface type apply over the full operating junction temperature range. Unless otherwise specified, VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO (1). Symbol Parameter Conditions Min Typ Max Units SUPPLY CURRENTS IDD VDD Quiescent Current LI = HI = 0V 0.3 0.6 mA IDDO VDD Operating Current f = 500 kHz 1.8 2.9 mA IHB Total HB Quiescent Current LI = HI = 0V 0.06 0.2 mA IHBO Total HB Operating Current f = 500 kHz 1.4 2.8 mA IHBS HB to VSS Current, Quiescent VHS = VHB = 90V 0.1 10 IHBSO HB to VSS Current, Operating f = 500 kHz 0.5 µA mA INPUT PINS LI and HI VIL Low Level Input Voltage Threshold VIH High Level Input Voltage Threshold RI Input Pulldown Resistance 0.8 1.8 V 1.8 2.2 V 100 200 500 kΩ 6.0 6.7 7.4 V UNDER VOLTAGE PROTECTION VDDR VDD Rising Threshold VDDH VDD Threshold Hysteresis VHBR HB Rising Threshold (1) VDDR = VDD - VSS 0.5 VHBR = VHB - VHS 5.7 6.6 V 7.1 V Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL). Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM5109B 3 LM5109B SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 www.ti.com Electrical Characteristics (continued) Specifications in standard typeface are for TJ = +25°C, and those in boldface type apply over the full operating junction temperature range. Unless otherwise specified, VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO(1). Symbol VHBH Parameter Conditions Min Typ HB Threshold Hysteresis Max 0.4 Units V LO GATE DRIVER VOLL Low-Level Output Voltage ILO = 100 mA, VOHL = VLO – VSS 0.38 0.65 V VOHL High-Level Output Voltage ILO = −100 mA, VOHL = VDD– VLO 0.72 1.20 V IOHL Peak Pullup Current VLO = 0V 1.0 A IOLL Peak Pulldown Current VLO = 12V 1.0 A HO GATE DRIVER VOLH Low-Level Output Voltage IHO = 100 mA, VOLH = VHO– VHS 0.38 0.65 V VOHH High-Level Output Voltage IHO = −100 mA, VOHH = VHB– VHO 0.72 1.20 V IOHH Peak Pullup Current VHO = 0V 1.0 A IOLH Peak Pulldown Current VHO = 12V 1.0 A SOIC-8 (2) (3) 160 WSON-8 (2) (3) 40 THERMAL RESISTANCE θJA (2) (3) Junction to Ambient °C/W 4 layer board with Cu finished thickness 1.5/1/1/1.5 oz. Maximum die size used. 5x body length of Cu trace on PCB top. 50 x 50mm ground and power planes embedded in PCB. See the AN-1187 Application Report (SNOA401). The θJA is not a constant for the package and depends on the printed circuit board design and the operating conditions. Switching Characteristics Specifications in standard typeface are for TJ = +25°C, and those in boldface type apply over the full operating junction temperature range. Unless otherwise specified, VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO. Symbol Parameter Conditions Min Typ Max Units tLPHL Lower Turn-Off Propagation Delay (LI Falling to LO Falling) 30 56 ns tHPHL Upper Turn-Off Propagation Delay (HI Falling to HO Falling) 30 56 ns tLPLH Lower Turn-On Propagation Delay (LI Rising to LO Rising) 32 56 ns tHPLH Upper Turn-On Propagation Delay (HI Rising to HO Rising) 32 56 ns tMON Delay Matching: Lower Turn-On and Upper Turn-Off 2 15 ns tMOFF Delay Matching: Lower Turn-Off and Upper Turn-On 2 15 ns tRC, tFC Either Output Rise/Fall Time 15 - ns tPW Minimum Input Pulse Width that Changes the Output 4 CL = 1000 pF Submit Documentation Feedback 50 ns Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM5109B LM5109B www.ti.com SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 Typical Performance Characteristics VDD Operating Current vs Frequency 100 HB Operating Current vs Frequency 100 VDD = VHB = 12V VDD = VHB = 12V VSS = VHS = 0V VSS = VHS = 0V 10 10 IDDO (mA) CL = 2200 pF IDDO (mA) CL = 1000 pF CL = 1000 pF CL = 4400 pF CL = 2200 pF CL = 4400 pF 1 1 CL = 0 pF 0.1 CL = 0 pF CL = 470 pF CL = 470 pF 0.1 0.01 1 10 100 1000 1 10 FREQUENCY (kHz) 100 1000 FREQUENCY (kHz) Figure 3. Figure 4. Operating Current vs Temperature Quiescent Current vs Temperature 0.45 2.2 0.40 IDDO 0.35 CL = 0 pF f = 500 kHz 1.8 IDD, IHB (mA) IDDO, IHBO (mA) 2.0 VDD = VHB = 12V 1.6 VSS = VHS = 0V 1.4 IHBO IDDO 0.30 0.25 LI = HI = 0V VDD = VHB = 12V 0.20 VSS = VHS = 0V 0.15 0.10 1.2 IHBO 0.05 0.00 -40 -25 -10 5 20 35 50 65 80 95 110 125 1.0 -40 -25 -10 5 20 35 50 65 80 95 110 125 TEMPERATURE (oC) TEMPERATURE (°C) Figure 5. Figure 6. Quiescent Current vs Voltage Propagation Delay vs Temperature 600 44 CL = 0 pF VDD = VHB VDD = VHB = 12V CURRENT (PA) VSS= VHS = 0V PROPAGATION DELAY (ns) 500 LI = HI = 0V IDD 400 300 200 IHB 100 0 8 10 12 14 16 18 40 tLPHL tHPHL VSS = VHS = 0V 36 turn off 32 tHPLH 28 24 tLPLH turn on 20 -40 -25 -10 5 20 35 50 65 80 95 110 125 VDD, VHB (V) TEMPERATURE (oC) Figure 7. Figure 8. Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM5109B 5 LM5109B SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) LO and HO High Level Output Voltage vs Temperature LO and HO Low Level Output Voltage vs Temperature 0.6 1.6 Output Current : -100 mA VSS = VHS = 0V Output Current : -100 mA 1.4 VSS = VHS = 0V 0.5 1.2 VDD = VHB = 8V 1.0 VOL (V) VOH (V) VDD = VHB = 8V 0.8 0.4 VDD = VHB = 12V 0.6 VDD = VHB = 12V 0.4 0.2 0.3 VDD = VHB = 16V VDD = VHB = 16V 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 0.2 -40 -25 -10 5 20 35 50 65 80 95 110 125 TEMPERATURE (°C) TEMPERATURE (°C) Figure 9. Figure 10. Undervoltage Rising Thresholds vs Temperature THRESHOLD (V) 6.9 VDDR = VDD - VSS 0.48 VHBR = VHB - VHS 0.46 HYSTERESIS (V) 7.0 Undervoltage Hysteresis vs Temperature 0.50 6.8 VDDR 6.7 VHBR 6.6 VDDH 0.44 0.42 0.40 0.38 VHBH 0.36 6.5 0.34 6.4 0.32 0.30 -40 -25 -10 5 20 35 50 65 80 95 110 125 6.3 -40 -25 -10 5 20 35 50 65 80 95 110 125 TEMPERATURE (oC) TEMPERATURE (oC) Figure 11. Figure 12. Input Thresholds vs Temperature Input Thresholds vs Supply Voltage 1.92 VDD = 12V 1.95 INPUT THRESHOLD VOLTAGE (V) INPUT THRESHOLD VOLTAGE (V) 2.00 VSS = 0V Rising 1.90 1.85 Falling 1.80 1.75 1.91 1.89 1.88 1.87 1.86 1.85 Falling 1.84 1.83 1.82 1.81 1.70 1.80 -40 -25 -10 5 20 35 50 65 80 95 110 125 8 9 10 11 12 13 14 15 16 VDD (V) o TEMPERATURE ( C) Figure 13. 6 Rising 1.90 Figure 14. Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM5109B LM5109B www.ti.com SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 Timing Diagram LI LI HI tHPLH tLPLH HI tHPHL tLPHL LO LO HO HO tMON tMOFF Figure 15. Layout Considerations Optimum performance of high and low-side gate drivers cannot be achieved without taking due considerations during circuit board layout. The following points are emphasized: 1. Low ESR/ESL capacitors must be connected close to the IC between VDD and VSS pins and between HB and HS pins to support high peak currents being drawn from VDD and HB during the turn-on of the external MOSFETs. 2. To prevent large voltage transients at the drain of the top MOSFET, a low ESR electrolytic capacitor and a good quality ceramic capacitor must be connected between the MOSFET drain and ground (VSS). 3. In order to avoid large negative transients on the switch node (HS) pin, the parasitic inductances between the source of the top MOSFET and the drain of the bottom MOSFET (synchronous rectifier) must be minimized. 4. Grounding considerations: – The first priority in designing grounding connections is to confine the high peak currents that charge and discharge the MOSFET gates to a minimal physical area. This will decrease the loop inductance and minimize noise issues on the gate terminals of the MOSFETs. The gate driver should be placed as close as possible to the MOSFETs. – The second consideration is the high current path that includes the bootstrap capacitor, the bootstrap diode, the local ground referenced bypass capacitor, and the low-side MOSFET body diode. The bootstrap capacitor is recharged on a cycle-by-cycle basis through the bootstrap diode from the ground referenced VDD bypass capacitor. The recharging occurs in a short time interval and involves high peak current. Minimizing this loop length and area on the circuit board is important to ensure reliable operation. Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM5109B 7 LM5109B SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 www.ti.com HS Transient Voltages Below Ground The HS node will always be clamped by the body diode of the lower external FET. In some situations, board resistances and inductances can cause the HS node to transiently swing several volts below ground. The HS node can swing below ground provided: 1. HS must always be at a lower potential than HO. Pulling HO more than -0.3V below HS can activate parasitic transistors resulting in excessive current flow from the HB supply, possibly resulting in damage to the IC. The same relationship is true with LO and VSS. If necessary, a Schottky diode can be placed externally between HO and HS or LO and GND to protect the IC from this type of transient. The diode must be placed as close to the IC pins as possible in order to be effective. 2. HB to HS operating voltage should be 15V or less. Hence, if the HS pin transient voltage is -5V, VDD should be ideally limited to 10V to keep HB to HS below 15V. 3. Low ESR bypass capacitors from HB to HS and from VDD to VSS are essential for proper operation. The capacitor should be located at the leads of the IC to minimize series inductance. The peak currents from LO and HO can be quite large. Any series inductances with the bypass capacitor will cause voltage ringing at the leads of the IC which must be avoided for reliable operation. 8 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM5109B LM5109B www.ti.com SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 REVISION HISTORY Changes from Revision A (March 2013) to Revision B • Page Changed layout of National Data Sheet to TI format ............................................................................................................ 8 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LM5109B 9 PACKAGE OPTION ADDENDUM www.ti.com 23-Sep-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) LM5109BMA ACTIVE SOIC D 8 95 TBD Call TI Call TI -40 to 125 L5109 BMA LM5109BMA/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 L5109 BMA LM5109BMAX ACTIVE SOIC D 8 TBD Call TI Call TI -40 to 125 L5109 BMA LM5109BMAX/NOPB ACTIVE SOIC D 8 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 L5109 BMA LM5109BSD ACTIVE WSON NGT 8 TBD Call TI Call TI -40 to 125 5109BSD LM5109BSD/NOPB ACTIVE WSON NGT 8 Green (RoHS & no Sb/Br) SN Level-1-260C-UNLIM -40 to 125 5109BSD LM5109BSDX ACTIVE WSON NGT 8 TBD Call TI Call TI -40 to 125 5109BSD LM5109BSDX/NOPB ACTIVE WSON NGT 8 Green (RoHS & no Sb/Br) SN Level-1-260C-UNLIM -40 to 125 5109BSD 2500 1000 4500 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 23-Sep-2013 (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LM5109BMAX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 LM5109BSD/NOPB WSON NGT 8 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LM5109BSDX/NOPB WSON NGT 8 4500 330.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM5109BMAX/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM5109BSD/NOPB WSON NGT 8 1000 210.0 185.0 35.0 LM5109BSDX/NOPB WSON NGT 8 4500 367.0 367.0 35.0 Pack Materials-Page 2 MECHANICAL DATA NGT0008A SDC08A (Rev A) www.ti.com IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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