LME49880
www.ti.com
SNAS455C – DECEMBER 2009 – REVISED APRIL 2013
LME49880 Overture®
E-Series Dual JFET Input Audio Operational Amplifier
Check for Samples: LME49880
FEATURES
DESCRIPTION
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The LME49880 is part of the ultra-low distortion, low
noise, high slew rate operational amplifier series
optimized and fully specified for high performance,
high fidelity application. The LME49880 is developed
in JFET technology and reducing the flicker noise as
well as the noise corner frequency significantly. It
combines low voltage noise density (7nV/√Hz) with
very low THD+N (0.00003%). The LME49880 has a
high slew rate of ±17 V/μs and an output current
capability of ±22mA. It drives 600Ω loads to within
1.3V of either power supply voltage.
1
23
Easily Drives 600Ω Loads
Output Short Circuit Protection
APPLICATIONS
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Ultra High Quality Audio Signal Processing
Preamplifier
Spectrum Analyzers
Ultrasound Preamplifier
Active Filters
KEY SPECIFICATIONS
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Input Bias Current 5 pA (Typ)
Power Supply Voltage Range ±5V to ±17 V
THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz)
– RL = 2kΩ 0.00003 % (Typ)
– RL = 600Ω, 0.00003 % (Typ)
Slew Rate ±17 V/μs (Typ)
Gain Bandwidth Product 25 MHz (Typ)
Open Loop Gain (RL = 600Ω) 115 dB (Typ)
Input Noise Density 7 nV/√Hz (Typ)
Input Offset Voltage 5 mV (Typ)
CMRR 110 dB (Typ)
The LME49880 has a wide supply range of ±5V to
±17V. Its outstanding GAIN (120dB), and low input
bias current (5pA) give the amplifier excellent
operational
amplifier
DC
performance.
The
LME49880 is unity gain stable and capable of driving
complex loads with values as high as 100pF. It is
available in an 8-lead narrow body SO PowerPAD.
TYPICAL APPLICATION
VOLTAGE NOISE (nV/ Hz)
CURRENT NOISE (fA/ Hz)
1k
100
Current Noise
10
Voltage Noise
1
10
100
1k
10k
100k
FREQUENCY (Hz)
Figure 1. Current Noise and Voltage Spectral
Density
Figure 2. THD+N vs Frequency
VCC = ±15V, VO = 3VRMS, RL = 600Ω
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Overture is a registered trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2013, Texas Instruments Incorporated
LME49880
SNAS455C – DECEMBER 2009 – REVISED APRIL 2013
www.ti.com
CONNECTION DIAGRAM
1
8
+
OUTPUT A
V
2
7
INVERTING INPUT A
OUTPUT B
A
NON-INVERTING
INPUT A
3
-
4
B
+
+
6
INVERTING INPUT B
5
NON-INVERTING
INPUT B
V
Figure 3. Connection Diagram
See Package Number — DDA0008B
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS (1) (2)
Power Supply Voltage (VS = V+ - V-)
36V
−65°C to 150°C
Storage Temperature
Input Voltage
(V-) - 0.3V to (V+) + 0.3V
Output Short Circuit (3)
Continuous
Power Dissipation
Internally Limited
ESD Rating (4)
2000V
ESD Rating (5)
200V
ESD Rating (6)
1000V
Junction Temperature
150°C
Thermal Resistance
θJA (SO PowerPAD)
Solder Information
Infrared or Convection (20 sec)
(1)
(2)
(3)
(4)
(5)
(6)
2
55°C/W
260°C
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All
voltages are measured with respect to the ground pin, unless otherwise specified.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
Amplifier output connected to GND, any number of amplifiers within a package.
Human body model, applicable std. JESD22-A114C.
Machine model, applicable std. JESD22-A115-A.
Charge device model, applicable std JESD22-C101-A.
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Copyright © 2009–2013, Texas Instruments Incorporated
Product Folder Links: LME49880
LME49880
www.ti.com
SNAS455C – DECEMBER 2009 – REVISED APRIL 2013
OPERATING RATINGS
TMIN ≤ TA ≤ TMAX
Temperature Range
–40°C ≤ TA ≤ 85°C
±5V ≤ VS ≤ ±17V
Supply Voltage Range
ELECTRICAL CHARACTERISTICS
(1)
The following specifications apply for VS = ±15V, TA = 25°C, unless otherwise specified.
Symbol
THD+N
Parameter
Total Harmonic Distortion + Noise
Conditions
AV = 1, VOUT = 3VRMS
RL = 2kΩ
RL = 600Ω
LME49880
Typical
(2)
0.00003
0.00003
Limit (3)
Units
(Limits)
% (max)
0.00009
GBWP
Gain Bandwidth Product
AV = 1k, RL = 2k
25
19
MHz (min)
SR
Slew Rate
RL = 2k
±17
±12
V/μs (min)
Settling time
AV = –1, 10V step, CL = 100pF
0.1% error range
0.8
Equivalent Input Noise Voltage
fBW = 20Hz to 20kHz
0.7
1.6
Equivalent Input Noise Density
f = 1kHz
f = 10Hz
7
16
11
nV/√Hz
(max)
iN
Current Noise Density
f = 1kHz
VOS
Offset Voltage
±10
mV (max)
ΔVOS/ΔTemp
Average Input Offset Voltage Drift vs
Temperature
–40°C ≤ TA ≤ 85°C
3
μV/°C
PSRR
Power Supply Rejection Ratio
VCC = ±5V to ±15V
110
dB
IB
Input Bias Current
VCM = 0V
5
150
pA (max)
IOS
Input Offset Current
VCM = 0V
2
100
pA (max)
+11.5
–11.5
(V+) –5V
(V-) +5V
V (min)
ts
eN
μs
6
±5
μVRMS
(max)
fA/√Hz
VIN-CM
Common-Mode Input Voltage Range
CMRR > 55dB
CMRR
Common-Mode Rejection
–10V
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