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THS4509QRGTRQ1

THS4509QRGTRQ1

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    VQFN-16_3X3MM-EP

  • 描述:

    THS4509-Q1 AUTOMOTIVE CATALOG WI

  • 数据手册
  • 价格&库存
THS4509QRGTRQ1 数据手册
Sample & Buy Product Folder Support & Community Tools & Software Technical Documents THS4509-Q1 SLOS547A – NOVEMBER 2008 – REVISED NOVEMBER 2015 THS4509-Q1 Wideband Low-Noise Low-Distortion Fully Differential Amplifier 1 Features 3 Description • • • • • • • • • • • • • • • The THS4509-Q1 is a wideband, fully differential operational amplifier designed for 5-V dataacquisition systems. It has very low noise at 1.9 nV/√Hz, and extremely low harmonic distortion of –75-dBc HD2 and –80-dBc HD3 at 100 MHz with 2 Vpp, G = 10 dB, and 1-kΩ load. Slew rate is very high at 6600 V/μs and with settling time of 2 ns to 1% (2-V step), it is ideal for pulsed applications. It is designed for minimum gain of 6 dB but is optimized for gain of 10 dB. 1 • Qualified for Automotive Applications Fully Differential Architecture Centered Input Common-Mode Range Minimum Gain of 2 V/V (6 dB) Bandwidth: 1900 MHz Slew Rate: 6600 V/μs 1% Settling Time: 2 ns HD2: –75 dBc at 100 MHz HD3: –80 dBc at 100 MHz OIP2: 73 dBm at 70 MHz OIP3: 37 dBm at 70 MHz Input Voltage Noise: 1.9 nV/√Hz (f > 10 MHz) Noise Figure: 17.1 dB Output Common-Mode Control Power Supply: – Voltage: 3 V (±1.5 V) to 5 V (±2.5 V) – Current: 37.7 mA Power-Down Capability: 0.65 mA To allow for dc coupling to analog-to-digital converters (ADCs), its unique output common-mode control circuit maintains the output common-mode voltage within 3-mV offset (typical) from the set voltage, when set within 0.5 V of mid-supply, with less than 4-mV differential offset voltage. The common-mode set point is set to mid-supply by internal circuitry, which may be overdriven from an external source. 2 Applications • • • • • • Adaptive Cruise Control Blind Spot Detection Collision Warning Industrial 5-V Data Acquisition Systems High Linearity ADC Amplifier Test and Measurement The input and output are optimized for best performance with their common-mode voltages set to mid-supply. Along with high-performance at low power-supply voltage, this makes for extremely highperformance single-supply 5-V data-acquisition systems. The THS4509-Q1 is offered in a quad 16-pin leadless QFN package (RGT) and is characterized for operation over the full automotive temperature range from –40°C to 125°C. Device Information(1) PART NUMBER THS4509-Q1 MINIMUM GAIN 6 dB COMMON-MODE RANGE OF INPUT 0.75 V to 4.25 V (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Schematic From 50 Ω Source VIN 100 Ω 2.5 V 69.8 Ω 100 Ω 0.22 µF 49.9 Ω 348 Ω 69.8 Ω 487 Ω THS 4509 CM 487 Ω 1:1 56.3 Ω VOUT To 50 Ω Test Equipment Open −2.5 V 348 Ω 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. THS4509-Q1 SLOS547A – NOVEMBER 2008 – REVISED NOVEMBER 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 4 4 4 4 5 7 9 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics: VS+ – VS– = 5 V ............... Electrical Characteristics: VS+ – VS– = 3 V ............... Typical Characteristics .............................................. Detailed Description ............................................ 25 7.1 Overview ................................................................. 25 7.2 Functional Block Diagram ....................................... 25 7.3 Feature Description................................................. 25 7.4 Device Functional Modes........................................ 26 8 Application and Implementation ........................ 27 8.1 Application Information............................................ 27 8.2 Typical Applications ................................................ 33 9 Power Supply Recommendations...................... 35 10 Layout................................................................... 36 10.1 Layout Guidelines ................................................. 36 10.2 Layout Example .................................................... 39 11 Device and Documentation Support ................. 40 11.1 11.2 11.3 11.4 11.5 Documentation Support ........................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 40 40 40 40 40 12 Mechanical, Packaging, and Orderable Information ........................................................... 40 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Original (November 2008) to Revision A • 2 Page Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ................................................................................................. 1 Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: THS4509-Q1 THS4509-Q1 www.ti.com SLOS547A – NOVEMBER 2008 – REVISED NOVEMBER 2015 5 Pin Configuration and Functions RGT Package 16-Pin QFN Top View VS– 16 15 14 13 NC 1 12 PD VIN– 2 11 VIN+ VOUT+ 3 10 VOUT– CM 4 9 5 6 7 CM 8 VS+ Pin Functions PIN I/O DESCRIPTION NAME NO. CM 4,9 I NC 1 — PD 12 I Power down, PD = logic low puts part into low-power mode, PD = logic high or open for normal operation VIN– 2 I Inverting amplifier input VIN+ 11 I Noninverting amplifier input VOUT– 10 O Inverted amplifier output VOUT+ 3 O Noninverted amplifier output VS– 13, 14, 15, 16 I Negative amplifier power supply input VS+ 5, 6, 7, 8 I Positive amplifier power-supply input Common-mode voltage input No internal connection Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: THS4509-Q1 3 THS4509-Q1 SLOS547A – NOVEMBER 2008 – REVISED NOVEMBER 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN VS– to VS+ Supply voltage VI Input voltage VID Differential input voltage IO Output current (2) –VS Continuous power dissipation MAX UNIT 6 V +VS 4 V 200 mA See Thermal Information TJ Maximum junction temperature 150 °C TA Operating free-air temperature –40 125 °C Tstg Storage temperature –65 150 °C (1) (2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The THS4509-Q1 incorporates a (QFN) exposed thermal pad on the underside of the chip. This acts as a heatsink and must be connected to a thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature, which could permanently damage the device. See TI technical brief SLMA002 and SLMA004 for more information about utilizing the QFN thermally enhanced package. 6.2 ESD Ratings VALUE Human-body model (HBM), per AEC Q100-002 V(ESD) (1) Electrostatic discharge (1) UNIT ±2000 Charged-device model (CDM), per AEC Q100-011 ±1500 Machine Model (MM) ±100 V AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN Total supply voltage NOM MAX 3 Operating temperature, TJ –40 25 UNIT 5 V 125 °C 6.4 Thermal Information THS4509-Q1 THERMAL METRIC (1) RGT (QFN) UNIT 16-PIN RθJA Junction-to-ambient thermal resistance 50.8 °C/W RθJC(top) Junction-to-case (top) thermal resistance 67.7 °C/W RθJB Junction-to-board thermal resistance 24.5 °C/W ψJT Junction-to-top characterization parameter 2 °C/W ψJB Junction-to-board characterization parameter 24.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 8.2 °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: THS4509-Q1 THS4509-Q1 www.ti.com SLOS547A – NOVEMBER 2008 – REVISED NOVEMBER 2015 6.5 Electrical Characteristics: VS+ – VS– = 5 V test conditions (unless otherwise noted): VS+ = 2.5 V, VS– = –2.5 V, G = 10 dB, CM = open, VO = 2 Vpp, RF = 349 Ω, RL = 200 Ω differential, TA = 25°C, single-ended input, differential output, input and output referenced to mid-supply PARAMETER TEST CONDITIONS TEST LEVEL (1) MIN TYP MAX UNIT AC PERFORMANCE G = 6 dB, VO = 100 mVpp Small-signal bandwidth 2 G = 10 dB, VO = 100 mVpp 1.9 G = 14 dB, VO = 100 mVpp 600 G = 20 dB, VO = 100 mVpp 275 GHz MHz Gain-bandwidth product G = 20 dB Bandwidth for 0.1-dB flatness G = 10 dB, VO = 2 Vpp Large-signal bandwidth G = 10 dB, VO = 2 Vpp 1.5 GHz Slew rate (differential) 2-V step 6600 V/μs Rise time 2-V step 0.5 ns Fall time 2-V step 0.5 ns Settling time to 1% 2-V step 2 ns Settling time to 0.1% 2-V step 10 ns Second-order harmonic distortion Third-order harmonic distortion 3 GHz 300 MHz f = 10 MHz –104 f = 50 MHz –80 f = 100 MHz –68 f = 10 MHz –108 C f = 50 MHz –92 f = 100 MHz –81 Second-order intermodulation distortion 200-kHz tone spacing, RL = 499 Ω fC = 70 MHz –78 fC = 140 MHz –64 Third-order intermodulation distortion 200-kHz tone spacing, RL = 499 Ω fC = 70 MHz –95 fC = 140 MHz –78 200-kHz tone spacing, RL = 100 Ω, referenced to 50-Ω output fC = 70 MHz 78 Second-order output intercept point fC = 140 MHz 58 200-kHz tone spacing, RL = 100 Ω, referenced to 50-Ω output fC = 70 MHz 43 Third-order output intercept point fC = 140 MHz 38 dBc dBc dBc dBc dBm dBm fC = 70 MHz 12.2 fC = 140 MHz 10.8 Noise figure 50-Ω system, 10 MHz 17.1 dB Input voltage noise f > 10 MHz 1.9 nV/√Hz Input current noise f > 10 MHz 2.2 pA/√Hz 1-dB compression point dBm DC PERFORMANCE Open-loop voltage gain (AOL) Input offset voltage Average input offset voltage drift Input bias current Average input bias current drift Input offset current Average input offset current drift (1) C TA = 25°C TA = –40°C to 125°C TA = –40°C to 125°C TA = 25°C TA = –40°C to 125°C TA = –40°C to 125°C TA = 25°C TA = –40°C to 125°C TA = –40°C to 125°C A B A B A B 68 dB 1 4 1 5 2.6 mV mV µV/°C 8 15.5 8 18.5 20 µA nA/°C 1.6 3.6 1.6 7 4 µA nA/°C Test levels: A = 100% tested at 25°C, overtemperature limits by characterization and simulation; B = Limits set by characterization and simulation; C = Typical value only for information. Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: THS4509-Q1 5 THS4509-Q1 SLOS547A – NOVEMBER 2008 – REVISED NOVEMBER 2015 www.ti.com Electrical Characteristics: VS+ – VS– = 5 V (continued) test conditions (unless otherwise noted): VS+ = 2.5 V, VS– = –2.5 V, G = 10 dB, CM = open, VO = 2 Vpp, RF = 349 Ω, RL = 200 Ω differential, TA = 25°C, single-ended input, differential output, input and output referenced to mid-supply PARAMETER TEST CONDITIONS TEST LEVEL (1) MIN TYP MAX UNIT INPUT Common-mode input range high 1.75 Common-mode input range low V B –1.75 Differential input impedance C 1.35 || 1.77 MΩ || pF Common-mode input impedance C 1.02 || 2.26 MΩ || pF Common-mode rejection ratio 90 dB OUTPUT Maximum output voltage high Minimum output voltage low Differential output voltage swing Each output with 100 Ω to mid-supply Each output with 100 Ω to mid-supply TA = 25°C 1.2 1.4 TA = –40°C to 125°C 1.1 1.4 TA = 25°C A TA = –40°C to 125°C 4.8 TA = –40°C to 125°C V –1.4 –1.2 –1.4 –1.1 5.6 V V 4.4 Differential output current drive RL = 10 Ω 96 mA Output balance error VO = 100 mV, f = 1 MHz –49 dB Closed-loop output impedance f = 1 MHz 0.3 Ω Small-signal bandwidth 700 MHz Slew rate 110 V/μs 1 V/V 5 mV ±40 µA C OUTPUT COMMON-MODE VOLTAGE CONTROL Gain Output common-mode offset from CM input 1.25 V < CM < 3.5 V CM input bias current 1.25 V < CM < 3.5 V C CM input voltage range –1.5 to 1.5 CM input impedance V 23 || 1 CM default voltage kΩ || pF 0 V POWER SUPPLY Specified operating voltage Maximum quiescent current Minimum quiescent current C TA = –40°C to 125°C TA = 25°C C POWER DOWN Referenced to Vs– Enable voltage threshold Assured on above 2.1 V + VS– Disable voltage threshold Assured off below 0.7 V + VS– Input bias current TA = 25°C TA = –40°C to 125°C C A PD = VS– 5 5.25 37.7 40.9 37.7 41.9 34.5 37.7 33.5 37.7 Turn-on time delay Measured to output on Turn-off time delay Measured to output off Submit Documentation Feedback C V mA mA 90 dB >2.1 + VS– V 10 MHz 1.9 nV/√Hz Input current noise f > 10 MHz 2.2 pA/√Hz 1-dB compression point dBm DC PERFORMANCE Open-loop voltage gain (AOL) Input offset voltage TA = 25°C Average input offset voltage drift TA = –40°C to 125°C Input bias current TA = 25°C Average input bias current drift 68 dB 1 mV 2.6 µV/°C 6 µA TA = –40°C to 125°C 20 nA/°C Input offset current TA = 25°C 1.6 Average input offset current drift TA = –40°C to 125°C (1) C 4 µA nA/°C Test levels: A = 100% tested at 25°C, overtemperature limits by characterization and simulation; B = Limits set by characterization and simulation; C = Typical value only for information. Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: THS4509-Q1 7 THS4509-Q1 SLOS547A – NOVEMBER 2008 – REVISED NOVEMBER 2015 www.ti.com Electrical Characteristics: VS+ – VS– = 3 V (continued) test conditions (unless otherwise noted): VS+ = 1.5 V, VS– = –1.5 V, G = 10 dB, CM = open, VO = 1 Vpp, RF = 349 Ω, RL = 200 Ω differential, TA = 25°C, single-ended input, differential output, input and output referenced to mid-supply PARAMETER TEST CONDITIONS TEST LEVEL (1) MIN TYP MAX UNIT INPUT Common-mode input range high 0.75 Common-mode input range low B Common-mode rejection ratio V –0.75 V 80 dB Differential input impedance C 1.35 || 1.77 MΩ || pF Common-mode input impedance C 1.02 || 2.26 MΩ || pF OUTPUT Maximum output voltage high Each output with 100 Ω to mid-supply TA = 25°C 0.45 V Minimum output voltage low Each output with 100 Ω to mid-supply TA = 25°C –0.45 V C Differential output voltage swing 1.8 V 50 mA VO = 100 mV, f = 1 MHz –49 dB f = 1 MHz 0.3 Ω 570 MHz 60 V/μs 1 V/V 4 mV ±40 µA Differential output current drive RL = 10 Ω Output balance error Closed-loop output impedance OUTPUT COMMON-MODE VOLTAGE CONTROL Small-signal bandwidth Slew rate Gain Output common-mode offset from CM input 1.25 V < CM < 3.5 V CM input bias current 1.25 V < CM < 3.5 V C CM input voltage range –1.5 to 1.5 CM input impedance 20 || 1 CM default voltage 0 V kΩ || pF V POWER SUPPLY Specified operating voltage Quiescent current TA = 25°C Power-supply rejection (±PSRR) C 3 A 34.8 mA C 70 dB V POWER DOWN Referenced to Vs– Enable voltage threshold Assured on above 2.1 V + VS– >2.1 + VS– Disable voltage threshold Assured off below 0.7 V + VS–
THS4509QRGTRQ1 价格&库存

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