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TLV2369IDGKT

TLV2369IDGKT

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    TSSOP8

  • 描述:

    IC OPAMP GP 2 CIRCUIT 8VSSOP

  • 数据手册
  • 价格&库存
TLV2369IDGKT 数据手册
Sample & Buy Product Folder Support & Community Tools & Software Technical Documents TLV369, TLV2369 SBOS757 – MAY 2016 TLVx369 Cost-Optimized, 800-nA, 1.8-V, Rail-to-Rail I/O Operational Amplifier with Zero-Crossover Distortion 1 Features 3 Description • The TLV369 family of single and dual operational amplifiers represents a cost-optimized generation of 1.8-V nanopower amplifiers. 1 • • • • • • • Cost-Optimized Precision Amplifier nanoPower: 800 nA/Ch (Typ) Low Offset Voltage: 400 µV (Typ) Rail-to-Rail Input and Output Zero-Crossover Distortion Low Offset Drift: 0.5 µV/°C (Typ) Gain-Bandwidth Product: 12 kHz Supply Voltage: 1.8 V to 5.5 V microSize Packages: SC70-5, VSSOP-8 2 Applications • • • • Blood Glucose Meters Test Equipment Low-Power Sensor Signal Conditioning Portable Devices With the zero-crossover distortion circuitry, these amplifiers feature high linearity over the full commonmode input range with no crossover distortion, enabling true rail-to-rail input and operating from a 1.8-V to 5.5-V single supply. The family is also compatible with industry-standard nominal voltages of 3.0 V, 3.3 V, and 5.0 V. The TLV369 (single version) is offered in a 5-pin SC70 package. The TLV2369 (dual version) comes in 8-pin VSSOP and SOIC packages. Device Information(1) PART NUMBER TLV369 TLV2369 PACKAGE BODY SIZE (NOM) SC70 (5) 2.00 mm × 1.25 mm VSSOP (8) 3.00 mm × 3.00 mm SOIC (8) 4.90 mm × 3.91 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. TLV369 Family Eliminates Crossover Distortion Across the Full Supply Range 80 60 40 20 0 –20 –40 –60 –80 –100 10 Typical Units Shown VS = 5 V –0.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4 4.2 4.4 4.6 4.8 5 5.2 Normalized Offset Voltage (μV) 100 Common-Mode Voltage (V) 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TLV369, TLV2369 SBOS757 – MAY 2016 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 4 4 4 5 5 6 7 Absolute Maximum Ratings ...................................... ESD Ratings ............................................................ Recommended Operating Conditions....................... Thermal Information: TLV369 ................................... Thermal Information: TLV2369 ................................. Electrical Characteristics........................................... Typical Characteristics .............................................. 7.4 Device Functional Modes........................................ 11 8 Application and Implementation ........................ 12 8.1 Application Information............................................ 12 8.2 Typical Application .................................................. 12 8.3 System Examples .................................................. 14 9 Power Supply Recommendations...................... 15 10 Layout................................................................... 16 10.1 Layout Guidelines ................................................. 16 10.2 Layout Example .................................................... 16 11 Device and Documentation Support ................. 17 11.1 11.2 11.3 11.4 11.5 Detailed Description ............................................ 10 7.1 Overview ................................................................. 10 7.2 Functional Block Diagram ....................................... 10 7.3 Feature Description................................................. 11 Documentation Support ....................................... Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 17 17 17 17 17 12 Mechanical, Packaging, and Orderable Information ........................................................... 17 4 Revision History 2 DATE REVISION NOTES May 2016 * Initial release. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TLV369 TLV2369 TLV369, TLV2369 www.ti.com SBOS757 – MAY 2016 5 Pin Configuration and Functions TLV369: DCK Package 5-Pin SC70 Top View +IN 1 V- 2 -IN 3 5 V+ 4 OUT Pin Functions: TLV369 PIN NAME TLV369 I/O DESCRIPTION DCK (SC70) –IN 3 I Negative (inverting) input +IN OUT 1 I Positive (noninverting) input 4 O Output V– 2 — Negative (lowest) power supply or ground (for single-supply operation) V+ 5 — Positive (highest) power supply TLV2369: D Package 8-Pin SOIC Top View TLV2369: DGK Package 8-Pin VSSOP Top View OUT A 1 8 V+ OUT B -IN A 2 7 OUT B 6 -IN B +IN A 3 6 -IN B 5 +IN B V- 4 5 +IN B OUT A 1 8 V+ -IN A 2 7 +IN A 3 V- 4 Pin Functions: TLV2369 PIN TLV2369 NAME I/O DESCRIPTION D (SOIC) DGK (VSSOP) –IN A 2 2 I Inverting input, channel A –IN B 6 6 I Inverting input, channel B +IN A 3 3 I Noninverting input, channel A +IN B 5 5 I Noninverting input, channel B OUT A 1 1 O Output, channel A OUT B 7 7 O Output, channel B V– 4 4 — Negative (lowest) power supply V+ 8 8 — Positive (highest) power supply Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TLV369 TLV2369 3 TLV369, TLV2369 SBOS757 – MAY 2016 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) Supply, VS = (V+) – (V–) Voltage Signal input pin (2) Signal input pin (2) Current V (V–) – 0.5 (V+) + 0.5 V –10 10 mA –40 Junction, TJ Storage, Tstg (3) UNIT +7 Continuous Operating, TA (2) MAX 0 Output short-circuit (3) Temperature (1) MIN –65 mA 125 °C 150 °C 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Input pins are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails must be current limited to 10 mA or less. Short-circuit to VS / 2, one amplifier per package. 6.2 ESD Ratings over operating free-air temperature range (unless otherwise noted). VALUE V(ESD) (1) (2) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) Charged device model (CDM), per JEDEC specification JESD22-C101 (2) UNIT ±4000 V ±1500 JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted). MIN VS 4 NOM MAX UNIT Supply voltage 1.8 5.5 V Specified temperature –40 85 °C Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TLV369 TLV2369 TLV369, TLV2369 www.ti.com SBOS757 – MAY 2016 6.4 Thermal Information: TLV369 TLV369 THERMAL METRIC (1) DCK (SC70) UNIT 5 PINS RθJA Junction-to-ambient thermal resistance 293.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 95.2 °C/W RθJB Junction-to-board thermal resistance 83.4 °C/W ψJT Junction-to-top characterization parameter 2.9 °C/W ψJB Junction-to-board characterization parameter 82.4 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.5 Thermal Information: TLV2369 TLV2369 THERMAL METRIC (1) D (SOIC) DGK (VSSOP) 8 PINS 8 PINS UNIT RθJA Junction-to-ambient thermal resistance 121.5 168.5 °C/W RθJC(top) Junction-to-case (top) thermal resistance 66.3 58.1 °C/W RθJB Junction-to-board thermal resistance 62.5 88.9 °C/W ψJT Junction-to-top characterization parameter 22.8 9.3 °C/W ψJB Junction-to-board characterization parameter 61.9 87.6 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance n/a n/a °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TLV369 TLV2369 5 TLV369, TLV2369 SBOS757 – MAY 2016 www.ti.com 6.6 Electrical Characteristics VS (total supply voltage) = 1.8 V to 5.5 V; at TA = 25°C, and RL = 100 kΩ connected to VS / 2 (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX 0.4 2 UNIT OFFSET VOLTAGE At TA= 25°C VOS Input offset voltage dVOS/dT Drift At TA = –40°C to +85°C PSRR Power-supply rejection ratio VS = 1.8 V to 5.5 V At TA = –40°C to +85°C 0.85 80 mV 0.5 μV/°C 94 dB INPUT VOLTAGE RANGE VCM Common-mode voltage range CMRR Common-mode rejection ratio V– (V–) ≤ VCM ≤ (V+) 80 V+ V 110 dB 10 pA INPUT BIAS CURRENT IB Input bias current IOS Input offset current At TA= 25°C At TA= –40°C to +85°C See Figure 8 10 pA INPUT IMPEDANCE ZID Differential 1013 || 3 Ω || pF ZIC Common-mode 1013 || 6 Ω || pF NOISE μVPP En Input voltage noise f = 0.1 Hz to 10 Hz en Input voltage noise density f = 1 kHz 300 4 nV/√Hz in Input current noise density f = 1 kHz 1 fA/√Hz OPEN-LOOP GAIN AOL Open-loop voltage gain At VS = 5.5 V, 100 mV ≤ VO ≤ (V+) – 100 mV, RL = 100 kΩ At VS = 5.5 V, 500 mV ≤ VO ≤ (V+) – 500 mV, RL = 10 kΩ 130 dB 80 120 OUTPUT VO Voltage output swing from rail ISC Short-circuit current CLOAD Capacitive load drive RL = 10 kΩ 25 10 mV mA See Figure 10 FREQUENCY RESPONSE GBP Gain bandwidth product SR Slew rate G=1 tOR Overload recovery time VIN × gain = VS 12 kHz 0.005 V/µs 250 µs POWER SUPPLY VS Specified voltage range IQ Quiescent current 1.8 IO = 0 mA, at VS = 5.5 V 800 5.5 V 1300 nA TEMPERATURE TA 6 Specified range –40 85 °C Operating range –40 125 °C Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TLV369 TLV2369 TLV369, TLV2369 www.ti.com SBOS757 – MAY 2016 6.7 Typical Characteristics at TA = 25°C, VS = 5 V, and RL = 100 kΩ connected to VS / 2 (unless otherwise noted) 100 Normalized Offset Voltage (μV) 80 60 40 1 mV/div 20 0 –20 –40 –60 –0.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4 4.2 4.4 4.6 4.8 5 5.2 –80 –100 Time (500 ms/div) Common-Mode Voltage (V) 10 typical units shown, VS = 5 V Figure 2. 0.1-Hz to 10-Hz Noise Figure 1. Normalized Offset Voltage vs Common-Mode Voltage 140 120 Gain RL = 10 kΩ RL = 100 kΩ 2.5 80 60 90 40 AOL (μV/V) 135 Phase (°) 100 Gain (dB) 3 180 2 1.5 1 Phase 20 45 0.5 0 –20 0.001 0.01 0.1 1 10 100 1k 0 0 10k 20k –75 –50 0 –25 25 50 75 100 125 Temperature (°C) Frequency (Hz) VS = 5.5 V Figure 3. Open-Loop Gain and Phase vs Frequency Figure 4. Open-Loop Gain vs Temperature 120 Output Voltage Swing-from-Rail (mV) 25 CMRR (dB) 100 80 60 40 20 0 10 100 1k 10k 20k 20 RL = 10 kΩ 15 10 5 0 -5 -10 RL = 10 kΩ -15 -20 -25 –75 –50 –25 0 25 50 75 100 125 Frequency (Hz) Temperature (°C) Figure 5. Common-Mode Rejection Ratio vs Frequency Figure 6. Output Voltage Swing from Rail vs Temperature Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TLV369 TLV2369 7 TLV369, TLV2369 SBOS757 – MAY 2016 www.ti.com Typical Characteristics (continued) 3 10k 2.5 1k Input Bias Current (pA) Maximum VOUT (V) at TA = 25°C, VS = 5 V, and RL = 100 kΩ connected to VS / 2 (unless otherwise noted) 2 1.5 1 0.5 100 10 1 0.1 0 0.01 100 1k 2k –50 –25 Frequency (Hz) 0 25 50 75 100 125 Temperature (°C) Figure 7. Maximum Output Voltage vs Frequency Figure 8. Input Bias Current vs Temperature 20 10G 18 1G 16 Overshoot (%) ZO (Ω) 100k 10k 1k 14 12 G = –1 10 G=1 8 6 4 100 2 10 0 0 10 100 1k 10k 100k 1G 10 100 Frequency (Hz) Capacitive Load (pF) Figure 10. Small-Signal Overshoot vs Capacitive Load 20 mV/div 500 mV/div Figure 9. Open-Loop Output Impedance vs Frequency Time (100 μs/div) Time (250 μs/div) CL = 20 pF Figure 11. Small-Signal Step Response 8 Figure 12. Large-Signal Step Response Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TLV369 TLV2369 TLV369, TLV2369 www.ti.com SBOS757 – MAY 2016 Typical Characteristics (continued) at TA = 25°C, VS = 5 V, and RL = 100 kΩ connected to VS / 2 (unless otherwise noted) 1 V/div Input Output Time (500 μs/div) Figure 13. Overload Recovery Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TLV369 TLV2369 9 TLV369, TLV2369 SBOS757 – MAY 2016 www.ti.com 7 Detailed Description 7.1 Overview The TLVx369 family of operational amplifiers minimizes power consumption and operates on supply voltages as low as 1.8 V. The zero-crossover distortion circuitry enables high linearity over the full input common-mode range, achieving true rail-to-rail input from a 1.8-V to 5.5-V single supply. 7.2 Functional Block Diagram V+ Low-Noise Charge Pump Bias Circuitry +IN -IN OUT Input Stage Load Bias Circuitry V- 10 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TLV369 TLV2369 TLV369, TLV2369 www.ti.com SBOS757 – MAY 2016 7.3 Feature Description 7.3.1 Operating Voltage The TLV369 series os op amps are fully specified and tested from 1.8 V to 5.5 V (±0.9 V to ±2.75 V). Parameters that vary significantly with supply voltage are described in the Typical Characteristics section. 7.3.2 Input Common-Mode Voltage Range The TLV369 family is designed to eliminate the input offset transition region typically present in most rail-to-rail, complementary-stage operational amplifiers, allowing the TLV369 family of amplifiers to provide superior common-mode performance over the entire input range. The input common-mode voltage range of the TLV369 family typically extends to each supply rail. CMRR is specified from the negative rail to the positive rail; see Figure 1, Normalized Offset Voltage vs Common-Mode Voltage. 7.3.3 Protecting Inputs from Overvoltage Input currents are typically 10 pA. However, large inputs (greater than 500 mV beyond the supply rails) can cause excessive current to flow in or out of the input pins. Therefore, in addition to keeping the input voltage between the supply rails, the input current must also be limited to less than 10 mA. This limiting is easily accomplished with an input resistor, as shown in Figure 14. A current-limiting resistor is required if the input voltage exceeds the supply rails by ³ 0.5 V. 5V IOVERLOAD 10 mA, max TLV369 VOUT VIN 5 kW Copyright © 2016, Texas Instruments Incorporated Figure 14. Input Current Protection for Voltages That Exceed the Supply Voltage 7.4 Device Functional Modes The TLV369 family has a single functional mode. These devices are powered on as long as the power-supply voltage is between 1.8 V (±0.9 V) and 5.5 V (±2.75 V). Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TLV369 TLV2369 11 TLV369, TLV2369 SBOS757 – MAY 2016 www.ti.com 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information When designing for ultra-low power, choose system components carefully. To minimize current consumption, select large-value resistors. Any resistors can react with stray capacitance in the circuit and the input capacitance of the operational amplifier. These parasitic RC combinations can affect the stability of the overall system. Use of a feedback capacitor assures stability and limits overshoot or gain peaking. 8.2 Typical Application A typical application for an operational amplifier is an inverting amplifier, as shown in Figure 15. An inverting amplifier takes a positive voltage on the input and outputs a signal inverted to the input, making a negative voltage of the same magnitude. In the same manner, the amplifier also makes negative input voltages positive on the output. In addition, amplification can be added by selecting the input resistor RI and the feedback resistor RF. RF VSUP+ RI VOUT + VIN VSUPCopyright © 2016, Texas Instruments Incorporated Figure 15. Application Schematic 8.2.1 Design Requirements The supply voltage must be chosen to be larger than the input voltage range and the desired output range. The limits of the input common-mode range (VCM) and the output voltage swing to the rails (VO) must also be considered. For instance, this application scales a signal of ±0.5 V (1 V) to ±1.8 V (3.6 V). Setting the supply at ±2.5 V is sufficient to accommodate this application. 12 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TLV369 TLV2369 TLV369, TLV2369 www.ti.com SBOS757 – MAY 2016 Typical Application (continued) 8.2.2 Detailed Design Procedure Determine the gain required by the inverting amplifier using Equation 1 and Equation 2: VOUT AV VIN AV 1.8 0.5 3.6 (1) (2) When the desired gain is determined, choose a value for RI or RF. Choosing a value in the kilohm range is desirable for general-purpose applications because the amplifier circuit uses currents in the milliamp range. This milliamp current range ensures that the device does not draw too much current. The trade-off is that very large resistors (100s of kilohms) draw the smallest current but generate the highest noise. Very small resistors (100s of ohms) generate low noise but draw high current. This example uses 10 kΩ for RI, meaning 36 kΩ is used for RF. These values are determined by Equation 3: RF AV RI (3) 8.2.3 Application Curve 2 1.5 Input Output Voltage (V) 1 0.5 0 -0.5 -1 -1.5 -2 Time Figure 16. Inverting Amplifier Input and Output Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TLV369 TLV2369 13 TLV369, TLV2369 SBOS757 – MAY 2016 www.ti.com 8.3 System Examples 8.3.1 Battery Monitoring The low operating voltage and quiescent current of the TLV369 series make the family an excellent choice for battery-monitoring applications, as shown in Figure 17. RF R1 +IN + IBIAS VBATT RBIAS -IN TLV369 OUT VSTATUS VREF R2 REF1112 Copyright © 2016, Texas Instruments Incorporated Figure 17. Battery Monitor In this circuit, VSTATUS is high as long as the battery voltage remains above 2 V. A low-power reference is used to set the trip point. Resistor values are selected as follows: 1. Selecting RF: Select RF such that the current through RF is approximately 1000 times larger than the maximum bias current over temperature, as given by Equation 4: VREF RF = 1000 (IBMAX) 1.2 V 1000 (50 pA) = 24 MW » 20 MW 2. Choose the hysteresis voltage, VHYST. For battery-monitoring applications, 50 mV is adequate. 3. Calculate R1 as calculated by Equation 5: VHYST R1 = RF = 20 MW 50 mV = 420 kW 2.4 V VBATT = (4) (5) 4. Select a threshold voltage for VIN rising (VTHRS) = 2.0 V. 5. Calculate R2 as given by Equation 6: 1 R2 = VTHRS - 1 - 1 VBATT R1 R1 ( ) 1 = ( 2V 1.2 V ´ 420 kW ) - 1 1 420 kW 20 MW = 650 kW (6) 6. Calculate RBIAS: The minimum supply voltage for this circuit is 1.8 V. The REF1112 has a current requirement of 1.2 μA (max). Providing the REF1112 with 2 μA of supply current assures proper operation. Therefore, RBIAS is as given by Equation 7. V RBIAS = BATTMIN = 1.8 V = 0.9 MW IBIAS 2 mA (7) 14 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TLV369 TLV2369 TLV369, TLV2369 www.ti.com SBOS757 – MAY 2016 System Examples (continued) 8.3.2 Window Comparator Figure 18 shows the TLV2369 used as a window comparator. The threshold limits are set by VH and VL, with VH greater than VL. When VIN is less than VH, the output of A1 is low. When VIN is greater than VL, the output of A2 is low. Therefore, both op amp outputs are at 0 V as long as VIN is between VH and VL. This architecture results in no current flowing through either diode, Q1 is in cutoff, with the base voltage at 0 V, and VOUT forced high. 3V 3V R1 VH A1 1/2 TLV2369 R2 D1 (2) 3V R7 5.1 kW RIN VIN VOUT R5 10 kW (1) 2 kW (3) Q1 R6 5.1 kW 3V 3V A2 R3 VL 1/2 TLV2369 D2 (2) R4 Copyright © 2016, Texas Instruments Incorporated Figure 18. TLV2369 as a Window Comparator If VIN falls below VL, the output of A2 is high, current flows through D2, and VOUT is low. Likewise, if VIN rises above VH, the output of A1 is high, current flows through D1, and VOUT is low. The window comparator threshold voltages are set as shown by Equation 8 and Equation 9: R2 VH = R1 + R2 (8) VL = R4 R3 + R4 (9) 9 Power Supply Recommendations The TLV369 family is specified for operation from 1.8 V to 5.5 V (±0.9 V to ±2.75 V); many specifications apply from –40°C to +125°C. The Typical Characteristics section presents parameters that can exhibit significant variance with regard to operating voltage or temperature. CAUTION Supply voltages larger than 7 V can permanently damage the device (see the Absolute Maximum Ratings table). Place 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or highimpedance power supplies. For more detailed information on bypass capacitor placement; see the Layout Guidelines section. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TLV369 TLV2369 15 TLV369, TLV2369 SBOS757 – MAY 2016 www.ti.com 10 Layout 10.1 Layout Guidelines For best operational performance of the device, use good printed circuit board (PCB) layout practices, including: • Noise can propagate into analog circuitry through the power pins of the circuit as a whole and the operational amplifier. Use bypass capacitors to reduce the coupled noise by providing low-impedance power sources local to the analog circuitry. – Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as close to the device as possible. A single bypass capacitor from V+ to ground is applicable for singlesupply applications. • Separate grounding for analog and digital portions of the circuitry is one of the simplest and most effective methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes. A ground plane helps distribute heat and reduces electromagnetic interference (EMI) noise pickup. Make sure to physically separate digital and analog grounds, paying attention to the flow of the ground current. For more detailed information, see Circuit Board Layout Techniques, SLOA089. • To reduce parasitic coupling, run the input traces as far away from the supply or output traces as possible. If these traces cannot be kept separate, crossing the sensitive trace perpendicularly is much better than crossing in parallel with the noisy trace. • Place the external components as close to the device as possible. Keep RF and RG close to the inverting input in order to minimize parasitic capacitance, as shown in Figure 19. • Keep the length of input traces as short as possible. Always remember that the input traces are the most sensitive part of the circuit. • Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce leakage currents from nearby traces that are at different potentials. 10.2 Layout Example VS+ Run the input traces as far away from the supply VIN lines as possible. VS± +IN V+ V± Use a low-ESR, ceramic bypass capacitor. GND Use a low-ESR, ceramic bypass capacitor. RG OUT ±IN VOUT GND RF Place components close to the device and to each other to reduce parasitic errors. Copyright © 2016, Texas Instruments Incorporated Figure 19. Operational Amplifier Board Layout for Noninverting Configuration VIN RG + VOUT RF Copyright © 2016, Texas Instruments Incorporated Figure 20. Schematic Representation of Figure 19 16 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TLV369 TLV2369 TLV369, TLV2369 www.ti.com SBOS757 – MAY 2016 11 Device and Documentation Support 11.1 Documentation Support 11.1.1 Related Documentation The following documents are relevant to using the TLVx369, and are recommended for reference and available for download at www.ti.com, unless otherwise noted. • REF1112 Data Sheet, SBOS283 • Circuit Board Layout Techniques, SLOA089 • Handbook of Operational Amplifier Applications, SBOA092 • Analog Engineer's Pocket Reference, SLWY038 11.1.1.1 Related Links Table 1 lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy. Table 1. Related Links PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY TLV369 Click here Click here Click here Click here Click here TLV2369 Click here Click here Click here Click here Click here 11.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.3 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 11.4 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 11.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TLV369 TLV2369 17 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TLV2369IDGKR ACTIVE VSSOP DGK 8 2500 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 13JV TLV2369IDGKT ACTIVE VSSOP DGK 8 250 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 13JV TLV2369IDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 TL2369 TLV369IDCKR ACTIVE SC70 DCK 5 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 12K TLV369IDCKT ACTIVE SC70 DCK 5 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 12K (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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