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TPS2H160-Q1
SLVSD74D – DECEMBER 2015 – REVISED DECEMBER 2019
TPS2H160-Q1 40-V, 160-mΩ Dual-Channel Smart High-Side Switch
1 Features
•
•
1
•
•
•
•
•
•
•
•
Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to 125°C
Ambient Operating Temperature Range
– Device HBM ESD Classification Level H2
– Device CDM ESD Classification Level C4B
Functional safety capable
– Documentation available to aid functional
safety system design
Dual-Channel 160-mΩ Smart High-Side Switch
With Full Diagnostics
– Version A: Open-Drain Status Output
– Version B: Current-Sense Analog Output
Wide Operating Voltage 3.4 to 40 V
Ultralow Standby Current, < 500 nA
High-Accuracy Current Sense:
– ±17% Under >25-mA Load
Adjustable Current Limit With External Resistor
±15% Under >500-mA Load
Protection:
– Short-to-GND Protection by Current Limit
(Internal or External)
– Thermal Shutdown With Latch-Off Option and
Thermal Swing
– Inductive Load Negative Voltage Clamp With
Optimized Slew Rate
– Loss of GND and Loss of Battery Protection
Typical Application Schematic
3.4-V to 40-V
Supply Voltage
•
Diagnostic:
– Overcurrent and Short to Ground Detection
– Open-Load and Short-to-Battery Detection
– Global Fault for Fast Interrupt
16-Pin Thermally-Enhanced PWP Package
2 Applications
•
•
•
Dual-Channel LED Drivers, Bulb Drivers
Dual-Channel High-Side Switches for SubModules
Dual-Channel High-Side Relay, Solenoid Drivers
3 Description
The TPS2H160-Q1 family is a fully-protected dualchannel smart high-side switch, with integrated 160mΩ NMOS power FETs.
Full diagnostics and high-accuracy current-sense
features enable intelligent control of the load.
An external adjustable current limit improves reliability
of the whole system by limiting the inrush or overload
current.
Device Information(1)
PART NUMBER
TPS2H160-Q1 Ver. A
TPS2H160-Q1 Ver. B
PACKAGE
HTSSOP (16)
CHANNELS
2
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Driving a Capacitive Load With Adjustable
Current Limit
VS
IN1, 2
LED Strings,
Small Power Bulbs
DIAG_EN
OUT1
THER
Solenoids, Valves, Relays
FAULT
Sub-Modules:
Cameras, Sensors, Displays
SEL ST1
CS
OUT2
ST2
General Resistive, Capacitive,
Inductive Loads
CL
Overcurrent is clamped
at the set value of 1 A.
GND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS2H160-Q1
SLVSD74D – DECEMBER 2015 – REVISED DECEMBER 2019
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
4
7.1
7.2
7.3
7.4
7.5
7.6
7.7
4
5
5
5
5
7
9
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information .................................................
Electrical Characteristics...........................................
Switching Characteristics ..........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 12
8.1 Overview ................................................................. 12
8.2 Functional Block Diagram ....................................... 13
8.3 Feature Description................................................. 13
8.4 Device Functional Modes........................................ 24
9
Application and Implementation ........................ 26
9.1 Application Information............................................ 26
9.2 Typical Application ................................................. 26
10 Power Supply Recommendations ..................... 29
11 Layout................................................................... 30
11.1 Layout Guidelines ................................................. 30
11.2 Layout Examples................................................... 30
12 Device and Documentation Support ................. 32
12.1
12.2
12.3
12.4
12.5
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
32
32
32
32
32
13 Mechanical, Packaging, and Orderable
Information ........................................................... 32
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (February 2018) to Revision D
•
Page
Added Functional safety capable link to the Features section ............................................................................................... 1
Changes from Revision B (August 2016) to Revision C
Page
•
Added footnote 2 to the Electrical Characteristics table......................................................................................................... 7
•
Added reverse current protection information to the Reverse-Current Protection section .................................................. 23
Changes from Revision A (June 2016) to Revision B
Page
•
Changed ESD HBM classification level ................................................................................................................................. 1
•
Added a key graqphic on the first page.................................................................................................................................. 1
•
Changed ESD Ratings table .................................................................................................................................................. 5
•
Changed Figure 7 .................................................................................................................................................................. 9
Changes from Original (December 2015) to Revision A
•
2
Page
Changed data sheet from PRODUCT PREVIEW to PRODUCTION DATA .......................................................................... 1
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SLVSD74D – DECEMBER 2015 – REVISED DECEMBER 2019
5 Device Comparison Table
PART NUMBER
FAULT REPORTING MODE
TPS2H160-Q1 Version A
Open-drain digital output
TPS2H160-Q1 Version B
Current-sense analog output
6 Pin Configuration and Functions
PWP PowerPAD™ Package
16-Pin HTSSOP With Exposed Thermal Pad
TPS2H160-Q1 Version A Top View
IN1
1
16
OUT1
IN2
2
15
OUT1
DIAG_EN
3
14
VS
NC
4
13
VS
12
OUT2
Thermal
ST1
5
ST2
6
11
OUT2
CL
7
10
NC
GND
8
9
Pad
THER
Not to scale
NC – No internal connection
PWP PowerPAD Package
16-Pin HTSSOP With Exposed Thermal Pad
TPS2H160-Q1 Version B Top View
IN1
1
16
OUT1
IN2
2
15
OUT1
DIAG_EN
3
14
VS
FAULT
4
13
VS
12
OUT2
Thermal
SEL
5
CS
6
11
OUT2
CL
7
10
NC
GND
8
9
Pad
THER
Not to scale
NC – No internal connection
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SLVSD74D – DECEMBER 2015 – REVISED DECEMBER 2019
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Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
VERSION A
VERSION B
CL
7
7
O
Adjustable current limit. Connect to device GND if external current limit is not
used.
CS
—
6
O
Current-sense output
DIAG_EN
3
3
I
Enable-disable pin for diagnostics; internal pulldown
FAULT
—
4
O
Global fault report with open-drain structure, ORed logic for dual-channel fault
conditions
GND
8
8
—
Ground pin
IN1
1
1
I
Input control for channel 1 activation; internal pulldown
Input control for channel 2 activation; internal pulldown
IN2
2
2
I
NC
4, 10
10
—
No internal connection
ST1
5
—
O
Open-drain diagnostic status output for channel 1
ST2
6
—
O
Open-drain diagnostic status output for channel 2
SEL
—
5
I
CS channel-selection bit; internal pulldown
THER
9
9
I
Thermal shutdown behavior control, latch off or auto-retry; internal pulldown
OUT1
15, 16
15, 16
O
Output of the channel 1 high side-switch, connected to the load
OUT2
11, 12
11, 12
O
Output of the channel 2 high side-switch, connected to the load
VS
13, 14
13, 14
I
Power supply
—
—
—
Thermal
pad
Connect to device GND or leave floating
7 Specifications
7.1 Absolute Maximum Ratings
over operating ambient temperature range (unless otherwise noted)
(1) (2)
MIN
MAX
UNIT
48
V
–100
250
mA
–0.3
7
V
Current on INx, DIAG_EN, SEL, and THER pins
–10
—
mA
Voltage on STx or FAULT pins
–0.3
7
V
Current on STx or FAULT pins
–30
10
mA
Voltage on CS pin
–2.7
7
V
Current on CS pin
—
30
mA
Voltage on CL pin
–0.3
7
V
Current on CL pin
—
6
mA
Supply voltage
Reverse polarity voltage
t < 400 ms
(3)
Current on GND pin
–36
t < 2 minutes
Voltage on INx, DIAG_EN, SEL, and THER pins
Inductive load switch-off energy dissipation, single pulse, single channel (4)
V
—
40
mJ
Operating junction temperature
–40
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
(2)
(3)
(4)
4
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to the ground plane.
Reverse polarity condition: t < 60 s, reverse current < IR(2), VINx = 0 V, all channels reverse, GND pin 1-kΩ resistor in parallel with diode.
Test condition: VVS = 13.5 V, L = 8 mH, R = 0 Ω, TJ = 150°C. FR4 2s2p board, 2 × 70-μm Cu, 2 x 35-µm Cu. 600 mm2 thermal pad
copper area.
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SLVSD74D – DECEMBER 2015 – REVISED DECEMBER 2019
7.2 ESD Ratings
VALUE
Human-body model (HBM), per AEC
Q100-002 (1)
V(ESD)
(1)
Electrostatic discharge
Charged-device model (CDM), per AEC
Q100-011
All pins
±4000
All pins
±750
Corner pins (1, 8, 9, and
16)
±750
UNIT
V
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
7.3 Recommended Operating Conditions
over operating ambient temperature range (unless otherwise noted)
VVS
TA
MIN
MAX
Supply operating voltage
4
40
V
Voltage on INx, DIAG EN, SEL, and THER pins
0
5
V
Voltage on STx and FAULT pins
0
5
V
Nominal dc load current
0
2.5
A
–40
125
°C
Operating ambient temperature
UNIT
7.4 Thermal Information
TPS2H160-Q1
THERMAL METRIC
(1)
PWP (HTSSOP)
UNIT
16 PINS
RθJA
Junction-to-ambient thermal resistance
40.4
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
26.5
°C/W
RθJB
Junction-to-board thermal resistance
21.1
°C/W
ψJT
Junction-to-top characterization parameter
0.8
°C/W
ψJB
Junction-to-board characterization parameter
20.9
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
1.6
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Electrical Characteristics
5 V < VVS < 40 V; −40°C < TJ < 150°C, unless otherwise specified)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OPERATING VOLTAGE
VVS(nom)
Nominal operating voltage
VVS(uvr)
Undervoltage turnon
VVS rises up
VVS(uvf)
Undervoltage shutdown
VVS falls down
V(uv,hys)
Undervoltage shutdown, hysteresis
40
V
3.5
4
3.7
4
V
3
3.2
3.4
V
0.5
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Electrical Characteristics (continued)
5 V < VVS < 40 V; −40°C < TJ < 150°C, unless otherwise specified)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OPERATING CURRENT
Nominal operating current (1)
I(op)
I(off)
Standby current
VVS = 13.5 V, VINx = 5 V, VDIAG_EN = 0 V, IOUTx = 0.5 A,
current limit = 2 A, all channels on
7
mA
VVS = 13.5 V, VINx = VDIAG_EN = VCS = VCL = VOUTx =
THER = 0 V,
TJ = 25°C
0.5
VVS = 13.5 V, VINx = VDIAG_EN = VCS = VCL = VOUTx =
THER = 0 V,
TJ = 125°C
5
6
mA
15
ms
0.5
µA
I(off,diag)
Standby current with diagnostic
enabled
VVS = 13.5 V, VINx = 0 V, VDIAG_EN = 5 V, VVS – VOUTx >
V(ol,off), not in open-load mode
t(off,diag)
Standby mode deglitch time (1)
IN from high to low, if deglitch time > t(off,deg), the device
enters into standby mode.
Ilkg(out)
Output leakage current in off-state
VVS = 13.5 V, VINx = VDIAG_EN = VOUTx = 0
µA
10
12.5
POWER STAGE
rDS(on)
On-state resistance (1)
ICL(int)
Internal current limit
ICL(TSD)
Current limit during thermal
shutdown (1)
VDS(clamp)
Drain-to-source internal clamp voltage
VVS ≥ 3.5 V, TJ = 25°C
155
VVS ≥ 3.5 V, TJ = 150°C
280
Internal current limit value, CL pin connected to GND
9
Internal current limit value under thermal shutdown
15
6.8
External current limit value under thermal shutdown. The
percentage of the external current limit setting value
mΩ
A
A
60%
45
65
V
0.9
V
OUTPUT DIODE CHARACTERISTICS
VF
Drain−source diode voltage
Continuous reverse current from
source to drain (1)
IR(1), IR(2)
IN = 0, IOUTx = −0.15 A.
0.3
t < 60 s, VINx = 0 V, TJ = 25°C, single channel reversed,
short-to-battery condition
0.7
2.5
A
t < 60 s, VINx = 0 V, GND pin 1-kΩ resistor in parallel with
diode. TJ = 25°C. Reverse-polarity condition, all channels
reversed
2
LOGIC INPUT (INx, DIAG_EN, SEL, THER)
VIH
Logic high-level voltage
VIL
Logic low-level voltage
R(logic,pd)
Logic-pin pulldown resistor
2
V
0.8
INx, SEL, THER, VINx = VSEL = VTHER = 5 V
100
175
230
DIAG_EN. VVS = VDIAG_EN = 5 V
150
275
350
V
kΩ
DIAGNOSTICS
Ilkg(GND_loss)
Output leakage current under GND
loss condition
V(ol,off)
Open-load detection threshold
IN = 0 V, when VVS – VOUTx < V(ol,off), duration longer than
t(ol,off), then open load is detected, off state
1.6
td(ol,off)
Open-load detection threshold deglitch IN = 0 V, when VVS – VOUTx < V(ol,off) , duration longer than
time (see Figure 3)
t(ol,off), then open load is detected, off state
400
I(ol,off)
Off-state output sink current
VINx = 0 V, VDIAG_EN = 5 V, VVS = VOUTx = 13.5 V, TJ =
125°C, open load
VOL(STx)
Status low-output voltage
ISTx = 2 mA, version A only
0.2
V
VOL(FAULT)
Fault low-output voltage
IFAULT = 2 mA, version B only
0.2
V
tCL(deg)
Deglitch time when current limit
occurs (1)
VINx = VDIAG_EN = 5 V, the deglitch time from current limit
toggling to FAULT, STx, CS report.
180
µs
T(SD)
Thermal shutdown threshold (1)
T(SD,rst)
Thermal shutdown status reset
threshold (1)
T(SW)
T(hys)
(1)
6
600
100
µA
2.6
V
800
µs
–75
µA
80
160
175
°C
155
°C
Thermal swing shutdown threshold (1)
60
°C
Hysteresis for resetting the thermal
shutdown or thermal swing (1)
10
°C
Value specified by design, not subject to production test
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Electrical Characteristics (continued)
5 V < VVS < 40 V; −40°C < TJ < 150°C, unless otherwise specified)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CURRENT SENSE (Version B) AND CURRENT LIMIT
K(CS)
Current-sense ratio
K(CL)
Current-limit ratio
VCL(th)
Current limit internal threshold (1)
dK(CS) /
K(CS)
dK(CL) / K(CL)
Current-sense accuracy, (ICS × K(CS) –
IOUTx) /IOUTx × 100
External current limit accuracy (2),
(IOUTx – ICL × K(CL)) × 100 / (ICL × K(CL))
290
2500
0.8
–85%
85%
VVS = 13.5 V, IOUTx ≥ 25 mA
–17%
17%
VVS = 13.5 V, IOUTx ≥ 50 mA
–8%
8%
VVS = 13.5 V, IOUTx ≥ 100 mA
–4%
4%
VVS = 13.5 V, IOUTx ≥ 0.5 A
–3%
3%
VVS = 13.5 V, I(limit) ≥ 0.25 A
–20%
20%
VVS = 13.5 V, 0.5 A ≤ I(limit) ≤ 7 A
–15%
15%
VVS ≥ 6.5 V
0
4
5 V ≤ VVS < 6.5 V
0
VVS –
2.5
VVS ≥ 6.5 V, VCS(lin) ≤ 4 V
0
2.5
5 V ≤ VVS < 6.5 V, VCS(lin) ≤ VVS – 2.5 V
0
2.5
4.5
6.5
V
Min(VVS – 2,
4.5)
6.5
V
VCS(lin)
Current-sense voltage linear range (1)
IOUTx(lin)
Output-current linear range (1)
VCS(H)
Current sense pin output voltage (1)
ICS(H)
Current-sense pin output current
VCS = 4.5 V, VVS = 13.5 V
Ilkg(CS)
Current-sense leakage current in
disabled mode
VDIAG_EN = 0 V, TJ =125ºC
VVS ≥ 7 V, fault mode
(2)
V
VVS = 13.5 V, IOUTx ≥ 5 mA
5 V ≤ VVS < 7 V, fault mode
15
V
A
mA
0.5
µA
External current limit accuracy is only applicable to overload conditions greater than 1.5 × the current limit setting
7.6 Switching Characteristics
MIN
TYP
MAX
td(on)
Delay time, VOUTx 10% after VINx↑ (See
Figure 1.)
PARAMETER
VVS = 13.5 V, VDIAG_EN = 5 V, IOUTx = 0.5 A, IN rising
edge to 10% of VOUTx
TEST CONDITIONS
UNIT
20
50
90
µs
td(off)
Delay time, VOUTx 90% after VINx↓ (See
Figure 1.)
VVS = 13.5 V, VDIAG_EN = 5 V, IOUTx = 0.5 A, IN falling
edge to 90% of VOUTx
20
50
90
µs
dV/dt(on)
Turnon slew rate
VVS = 13.5 V, VDIAG_EN = 5 V, IOUTx = 0.5 A, VOUTx from
10% to 90%
0.1
0.3
0.55
V/µs
dV/dt(off)
Turnoff slew rate
VVS = 13.5 V, VDIAG_EN = 5 V, IOUTx = 0.5 A, VOUTx from
90% to 10%
0.1
0.35
0.55
V/µs
td(match)
td(rise) – td(fall) (See Figure 1.)
VVS = 13.5 V, IL = 0.5A. td, rise is the IN rising edge to
VOUTx = 90%.
td(fall) is the IN falling edge to VOUTx = 10%.
–50
50
µs
CURRENT-SENSE CHARACTERISTICS (See Figure 2.)
tCS(off1)
CS settling time from DIAG_EN disabled (1)
VVS = 13.5 V, VINx = 5 V, IOUTx = 0.5 A. current limit = 2 A.
DIAG_EN falling edge to 10% of VCS.
20
µs
tCS(on1)
CS settling time from DIAG_EN enabled (1)
VVS = 13.5 V, VINx = 5 V, IOUTx = 0.5 A. current limit is 2
A. DIAG_EN rising edge to 90% of VCS.
20
µs
tCS(off2)
CS settling time from IN falling edge
VVS = 13.5 V, VDIAG_EN = 5 V, IOUTx = 0.5 A. current limit =
2 A. IN falling edge to 10% of VCS
20
100
µs
tCS(on2)
CS settling time from IN rising edge
VVS = 13.5 V, VDIAG_EN = 5 V, IOUTx = 0.5 A. current limit =
2 A. IN rising edge to 90% of VCS
50
150
µs
tSEL
Multi-sense transition delay from channel to
channel
VDIAG_EN = 5 V, current sense output delay when multisense pin SEL transitions from channel to channel
50
µs
(1)
Value specified by design, not subject to production test
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V INx
90%
90%
dV/dt(off)
dV/dt(on)
VOUTx
10%
10%
td(on)
td(off)
td(fall)
td(rise)
Figure 1. Output Delay Characteristics
VINx
IOUTx
VDIAG_EN
VCS
tCS(on2)
tCS(off1)
tCS(on1)
tCS(off2)
Figure 2. CS Delay Characteristics
Open Load
VINx
VCS(H)
VCS
td(ol,off)
VSTx,VFAULT
td(ol,off)
Figure 3. Open-Load Blanking-Time Characteristics
SEL
tSEL
VCS
VCS(CH 2)
VCS(CH 1)
Figure 4. Multi-Sense Transition Delay
8
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7.7 Typical Characteristics
3.8
1.6
IN1 High
IN1 Low
IN2 High
IN2 Low
1.5
3.6
VVS Rising
VVS Falling
3.5
INx Voltage (V)
UVLO Voltage (V)
3.7
3.4
3.3
1.4
1.3
1.2
1.1
3.2
3.1
-45 -30 -15
0
1
-45
15 30 45 60 75 90 105 120 135
Ambient Temperature (qC)
D001
-30
-15
Figure 5. UVLO Voltage Threshold
90
105 120
D002
1.6
DIAG_EN High
DIAG_EN Low
1.6
SEL High
SEL Low
1.5
1.5
SEL Voltage (V)
Diag_EN Voltage (V)
15 30 45 60 75
Ambient Temperature (qC)
Figure 6. INx Voltage Threshold
1.7
1.4
1.3
1.2
1.4
1.3
1.2
1.1
1.1
1
-40
0
-20
0
20
40
60
80
Ambient Temperature (ºC)
100
1
-45
120
-30
-15
0
D003
15 30 45 60 75
Ambient Temperature (qC)
90
105 120
D004
A
Figure 7. DIAG_EN Voltage Threshold
Figure 8. SEL Voltage Threshold
59
0.9
OUT1
OUT2
0.85
58
Clamp Voltage (V)
Diode Voltage (V)
0.8
0.75
0.7
0.65
0.6
57
56
55
54
53
0.55
0.5
-45
Ch 1
Ch 2
-30
-15
0
15 30 45 60 75
Ambient Temperature (qC)
90
105 120
52
-45
-30
D005
Figure 9. Body-Diode Forward Voltage
-15
0
15 30 45 60 75
Ambient Temperature (qC)
90
105 120
D001
Figure 10. Drain-to-Source Clamp Voltage
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Typical Characteristics (continued)
0.25
0.25
3.5 V
5V
13.5 V
40 V
0.2
On-Resistance (:)
On-Resistance (:)
0.2
0.15
0.1
0.15
0.1
0.05
0.05
0
-45
-30
-15
0
15 30 45 60 75
Ambient Temperature (qC)
90
0
-45
105 120
-30
-15
0
D007
Figure 11. Channel-1 FET On-Resistance
15 30 45 60 75
Ambient Temperature (qC)
90
105 120
D008
Figure 12. Channel-2 FET On-Resistance
2
18
Ch 1
Ch 2
16
Ch 1
Ch 2
1.5
14
Current-Sense Ratio (%)
Current-Sense Ratio (%)
3.5 V
5V
13.5 V
40 V
12
10
8
6
4
1
0.5
0
-0.5
2
0
-45
-30
-15
0
15 30 45 60 75
Ambient Temperature (qC)
90
-1
-45
105 120
Figure 13. Current-Sense Ratio at 5 mA
-15
0
15 30 45 60 75
Ambient Temperature (qC)
90
105 120
D010
Figure 14. Current-Sense Ratio at 25 mA
2
1
Ch 1
Ch 2
Ch 1
Ch 2
0.8
Current-Sense Ratio (%)
1.5
Current-Sense Ratio (%)
-30
D009
1
0.5
0
0.6
0.4
0.2
0
-0.2
-0.4
-0.5
-0.6
-1
-45
-30
-15
0
15 30 45 60 75
Ambient Temperature (qC)
90
105 120
-30
D011
Figure 15. Current-Sense Ratio at 50 mA
10
-0.8
-45
-15
0
15 30 45 60 75
Ambient Temperature (qC)
90
105 120
D012
Figure 16. Current-Sense Ratio at 100 mA
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Typical Characteristics (continued)
6
0
Ch 1
Ch 2
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
2
0
-2
-4
-6
-8
-0.8
-0.9
-45
Ch 1
Ch 2
4
Current-Limit Ratio (%)
Current-Sense Ratio (%)
-0.1
-30
-15
0
15 30 45 60 75
Ambient Temperature (qC)
90
-10
-45
105 120
-30
-15
0
D013
Figure 17. Current-Sense Ratio at 500 mA
15 30 45 60 75
Ambient Temperature (qC)
90
105 120
D014
Figure 18. Current-Limit Ratio at 0.25 A
4
5
Ch 1
Ch 2
4
Ch 1
Ch 2
3
Current-Limit Ratio (%)
Current-Limit Ratio (%)
3
2
1
0
-1
-2
2
1
0
-1
-2
-3
-3
-4
-5
-45
-30
-15
0
15 30 45 60 75
Ambient Temperature (qC)
90
105 120
-4
-45
-30
-15
D015
Current Limit Ratio (%)
Figure 19. Current-Limit Ratio at 0.5 A
3
2.5
2
1.5
1
0.5
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
-45
0
15 30 45 60 75
Ambient Temperature (qC)
90
105 120
D016
Figure 20. Current-Limit Ratio at 1 A
Ch 1
Ch 2
-30
-15
0
15 30 45 60 75
Ambient Temperature (qC)
90
105 120
D017
Figure 21. Current-Limit Ratio at 2 A
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8 Detailed Description
8.1 Overview
The TPS2H160-Q1 device is a smart high-side switch, with internal charge pump and dual-channel integrated
NMOS power FETs. Full diagnostics and high-accuracy current-sense features enable intelligent control of the
load. The adjustable current-limit function greatly improves the reliability of whole system. The device has two
versions with different diagnostic reporting, the open-drain digital output (version A) and the current-sense analog
output (version B).
For version A, the device implements the digital fault report with an open-drain structure. When a fault occurs,
the device pulls STx down to GND. A 3.3- or 5-V external pullup is required to match the microcontroller supply
level. The digital status of each channel can report individually, or globally by connecting the STx pins together.
For version B, high-accuracy current sense makes the diagnostics more accurate without further calibration. One
integrated current mirror can source 1 / K(CS) of the load current. The mirrored current flows into the CS-pin
resistor to become a voltage signal. K(CS) is a constant value across temperature and supply voltage. A wide
linear region from 0 V to 4 V allows a better real-time load-current monitoring. The CS pin can also report a fault
with pullup voltage of VCS(H).
The external high-accuracy current limit allows setting the current-limit value by applications. When overcurrent
occurs, the device improves system reliability by clamping the inrush current effectively. The device can also
save system cost by reducing the size of PCB traces and connectors, and the capacity of the preceding power
stage. Besides, the device also implements an internal current limit with a fixed value.
For inductive loads (relays, solenoids, valves), the device implements an active clamp between drain and source
to protect itself. During the inductive switching-off cycle, both the energy of the power supply and the load are
dissipated on the high-side switch. The device also optimizes the switching-off slew rate when the clamp is
active, which helps the system design by keeping the effects of transient power and EMI to a minimum.
The TPS2H160-Q1 device is a smart high-side switch for a wide variety of resistive, inductive, and capacitive
loads, including low-wattage bulbs, LEDs, relays, solenoids, heaters, and sub-modules.
12
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8.2 Functional Block Diagram
VS
Internal LDO
Internal Reference
Auxiliary Charge Pump
Temperature Sensor
Gate Driver
and
Charge Pump
2
INx
Output
Clamp
OUT1
Oscillator
Protection
and
Diagnostics
Current
Sense
Current-Sense
Mux
THER
CS
OUT2
SEL
CL
ESD
Protection
FAULT
Current Limit
Current Limit
Reference
DIAG_EN
GND
STx
Diagnosis
Temperature
Sensor
2
OTP
8.3 Feature Description
8.3.1 Pin Current and Voltage Conventions
For reference purposes throughout the data sheet, current directions on their respective pins are as shown by
the arrows in Figure 22. All voltages are measured relative to the ground plane.
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Feature Description (continued)
VINx
VSTx, VFAULT
VDIAG_EN
IINx
ISTx
IFAULT
IDIAG_EN
INx
IVS
VS
STx,
FAULT
DIAG_EN
IOUTx
OUTx
VCL
VCS
VTHER
ICL
ICS
ITHER
VVS
VOUTx
CL
CS
THER
ISEL
SEL
VSEL
GND
IGND
VGND
Ground Plane
Figure 22. Voltage and Current Conventions
8.3.2 Accurate Current Sense
High-accuracy current sense is implemented in the version-B device. It allows a better real-time monitoring effect
and more-accurate diagnostics without further calibration.
One integrated current mirror can source 1 / K(CS) of the load current, and the mirrored current flows into the
external current sense resistor to become a voltage signal. The current mirror is shared by the four channels.
K(CS) is the ratio of the output current and the sense current. It is a constant value across the temperature and
supply voltage. Each device is calibrated accurately during production, so post-calibration is not required. See
Figure 23 for more details.
VBAT
VS
IOUT / K(CS)
IOUT
FAULT
VCS(H)
OUTx
2´
CS
R(CS)
Figure 23. Current-Sense Block Diagram
14
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Feature Description (continued)
When a fault occurs, the CS pin also works as a fault report with a pullup voltage, VCS(H). See Figure 24 for more
details.
V CS
VCS(H)
VCS(lin)
Fault Report
Current Monitor
I OUTx
Normal Operating
On-State: Current Limit, The rmal Fault
Off-State: Open Load or Short to Batte r y
or Reverse Polarity
Figure 24. Current-Sense Output-Voltage Curve
Use Equation 1 to calculate R(CS).
VCS ´ K (CS)
V
R (CS) = CS =
I CS
I OUTx
(1)
Take the following points into consideration when calculating R(CS).
• Ensure VCS is within the current-sense linear region (VCS, IOUTx(lin)) across the full range of the load current.
Check R(CS) with Equation 2.
VCS(lin)
V
R (CS) = CS £
I CS
I CS
(2)
•
In fault mode, ensure ICS is within the source capacity of the CS pin (ICS(H)). Check R(CS) with Equation 3.
VCS(H,min)
V
R (CS) = CS ³
I CS
I CS(H,min)
(3)
8.3.3 Adjustable Current Limit
A high-accuracy current limit allows high reliability of the design. It protects the load and the power supply from
overstressing during short-circuit-to-GND or power-up conditions. The current limit can also save system cost by
reducing the size of PCB traces and connectors, and the capacity of the preceding power stage.
When a current-limit threshold is hit, a closed loop activates immediately. The output current is clamped at the
set value, and a fault is reported out. The device heats up due to the high power dissipation on the power FET. If
thermal shutdown occurs, the current limit is set to ICL(TSD) to reduce the power dissipation on the power FET.
See Figure 25 for more details.
The device has two current-limit thresholds.
• Internal current limit – The internal current limit is fixed at ICL(int). Tie the CL pin directly to the device GND for
large-transient-current applications.
• External adjustable current limit – An external resistor is used to set the current-limit threashold. Use the
Equation 4 to calculate the R(CL). VCL(th) is the internal band-gap voltage. K(CL) is the ratio of the output current
and the current-limit set value. It is constant across the temperature and supply voltage. The external
adjustable current limit allows the flexibility to set the current limit value by applications.
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Feature Description (continued)
I CL =
VCL(th)
R(CL)
R(CL) =
=
I OUT
K (CL)
VCL(th) ´ K (CL)
I OUT
(4)
VBAT
VS
IOUT / K(CL)
Internal Current Limit
‐
+
+
‐
V CL(th)
IOUT
+
2´
OUT
External Current Limit
‐
V CL(th)
+
CL
Figure 25. Current-Limit Block Diargam
Note that if using a GND network which causes a level shift between the device GND and board GND, the CL
pin must be connected with device GND.
For better protection from a hard short-to-GND condition (when the INx pins are enabled, a short to GND occurs
suddenly), the device implements a fast-trip protection to turn off the related channel before the current-limit
closed loop is set up. The fast-trip response time is less than 1 μs, typically. With this fast response, the device
can achieve better inrush current-suppression performance.
8.3.4 Inductive-Load Switching-Off Clamp
When switching an inductive load off, the inductive reactance tends to pull the output voltage negative. Excessive
negative voltage could cause the power FET to break down. To protect the power FET, an internal clamp
between drain and source is implemented, namely VDS(clamp).
VDS(clamp) = VVS - VOUT
(5)
During the period of demagnetization (tdecay), the power FET is turned on for inductance-energy dissipation. The
total energy is dissipated in the high-side switch. Total energy includes the energy of the power supply (E(VS))
and the energy of the load (E(load)). If resistance is in series with inductance, some of the load energy is
dissipated on the resistance.
16
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Feature Description (continued)
E (HSS) = E (VS) + E (load) = E(VS) + E(L) - E(R)
(6)
When an inductive load switches off, E(HSS) causes high thermal stressing on the device.. The upper limit of the
power dissipation depends on the device intrinsic capacity, ambient temperature, and board dissipation condition.
VBAT
VDS(clamp)
IN
L
±
OUT
R
GND
+
Figure 26. Drain-to-Source Clamping Structure
IN
VVS
VOUT
VDS(clamp)
E(HSS)
IOUT
t(decay)
Figure 27. Inductive Load Switching-Off Diagram
From the perspective of the high-side switch, E(HSS) equals the integration value during the demagnetization
period.
E(HSS) =
ò
t(decay )
VDS(clamp) ´ I OUT (t)dt
0
t(decay) =
æ R ´ I OUT(max) + VOUT
L
´ ln ç
ç
R
VOUT
è
E(HSS) = L ´
VVS + VOUT
R2
ö
÷
÷
ø
é
æ R ´ I OUT(max) + VOUT
´ êR ´ I OUT(max) - VOUT ln ç
ç
VOUT
êë
è
öù
÷ú
÷ú
øû
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Feature Description (continued)
When R approximately equals 0, E(HSD) can be given simply as:
E (HSS) =
VVS + VOUT
1
2
´ L ´ I OUT(max
)
2
VOUT
(8)
Figure 28 is a waveform of the device driving an inductive load, and Figure 29 is waveform with an expanded
time scale. Channel 1 is the IN signal, channel 2 is the supply voltage VVS, channel 3 is the output voltage VOUT,
channel 4 is the output current IOUT, and channel M is the measured power dissipation E(HSS).
On the waveform, the duration of VOUT from VVS to (VVS – VDS(clamp)) is around 120 µs. The device also optimizes
the switching-off slew rate when the clamp is active. This optimization can help the system design by keeping the
effects of transient power and EMI to a minimum. As shown in Figure 28 and Figure 29, the controlled slew rate
is around 0.5 V/µs.
Figure 28. Inductive Load Switching-Off Waveform
Figure 29. Inductive Load Switching-Off Expanded
Waveform
Note that for PWM-controlled inductive loads, it is recommended to add the external freewheeling circuitry shown
in Figure 30 to protect the device from repetitive power stressing. TVS is used to achieve the fast decay. See
Figure 30 for more details.
VS
Output
Clamp
OUTx
GND
D
L
TVS
Figure 30. Protection With External Circuitry
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Feature Description (continued)
8.3.5 Fault Detection and Reporting
8.3.5.1 Diagnostic Enable Function
The DIAG_EN pin enables or disables the diagnostic functions. If multiple devices are used, but the ADC
resource is limited in the microcontroller, the MCU can use GPIOs to set DIAG_EN high to enable the
diagnostics of one device while disabling the diagnostics of the other devices by setting DIAG_EN low. In
addition, the device can keep the power consumption to a minimum by setting DIAG_EN and INx low.
8.3.5.2 Multiplexing of Current Sense
For version B, SEL is used to multiplex the shared current-sense function between the two channels. See
Table 1 for more details.
Table 1. Diagnosis Configuration Table
DIAG_EN
INx
H
L
H
L
—
SEL
CS ACTIVATED
CHANNEL
CS, FAULT, STx
—
—
High impedance
0
Channel 1
1
Channel 2
PROTECTIONS AND DIAGNOSTICS
Diagnostics disabled, full protection
Diagnostics disabled, no protection
See Table 2
See Table 2
8.3.5.3 Fault Table
Table 2 applies when the DIAG_EN pin is enabled.
Table 2. Fault Table
CONDITIONS
Normal
INx
OUTx
THER
CRITERION
L
L
—
—
STx
CS
FAULT
(VER. A) (VER. B) (VER. B)
FAULT RECOVERY
H
0
H
—
H
—
H
H
—
—
H
In linear
region
Overlaod, short to ground
H
L
—
Current limit
triggered
L
VCS(H)
L
Auto
Open load (1), short to battery,
reverse polarity
L
H
—
VVS – VOUTx <
V(ol,off)
L
VCS(H)
L
Auto
L
Output auto-retry. Fault
recovers when TJ < T(SD,rst) or
when INx toggles.
L
Thermal shutdown
H
—
TSD triggered
L
VCS(H)
Output latch off. Fault recovers
when INx toggles.
H
Thermal swing
(1)
H
—
—
TSW triggered
L
VCS(H)
L
Auto
An external pullup is required for open-load detection.
8.3.5.4 STx and FAULT Reporting
For version A, two individual STx pins report the fault conditions, each pin for its respective channel. When a
fault condition occurs, it pulls STx down to GND. A 3.3- or 5-V external pullup is required to match the supply
level of the microcontroller. The digital status of each channel can be reported individually, or globally by
connecting all the STx pins together.
For version B, a global FAULT pin is used to monitor the global fault condition among all the channels. When a
fault condition occurs on any channel, the FAULT pin is pulled down to GND. A 3.3-V or 5-V external pullup is
required to match the supply level of the microcontroller.
After the FAULT report, the microcontroller can check and identify the channel in fault status by multiplexed
current sensing. The CS pin also works as a fault report with an internal pullup voltage, VCS(H).
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8.3.6 Full Diagnostics
8.3.6.1 Short-to-GND and Overload Detection
When a channel is on, a short to GND or overload condition causes overcurrent. If the overcurrent triggers either
the internal or external current-limit threshold, the fault condition is reported out. The microcontroller can handle
the overcurrent by turning off the switch. The device heats up if no actions are taken. If a thermal shutdown
occurs, the current limit is ICL(TSD) to keep the power stressing on the power FET to a minimum. The device
automatically recovers when the fault condition is removed.
8.3.6.2 Open-Load Detection
8.3.6.2.1 Channel On
When a channel on, benefiting from the high-accuracy current sense in a small current range, if an open-load
event occurs, it can be detected as an ultralow VCS and handled by the microcontroller. Note that the detection is
not reported on the STx or FAULT pins. The microcontroller must set the SEL pin to detect the channel-on openload fault proactively.
8.3.6.2.2 Channel Off
When a channel is off, if a load is connected, the output is pulled down to GND. But if an open load occurs, the
output voltage is close to the supply voltage (VVS – VOUTx < V(ol,off)), and the fault is reported out.
There is always a leakage current I(ol,off) present on the output due to internal logic control path or external
humidity, corrosion, and so forth. Thus, TI recommends an external pullup resistor to offset the leakage current
when an open load is detected. The recommended pullup resistance is 20 kΩ.
VBAT
Open-Load Detection in Off State
V(ol,off)
R(PU)
VDS
Load
Figure 31. Open-Load Detection in Off-State
8.3.6.3 Short-to-Battery Detection
Short-to-battery has the same detection mechanism and behavior as open-load detection, in both the on-state
and off-state. See Table 2 for more details.
In the on-state, reverse current flows through the FET instead of the body diode, leading to less power
dissipation. Thus, the worst case occurs in the off-state.
• If VOUTx – VVS < V(F) (body diode forward voltage), no reverse current occurs.
• If VOUTx – VVS > V(F), reverse current occurs. The current must be limited to less than IR(1). Setting an INx pin
high can minimize the power stress on its channel. Also, for external reverse protection, see Reverse-Current
Protection for more details.
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8.3.6.4 Reverse Polarity Detection
Reverse polarity detection has the same detection mechanism and behavior as open-load detection both in the
on-state and off-state. See Table 2 for more details.
In the on-state, the reverse current flows through the FET instead of the body diode, leading to less power
dissipation. Thus, the worst case occurs in the off-state. The reverse current must be limited to less than IR(2).
Set the related INx pin high to keep the power dissipation to a minimum. For external reverse-blocking circuitry,
see Reverse-Current Protection for more details.
8.3.6.5 Thermal Fault Detection
To protect the device in severe power stressing cases, the device implements two types of thermal fault
detection, absolute temperature protection (thermal shutdown) and dynamic temperature protection (thermal
swing). Respective temperature sensors are integrated close to each power FET, so the thermal fault is reported
by each channel. This arrangement can help the device keep the cross-channel effect to a minimum when some
channels are in a thermal fault condition.
8.3.6.5.1 Thermal Shutdown
Thermal shutdown is active when the absolute temperature TJ > T(SD). When thefrmal shutdown occurs, the
respective output turns off. The THER pin is used to configure the behavior after the thermal shutdown occurs.
• When the THER pin is low, thermal shutdown operates in the auto-retry mode. The output automatically
recovers when TJ < T(SD) – T(hys), but the current is limited to ICL(TSD) to avoid repetitive thermal shutdown. The
thermal shutdown fault signal is cleared when TJ < T(SD,rst) or after toggling the related INx pin.
• When the THER pin is high, thermal shutdown operates in the latch mode. The output latches off when
thermal shutdown occurs. When the THER pin goes from high to low, thermal shutdown changes to auto-retry
mode. The thermal shutdown fault signal is cleared after toggling the related INx pin.
Thermal swing activates when the power FET temperature is increasing sharply, that is, when ΔT = T(FET) –
T(Logic) > T(sw), then the output turns off. The output automatically recovers and the fault signal clears when ΔT =
T(FET) – T(Logic) < T(sw) – T(hys). Thermal swing function improves the device reliability when subjected to repetitive
fast thermal variation. As shown in Figure 32, multiple thermal swings are triggered before thermal shutdown
occurs.
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Thermal Behavior After Short to GND
V THER
V INx
T(SD)
T(SD,rst)
T(hys)
TJ
T(hys)
T(SW)
ICL
IOUTx
ICL(TSD)
VCS(H)
VCS
VFAULT
or VST
Figure 32. Thermal Behavior Diagram
8.3.7 Full Protections
8.3.7.1 UVLO Protection
The device monitors the supply voltage VVS, to prevent unpredicted behaviors when VVS is too low. When VVS
falls down to VVS(uvf), the device shuts down. When VVS rises up to VVS(uvr), the device turns on.
8.3.7.2 Loss-of-GND Protection
When loss of GND occurs, output is shut down regardless of whether the INx pin is high or low. The device can
protect against two ground-loss conditions, loss of device GND and loss of module GND.
8.3.7.3
Protection for Loss of Power Supply
When loss of supply occurs, the output is shut down regardless of whether the INx pin is high or low. For a
resistive or a capacitive load, loss of supply has no risk. But for a charged inductive load, the current is driven
from all the I/O pins to maintain the inductance current. To protect the system in this condition, TI recommends
the external free-wheeling diode as shown in Figure 33.
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VBAT
VS
I/Os
MCU
High-Side Switch
OUT
L
Figure 33. Protection for Loss of Power Supply
8.3.7.4 Reverse-Current Protection
Reverse current occurs in two conditions: short to battery and reverse polarity.
• When a short to the battery occurs, there is only reverse current through the body diode. IR(1) specifies the
limit of the reverse current.
• In a reverse-polarity condition, there are reverse currents through the body diode and the device GND pin.
IR(2) specifies the limit of the reverse current. The GND pin maximum current is specified in the Absolute
Maximum Ratings.
To protect the device, TI recommends two types of external circuitry.
• Adding a blocking diode. Both the IC and load are protected when in reverse polarity.
VBAT
VS
´
´
OUT
Load
Copyright © 2016, Texas Instruments Incorporated
Figure 34. Reverse-Current External Protection, Method 1
•
Adding a GND network. The reverse current through the device GND is blocked. The reverse current through
the FET is limited by the load itself. TI recommends a resistor in parallel with the diode as a GND network.
The recommended selection are 1-kΩ resistor in parallel with an >100-mA diode. If multiple high-side
switches are used, the resistor and diode can be shared among devices. The reverse current protection diode
in the GND network forward voltage should be less than 0.6 V in any circumstances. In addition a minimum
resistance of 4.7 K is recommended on the I/O pins.
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VBAT
VS
OUT
Load
Figure 35. Reverse-Current External Protection, Method 2
8.3.7.5 MCU I/O Protection
In some severe conditions, such as the ISO7637-2 test or the loss of battery with inductive loads, a negative
pulse occurs on the GND pin This pulse can cause damage on the connected microcontroller. TI recommends
serial resistors to protect the microcontroller, for example, 4.7-kΩ when using a 3.3-V microcontroller and 10-kΩ
for a 5-V microcontroller.
VBAT
I/Os
MCU
VS
High-Side Switch
OUT
Load
Figure 36. MCU I/O External Protection
8.4 Device Functional Modes
8.4.1 Working Modes
The device has three working modes, the normal mode, the standby mode, and the standby mode with
diagnostics.
Note that IN must be low for t > t(off,deg) to enter the standby mode, where t(off,deg) is the standby mode deglitch
time used to avoid false triggering. Figure 37 shows a working-mode diagram.
24
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Device Functional Modes (continued)
Standby Mode
(INx Low, DIAG Low)
DIAG_EN Low to High
DIAG_EN Low
AND
INx High to Low
for
t > t(off,deg)
DIAG_EN High to Low
INx Low to High
Standby Mode
With Diagnostics
(INx Low, DIAG High)
INx low to high
DIAG_EN High
AND
INx High to Low
for
t > t(off,deg)
Normal Mode
(INx High)
Figure 37. Working Modes
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TPS2H160-Q1 device is capable of driving a wide variety of resistive, inductive, and capacitive loads,
including the low-wattage bulbs, LEDs, relays, solenoids, heaters, and sub-modules. Full diagnostics and highaccuracy current-sense features enable intelligent control of the load. An external adjustable current limit
improves the reliability of the whole system by clamping the inrush or overload current.
9.2 Typical Application
The following figure shows an example of the external circuitry connections based on the version-B device.
VBAT
VS
R(ser)
IN1, 2
R(ser)
R(ser)
MCU
LED Strings,
Small Power Bulbs
DIAG_EN
SEL
OUT1
Solenoids, Valves, Relays
OUT2
Power Module:
Cameras, Sensors, Displays
5V
R(ser)
R(pu)
FAULT
General Resistive,Capacitive,
Inductive Loads
CS
R(CS)
CL
GND
THER
R(CL)
Figure 38. Typical Application Diagram
9.2.1 Design Requirements
•
•
•
•
•
•
•
26
VVS range from 9 V to 16 V
Load range is from 0.1 A to 1 A for each channel
Current sense for fault monitoring
Expected current-limit value of 2.5 A
Automatic recovery mode when thermal shutdown occurs
Full diagnostics with 5-V MCU
Reverse-voltage protection with a blocking diode in the power-supply line
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Typical Application (continued)
9.2.2 Detailed Design Procedure
To keep the 1-A nominal current in the 0 to 4-V current-sense range, calculate the R(CS) resistor using
Equation 9. To achieve better current-sense accuracy, a 1% tolerance or better resistor is preferred.
VCS ´ K (CS) 4 ´ 290
V
R (CS) = CS =
=
= 1160 W
I CS
I OUT
1
(9)
To set the adjustable current limit value at 2.5-A, calculate R(CL) using Equation 10.
VCL(th) ´ K (CL) 0.8 ´ 2500
R (CL) =
=
= 800 W
I OUT
2.5
(10)
TI recommends R(ser) = 10 kΩ for 5-V MCU, and R(pu) = 10 kΩ as the pullup resistor.
9.2.3 Application Curves
Figure 39 shows a test example of soft-start when driving a big capacitive load. Figure 40 shows an expanded
waveform of the output current.
VS = 12 V
Load current = 0.4
A
CH2 = FAULT
INx = ↑
CL = 2.3 mF
Current limit = 1 A
CH1 = INx
CH3 = output
voltage
CH4 = output
current
Figure 39. Driving a Capacitive Load
VVS = 12 V
Load current = 0.4
A
CH2 = FAULT
INx = ↑
CL = 2.3 mF
Current limit = 1 A
CH1 = INx
CH3 = output
voltage
CH4 = output
current
Figure 40. Driving a Capacitive Load, Expanded Waveform
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Typical Application (continued)
Figure 41 shows a test example of PWM-mode driving. Figure 42 shows the expanded waveform of the rising
edge. Figure 43 shows the expanded waveform of the falling edge.
VVS = 13.5 V
CH2 = CS voltage
INx = 200-Hz PWM
at 50% duty cycle
CH3 = output
voltage
CH1 = INx signal
VVS = 13.5 V
CH4 = output
current
CH2 = CS voltage
Figure 41. PWM Signal Driving
VVS = 13.5 V
CH2 = CS voltage
INx = 200-Hz PWM
at 50% duty cycle
CH3 = output
voltage
CH1 = INx signal
CH4 = output
current
Figure 42. Expanded Waveform of Rising Edge
INx = 200-Hz PWM at 50% duty cycle
CH3 = output voltage
CH1 = INx signal
CH4 = output current
Figure 43. Expanded Waveform of Falling Edge
28
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10 Power Supply Recommendations
The device is qualified for both automotive and industrial applications. The normal power supply connection is a
12-V automotive system or 24-V industrial system. Detailed supply voltage should be within the range specified
in the Recommended Operating Conditions.
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11 Layout
11.1 Layout Guidelines
To prevent thermal shutdown, TJ must be less than 150°C. The HTSSOP package has good thermal impedance.
However, the PCB layout is very important. Good PCB design can optimize heat transfer, which is absolutely
essential for the long-term reliability of the device.
• Maximize the copper coverage on the PCB to increase the thermal conductivity of the board. The major heat
flow path from the package to the ambient is through the copper on the PCB. Maximum copper is extremely
important when there are not any heat sinks attached to the PCB on the other side of the package.
• Add as many thermal vias as possible directly under the package ground pad to optimize the thermal
conductivity of the board.
• All thermal vias should either be plated shut or plugged and capped on both sides of the board to prevent
solder voids. To ensure reliability and performance, the solder coverage should be at least 85%.
11.2 Layout Examples
11.2.1 Without a GND Network
Without a GND network, tie the thermal pad directly to the board GND copper for better thermal performance.
1
16
OUT1
OUT1
2
15
OUT1
14
VS
13
VS
12
OUT2
6
11
OUT2
7
10
8
9
3
4
5
GND
Thermal
Pad
(GND)
Figure 44. Layout Example Without a GND Network
30
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Layout Examples (continued)
11.2.2 With a GND Network
With a GND network, tie the thermal pad as one trace to the board GND copper.
1
16
OUT1
OUT1
2
15
OUT1
3
14
VS
13
VS
12
OUT2
6
11
OUT2
7
10
8
9
4
5
GND
Network
Thermal
Pad
(GND)
GND
Figure 45. Layout Example With a GND Network
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12 Device and Documentation Support
12.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.2 Community Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.3 Trademarks
PowerPAD, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
32
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS2H160AQPWPRQ1
ACTIVE
HTSSOP
PWP
16
2000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
2H160AQ
TPS2H160BQPWPRQ1
ACTIVE
HTSSOP
PWP
16
2000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
2H160BQ
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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