TPS62130, TPS62130A, TPS62131, TPS62132, TPS62133
ZHCSB84F – NOVEMBER 2011 – REVISED NOVEMBER 2021
TPS6213x 采用 3mm × 3mm QFN 封装的 3V 至 17V、3A 降压转换器
1 特性
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3 说明
DCS-Control™ 拓扑
输入电压范围:3 V 至 17 V
高达 3A 输出电流
可调输出电压范围为 0.9 V 至 6 V
引脚可选输出电压(标称值,+5%)
可编程软启动和跟踪
节能模式无缝转换
17µA 静态电流(典型值)
可选工作频率
电源正常状态输出
100% 占空比模式
短路保护
过热保护
与 TPS62140 和 TPS62150 引脚对引脚兼容
采用 3mm × 3mm QFN-16 封装
使用 TPS82130 可缩短设计时间
TPS6213x 系列是易于使用的同步降压直流/直流转换
器,此转换器针对高功率密度应用进行了优化。典型值
为 2.5MHz 的高开关频率支持使用小型电感器,并且通
过使用 DCS-Control 拓扑技术提供快速瞬态响应以及
高输出电压精度。
此器件具有 3V 至 17V 宽运行输入电压范围,非常适
用于由锂离子或其它电池以及 12V 中间电源轨供电的
系统。这些器件在 0.9V 至 6V 的输出电压范围内,支
持高达 3A 的持续输出电流(使用 100% 占空比模式
时)。此输出电压启动斜坡由软启动引脚控制,从而支
持作为独立电源运行或采用跟踪配置。通过配置使能引
脚和开漏电源正常状态引脚也可以实现电源排序。
在节能模式下,这些器件从 VIN 中消耗约 17μA 的静
态电流。负载较小时可自动且无缝进入节能模式,同时
该模式可保持整个负载范围内的高效率。该器件在关断
模式下处于关断状态,期间的流耗低于 2μA。
2 应用
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此器件分为可调和固定输出电压型号,采用 3mm ×
3mm (RGT) 16 引脚超薄四方扁平无引线 (VQFN) 封
装。
标准 12V 电源轨
由单节或多节锂离子电池组成的 POL 电源
固态硬盘
嵌入式系统
LDO 替代产品
移动 PC、平板、调制解调器、摄像头
服务器、微型服务器
数据终端、销售终端 (ePOS)
器件信息
(1)
器件型号
封装(1)
封装尺寸(标称值)
TPS6213x
VQFN (16)
3.00mm × 3.00mm
如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
100
1 / 2.2 µH
(3 .. 17) V
PVIN
SW
AVIN
VOS
1.8 V / 3 A
90
100 k
22 …F
10 …F
EN
0.1 …F
PG
FB
DEF
AGND
FSW
PGND
典型应用原理图
Efficiency (%)
TPS62131
SS/TR
3.3 nF
VIN=5V
80
VIN=12V
VIN=17V
70
60
50
40
0.0
VOUT=3.3V
fsw=1.25MHz
0.5
1.0
1.5
2.0
Output Current (A)
2.5
3.0
G001
效率与输出电流间的关系
本文档旨在为方便起见,提供有关 TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SLVSAG7
TPS62130, TPS62130A, TPS62131, TPS62132, TPS62133
www.ti.com.cn
ZHCSB84F – NOVEMBER 2011 – REVISED NOVEMBER 2021
Table of Contents
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Device Comparison Table...............................................3
6 Pin Configuration and Functions...................................3
7 Specifications.................................................................. 4
7.1 Absolute Maximum Ratings(1) .................................... 4
7.2 ESD Ratings............................................................... 4
7.3 Recommended Operating Conditions.........................4
7.4 Thermal Information....................................................4
7.5 Electrical Characteristics.............................................5
7.6 Typical Characteristics................................................ 6
8 Detailed Description........................................................7
8.1 Overview..................................................................... 7
8.2 Functional Block Diagram........................................... 8
8.3 Feature Description.....................................................9
8.4 Device Functional Modes..........................................11
9 Application and Implementation.................................. 13
9.1 Application Information............................................. 13
9.2 Typical Application.................................................... 13
9.3 System Examples..................................................... 25
10 Power Supply Recommendations..............................28
11 Layout........................................................................... 28
11.1 Layout Guidelines................................................... 28
11.2 Layout Example...................................................... 29
11.3 Thermal Information................................................ 29
12 Device and Documentation Support..........................30
12.1 Device Support....................................................... 30
12.2 Documentation Support.......................................... 30
12.3 接收文档更新通知................................................... 30
12.4 支持资源..................................................................30
12.5 Trademarks............................................................. 30
12.6 Electrostatic Discharge Caution..............................30
12.7 术语表..................................................................... 30
13 Mechanical, Packaging, and Orderable
Information.................................................................... 31
4 Revision History
注:以前版本的页码可能与当前版本的页码不同
Changes from Revision E (August 2016) to Revision F (November 2021)
Page
• 添加了指向 TPS82130 产品页面的链接..............................................................................................................1
• 更新了整个文档中的表格、图和交叉参考的编号格式......................................................................................... 1
• 编辑了数据表的语法........................................................................................................................................... 1
Changes from Revision D (June 2016) to Revision E (August 2016)
•
•
•
•
2
Page
Changed the TJ MAX value From: 125°C To: 150°C in the Absolute Maximum Ratings .................................. 4
Changed (TJ = –40°C to 85°C) To: (TJ = –40°C to 125°C) in the 节 7.5 conditions........................................ 5
Added a test condition for IQ at TA = -40°C to +85°C in the 节 7.5 .................................................................... 5
Added 表 8-1 and 表 8-2 ..................................................................................................................................10
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ZHCSB84F – NOVEMBER 2011 – REVISED NOVEMBER 2021
5 Device Comparison Table
PART NUMBER
OUTPUT VOLTAGE
POWER GOOD LOGIC LEVEL (EN = LOW)
TPS62130
adjustable
High Impedance
TPS62130A
adjustable
Low
TPS62131
1.8 V
High Impedance
TPS62132
3.3 V
High Impedance
TPS62133
5.0 V
High Impedance
SW
3
PG
4
PGND
VOS
EN
13
Exposed
Thermal Pad
5
6
7
8
DEF
2
14
FSW
SW
15
AGND
1
16
FB
SW
PGND
6 Pin Configuration and Functions
12
PVIN
11
PVIN
10
AVIN
9
SS/TR
图 6-1. 16-Pin VQFN With Exposed Thermal Pad (RGT) Top View
表 6-1. Pin Functions
PIN(1)
DESCRIPTION
NAME
1,2,3
SW
O
Switch node, which is connected to the internal MOSFET switches. Connect an inductor between SW
and the output capacitor.
4
PG
O
Output power good (High = VOUT ready, Low = VOUT below nominal regulation); open drain (requires
pullup resistor)
5
FB
I
Voltage feedback of adjustable version. Connect a resistive voltage divider to this pin. It is recommended
to connect FB to AGND on fixed output voltage versions for improved thermal performance.
6
AGND
7
FSW
I
Switching Frequency Select (Low ≈ 2.5 MHz, High ≈ 1.25 MHz(2) for typical operation)(3)
8
DEF
I
Output voltage scaling (Low = nominal, High = nominal + 5%)(3)
9
SS/TR
I
Soft-Start/Tracking Pin. An external capacitor connected to this pin sets the internal voltage reference
rise time. It can be used for tracking and sequencing.
Analog Ground. Must be connected directly to the Exposed Thermal Pad and common ground plane.
10
AVIN
I
Supply voltage for control circuitry. Connect to the same source as PVIN.
11,12
PVIN
I
Supply voltage for power stage. Connect to the same source as AVIN.
13
EN
I
Enable input (High = enabled, Low = disabled)(3)
14
VOS
I
Output voltage sense pin and connection for the control loop circuitry
15,16
(1)
(2)
(3)
I/O
NO.
PGND
Power Ground. Must be connected directly to the Exposed Thermal Pad and common ground plane.
Exposed
Thermal Pad
Must be connected to AGND (pin 6), PGND (pin 15,16), and common ground plane. See the Layout
Example. Must be soldered to achieve appropriate power dissipation and mechanical reliability.
For more information about connecting pins, see the Detailed Description and Application and Implementation sections.
Connect FSW to VOUT or PG in this case.
An internal pulldown resistor keeps logic level low if pin is floating.
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7 Specifications
7.1 Absolute Maximum Ratings(1)
over operating junction temperature range (unless otherwise noted)
MIN
MAX
AVIN, PVIN
–0.3
20
EN, SS/TR
–0.3
VIN+0.3
SW
–0.3
VIN+0.3
V
DEF, FSW, FB, PG, VOS
–0.3
7
V
10
mA
Operating junction temperature, TJ
–40
150
°C
Storage temperature, Tstg
–65
150
°C
Pin voltage
range(2)
Power Good sink current PG
(1)
(2)
UNIT
V
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to network ground terminal.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
(3)
Electrostatic discharge(1)
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(2)
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101(3)
±500
UNIT
V
ESD testing is performed according to the respective JESD22 JEDEC standard.
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating junction temperature range (unless otherwise noted)
MIN
Supply Voltage, VIN (at AVIN and PVIN)
Operating junction temperature, TJ
MAX
UNIT
3
17
V
–40
125
°C
7.4 Thermal Information
THERMAL METRIC(1)
RθJA
Junction-to-ambient thermal resistance
RθJCtop
Junction-to-case(top) thermal resistance
53.6
RθJB
Junction-to-board thermal resistance
17.4
ψJT
Junction-to-top characterization parameter
1.1
ψJB
Junction-to-board characterization parameter
17.4
RθJCbot
Junction-to-case(bottom) thermal resistance
4.5
(1)
4
TPS6213X
RGT 16 PINS
UNITS
45
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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ZHCSB84F – NOVEMBER 2011 – REVISED NOVEMBER 2021
7.5 Electrical Characteristics
over operating junction temperature (TJ = –40°C to 125°C), typical values at VIN = 12 V and TA=25°C (unless otherwise
noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
Input voltage range(1)
VIN
IQ
ISD
VUVLO
TSD
3
Operating quiescent current
EN=High, IOUT = 0 mA,
device not switching
Shutdown current(2)
EN=Low
Undervoltage lockout threshold
TA = -40°C to +85°C
TA = -40°C to +85°C
Falling Input Voltage (PWM mode operation)
2.6
Hysteresis
17
17
30
17
25
1.5
25
1.5
4
2.7
2.8
200
Thermal shutdown temperature
µA
µA
V
mV
160
Thermal shutdown hysteresis
V
°C
20
CONTROL (EN, DEF, FSW, SS/TR, PG)
High level input threshold voltage (EN,
DEF, FSW)
VH
VL
Low level input threshold voltage (EN,
DEF, FSW)
ILKG
Input leakage current (EN, DEF, FSW)
0.9
0.65
0.45
EN=VIN or GND; DEF, FSW=VOUT or GND
V
0.3
V
µA
0.01
1
Rising (%VOUT)
92%
95%
98%
Falling (%VOUT)
87%
90%
94%
0.07
0.3
VTH_PG
Power good threshold voltage
VOL_PG
Power good output low
IPG=–2mA
ILKG_PG
Input leakage current (PG)
VPG=1.8V
ISS/TR
SS/TR pin source current
V
1
400
nA
2.5
2.7
µA
VIN≥6V
90
170
VIN=3V
120
VIN≥6V
40
VIN=3V
50
2.3
POWER SWITCH
High-side MOSFET ON-resistance
RDS(ON)
Low-side MOSFET ON-resistance
High-side MOSFET forward current limit(3) VIN =12V, TA= 25°C
ILIMF
3.6
70
mΩ
mΩ
4.2
4.9
A
1
100
nA
6.0
V
OUTPUT
ILKG_FB
VOUT
Input leakage current (FB)
TPS62130, VFB=0.8V
Output voltage range (TPS62130)
VIN ≥ VOUT
DEF (Output voltage programming)
DEF=0 (GND)
VOUT
DEF=1 (VOUT)
VOUT+5%
Initial output voltage accuracy(4)
Tracking Feedback Voltage (TPS62130)
Load
regulation(5)
Line regulation(5)
(1)
(2)
(3)
(4)
0.9
PWM mode operation, VIN ≥ VOUT +1V
785.6
800 814.4
PWM mode operation, VIN ≥ VOUT +1V,
TA = –10°C to 85°C
788.0
800 812.8
Power Save Mode operation, COUT=22µF
781.6
800 822.4
VSS/TR = 350mV
212.6
225 237.4
mV
VIN=12V, VOUT=3.3V, PWM mode operation
0.05
%/A
3V ≤ VIN ≤ 17V, VOUT=3.3V, IOUT= 1A, PWM
mode operation
0.02
%/V
mV
The device is still functional down to Under Voltage Lockout (see parameter VUVLO).
Current into AVIN+PVIN pin.
This is the static current limit. It can be temporarily higher in applications due to internal propagation delay (see 节 8.4.4 section).
This is the accuracy provided at the FB pin for the adjustable VOUT version (line and load regulation effects are not included). For the
fixed output voltage versions the (internal) resistive divider is included.
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(5)
Line and load regulation depend on external component selection and layout (see 图 9-16 and 图 9-17).
7.6 Typical Characteristics
图 7-1. Quiescent Current
图 7-2. Shutdown Current
100.0
200.0
160.0
125°C
RDSon Low−Side (mΩ)
RDSon High−Side (mΩ)
180.0
140.0
120.0
85°C
100.0
25°C
80.0
60.0
−10°C
−40°C
40.0
80.0
125°C
60.0
40.0
85°C
25°C
−10°C
20.0
−40°C
20.0
0.0
0.0
3.0
6.0
9.0
12.0
Input Voltage (V)
15.0
18.0 20.0
图 7-3. High-Side Switch Resistance
6
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G001
0.0
0.0
3.0
6.0
9.0
12.0
Input Voltage (V)
15.0
18.0 20.0
G001
图 7-4. Low-Side Switch Resistance
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ZHCSB84F – NOVEMBER 2011 – REVISED NOVEMBER 2021
8 Detailed Description
8.1 Overview
The TPS6213x synchronous switched mode power converters are based on DCS-Control (Direct Control with
Seamless Transition into power save mode), an advanced regulation topology that combines the advantages of
hysteretic, voltage mode, and current mode control including an AC loop directly associated to the output
voltage. This control loop takes information about output voltage changes and feeds it directly to a fast
comparator stage. It sets the switching frequency, which is constant for steady state operating conditions, and
provides immediate response to dynamic load changes. To get accurate DC load regulation, a voltage feedback
loop is used. The internally compensated regulation network achieves fast and stable operation with small
external components and low-ESR capacitors.
The DCS-Control topology supports PWM (Pulse Width Modulation) mode for medium and heavy load
conditions and a power save mode at light loads. During PWM, the device operates at its nominal switching
frequency in continuous conduction mode. This frequency is typically approximately 2.5 MHz or 1.25 MHz with a
controlled frequency variation depending on the input voltage. If the load current decreases, the converter enters
power save mode to sustain high efficiency down to very light loads. In power save mode, the switching
frequency decreases linearly with the load current. Since DCS-Control supports both operation modes within one
single building block, the transition from PWM to power save mode is seamless without effects on the output
voltage.
Fixed output voltage versions provide the smallest solution size and lowest current consumption, requiring only
four external components. An internal current limit supports nominal output currents of up to 3 A.
The TPS6213x family offers both excellent DC voltage and superior load transient regulation, combined with
very low output voltage ripple, minimizing interference with RF circuits.
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8.2 Functional Block Diagram
PG
Soft
start
Thermal
Shtdwn
UVLO
AVIN
PVIN PVIN
PG control
HS lim
comp
EN
*
SW
SS/TR
power
control
control logic
gate
drive
SW
DEF*
SW
FSW*
comp
LS lim
VOS
direct control
&
compensation
ramp
_
FB
comparator
+
timer tON
error
amplifier
DCS - ControlTM
*
This pin is connected to a pull down resistor internally
(see Feature Description section).
AGND
PGND PGND
* This pin is connected to a pulldown resistor internally (see 节 8.3).
图 8-1. TPS62130 and TPS62130A (Adjustable Output Voltage)
8
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PG
Soft
start
Thermal
Shtdwn
UVLO
AVIN
PVIN PVIN
PG control
HS lim
comp
EN*
SW
SS/TR
power
control
control logic
DEF
gate
drive
SW
*
SW
FSW*
comp
LS lim
VOS
direct control
&
compensation
ramp
_
FB*
comparator
+
timer tON
error
amplifier
DCS - ControlTM
*
This pin is connected to a pull down resistor internally
(see Feature Description section).
AGND
PGND PGND
* This pin is connected to a pulldown resistor internally (see 节 8.3).
图 8-2. TPS62131/2/3 (Fixed Output Voltage)
8.3 Feature Description
8.3.1 Enable / Shutdown (EN)
When Enable (EN) is set High, the device starts operation. Shutdown is forced if EN is pulled Low with a
shutdown current of typically 1.5 µA. During shutdown, the internal power MOSFETs as well as the entire control
circuitry are turned off. The internal resistive divider pulls down the output voltage smoothly. The EN signal must
be set externally to High or Low. An internal pulldown resistor of approximately 400 kΩ is connected and keeps
EN logic low, if Low is set initially and then the pin gets floating. It is disconnected if the pin is set High.
Connecting the EN pin to an appropriate output signal of another power rail provides sequencing of multiple
power rails.
8.3.2 Soft Start / Tracking (SS/TR)
The internal soft start circuitry controls the output voltage slope during start-up. This avoids excessive inrush
current and ensures a controlled output voltage rise time. It also prevents unwanted voltage drops from highimpedance power sources or batteries. When EN is set to start device operation, the device starts switching after
a delay of approximately 50 µs and VOUT rises with a slope controlled by an external capacitor connected to the
SS/TR pin. See 图 9-34 and 图 9-35 for typical start-up operation.
Using a very small capacitor (or leaving SS/TR pin un-connected) provides fastest start-up behavior. There is no
theoretical limit for the longest start-up time. The TPS6213x can start into a pre-biased output. During monotonic
pre-biased start-up, both the power MOSFETs are not allowed to turn on until the internal ramp of the device
sets an output voltage above the pre-bias voltage. As long as the output is below approximately 0.5 V, a reduced
current limit of typically 1.6 A is set internally. If the device is set to shutdown (EN = GND), undervoltage lockout,
or thermal shutdown, an internal resistor pulls the SS/TR pin down to ensure a proper low level. Returning from
those states causes a new start-up sequence as set by the SS/TR connection.
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A voltage supplied to SS/TR can be used for tracking a primary voltage. The output voltage will follow this
voltage in both directions up and down (see 节 9).
8.3.3 Power Good (PG)
The TPS6213x has a built-in power good (PG) function to indicate whether the output voltage has reached its
appropriate level or not. The PG signal can be used for start-up sequencing of multiple rails. The PG pin is an
open-drain output that requires a pullup resistor (to any voltage below 7 V). It can sink 2 mA of current and
maintain its specified logic low level. With TPS62130, it is high impedance when the device is turned off due to
EN, UVLO, or thermal shutdown. The TPS62130A features PG = Low in this case and can be used to actively
discharge VOUT (see 图 9-41). VIN must remain present for the PG pin to stay Low. See the TPS62130A
Differences to TPS62130 Application Report for application details. If not used, the PG pin should be connected
to GND but may be left floating.
space
表 8-1. Power Good Pin Logic Table (TPS62130)
PG LOGIC STATUS
DEVICE STATE
HIGH IMPEDANCE
VFB ≥ VTH_PG
Enable (EN = High)
LOW
√
VFB ≤ VTH_PG
Shutdown (EN = Low)
√
√
UVLO
0.7 V < VIN < VUVLO
√
TJ > TSD
√
VIN < 0.7 V
√
Thermal Shutdown
Power Supply Removal
space
表 8-2. Power Good Pin Logic Table (TPS62130A)
PG LOGIC STATUS
DEVICE STATE
HIGH IMPEDANCE
VFB ≥ VTH_PG
Enable (EN = High)
LOW
√
VFB ≤ VTH_PG
√
Shutdown (EN = Low)
√
UVLO
0.7 V < VIN < VUVLO
Thermal Shutdown
√
TJ > TSD
Power Supply Removal
VIN < 0.7 V
√
√
space
8.3.4 Pin-Selectable Output Voltage (DEF)
The output voltage of the TPS6213x devices can be increased by 5% above the nominal voltage by setting the
DEF pin to High.1 When DEF is Low, the device regulates to the nominal output voltage. Increasing the nominal
voltage allows the user to adapt the power supply voltage to the variations of the application hardware. More
detailed information on voltage margining using TPS6213x can be found in Voltage Margining Using the
TPS62130 Application Report. A pulldown resistor of approximately 400 kΩ is internally connected to the pin to
ensure a proper logic level if the pin is high impedance or floating after initially set to Low. The resistor is
disconnected if the pin is set High.
8.3.5 Frequency Selection (FSW)
To get high power density with a very small solution size, a high switching frequency allows the use of small
external components for the output filter. However, switching losses increase with the switching frequency. If
1
10
Maximum allowed voltage is 7 V. Therefore, it is recommended to connect it to VOUT or PG, not VIN.
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efficiency is the key parameter, more than solution size, the switching frequency can be set to half (1.25 MHz
typical) by pulling FSW to High. It is mandatory to start with FSW = Low to limit inrush current, which can be
done by connecting the pin to VOUT or PG. Running with lower frequency, a higher efficiency, but also a higher
output voltage ripple, is achieved. Pull FSW to Low for high frequency operation (2.5 MHz typical). To get low
ripple and full output current at the lower switching frequency, it is recommended to use an inductor of at least
2.2 µH. The switching frequency can be changed during operation, if needed. A pulldown resistor of about 400
kΩ is internally connected to the pin, acting the same way as at the DEF pin (see above).
8.3.6 Undervoltage Lockout (UVLO)
If the input voltage drops, the undervoltage lockout prevents misoperation of the device by switching off both the
power FETs. The undervoltage lockout threshold is set typically to 2.7 V. The device is fully operational for
voltages above the UVLO threshold and turns off if the input voltage trips the threshold. The converter starts
operation again once the input voltage exceeds the threshold by a hysteresis of typically 200 mV.
8.3.7 Thermal Shutdown
The junction temperature (TJ) of the device is monitored by an internal temperature sensor. If TJ exceeds 160°C
(typical), the device goes into thermal shutdown. Both the high-side and low-side power FETs are turned off and
PG goes high impedance. When TJ decreases below the hysteresis amount, the converter resumes normal
operation, beginning with soft start. To avoid unstable conditions, a hysteresis of typically 20°C is implemented
on the thermal shutdown temperature.
8.4 Device Functional Modes
8.4.1 Pulse Width Modulation (PWM) Operation
The TPS6213x operates with pulse width modulation in continuous conduction mode (CCM) with a nominal
switching frequency of 2.5 MHz or 1.25 MHz, selectable with the FSW pin. The frequency variation in PWM is
controlled and depends on VIN, VOUT, and the inductance. The device operates in PWM mode as long the output
current is higher than half the ripple current of the inductor. To maintain high efficiency at light loads, the device
enters power save mode at the boundary to discontinuous conduction mode (DCM). This happens if the output
current becomes smaller than half the ripple current of the inductor.
8.4.2 Power Save Mode Operation
The TPS6213x enters its built-in power save mode seamlessly if the load current decreases. This secures a high
efficiency in light-load operation. The device remains in power save mode as long as the inductor current is
discontinuous.
In power save mode, the switching frequency decreases linearly with the load current maintaining high efficiency.
The transition into and out of power save mode happens within the entire regulation scheme and is seamless in
both directions.
The TPS6213x includes a fixed on-time circuitry. An estimate for this on time in steady-state operation with FSW
= Low is:
t ON =
VOUT
× 400ns
V IN
(1)
For very small output voltages, an absolute minimum on time of approximately 80 ns is kept to limit switching
losses. The operating frequency is thereby reduced from its nominal value, which keeps efficiency high. Also, the
off time can reach its minimum value at high duty cycles. The output voltage remains regulated in such case.
Using tON, the typical peak inductor current in power save mode can be approximated by:
I LPSM ( peak ) =
(V IN - VOUT )
× t ON
L
(2)
When VIN decreases to typically 15% above VOUT, the TPS6213x does not enter power save mode, regardless
of the load current. The device maintains output regulation in PWM mode.
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8.4.3 100% Duty-Cycle Operation
The duty cycle of the buck converter is given by D = VOUT / VIN and increases as the input voltage comes close
to the output voltage. In this case, the device starts 100% duty cycle operation turning on the high-side switch
100% of the time. The high-side switch stays turned on as long as the output voltage is below the internal set
point. This allows the conversion of small input to output voltage differences (for example, for the longest
operation time of battery-powered applications). In 100% duty cycle mode, the low-side FET is switched off.
The minimum input voltage to maintain output voltage regulation, depending on the load current and the output
voltage level, can be calculated as:
VIN (min) = VOUT (min) + I OUT (RDS ( on ) + RL )
(3)
where
• IOUT is the output current.
• RDS(on) is the RDS(on) of the high-side FET.
• RL is the DC resistance of the inductor used.
8.4.4 Current Limit And Short Circuit Protection
The TPS6213x devices have protection against heavy load and short circuit events. If a short circuit is detected
(VOUT drops below 0.5 V), the current limit is reduced to 1.6 A typically. If the output voltage rises above 0.5 V,
the device runs in normal operation again. At heavy loads, the current limit determines the maximum output
current. If the current limit is reached, the high-side FET is turned off. Avoiding shoot-through current, then the
low-side FET switches on to allow the inductor current to decrease. The low-side current limit is typically 3.5 A.
The high-side FET turns on again only if the current in the low-side FET has decreased below the low-side
current limit threshold.
The output current of the device is limited by the current limit. Due to internal propagation delay, the actual
current can exceed the static current limit during that time. The dynamic current limit can be calculated as
follows:
I peak ( typ ) = I LIMF +
VL
× t PD
L
(4)
where
•
•
•
•
ILIMF is the static current limit, specified in the Electrical Characteristics.
L is the inductor value.
VL is the voltage across the inductor (VIN - VOUT).
tPD is the internal propagation delay.
The current limit can exceed static values, especially if the input voltage is high and very small inductances are
used. The dynamic high-side switch peak current can be calculated as follows:
I peak (typ ) = I LIMF +
12
(VIN - VOUT )× 30ns
L
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9 Application and Implementation
Note
以下应用部分中的信息不属于 TI 器件规格的范围,TI 不担保其准确性和完整性。TI 的客 户应负责确定
器件是否适用于其应用。客户应验证并测试其设计,以确保系统功能。
9.1 Application Information
The TPS6213x is a switched mode step-down converter that is able to convert a 3V- to 17-V input voltage into a
0.9-V to 6-V output voltage, providing up to 3 A. The device needs a minimum amount of external components.
Apart from the LC output filter and the input capacitors, only the TPS62130 (TPS62130A) with adjustable output
voltage needs an additional resistive divider to set the output voltage level.
9.2 Typical Application
1 / 2.2 µH
(3 .. 17)V
C1
10uF
C7
0.1uF
PVIN
SW
AVIN
VOS
EN
PG
100k
C3
22uF
R1
TPS62130
SS/TR
C5
3.3nF
VOUT / 3A
FB
DEF
AGND
FSW
PGND
R2
图 9-1. 3-A Step-Down Converter for Point-Of-Load Power Supply Using the TPS62130
9.2.1 Design Requirements
The following design guideline provides a component selection to operate the device within the recommended
operating conditions. Using the FSW pin, the design can be optimized for highest efficiency or smallest solution
size and lowest output voltage ripple. For highest efficiency set FSW = High and the device operates at the lower
switching frequency. For the smallest solution size and lowest output voltage ripple, set FSW = Low and the
device operates with higher switching frequency. The typical values for all measurements are VIN = 12 V, VOUT =
3.3 V and T = 25°C, using the external components of 表 9-1.
The component selection used for measurements is given as follows:
表 9-1. List Of Components
MANUFACTURER(1)
REFERENCE
DESCRIPTION
IC
17-V, 3-A Step-Down Converter, QFN
L1
2.2 µH, 0.165 inch x 0.165 inch
C1
10 µF, 25 V, Ceramic, 1210
Standard
C3
22 µF, 6.3 V, Ceramic, 0805
Standard
C5
3300 pF, 25 V, Ceramic, 0603
Standard
C7
0.1 µF, 25 V, Ceramic, 0603
Standard
R1
depending on VOUT
R2
depending on VOUT
R3
100 kΩ, Chip, 0603, 1/16W, 1%
(1)
TPS62130RGT, Texas Instruments
XFL4020-222MEB, Coilcraft
Standard
See the Third-Party Products Disclaimer.
9.2.2 Detailed Design Procedure
9.2.2.1 Programming The Output Voltage
While the output voltage of the TPS62130 (TPS62130A) is adjustable, the TPS62131, TPS62132, and
TPS62133 are programmed to fixed output voltages. For fixed output voltage versions, the FB pin is pulled down
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internally and can be left floating. It is recommended to connect to AGND to improve thermal resistance. The
adjustable version can be programmed for output voltages from 0.9 V to 6 V by using a resistive divider from
VOUT to AGND. The voltage at the FB pin is regulated to 800 mV. The value of the output voltage is set by the
selection of the resistive divider from 方程式 6. It is recommended to choose resistor values that allow a current
of at least 2 μA, meaning the value of R2 should not exceed 400 kΩ. Lower resistor values are recommended
for the highest accuracy and most robust design. For applications requiring lowest current consumption, the use
of fixed output voltage versions is recommended.
ö
æV
R1 = R 2 ç OUT - 1÷
ø
è 0.8V
(6)
In case the FB pin gets opened, the device clamps the output voltage at the VOS pin internally to approximately
7.4 V.
9.2.2.2 External Component Selection
The external components have to fulfill the needs of the application, but also the stability criteria of the devices
control loop. The TPS6213x is optimized to work within a range of external components. The inductance of the
LC output filter and capacitance have to be considered together, creating a double pole, responsible for the
corner frequency of the converter (see 节 9.2.2.4). 表 9-2 can be used to simplify the output filter component
selection. Checked cells represent combinations that are proven for stability by simulation and lab test. Further
combinations should be checked for each individual application. See Optimizing the TPS62130/40/50/60 Output
Filter Application Report for details.
表 9-2. Recommended LC Output Filter Combinations
4.7 µF
10 µF
22 µF
47 µF
100 µF
200 µF
√
√
√
√
0.47
1 µH(1)
√
√
√
√
√
µH(1)
√
√(2)
3.3 µH(1)
√
√
2.2
400 µF
µH(1)
4.7 µH(1)
(1)
(2)
The values in the table are nominal values. The effective capacitance was considered to vary by +20% and -50%.
This LC combination is the standard value and recommended for most applications.
The TPS6213x can be run with an inductor as low as 1 µH. FSW should be set Low in this case. However, for
applications running with the low frequency setting (FSW = High) or with low input voltages, 2.2 µH is
recommended.
9.2.2.2.1 Inductor Selection
The inductor selection is affected by several effects like inductor ripple current, output ripple voltage, PWM-toPSM transition point, and efficiency. In addition, the inductor selected has to be rated for appropriate saturation
current and DC resistance (DCR). 方程式 7 and 方程式 8 calculate the maximum inductor current under static
load conditions.
I L(max) = I OUT (max) +
DI L(max) = VOUT
DI L(max)
2
V
æ
ç 1 - OUT
ç V IN (max)
×ç
L
×f
ç (min) SW
ç
è
(7)
ö
÷
÷
÷
÷
÷
ø
(8)
where
14
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•
•
•
•
ZHCSB84F – NOVEMBER 2011 – REVISED NOVEMBER 2021
IL(max) is the maximum inductor current.
ΔIL is the peak-to-peak inductor ripple current.
L(min) is the minimum effective inductor value.
fSW is the actual PWM switching frequency.
Calculating the maximum inductor current using the actual operating conditions gives the required minimum
saturation current of the inductor. It is recommended to add a margin of approximately 20%. A larger inductor
value is also useful to get lower ripple current, but increases the transient response time and size as well. The
following inductors have been used with the TPS6213x and are recommended for use:
表 9-3. List Of Inductors
(1)
(2)
TYPE
INDUCTANCE [µH]
CURRENT [A](1)
DIMENSIONS [L × B ×
H] mm
MANUFACTURER(2)
XFL4020-102ME_
1.0 µH, ±20%
4.7
4 × 4 × 2.1
Coilcraft
XFL4020-152ME_
1.5 µH, ±20%
4.2
4 × 4 × 2.1
Coilcraft
XFL4020-222ME_
2.2 µH, ±20%
3.8
4 × 4 × 2.1
Coilcraft
IHLP1212BZ-11
1.0 µH, ±20%
4.5
3 × 3.6 × 2
Vishay
IHLP1212BZ-11
2.2 µH, ±20%
3.0
3 × 3.6 × 2
Vishay
SRP4020-3R3M
3.3µH, ±20%
3.3
4.8 × 4 × 2
Bourns
VLC5045T-3R3N
3.3µH, ±30%
4.0
5 × 5 × 4.5
TDK
Lower of IRMS at 40°C rise or ISAT at 30% drop.
See the Third-Party Products Disclaimer.
The inductor value also determines the load current at which power save mode is entered:
I load ( PSM ) =
1
DI L
2
(9)
Using 方程式 9, this current level can be adjusted by changing the inductor value.
9.2.2.2.2 Capacitor Selection
9.2.2.2.2.1 Output Capacitor
The recommended value for the output capacitor is 22 μF. The architecture of the TPS6213x allows the use of
tiny ceramic output capacitors with low-equivalent series resistance (ESR). These capacitors provide low output
voltage ripple and are recommended. To keep its low resistance up to high frequencies and to get narrow
capacitance variation with temperature, it is recommended to use X7R or X5R dielectric. Using a higher value
can have some advantages like smaller voltage ripple and a tighter DC output accuracy in power save mode
(see Optimizing the TPS62130/40/50/60 Output Filter Application Report).
Note
In power save mode, the output voltage ripple depends on the output capacitance, its ESR, and the
peak inductor current. Using ceramic capacitors provides small ESR and low ripple.
9.2.2.2.2.2 Input Capacitor
For most applications, 10 µF will be sufficient and is recommended, though a larger value reduces input current
ripple further. The input capacitor buffers the input voltage for transient events and also decouples the converter
from the supply. A low-ESR multilayer ceramic capacitor is recommended for best filtering and should be placed
between PVIN and PGND as close as possible to those pins. Even though AVIN and PVIN must be supplied
from the same input source, it is required to place a capacitance of 0.1 μF from AVIN to AGND, to avoid
potential noise coupling. An RC, low-pass filter from PVIN to AVIN can be used but is not required.
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9.2.2.2.2.3 Soft-Start Capacitor
A capacitance connected between the SS/TR pin and AGND allows a user-programmable start-up slope of the
output voltage. A constant current source supports 2.5 µA to charge the external capacitance. The capacitor
required for a given soft-start ramp time for the output voltage is given by:
C SS = t SS ×
2.5mA
1.25V
[F ]
(10)
where
• CSS is the capacitance (F) required at the SS/TR pin.
• tSS is the desired soft-start ramp time (s).
Note
DC Bias effect: High capacitance ceramic capacitors have a DC Bias effect, which will have a strong
influence on the final effective capacitance. Therefore the right capacitor value has to be chosen
carefully. Package size and voltage rating in combination with dielectric material are responsible for
differences between the rated capacitor value and the effective capacitance.
9.2.2.3 Tracking Function
If a tracking function is desired, the SS/TR pin can be used for this purpose by connecting it to an external
tracking voltage. The output voltage tracks that voltage. If the tracking voltage is between 50 mV and 1.2 V, the
FB pin will track the SS/TR pin voltage as described in 方程式 11 and shown in 图 9-2.
VFB » 0.64 × VSS / TR
(11)
VSS/
TR [V]
1.2
0.8
0.4
0.2
0.4
0.6
0.8
VFB [V]
图 9-2. Voltage Tracking Relationship
Once the SS/TR pin voltage reaches approximately 1.2 V, the internal voltage is clamped to the internal
feedback voltage and device goes to normal regulation. This works for rising and falling tracking voltages with
the same behavior, as long as the input voltage is inside the recommended operating conditions. For decreasing
SS/TR pin voltage, the device does not sink current from the output. So, the resulting decrease of the output
voltage can be slower than the SS/TR pin voltage if the load is light. When driving the SS/TR pin with an external
voltage, do not exceed the voltage rating of the SS/TR pin which is VIN + 0.3 V.
If the input voltage drops into undervoltage lockout or even down to zero, the output voltage will go to zero,
independent of the tracking voltage. 图 9-3 shows how to connect devices to get ratiometric and simultaneous
sequencing by using the tracking function.
16
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VOUT1
PVIN
SW
AVIN
VOS
EN
PG
TPS62130
SS/TR
FB
DEF
AGND
FSW
PGND
PVIN
SW
AVIN
VOS
VOUT2
R1
EN
PG
TPS62130
SS/TR
R2
FB
DEF
AGND
FSW
PGND
Copyright © 2016, Texas Instruments Incorporated
图 9-3. Sequence For Ratiometric And Simultaneous Start-Up
The resistive divider of R1 and R2 can be used to change the ramp rate of VOUT2 faster, slower, or the same as
VOUT1.
A sequential start-up is achieved by connecting the PG pin of VOUT1 to the EN pin of VOUT2. A ratiometric startup sequence happens if both supplies are sharing the same soft-start capacitor. 方程式 10 calculates the softstart time, though the SS/TR current has to be doubled. Details about these and other tracking and sequencing
circuits are found in Sequencing and Tracking With the TPS621-Family and TPS821-Family Application Report.
Note
If the voltage at the FB pin is below its typical value of 0.8 V, the output voltage accuracy may have a
wider tolerance than specified.
9.2.2.4 Output Filter And Loop Stability
The devices of the TPS6213x family are internally compensated to be stable with L-C filter combinations
corresponding to a corner frequency to be calculated with 方程式 12:
f LC =
1
2p L × C
(12)
Proven nominal values for inductance and ceramic capacitance are given in 表 9-2 and are recommended for
use. Different values can work, but care has to be taken on the loop stability which will be affected. More
information including a detailed LC stability matrix can be found in Optimizing the TPS62130/40/50/60 Output
Filter Application Report.
The TPS6213x devices, both fixed and adjustable output voltage versions, include an internal 25-pF feedforward
capacitor, connected between the VOS and FB pins. This capacitor impacts the frequency behavior and sets a
pole and zero in the control loop with the resistors of the feedback divider, per 方程式 13 and 方程式 14:
f zero =
1
2p × R1 × 25 pF
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f pole =
1
2p × 25 pF
æ 1
1 ö
÷÷
× çç
+
è R1 R 2 ø
(14)
Though the TPS6213x devices are stable without the pole and zero being in a particular location, adjusting their
location to the specific needs of the application can provide better performance in power save mode, improved
transient response, or both. An external feedforward capacitor can also be added. A more detailed discussion on
the optimization for stability versus transient response can be found in Optimizing Transient Response of
Internally Compensated DC-DC Converters Application Report and Feedforward Capacitor to Improve Stability
and Bandwidth of TPS621/821-Family Application Report.
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9.2.3 Application Curves
VIN = 12 V, VOUT = 3.3 V, TA = 25°C, (unless otherwise noted)
100.0
100.0
90.0
90.0
80.0
70.0
VIN=12V
VIN=17V
Efficiency (%)
Efficiency (%)
80.0
60.0
50.0
40.0
70.0
60.0
30.0
20.0
20.0
10.0
10.0
0.001
0.01
0.1
Output Current (A)
1
0.0
10
IOUT=1mA
7
VOUT = 5 V
80.0
70.0
70.0
60.0
Efficiency (%)
Efficiency (%)
90.0
80.0
VIN=17V
VIN=12V
40.0
10
60.0
11
12
13
14
Input Voltage (V)
15
30.0
20.0
10.0
10.0
1
0.0
10
IOUT=1mA
IOUT=1A
7
8
9
10
11
12
13
14
Input Voltage (V)
15
VOUT = 5 V
图 9-6. Efficiency with 2.5 MHz
图 9-7. Efficiency with 2.5 MHz
100.0
100.0
90.0
90.0
80.0
80.0
70.0
VIN=12V
VIN=17V
VIN=5V
50.0
40.0
60.0
20.0
10.0
10.0
1
10
IOUT=1A IOUT=100mA
IOUT=10mA
IOUT=1mA
40.0
30.0
0.01
0.1
Output Current (A)
0.0
4
5
6
7
8
9 10 11 12 13 14 15 16 17
Input Voltage (V)
VOUT = 3.3 V
VOUT = 3.3 V
图 9-8. Efficiency with 1.25 MHz
图 9-9. Efficiency with 1.25 MHz
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17
50.0
20.0
0.001
16
70.0
30.0
0.0
0.0001
17
IOUT=100mA
VOUT = 5 V
60.0
16
40.0
20.0
0.01
0.1
Output Current (A)
IOUT=10mA
50.0
30.0
Efficiency (%)
Efficiency (%)
100.0
90.0
0.001
9
图 9-5. Efficiency with 1.25 MHz
100.0
0.0
0.0001
8
VOUT = 5 V
图 9-4. Efficiency with 1.25 MHz
50.0
IOUT=1A
IOUT=100mA
40.0
30.0
0.0
0.0001
IOUT=10mA
50.0
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100.0
100.0
90.0
90.0
80.0
80.0
70.0
70.0
60.0
VIN=12V
50.0
Efficiency (%)
Efficiency (%)
ZHCSB84F – NOVEMBER 2011 – REVISED NOVEMBER 2021
VIN=17V
VIN=5V
40.0
60.0
30.0
20.0
20.0
10.0
10.0
0.001
0.01
0.1
Output Current (A)
1
0.0
10
4
VOUT = 3.3 V
90.0
80.0
80.0
VIN=12V
60.0
Efficiency (%)
VIN=17V
VIN=5V
40.0
6
7
8
9 10 11 12 13 14 15 16 17
Input Voltage (V)
70.0
20.0
10.0
10.0
0.0
10
IOUT=10mA
IOUT=1mA
40.0
30.0
1
IOUT=100mA
50.0
20.0
0.01
0.1
Output Current (A)
IOUT=1A
60.0
30.0
3
4
5
6
7
8 9 10 11 12 13 14 15 16 17
Input Voltage (V)
VOUT = 1.8 V
VOUT = 1.8 V
图 9-12. Efficiency with 1.25 MHz
图 9-13. Efficiency with 1.25 MHz
100.0
100.0
90.0
90.0
80.0
80.0
70.0
70.0
60.0
VIN=12V
VIN=17V
50.0
VIN=5V
40.0
60.0
20.0
20.0
10.0
10.0
0.01
0.1
Output Current (A)
1
10
IOUT=100mA
40.0
30.0
0.001
IOUT=1A
50.0
30.0
0.0
0.0001
20
Efficiency (%)
70.0
Efficiency (%)
Efficiency (%)
100.0
90.0
0.001
5
图 9-11. Efficiency with 2.5 MHz
100.0
0.0
0.0001
IOUT=1A
VOUT = 3.3 V
图 9-10. Efficiency with 2.5 MHz
50.0
IOUT=1mA
IOUT=10mA
40.0
30.0
0.0
0.0001
IOUT=100mA
50.0
0.0
3
4
5
6
7
IOUT=10mA
IOUT=1mA
8 9 10 11 12 13 14 15 16 17
Input Voltage (V)
VOUT = 0.9 V
VOUT = 0.9 V
图 9-14. Efficiency with 1.25 MHz
图 9-15. Efficiency with 1.25 MHz
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3.40
3.40
Output Voltage (V)
Output Voltage (V)
VIN=17V
3.35
VIN=12V
3.30
VIN=5V
3.25
3.20
0.0001
0.001
0.01
0.1
Output Current (A)
1
图 9-16. Output Voltage Accuracy (Load
Regulation)
3.25
4
7
10
13
Input Voltage (V)
16
3.5
IOUT=3A
Switching Frequency (MHz)
Switching Frequency (MHz)
IOUT=2A
3
2.5
2
IOUT=0.5A
IOUT=1A
1.5
1
0.5
3
2.5
2
1.5
1
0.5
6
8
10
12
14
Input Voltage (V)
FSW = Low
16
0
18
VOUT = 5 V
4
3.5
Switching Frequency (MHz)
IOUT=3A
3
2.5
IOUT=0.5A
1
IOUT=1A
1.5
1
0.5
1.5
2
Output Current (A)
2.5
3
G000
VOUT = 5 V
图 9-19. Switching Frequency vs Output Current
4
IOUT=2A
0.5
FSW = Low
3.5
2
0
G000
图 9-18. Switching Frequency vs Input Voltage
0
IOUT=100mA
4
3.5
Switching Frequency (MHz)
IOUT=1A
图 9-17. Output Voltage Accuracy (Line Regulation)
4
0
3.30
3.20
10
IOUT=10mA
IOUT=1mA
3.35
3
2.5
2
1.5
1
0.5
4
6
FSW = Low
8
10
12
Input Voltage (V)
14
16
18
0
0.5
G000
VOUT = 3.3 V
图 9-20. Switching Frequency vs Input Voltage
Copyright © 2022 Texas Instruments Incorporated
0
FSW = Low
1
1.5
2
Output Current (A)
2.5
3
G000
VOUT = 3.3 V
图 9-21. Switching Frequency vs Output Current,
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4
4
3.5
IOUT=2A
3
Switching Frequency (MHz)
Switching Frequency (MHz)
3.5
IOUT=3A
2.5
2
IOUT=0.5A
1.5
IOUT=1A
1
2.5
2
1.5
1
0.5
0.5
0
3
3
5
7
9
11
Input Voltage (V)
FSW = Low
13
15
0
17
VOUT = 1.8 V
1
1.5
2
Output Current (A)
2.5
3
G000
VOUT = 1.8 V
图 9-23. Switching Frequency vs Output Current
3
3
2.5
IOUT=2A
Switching Frequency (MHz)
Switching Frequency (MHz)
0.5
FSW = Low
图 9-22. Switching Frequency vs Input Voltage
IOUT=3A
2
1.5
IOUT=1A
1
IOUT=0.5A
0.5
0
0
G000
3
5
7
9
11
Input Voltage (V)
FSW = Low
13
15
2.5
2
1.5
1
0.5
0
17
0
0.5
1
G000
VOUT = 1 V
1.5
2
Output Current (A)
FSW = Low
图 9-24. Switching Frequency vs Input Voltage
2.5
3
G000
VOUT = 1 V
图 9-25. Switching Frequency vs Output Current
6
0.05
0.04
Output Current (A)
Output Voltage Ripple (V)
5.5
0.03
VIN=17V
VIN=5V
0.02
4
3.5
3
2.5
25°C
85°C
2
1
VIN=12V
0
0.3
0.6
0.9
1.2 1.5 1.8 2.1
Output Current (A)
2.4
图 9-26. Output Voltage Ripple
22
−40°C
1.5
0.01
0
5
4.5
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2.7
3
0.5
0
4
5
6
7
8
9 10 11 12 13 14 15 16 17
Input Voltage (V)
图 9-27. Maximum Output Current
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100
100
90
80
70
VIN=17V
PSRR (dB)
PSRR (dB)
VIN=5V
80
VIN=12V
70
60
50
40
VIN=17V
60
50
40
30
30
20
20
VOUT=3.3V, IOUT=1A
L=2.2uH (XFL4020)
Cin=10uF, Cout=22uF
10
0
VIN=12V
90
VIN=5V
10
100
1k
10k
Frequency (Hz)
100k
1M
0
10
100
G000
FSW = 2.5 Mhz
1k
10k
Frequency (Hz)
100k
1M
G000
FSW = 2.5 MHz
图 9-28. Power Supply Rejection Ratio
VIN = 12
VOUT=3.3V, IOUT=0.1A
L=2.2uH (XFL4020)
Cin=10uF, Cout=22uF
10
VOUT = 3.3 V with 50 mV/Div
图 9-29. Power Supply Rejection Ratio
IOUT = 0.5 to 3 to 0.5 A
图 9-30. PWM-PSM-Transition
图 9-31. Load Transient Response
图 9-32. Load Transient Response of 图 9-31,
Rising Edge
图 9-33. Load Transient Response of 图 9-31,
Falling Edge
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图 9-34. Start-Up Into 100 mA
图 9-35. Start-Up Into 3 A
IOUT = 1 A
IOUT = 10 mA
图 9-37. Typical Operation In Power Save Mode
125
125
115
115
Free−Air Temperature (°C)
Free−Air Temperature (°C)
图 9-36. Typical Operation In PWM Mode
105
95
85
75
65
55
95
85
75
65
0
0.5
1
1.5
2
2.5
Output Current (A)
FSW = 2.5 MHz
3
3.5
TPS62130EVM
L = 2.2 µH (XFL4020)
图 9-38. Maximum Ambient Temperature
24
105
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55
0
2
4
6
8
Output Power (W)
FSW = 2.5 MHz
10
12
TPS62130EVM
L = 2.2 µH (XFL4020)
图 9-39. Maximum Ambient Temperature
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9.3 System Examples
9.3.1 LED Power Supply
The TPS62130 can be used as a power supply for power LEDs. The FB pin can be easily set down to lower
values than nominal by using the SS/TR pin. With that, the voltage drop on the sense resistor is low to avoid
excessive power loss. Since this pin provides 2.5 µA, the feedback pin voltage can be adjusted by an external
resistor per 方程式 15. This drop, proportional to the LED current, is used to regulate the output voltage (anode
voltage) to a proper level to drive the LED. Both analog and PWM dimming are supported with the TPS62130. 图
9-40 shows an application circuit, tested with analog dimming:
(4 .. 17) V
10uF
2.2 µH
PVIN
SW
AVIN
VOS
PG
EN
0.1uF
ADIM
22uF
TPS62130
FB
SS/TR
187k
DEF
AGND
FSW
PGND
0.1R
图 9-40. Single Power LED Supply
The resistor at SS/TR sets the FB voltage to a level of approximately 300 mV and is calculated from 方程式 15.
V FB = 0.64 × 2.5mA × R SS / TR
(15)
The device now supplies a constant current, set by the resistor at the FB pin, by regulating the output voltage
accordingly. The minimum input voltage has to be rated according the forward voltage needed by the LED used.
More information is available in the Step-Down LED Driver With Dimming With the TPS621-Family and TPS821Family Application Report.
9.3.2 Active Output Discharge
The TPS62130A pulls the PG pin Low when the device is shut down by EN, UVLO, or thermal shutdown.
Connecting PG to VOUT through a resistor can be used to discharge VOUT in those cases (see 图 9-41). The
discharge rate can be adjusted by R3, which is also used to pull up the PG pin in normal operation. For reliability,
keep the maximum current into the PG pin less than 10 mA.
(3 .. 17)V
1 / 2.2 µH
PVIN
Vout / 3A
SW
TPS62130A
AVIN
10uF
0.1uF
3.3nF
VOS
EN
PG
SS/TR
FB
DEF
AGND
FSW
PGND
R3
R1
22uF
R2
图 9-41. Discharge VOUT Through PG Pin with TPS62130A
9.3.3 –3.3-V Inverting Power Supply
The TPS62130 can be used as an inverting power supply by rearranging external circuitry as shown in 图 9-42.
As the former GND node now represents a voltage level below system ground, the voltage difference between
VIN and VOUT has to be limited for operation to the maximum supply voltage of 17 V (see 方程式 16).
VIN + VOUT £ VIN max
(16)
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10uF
2.2µH
(3 .. 13.7)V
PVIN
SW
AVIN
VOS
10uF
EN
0.1uF
PG
1.21M
TPS62130
SS/TR
22uF
FB
3.3nF
DEF
AGND
FSW
PGND
383k
-3.3V
图 9-42. –3.3-V Inverting Power Supply
The transfer function of the inverting power supply configuration differs from the buck mode transfer function,
incorporating a right half plane zero additionally. The loop stability has to be adapted and an output capacitance
of at least 22 µF is recommended. A detailed design example is given in Using the TPS6215x in an Inverting
Buck-Boost Topology Application Report.
9.3.4 Various Output Voltages
The following example circuits show how to use the various devices and configure the external circuitry to furnish
different output voltages at 3 A.
(5 .. 17)V
5V / 3A
1 / 2.2 µH
10uF
PVIN
SW
AVIN
VOS
100k
0.1uF
PG
EN
22uF
TPS62133
FB
SS/TR
3.3nF
DEF
AGND
FSW
PGND
图 9-43. 5-V/3-A Power Supply
(3.3 .. 17)V
10uF
3.3V / 3A
1 / 2.2 µH
PVIN
SW
AVIN
VOS
100k
0.1uF
PG
EN
22uF
TPS62132
SS/TR
FB
3.3nF
DEF
AGND
FSW
PGND
图 9-44. 3.3-V/3-A Power Supply
26
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1 / 2.2 µH
(3 .. 17)V
10uF
PVIN
SW
AVIN
VOS
2.5V / 3A
100k
0.1uF
PG
EN
390k
22uF
TPS62130
FB
SS/TR
3.3nF
DEF
AGND
FSW
PGND
180k
图 9-45. 2.5-V/3-A Power Supply
(3 .. 17)V
1.8V / 3A
1 / 2.2 µH
PVIN
SW
AVIN
VOS
100k
0.1uF
10uF
PG
EN
22uF
TPS62131
FB
SS/TR
3.3nF
DEF
AGND
FSW
PGND
图 9-46. 1.8-V/3-A Power Supply
1 / 2.2 µH
(3 .. 17)V
10uF
PVIN
SW
AVIN
VOS
1.5V / 3A
100k
0.1uF
PG
EN
130k
22uF
TPS62130
FB
SS/TR
3.3nF
DEF
AGND
FSW
PGND
150k
图 9-47. 1.5-V/3-A Power Supply
1 / 2.2 µH
(3 .. 17)V
10uF
PVIN
SW
AVIN
VOS
1.2V / 3A
100k
0.1uF
PG
EN
75k
22uF
TPS62130
FB
SS/TR
3.3nF
DEF
AGND
FSW
PGND
150k
图 9-48. 1.2-V/3-A Power Supply
1 / 2.2 µH
(3 .. 17)V
10uF
PVIN
SW
AVIN
VOS
1V / 3A
100k
0.1uF
PG
EN
51k
22uF
TPS62130
SS/TR
FB
3.3nF
DEF
AGND
FSW
PGND
200k
图 9-49. 1-V/3-A Power Supply
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10 Power Supply Recommendations
The TPS6213x are designed to operate from a 3-V to 17-V input voltage supply. The output current of the input
power supply needs to be rated according to the output voltage and the output current of the power rail
application.
11 Layout
11.1 Layout Guidelines
A proper layout is critical for the operation of a switched mode power supply, even more at high switching
frequencies. Therefore, the PCB layout of the TPS6213x demands careful attention to ensure operation and to
get the performance specified. A poor layout can lead to issues like the following:
•
•
•
•
Poor regulation (both line and load)
Stability and accuracy weaknesses
Increased EMI radiation
Noise sensitivity
See 图 11-1 for the recommended layout of the TPS6213x, which is designed for common external ground
connections. Therefore, both AGND and PGND pins are directly connected to the exposed thermal pad. On the
PCB, the direct common ground connection of AGND and PGND to the exposed thermal pad and the system
ground (ground plane) is mandatory. Also connect the VOS pin in the shortest way to VOUT at the output
capacitor. To avoid noise coupling into the VOS line, this connection should be separated from the VOUT power
line/plane as shown in 节 11.2.
Provide low inductive and resistive paths for loops with high di/dt. Therefore, paths conducting the switched load
current should be as short and wide as possible. Provide low capacitive paths (with respect to all other nodes)
for wires with high dv/dt. Therefore, the input and output capacitance should be placed as close as possible to
the IC pins and parallel wiring over long distances as well as narrow traces should be avoided. Loops which
conduct an alternating current should outline an area as small as possible, as this area is proportional to the
energy radiated.
Sensitive nodes like FB and VOS need to be connected with short wires and not nearby high dv/dt signals (for
example, SW). As they carry information about the output voltage, they should be connected as close as
possible to the actual output voltage (at the output capacitor). The capacitor on the SS/TR pin and on AVIN as
well as the FB resistors, R1 and R2, should be kept close to the IC and connect directly to those pins and the
system ground plane.
The exposed thermal pad must be soldered to the circuit board for mechanical reliability and to achieve
appropriate power dissipation.
The recommended layout is implemented on the EVM and shown in the TPS6213x Buck Converter Evaluation
Module User's Guide. Additionally, the Gebers for HPA505 EVM are available for download.
28
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11.2 Layout Example
space
AGND
C5
R1
C7
FB
AGND
DEF
SS/TR
PG
AVIN
SW
PGND
SW
PGND
SW
PVIN
EN
PVIN
VOS
VIN
FSW
R2
C3
C1
L1
VOUT
GND
图 11-1. Layout Example
11.3 Thermal Information
Implementation of integrated circuits in low-profile and fine-pitch surface-mount packages typically requires
special attention to power dissipation. Many system-dependent issues such as thermal coupling, airflow, added
heat sinks and convection surfaces, and the presence of other heat-generating components affect the powerdissipation limits of a given component.
Three basic approaches for enhancing thermal performance are listed below:
• Improving the power dissipation capability of the PCB design
• Improving the thermal coupling of the component to the PCB by soldering the Exposed Thermal Pad
• Introducing airflow in the system
For more details on how to use the thermal parameters, see the application notes: Thermal Characteristics of
Linear and Logic Packages Using JEDEC PCB Designs Application Report and Semiconductor and IC Package
Thermal Metrics Application Report.
The TPS6213x is designed for a maximum operating junction temperature (TJ) of 125°C. Therefore, the
maximum output power is limited by the power losses that can be dissipated over the actual thermal resistance,
given by the package and the surrounding PCB structures. Since the thermal resistance of the package is fixed,
increasing the size of the surrounding copper area and improving the thermal connection to the IC can reduce
the thermal resistance. To get an improved thermal behavior, it is recommended to use top layer metal to
connect the device with wide and thick metal lines. Internal ground layers can connect to vias directly under the
IC for improved thermal performance.
If short circuit or overload conditions are present, the device is protected by limiting internal power dissipation.
Experimental data, taken from the TPS62130 EVM, shows the maximum ambient temperature (without
additional cooling like airflow or heat sink), that can be allowed to limit the junction temperature to at most 125°C
(see 图 9-38).
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12 Device and Documentation Support
12.1 Device Support
12.1.1 第三方产品免责声明
TI 发布的与第三方产品或服务有关的信息,不能构成与此类产品或服务或保修的适用性有关的认可,不能构成此
类产品或服务单独或与任何 TI 产品或服务一起的表示或认可。
12.2 Documentation Support
12.2.1 Related Documentation
•
•
•
•
•
•
•
•
•
•
•
Texas Instruments, Voltage Margining Using the TPS62130 Application Report
Texas Instruments, Using the TPS62150 as Step-Down LED Driver With Dimming Application Report
Texas Instruments, Using the TPS6215x in an Inverting Buck-Boost Topology Application Report
Texas Instruments, Optimizing the TPS62130/40/50/60/70 Output Filter Application Report
Texas Instruments, TPS62130/40/50 Sequencing and Tracking Application Report
Texas Instruments, Optimizing Transient Response of Internally Compensated dc-dc Converters With
Feedforward Capacitor Application Report
Texas Instruments, Using a Feedforward Capacitor to Improve Stability and Bandwidth of
TPS62130/40/50/60/70 Application Report
Texas Instruments, Thermal Characteristics of Linear and Logic Packages Using JEDEC PCB Designs
Application Report
Texas Instruments, Semiconductor and IC Package Thermal Metrics Application Report
Texas Instruments, TPS62130EVM-505, TPS62140EVM-505, and TPS62150EVM-505 Evaluation Modules
User's Guide
Texas Instruments, EVM Gerber Data
12.3 接收文档更新通知
要接收文档更新通知,请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册,即可每周接收产品信息更
改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
12.4 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料,可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范,并且不一定反映 TI 的观点;请参阅
TI 的《使用条款》。
12.5 Trademarks
DCS-Control™ and TI E2E™ are trademarks of Texas Instruments.
所有商标均为其各自所有者的财产。
12.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.7 术语表
TI 术语表
30
本术语表列出并解释了术语、首字母缩略词和定义。
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TPS62130, TPS62130A, TPS62131, TPS62132, TPS62133
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ZHCSB84F – NOVEMBER 2011 – REVISED NOVEMBER 2021
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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Product Folder Links: TPS62130 TPS62130A TPS62131 TPS62132 TPS62133
31
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Copyright © 2021,德州仪器 (TI) 公司
PACKAGE OPTION ADDENDUM
www.ti.com
15-Aug-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS62130ARGTR
ACTIVE
VQFN
RGT
16
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PA6I
Samples
TPS62130ARGTT
ACTIVE
VQFN
RGT
16
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PA6I
Samples
TPS62130RGTR
ACTIVE
VQFN
RGT
16
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PTSI
Samples
TPS62130RGTT
ACTIVE
VQFN
RGT
16
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PTSI
Samples
TPS62131RGTR
ACTIVE
VQFN
RGT
16
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
QVX
Samples
TPS62131RGTT
ACTIVE
VQFN
RGT
16
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
QVX
Samples
TPS62132RGTR
ACTIVE
VQFN
RGT
16
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
QVY
Samples
TPS62132RGTT
ACTIVE
VQFN
RGT
16
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
QVY
Samples
TPS62133RGTR
ACTIVE
VQFN
RGT
16
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
QVZ
Samples
TPS62133RGTT
ACTIVE
VQFN
RGT
16
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
QVZ
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of