TPS73201-EP,, TPS73215-EP
TPS73216-EP, TPS73218-EP, TPS73225-EP
TPS73230-EP, TPS73233-EP, TPS73250-EP
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SGLS346 – JUNE 2006
CAP-FREE NMOS 250-mA LOW DROPOUT REGULATOR
WITH REVERSE CURRENT PROTECTION
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Controlled Baseline
– One Assembly/Test Site, One Fabrication
Site
Extended Temperature Performance of
–55°C to 125°C
Enhanced Diminishing Manufacturing
Sources (DMS) Support
Enhanced Product-Change Notification
Qualification Pedigree (1)
Stable with No Output Capacitor or Any Value
or Type of Capacitor
Input Voltage Range: 1.7 V to 5.5 V
Ultralow Dropout Voltage:
40 mV Typ at 250 mA
Excellent Load Transient Response—with or
without Optional Output Capacitor
New NMOS Topology Provides Low Reverse
Leakage Current
Low Noise: 30 µVRMS Typ (10 kHz to 100 kHz)
0.5% Initial Accuracy
1% Overall Accuracy (Line, Load, and
Temperature)
Less Than 1 µA Max IQ in Shutdown Mode
Thermal Shutdown and Specified Min/Max
Current Limit Protection
Available in Multiple Output Voltage Versions
– Fixed Outputs of 1.2 V to 5 V
– Adjustable Outputs from 1.2 V to 5.5 V
– Custom Outputs Available
Portable/Battery-Powered Equipment
Post-Regulation for Switching Supplies
Noise-Sensitive Circuitry such as VCOs
Point of Load Regulation for DSPs, FPGAs,
ASICs, and Microprocessors
Optional
Optional
VIN
IN
EN
GND
Component qualification in accordance with JEDEC and
industry standards to ensure reliable operation over an
extended temperature range. This includes, but is not limited
to, Highly Accelerated Stress Test (HAST) or biased 85/85,
temperature cycle, autoclave or unbiased HAST,
electromigration, bond intermetallic life, and mold compound
life. Such qualification testing should not be viewed as
justifying use of this component beyond specified
performance and environmental limits.
NR
Optional
Typical Application Circuit for Fixed-Voltage Versions
DESCRIPTION
The TPS732xx family of low-dropout (LDO) voltage
regulators uses a new topology: an NMOS pass
element in a voltage-follower configuration. This
topology is stable using output capacitors with low
ESR and even allows operation without a capacitor.
It also provides high reverse blockage (low reverse
current) and ground pin current that is nearly
constant over all values of output current.
The TPS732xx uses an advanced BiCMOS process
to yield high precision while delivering low dropout
voltages and low ground pin current. Current
consumption, when not enabled, is under 1 µA and
ideal for portable applications. The low output noise
(30 µVRMS with 0.1 µF CNR) is ideal for powering
VCOs. These devices are protected by thermal
shutdown and foldback current limit.
DCQ PACKAGE
SOT223
(TOP VIEW)
DBV PACKAGE
SOT23
(TOP VIEW)
(1)
VOUT
OUT
TPS732xx
IN
1
GND
2
EN
3
5
TAB IS GND
OUT
1
4
2
3
4
5
DRB PACKAGE
3mm x 3mm SON
(TOP VIEW)
OUT 1
N/C 2
NR/FB 3
GND 4
NR/FB
IN
8
7
6
5
IN
N/C
N/C
EN
GND
EN
OUT
NR/FB
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006, Texas Instruments Incorporated
TPS73201-EP,, TPS73215-EP
TPS73216-EP, TPS73218-EP, TPS73225-EP
TPS73230-EP, TPS73233-EP, TPS73250-EP
www.ti.com
SGLS346 – JUNE 2006
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
ORDERING INFORMATION (1)
VOUT (2)
PRODUCT
XX is the nominal output voltage (for example, 25 = 2.5 V, 01 = Adjustable (3)).
YYY is the package designator.
Z is the package quantity.
TPS732xxyyyz
(1)
(2)
(3)
For the most current specification and package information, see the Package Option Addendum located at the end of this data sheet or
see the TI website at www.ti.com.
Output voltages from 1.2 V to 4.5 V in 50-mV increments are available through the use of innovative factory EEPROM programming;
minimum order quantities may apply. Contact factory for details and availability.
For fixed 1.2 V operation, tie FB to OUT.
ABSOLUTE MAXIMUM RATINGS
over operating junction temperature range unless otherwise noted (1)
VIN range
–0.3 V to 6 V
VEN range
–0.3 V to 6 V
VOUT range
–0.3 V to 5.5 V
Peak output current
Internally limited
Output short-circuit duration
Indefinite
Continuous total power dissipation
See Dissipation Ratings Table
Ambient temperature range, TA
–55°C to 150°C
Storage temperature range
–65°C to 150°C
ESD rating, HBM
2 kV
ESD rating, CDM
500 V
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under the Electrical Characteristics
is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
POWER DISSIPATION RATINGS (1)
(1)
(2)
(3)
2
BOARD
PACKAGE
RΘJC
RΘJA
DERATING FACTOR
ABOVE TA = 25°C
TA ≤ 25°C
POWER
RATING
TA = 70°C
POWER
RATING
TA = 85°C
POWER
RATING
TA = 125°C
POWER
RATING
Low-K (2)
DBV
64°C/W
255°C/W
3.9 mW/°C
450 mW
275 mW
215 mW
58 mW
High-K (3)
DBV
64°/W
180°C/W
5.6 mW/°C
638 mW
388 mW
305 mW
83 mW
See Power Dissipation in the Applications section for more information related to thermal design.
The JEDEC Low-K (1s) board design used to derive this data was a 3 inch × 3 inch, two-layer board with 2-ounce copper traces on top
of the board.
The JEDEC High-K (2s2p) board design used to derive this data was a 3 inch × 3 inch, multilayer board with 1-ounce internal power and
ground planes and 2-ounce copper traces on the top and bottom of the board.
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TPS73216-EP, TPS73218-EP, TPS73225-EP
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SGLS346 – JUNE 2006
ELECTRICAL CHARACTERISTICS
Over operating temperature range (TA = –55°C to +125°C), VIN = VOUT(nom) + 0.5 V (1), IOUT = 10 mA, VEN = 1.7 V, and
COUT = 0.1 µF, unless otherwise noted. Typical values are at TA = 25°C
PARAMETER
TEST CONDITIONS
VIN
Input voltage range (1)
VFB
Internal reference (TPS73201)
MIN
TA = 25°C
1.198
Output voltage range (TPS73201) (2)
VOUT
∆VOUT%/∆VIN
Accuracy (1)
1.2
VFB
Nominal
TA = 25°C
VIN, IOUT, and T
VOUT + 0.5 V ≤ VIN ≤ 5.5 V;
10 mA ≤ IOUT ≤ 250 mA
Line regulation (1)
TYP
1.7
MAX
UNIT
5.5
V
1.21
V
5.5 – VDO
V
±0.5%
–1%
VOUT(nom) + 0.5 V ≤ VIN ≤ 5.5 V
±0.5%
+1%
0.01
1 mA ≤ IOUT ≤ 250 mA
0.002
10 mA ≤ IOUT ≤ 250 mA
0.0005
%/V
∆VOUT%/∆IOUT
Load regulation
VDO
Dropout voltage (3)
(VIN = VOUT (nom) – 0.1V)
IOUT = 250 mA
ZO(DO)
Output impedance in dropout
1.7 V ≤ VIN ≤ VOUT + VDO
ICL
Output current limit
VOUT = 0.9 × VOUT(nom)
ISC
Short-circuit current
VOUT = 0 V
300
IREV
Reverse leakage current (4) (–IIN)
VEN ≤ 0.5 V, 0 V ≤ VIN ≤ VOUT
0.1
15
IOUT = 10 mA (IQ)
400
550
IOUT = 250 mA
650
950
VEN ≤ 0.5 V, VOUT ≤ VIN ≤ 5.5
0.02
1
µA
.1
.45
µA
IGND
Ground pin current
ISHDN
Shutdown current (IGND)
IFB
FB pin current (TPS73201)
PSRR
Power-supply rejection ratio
(ripple rejection)
VN
Output noise voltage
BW = 10 Hz to 100 kHz
tSTR
Startup time
VEN(HI)
Enable high (enabled)
VEN(LO)
Enable low (shutdown)
IEN(HI)
Enable pin current (enabled)
TSD
Thermal shutdown temperature
TA
Operating ambient temperature
(1)
(2)
(3)
(4)
40
%/mA
150
mV
600
mA
Ω
0.25
250
425
f = 100 Hz, IOUT = 250 mA
58
f = 10 kHz, IOUT = 250 mA
37
COUT = 10 µF, No CNR
27 × VOUT
COUT = 10 µF, CNR = 0.01 µF
8.5 × VOUT
VOUT = 3 V, RL = 30 Ω
COUT = 1 µF, CNR= 0.01 µF
mA
µVRMS
µs
VIN
0
VEN = 5.5 V
0.02
Shutdown, Temperature increasing
160
Reset, Temperature decreasing
140
–55
µA
dB
600
1.7
µA
V
0.5
V
0.1
µA
°C
125
°C
Minimum VIN = VOUT + VDO or 1.7 V, whichever is greater.
TPS73201 is tested at VOUT = 2.5 V.
VDO is not measured for the TPS73214, TPS73215, or TPS73216, since minimum VIN = 1.7 V.
Fixed-voltage versions only; see the Applications section for more information.
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SGLS346 – JUNE 2006
6
5
Years Estimated Life
4
3
2
1
0
100
110
120
130
140
150
Continuous Tj (°C)
A.
Tj = θJA × W + TA (at standard JESD 51 conditions)
Figure 1. Estimated Device Life at Elevated Temperatures Electromigration Fail Mode
4
Submit Documentation Feedback
160
TPS73201-EP,, TPS73215-EP
TPS73216-EP, TPS73218-EP, TPS73225-EP
TPS73230-EP, TPS73233-EP, TPS73250-EP
www.ti.com
SGLS346 – JUNE 2006
FUNCTIONAL BLOCK DIAGRAMS
IN
Charge
Pump
EN
Thermal
Protection
Ref
Servo
27kΩ
Bandgap
Error
Amp
Current
Limit
OUT
8kΩ
GND
R1
R1 + R2 = 80kΩ
R2
NR
Figure 2. Fixed Voltage Version
IN
Table 1. Standard 1%
Resistor Values for
Common Output Voltages
VOUT
Charge
Pump
EN
Thermal
Protection
Ref
Servo
27kΩ
Bandgap
Error
Amp
8kΩ
R2
1.2V
Short
Open
1.5V
23.2kΩ
95.3kΩ
1.8V
28.0kΩ
56.2kΩ
2.5V
39.2kΩ
36.5kΩ
2.8V
44.2kΩ
33.2kΩ
3.0V
46.4kΩ
30.9kΩ
3.3V
52.3kΩ
30.1kΩ
5.0V
78.7kΩ
24.9kΩ
OUT
Current
Limit
GND
R1
NOTE: VOUT = (R1 + R2)/R2 × 1.204;
R1R2 ≅ 19kΩ for best
R1
accuracy.
80kΩ
FB
R2
Figure 3. Adjustable Voltage Version
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TPS73201-EP,, TPS73215-EP
TPS73216-EP, TPS73218-EP, TPS73225-EP
TPS73230-EP, TPS73233-EP, TPS73250-EP
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SGLS346 – JUNE 2006
PIN ASSIGNMENTS
DBV PACKAGE
SOT23
(TOP VIEW)
IN
1
GND
2
EN
3
DRB PACKAGE
3mm x 3mm SON
(TOP VIEW)
DCQ PACKAGE
SOT223
(TOP VIEW)
OUT
N/C
NR/FB
GND
TAB IS GND
5
OUT
4
NR/FB
1
2
IN
OUT
3
4
1
2
3
4
8 IN
7 N/C
6 N/C
5 EN
5
GND
EN
NR/FB
TERMINAL FUNCTIONS
TERMINAL
6
NAME
SOT23
(DBV)
PIN NO.
SOT223
(DCQ)
PIN NO.
3×3 SON
(DRB)
PIN NO.
DESCRIPTION
IN
1
1
8
GND
2
3
4, Pad
Unregulated input supply
EN
3
5
5
Driving the enable pin (EN) high turns on the regulator. Driving this pin low puts
the regulator into shutdown mode. See the Shutdown section under Applications
Information for more details. EN can be connected to IN if not used.
NR
4
4
3
Fixed voltage versions only—connecting an external capacitor to this pin bypasses
noise generated by the internal bandgap, reducing output noise to very low levels.
FB
4
4
3
Adjustable voltage version only—this is the input to the control loop error amplifier,
and is used to set the output voltage of the device.
OUT
5
2
1
Output of the Regulator. There are no output capacitor requirements for stability.
Ground
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SGLS346 – JUNE 2006
TYPICAL CHARACTERISTICS
For all voltage versions at TJ = 25°C, VIN = VOUT(nom) + 0.5 V, IOUT = 10 mA, VEN = 1.7 V, and COUT = 0.1 µF, unless otherwise
noted.
LOAD REGULATION
LINE REGULATION
0.5
0.20
Referred to IOUT = 10mA
−40_C
+25_C
+125_C
Change in VOUT (%)
0.3
0.2
0.1
0
−0.1
−0.2
−0.3
Referred to VIN = VOUT + 0.5V at IOUT = 10mA
0.15
Change in VOUT (%)
0.4
0.10
+25_ C
+125_C
0.05
0
−0.05
−40_ C
−0.10
−0.15
−0.4
−0.5
−0.20
0
50
100
150
200
0
250
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VIN − VOUT (V)
IOUT (mA)
Figure 4.
Figure 5.
DROPOUT VOLTAGE vsOUTPUT CURRENT
DROPOUT VOLTAGE vs TEMPERATURE
100
100
TPS73225DBV
80
80
TPS73225DBV
IOUT = 250mA
60
VDO (mV)
VDO (mV)
+125_ C
+25_ C
40
60
40
20
20
−40_C
0
−50
0
0
50
100
150
200
250
−25
0
25
50
75
100
125
Temperature (_C)
IOUT (mA)
Figure 6.
Figure 7.
OUTPUT VOLTAGE ACCURACY HISTOGRAM
OUTPUT VOLTAGE DRIFT HISTOGRAM
30
18
IOUT = 10mA
16
25
I OUT = 10mA
All Voltage Versions
Percent of Units (%)
20
15
10
12
10
8
6
4
5
2
0
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
10
20
30
40
50
60
70
80
90
100
0
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Percent of Units (%)
14
VOUT Error (%)
Worst Case dVOUT/dT (ppm/_ C)
Figure 8.
Figure 9.
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TPS73216-EP, TPS73218-EP, TPS73225-EP
TPS73230-EP, TPS73233-EP, TPS73250-EP
www.ti.com
SGLS346 – JUNE 2006
TYPICAL CHARACTERISTICS (continued)
For all voltage versions at TJ = 25°C, VIN = VOUT(nom) + 0.5 V, IOUT = 10 mA, VEN = 1.7 V, and COUT = 0.1 µF, unless otherwise
noted.
GROUND PIN CURRENT vs OUTPUT CURRENT
GROUND PIN CURRENT vs TEMPERATURE
1000
800
900
700
IOUT = 250mA
800
600
600
I GND (µA)
I GND (µA)
700
500
400
300
100
50
100
150
200
VIN = 5.5V
VIN = 4V
VIN = 2V
0
−50
250
−25
0
25
50
75
100
IOUT (mA)
Temperature (_C)
Figure 10.
Figure 11.
CURRENT LIMIT vs VOUT
(FOLDBACK)
GROUND PIN CURRENT in SHUTDOWN
vs TEMPERATURE
500
125
1
450
VENABLE = 0.5V
VIN = VOUT + 0.5V
ICL
400
350
300
IGND (µA)
Current Limit (mA)
300
100
0
0
400
200
VIN = 5.5V
VIN = 4V
VIN = 2V
200
500
ISC
250
200
0.1
150
100
50
TPS73233
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0.01
−50
3.5
25
50
Figure 12.
Figure 13.
75
100
125
CURRENT LIMIT vs TEMPERATURE
600
600
550
550
500
500
Current Limit (mA)
Current Limit (mA)
0
Temperature (_C)
CURRENT LIMIT vs VIN
450
400
350
300
450
400
350
300
250
1.5
8
−25
VOUT (V)
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
250
−50
−25
0
25
50
VIN (V)
Temperature (_ C)
Figure 14.
Figure 15.
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100
125
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SGLS346 – JUNE 2006
TYPICAL CHARACTERISTICS (continued)
For all voltage versions at TJ = 25°C, VIN = VOUT(nom) + 0.5 V, IOUT = 10 mA, VEN = 1.7 V, and COUT = 0.1 µF, unless otherwise
noted.
PSRR (RIPPLE REJECTION) vs FREQUENCY
PSRR (RIPPLE REJECTION) vs VIN – VOUT
40
90
IOUT = 100mA
COUT = Any
80
35
30
IOUT = 1mA
COUT = 10µF
60
50
IO = 100mA
CO = 1µF
IOUT = 1mA
C OUT = Any
40
25
PSRR (dB)
Ripple Rejection (dB)
70
IOUT = 1mA
COUT = 1µF
20
15
30
20
IOUT = Any
COUT = 0µF
10
VIN = VOUT + 1V
0
10
100
1k
10k
10
I OUT = 100mA
COUT = 10µF
Frequency = 100kHz
COUT = 10µF
CNR = 0.01µF
5
0
100k
1M
0
10M
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Frequency (Hz)
VIN − VOUT (V)
Figure 16.
Figure 17.
NOISE SPECTRAL DENSITY
CNR = 0 µF
NOISE SPECTRAL DENSITY
CNR = 0.01 µF
1
1.8
2.0
1
eN (µV/√Hz)
eN (µV/√Hz)
C OUT = 1µF
COUT = 0µF
0.1
COUT = 10µF
COUT = 1µF
0.1
COUT = 0µF
COUT = 10µF
IOUT = 150mA
IOUT = 150mA
0.01
0.01
10
100
1k
10k
100k
10
100
1k
Frequency (Hz)
Frequency (Hz)
Figure 18.
Figure 19.
RMS NOISE VOLTAGE vs COUT
10k
100k
RMS NOISE VOLTAGE vs CNR
60
140
50
120
VOUT = 5.0V
VOUT = 5.0V
100
30
VN (RMS)
VN (RMS)
40
VOUT = 3.3V
20
10
20
CNR = 0.01µF
10Hz < Frequency < 100kHz
0.1
1
0
10
VOUT = 3.3V
60
40
VOUT = 1.5V
0
80
VOUT = 1.5V
COUT = 0µF
10Hz < Frequency < 100kHz
1p
10p
100p
COUT (µF)
CNR (F)
Figure 20.
Figure 21.
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10n
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TPS73201-EP,, TPS73215-EP
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www.ti.com
SGLS346 – JUNE 2006
TYPICAL CHARACTERISTICS (continued)
For all voltage versions at TJ = 25°C, VIN = VOUT(nom) + 0.5 V, IOUT = 10 mA, VEN = 1.7 V, and COUT = 0.1 µF, unless otherwise
noted.
TPS73233
LOAD TRANSIENT RESPONSE
VIN = 3.8V
TPS73233
LINE TRANSIENT RESPONSE
COUT = 0µF
50mV/tick
IOUT = 250mA
VOUT
COUT = 0µF
50mV/div
COUT = 1µF
50mV/tick
COUT = 10µF
50mV/tick
VOUT
VOUT
VOUT
C OUT = 100µF
50mV/div
5.5V
250mA
10mA
4.5V
1V/div
VIN
I OUT
10µs/div
10µs/div
Figure 22.
Figure 23.
TPS73233
TURN-ON RESPONSE
TPS73233
TURN-OFF RESPONSE
RL = 1kΩ
COUT = 0µF
RL = 20Ω
COUT = 10µF
VOUT
R L = 20Ω
C OUT = 1µF
R L = 20Ω
C OUT = 1µF
1V/div
RL = 1kΩ
COUT = 0µF
RL = 20Ω
COUT = 10µF
VOUT
2V
2V
VEN
1V/div
1V/div
0V
0V
VEN
100µs/div
100µs/div
Figure 24.
Figure 25.
TPS73233
POWER UP / POWER DOWN
IENABLE vs TEMPERATURE
10
6
5
4
VIN
VOUT
IENABLE (nA)
3
Volts
= 0.5V/µs
dt
50mA/tick
1V/div
VOUT
dVIN
2
1
1
0.1
0
−1
−2
50ms/div
0.01
−50
−25
0
25
50
Temperature (°C)
Figure 26.
10
Figure 27.
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100
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TPS73230-EP, TPS73233-EP, TPS73250-EP
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SGLS346 – JUNE 2006
TYPICAL CHARACTERISTICS (continued)
For all voltage versions at TJ = 25°C, VIN = VOUT(nom) + 0.5 V, IOUT = 10 mA, VEN = 1.7 V, and COUT = 0.1 µF, unless otherwise
noted.
TPS73201
IFB vs TEMPERATURE
60
160
55
140
50
120
45
100
I FB (nA)
VN (rms)
TPS73201
RMS NOISE VOLTAGE vs CADJ
40
35
30
25
80
60
VOUT = 2.5V
COUT = 0µF
R1 = 39.2kΩ
10Hz < Frequency < 100kHz
20
10p
100p
40
20
1n
10n
0
−50
−25
0
25
50
75
100
CFB (F)
Temperature (_C)
Figure 28.
Figure 29.
TPS73201
LOAD TRANSIENT, ADJUSTABLE VERSION
TPS73201
LINE TRANSIENT, ADJUSTABLE VERSION
CFB = 10nF
R1 = 39.2kΩ
COUT = 0µF
100mV/div
COUT = 0µF
VOUT
100mV/div
VOUT
100mV/div
C OUT = 10µF
100mV/div
COUT = 10µF
125
VOUT = 2.5V
CFB = 10nF
VOUT
VOUT
4.5V
250mA
3.5V
VIN
10mA
IOUT
5µs/div
10µs/div
Figure 30.
Figure 31.
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11
TPS73201-EP,, TPS73215-EP
TPS73216-EP, TPS73218-EP, TPS73225-EP
TPS73230-EP, TPS73233-EP, TPS73250-EP
www.ti.com
SGLS346 – JUNE 2006
APPLICATION INFORMATION
The TPS732xx belongs to a family of new generation
LDO regulators that use an NMOS pass transistor to
achieve ultra-low-dropout performance, reverse
current blockage, and freedom from output capacitor
constraints. These features, combined with low noise
and an enable input, make the TPS732xx ideal for
portable applications. This regulator family offers a
wide selection of fixed output voltage versions and
an adjustable output version. All versions have
thermal and over-current protection, including
foldback current limit.
Figure 32 shows the basic circuit connections for the
fixed voltage models. Figure 33 gives the
connections for the adjustable output version
(TPS73201).
Optional input capacitor.
May improve source
impedance, noise, or PSRR.
VIN
Optional output capacitor.
May improve load transient,
noise, or PSRR.
IN
VOUT
OUT
TPS732xx
EN
GND
NR
Figure 32. Typical Application Circuit for
Fixed-Voltage Versions
VIN
Optional output capacitor.
May improve load transient,
noise, or PSRR.
IN
EN
VOUT
OUT
TPS732xx
GND
R1
CFB
FB
R2
VOUT =
(R1 + R2)
R1
× 1.204
Although an input capacitor is not required for
stability, it is good analog design practice to connect
a 0.1 µF to 1 µF low ESR capacitor across the input
supply near the regulator. This counteracts reactive
input sources and improves transient response,
noise rejection, and ripple rejection. A higher-value
capacitor may be necessary if large, fast rise-time
load transients are anticipated or the device is
located several inches from the power source.
The TPS732xx does not require an output capacitor
for stability and has maximum phase margin with no
capacitor. It is designed to be stable for all available
types and values of capacitors. In applications where
VIN – VOUT < 0.5 V and multiple low ESR capacitors
are in parallel, ringing may occur when the product of
COUT and total ESR drops below 50 nΩF. Total ESR
includes all parasitic resistances, including capacitor
ESR and board, socket, and solder joint resistance.
In most applications, the sum of capacitor ESR and
trace resistance will meet this requirement.
OUTPUT NOISE
Optional bypass
capacitor to reduce
output noise.
Optional input capacitor.
May improve source
impedance, noise, or PSRR.
INPUT AND OUTPUT CAPACITOR
REQUIREMENTS
Optional capacitor
reduces output noise
and improves
transient response.
Figure 33. Typical Application Circuit for
Adjustable-Voltage Versions
R1 and R2 can be calculated for any output voltage
using the formula shown in Figure 33. Sample
resistor values for common output voltages are
shown in Figure 3. For the best accuracy, make the
parallel combination of R1 and R2 approximately 19
kΩ.
A precision band-gap reference is used to generate
the internal reference voltage, VREF. This reference is
the dominant noise source within the TPS732xx and
it generates approximately 32 µVRMS (10 Hz to
100 kHz) at the reference output (NR). The regulator
control loop gains up the reference noise with the
same gain as the reference voltage, so that the noise
voltage of the regulator is approximately given by:
VOUT
(R1 ) R2)
V N + 32mVRMS
+ 32mVRMS
R2
VREF
(1)
Since the value of VREF is 1.2V, this relationship
reduces to:
mV RMS
V N(mVRMS) + 27
V OUT(V)
V
(2)
ǒ
for the case of no CNR.
An internal 27 kΩ resistor in series with the noise
reduction pin (NR) forms a low-pass filter for the
voltage reference when an external noise reduction
capacitor, CNR, is connected from NR to ground. For
CNR = 10 nF, the total noise in the 10 Hz to 100 kHz
bandwidth is reduced by a factor of ~3.2, giving the
approximate relationship:
ǒmVV Ǔ
V N(mVRMS) + 8.5
for CNR = 10nF.
12
Ǔ
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RMS
V OUT(V)
(3)
TPS73201-EP,, TPS73215-EP
TPS73216-EP, TPS73218-EP, TPS73225-EP
TPS73230-EP, TPS73233-EP, TPS73250-EP
www.ti.com
SGLS346 – JUNE 2006
This noise reduction effect is shown as RMS Noise
Voltage vs CNR in the Typical Characteristics section.
The TPS73201 adjustable version does not have the
noise-reduction pin available. However, connecting a
feedback capacitor, CFB, from the output to the FB
pin reduces output noise and improve load transient
performance.
The TPS732xx uses an internal charge pump to
develop an internal supply voltage sufficient to drive
the gate of the NMOS pass element above VOUT.
The charge pump generates ~250 µV of switching
noise at ~2 MHz; however, charge-pump noise
contribution is negligible at the output of the regulator
for most values of IOUT and COUT.
BOARD LAYOUT RECOMMENDATION TO
IMPROVE PSRR AND NOISE
PERFORMANCE
To improve ac performance such as PSRR, output
noise, and transient response, it is recommended
that the PCB be designed with separate ground
planes for VIN and VOUT, with each ground plane
connected only at the GND pin of the device. In
addition, the ground connection for the bypass
capacitor should connect directly to the GND pin of
the device.
INTERNAL CURRENT LIMIT
The TPS732xx internal current limit helps protect the
regulator during fault conditions. Foldback helps to
protect the regulator from damage during output
short-circuit conditions by reducing current limit when
VOUT drops below 0.5 V. See Figure 12 in the Typical
Characteristics section for a graph of IOUT vs VOUT.
SHUTDOWN
The Enable pin is active high and is compatible with
standard TTL-CMOS levels. VEN below 0.5 V (max)
turns the regulator off and drops the ground pin
current to approximately 10 nA. When shutdown
capability is not required, the Enable pin can be
connected to VIN. When a pullup resistor is used,
and operation down to 1.8 V is required, use pullup
resistor values below 50 kΩ.
For large step changes in load current, the
TPS732xx requires a larger voltage drop from VIN to
VOUT to avoid degraded transient response. The
boundary of this transient dropout region is
approximately twice the dc dropout. Values of VIN
– VOUT above this line insure normal transient
response.
Operating in the transient dropout region can cause
an increase in recovery time. The time required to
recover from a load transient is a function of the
magnitude of the change in load current rate, the
rate of change in load current, and the available
headroom (VIN to VOUT voltage drop). Under
worst-case conditions [full-scale instantaneous load
change with (VIN – VOUT) close to dc dropout levels],
the TPS732xx can take a couple of hundred
microseconds to return to the specified regulation
accuracy.
TRANSIENT RESPONSE
The low open-loop output impedance provided by the
NMOS pass element in a voltage follower
configuration allows operation without an output
capacitor for many applications. As with any
regulator, the addition of a capacitor (nominal value
1 µF) from the output pin to ground reduces
undershoot magnitude but increase duration. In the
adjustable version, the addition of a capacitor, CFB,
from the output to the adjust pin also improves the
transient response.
The TPS732xx does not have active pulldown when
the output is overvoltage. This allows applications
that connect higher voltage sources, such as
alternate power supplies, to the output. This also
results in an output overshoot of several percent if
the load current quickly drops to zero when a
capacitor is connected to the output. The duration of
overshoot can be reduced by adding a load resistor.
The overshoot decays at a rate determined by output
capacitor COUT and the internal/external load
resistance. The rate of decay is given by:
(Fixed voltage version)
VOUT
dVńdt +
C OUT 80kW ø R LOAD
(4)
DROPOUT VOLTAGE
The TPS732xx uses an NMOS pass transistor to
achieve extremely low dropout. When (VIN – VOUT) is
less than the dropout voltage (VDO), the NMOS pass
device is in its linear region of operation and the
input-to-output resistance is the RDS-ON of the NMOS
pass element.
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13
TPS73201-EP,, TPS73215-EP
TPS73216-EP, TPS73218-EP, TPS73225-EP
TPS73230-EP, TPS73233-EP, TPS73250-EP
www.ti.com
SGLS346 – JUNE 2006
(Adjustable voltage version)
V OUT
dVńdt +
C OUT 80kW ø (R 1 ) R 2) ø R LOAD
(5)
REVERSE CURRENT
The NMOS pass element of the TPS732xx provides
inherent protection against current flow from the
output of the regulator to the input when the gate of
the pass device is pulled low. To ensure that all
charge is removed from the gate of the pass
element, the enable pin must be driven low before
the input voltage is removed. If this is not done, the
pass element may be left on due to stored charge on
the gate.
After the enable pin is driven low, no bias voltage is
needed on any pin for reverse current blocking. Note
that reverse current is specified as the current
flowing out of the IN pin due to voltage applied on
the OUT pin. There will be additional current flowing
into the OUT pin due to the 80-kΩ internal resistor
divider to ground (see Figure 2 and Figure 3).
For the TPS73201, reverse current may flow when
VFB is more than 1 V above VIN.
THERMAL PROTECTION
Thermal protection disables the output when the
junction temperature rises to approximately 160°C,
allowing the device to cool. When the junction
temperature cools to approximately 140°C, the
output circuitry is again enabled. Depending on
power dissipation, thermal resistance, and ambient
temperature, the thermal protection circuit may cycle
on and off. This limits the dissipation of the regulator,
protecting it from damage due to overheating.
Any tendency to activate the thermal protection
circuit indicates excessive power dissipation or an
inadequate heatsink. For reliable operation, junction
temperature should be limited to 125°C maximum.
To estimate the margin of safety in a complete
design (including heatsink), increase the ambient
temperature until the thermal protection is triggered;
use worst-case loads and signal conditions. For good
reliability, thermal protection should trigger at least
14
35°C above the maximum expected ambient
condition of your application. This produces a
worst-case junction temperature of 125°C at the
highest expected ambient temperature and
worst-case load.
The internal protection circuitry of the TPS732xx has
been designed to protect against overload
conditions. It was not intended to replace proper
heatsinking. Continuously running the TPS732xx into
thermal shutdown will degrade device reliability.
POWER DISSIPATION
The ability to remove heat from the die is different for
each
package
type,
presenting
different
considerations in the PCB layout. The PCB area
around the device that is free of other components
moves the heat from the device to the ambient air.
Performance data for JEDEC low-K and high-K
boards are shown in the Power Dissipation Ratings
table. Using heavier copper increases the
effectiveness in removing heat from the device. The
addition of plated through-holes to heat-dissipating
layers also improves the heat-sink effectiveness.
Power dissipation depends on input voltage and load
conditions. Power dissipation is equal to the product
of the output current times the voltage drop across
the output pass element (VIN to VOUT):
P D + (VIN * VOUT) I OUT
(6)
Power dissipation can be minimized by using the
lowest possible input voltage necessary to assure
the required output voltage.
Package Mounting
Solder pad footprint recommendations for the
TPS732xx are presented in Application Bulletin
Solder Pad Recommendations for Surface-Mount
Devices (AB-132), available from the Texas
Instruments web site at www.ti.com.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS73201MDBVREP
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
PKJM
TPS73215MDBVREP
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
PKKM
TPS73216MDBVREP
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
PKLM
TPS73218MDBVREP
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
PKMM
TPS73225MDBVREP
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
PKNM
TPS73230MDBVREP
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
PKOM
TPS73233MDBVREP
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
PKPM
TPS73250MDBVREP
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
PKQM
V62/06644-01XE
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
PKJM
V62/06644-02XE
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
PKKM
V62/06644-03XE
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
PKLM
V62/06644-04XE
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
PKMM
V62/06644-05XE
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
PKNM
V62/06644-06XE
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
PKOM
V62/06644-07XE
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
PKPM
V62/06644-08XE
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
PKQM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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