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TPS74201
SBVS064N – DECEMBER 2005 – REVISED NOVEMBER 2016
TPS742
1.5-A Ultra-LDO With Programmable Soft-Start
1 Features
3 Description
•
•
The TPS742 series of low-dropout (LDO) linear
regulators provide an easy-to-use, robust powermanagement solution for a wide variety of
applications. User-programmable soft-start minimizes
stress on the input power source by reducing
capacitive inrush current on start-up. The soft-start is
monotonic and well suited for powering many
different types of processors and ASICs. The enable
input and power-good output allow easy sequencing
with external regulators. This complete flexibility
permits the user to configure a solution that meets
the sequencing requirements of FPGAs, DSPs, and
other applications with special start-up requirements.
Input Voltage Range: 0.8 V to 5.5 V
Soft-Start (SS) Pin Provides a Linear Start-Up
With Ramp Time Set by External Capacitor
1% Accuracy Over Line, Load, and Temperature
Supports Input Voltages as Low as 0.8 V With
External Bias Supply
Adjustable Output (0.8 V to 3.6 V)
Ultra-Low Dropout: 55 mV at 1.5 A (Typical)
Stable With Any or No Output Capacitor
Excellent Transient Response
Open-Drain Power-Good (VQFN)
Active High Enable
1
•
•
•
•
•
•
•
•
2 Applications
•
•
•
•
•
FPGA Applications
DSP Core and I/O Voltages
Servers
Post-Regulation Applications
Applications With Special Start-Up Time or
Sequencing Requirements
A precision reference and error amplifier deliver 1%
accuracy over load, line, temperature, and process.
Each LDO is stable with low-cost ceramic output
capacitors, and the family is fully specified from
–40°C to 125°C. The TPS742 devices are offered in
a small 5-mm × 5-mm VQFN (RGW) and a small
3.5-mm × 3.5-mm VQFN (RGR) package, yielding a
highly compact total solution size. For applications
that require additional power dissipation, the
DDPAK/TO-263 (KTW) package is also available.
Device Information(1)
PART
NUMBER
PACKAGE
TPS74201
BODY SIZE (NOM)
VQFN (20), RGW
5.00 mm × 5.00 mm
VQFN (20), RGR
3.50 mm × 3.50 mm
DDPAK/TO-263 (7)
8.89 mm × 10.10 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application Adjustable Output Version
VIN
IN
CIN
1µF
PG
R3
BIAS
EN
VBIAS
TPS74201
R1
GND
CSS
VOUT
OUT
SS
CBIAS
1µF
Turnon Response
FB
CSS = 0mF
COUT
R2
CSS = 0.001mF
VOUT
CSS = 0.0047mF
1V/div
Optional
1.2V
1V/div
VEN
0V
Time (1ms/div)
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS74201
SBVS064N – DECEMBER 2005 – REVISED NOVEMBER 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
4
5
6.1
6.2
6.3
6.4
6.5
6.6
5
5
5
6
7
8
Detailed Description ............................................ 12
7.1
7.2
7.3
7.4
8
Absolute Maximum Ratings .....................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
12
12
13
13
Application and Implementation ........................ 15
8.1 Application Information............................................ 15
8.2 Typical Applications ................................................ 19
9 Power Supply Recommendations...................... 20
10 Layout................................................................... 21
10.1
10.2
10.3
10.4
Layout Guidelines .................................................
Layout Example ....................................................
Thermal Protection................................................
Thermal Considerations ........................................
21
21
22
22
11 Device and Documentation Support ................. 25
11.1
11.2
11.3
11.4
11.5
11.6
11.7
Device Support......................................................
Documentation Support .......................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
25
25
25
25
25
25
25
12 Mechanical, Packaging, and Orderable
Information ........................................................... 26
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision M (October 2015) to Revision N
Page
•
Added RGR package to document ........................................................................................................................................ 1
•
Deleted Packages Features bullet ......................................................................................................................................... 1
•
Changed Power-Good Features bullet ................................................................................................................................... 1
•
Added RGR package to last paragraph of Description section ............................................................................................. 1
•
Added RGR row to Device Information table ........................................................................................................................ 1
•
Added RGR package to Pin Configuration and Functions section ........................................................................................ 4
•
Changed pinout view of KTW package to Top View .............................................................................................................. 4
•
Added RGR package to Thermal Information table .............................................................................................................. 6
•
Changed Figure 32 title to reflect both VQFN packages instead of just one ....................................................................... 21
Changes from Revision L (November 2010) to Revision M
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
•
Updated the value in Normal and Dropout modes under VBIAS column ............................................................................... 14
Changes from Revision K (August, 2010) to Revision L
Page
•
Replaced the Dissipation Ratings table with the Thermal Information table .......................................................................... 6
•
Corrected equation for Table 2............................................................................................................................................. 17
•
Revised Layout Recommendations and Power Dissipation section .................................................................................... 21
2
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SBVS064N – DECEMBER 2005 – REVISED NOVEMBER 2016
Changes from Revision J (December, 2009) to Revision K
Page
•
Revised Layout Guidelines section ...................................................................................................................................... 21
•
Changed final paragraph of Layout Guidelines section........................................................................................................ 21
•
Revised Estimating Junction Temperature section .............................................................................................................. 22
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TPS74201
SBVS064N – DECEMBER 2005 – REVISED NOVEMBER 2016
www.ti.com
5 Pin Configuration and Functions
IN
NC
NC
NC
OUT
5
4
3
2
1
RGW, RGR Packages
20-Pin VQFN with Exposed Thermal Pad
Top View
IN
6
20
OUT
IN
7
19
OUT
IN
8
18
OUT
PG
9
17
NC
BIAS
10
16
FB/SNS
11
12
13
14
15
EN
GND
NC
NC
SS
TPS742xx
GND
KTW Package
7-Pin DDPAK/TO-263
Top View
1 2 3 4 5 6 7
SS OUT IN EN
FB/ GND BIAS
SNS
Pin Functions
PIN
KTW
(DDPAK/
TO-263)
RGW, RGR
(VQFN)
I/O
BIAS
6
10
I
Bias input voltage for error amplifier, reference, and internal control circuits.
EN
7
11
I
Enable pin. Driving this pin high enables the regulator. Driving this pin low puts
the regulator into shutdown mode. This pin must not be left floating.
FB
2
16
I
This pin is the feedback connection to the center tap of an external resistor
divider network that sets the output voltage. This pin must not be left floating.
(Adjustable version only.)
GND
4
12
—
IN
5
5,6,7,8
I
Unregulated input to the device.
NC
—
2, 3,4,
13,14,17
O
No connection. This pin can be left floating or connected to GND to allow better
thermal contact to the top-side plane.
OUT
3
1, 18, 19, 20
O
Regulated output voltage. No capacitor is required on this pin for stability.
PAD/TAB
—
—
—
Solder to the ground plane for increased thermal performance.
NAME
DESCRIPTION
Ground
PG
—
9
O
Power-Good (PG) is an open-drain, active-high output that indicates the status
of VOUT. When VOUT exceeds the PG trip threshold, the PG pin goes into a
high-impedance state. When VOUT is below this threshold the pin is driven to a
low-impedance state. Connect a pullup resistor from 10 kΩ to 1 MΩ from this
pin to a supply up to 5.5 V. The supply can be higher than the input voltage.
Alternatively, the PG pin can be left floating if output monitoring is not
necessary.
SNS
2
16
I
This pin is the sense connection to the load device. This pin must be
connected to VOUT and must not be left floating. (Fixed versions only.)
SS
1
15
—
4
Soft-Start pin. A capacitor connected on this pin to ground sets the start-up
time. If this pin is left floating, the regulator output soft-start ramp time is
typically 100 μs.
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SBVS064N – DECEMBER 2005 – REVISED NOVEMBER 2016
6 Specifications
6.1 Absolute Maximum Ratings
at TJ = –40°C to 125°C (unless otherwise noted); all voltages are with respect to GND (1)
MIN
MAX
UNIT
VIN, VBIAS
Input voltage
–0.3
6
V
VEN
Enable voltage
–0.3
6
V
VPG
Power-good voltage
–0.3
6
V
IPG
PG sink current
0
1.5
mA
VSS
SS pin voltage
–0.3
6
V
VFB
Feedback pin voltage
–0.3
6
V
VOUT
Output voltage
–0.3
VIN + 0.3
V
IOUT
Maximum output current
Internally limited
Output short circuit duration
Indefinite
PDISS
Continuous total power dissipation
TJ
Operating junction temperature
–40
125
°C
Tstg
Storage junction temperature
–55
150
°C
(1)
See Thermal Information
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
Charged device model (CDM), per JEDEC specification JESD22-C101 (2)
UNIT
±2000
V
±500
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VIN
Input supply voltage
VEN
Enable supply voltage
VBIAS (1)
BIAS supply voltage
IOUT
NOM
MAX
UNIT
VOUT + VDO
5.5
V
0
5.5
V
VOUT + VDO (VBIAS)
5.5
V
Output current
0
1.5
A
COUT
Output capacitor
0
µF
CIN (2)
Input capacitor
1
µF
CBIAS
Bias capacitor
1
µF
TJ
Operating junction temperature
(1)
(2)
–40
125
°C
BIAS supply is required when VIN is below VOUT + VDO (VBIAS).
If VIN and VBIAS are connected to the same supply, the recommended minimum capacitor for the supply is 4.7 µF.
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SBVS064N – DECEMBER 2005 – REVISED NOVEMBER 2016
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6.4 Thermal Information
TPS742
THERMAL METRIC
(1) (2) (3)
RGW (VQFN)
RGR (VQFN)
KTW (DDPAK/TO263)
20 PINS
20 PINS
7 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
35.4
39.1
26.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
32.4
29.3
41.7
°C/W
RθJB
Junction-to-board thermal resistance
14.7
10.2
12.5
°C/W
ψJT
Junction-to-top characterization parameter
0.4
0.4
4
°C/W
ψJB
Junction-to-board characterization parameter
14.8
10.1
7.3
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
3.9
2.0
0.3
°C/W
(1)
(2)
(3)
6
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report (SPRA953).
For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator.
Thermal data for the RGW, RGR, and KTW packages are derived by thermal simulations based on JEDEC-standard methodology as
specified in the JESD51 series. The following assumptions are used in the simulations:
(a) i. RGW and RGR: The exposed pad is connected to the PCB ground layer through a 4 × 4 thermal via array.
- ii. KTW: The exposed pad is connected to the PCB ground layer through a 6 × 6 thermal via array.
(b) Each of top and bottom copper layers has a dedicated pattern for 20% copper coverage.
(c) These data were generated with only a single device at the center of a JEDEC high-K (2s2p) board with 3in × 3in copper area. To
understand the effects of the copper area on thermal performance, refer to the Thermal Considerations section.
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6.5 Electrical Characteristics
at VEN = 1.1 V, VIN = VOUT + 0.3 V, CIN = CBIAS = 0.1 μF, COUT = 10 μF, IOUT = 50 mA, VBIAS = 5 V, and TJ = –40°C to 125°C
(unless otherwise noted); typical values are at TJ = 25°C
PARAMETER
VIN
Input voltage
VBIAS
VREF
VOUT/VIN
VOUT/IOUT
VDO
MIN
TYP
MAX
UNIT
VOUT + VDO
5.5
V
Bias pin voltage
2.375
5.25
V
Internal reference (adjustable) TJ = 25°C
0.796
0.804
V
3.6
V
Output voltage
VOUT
TEST CONDITIONS
Accuracy
(1)
Line regulation
Load regulation
VIN = 5 V, IOUT = 1.5 A, VBIAS = 5 V
VREF
2.375 V ≤ VBIAS ≤ 5.25 V, VOUT + 1.62 V ≤ VBIAS
50 mA ≤ IOUT ≤ 1.5 A
–1%
0.8
±0.2%
1%
VOUT
(NOM)
+ 0.3 ≤ VIN ≤ 5.5 V, VQFN
0.0005
0.05
VOUT
(NOM)
+ 0.3 ≤ VIN ≤ 5.5 V, DDPAK/TO-263
0.0005
0.06
0 mA ≤ IOUT ≤ 50 mA
0.013
50 mA ≤ IOUT ≤ 1.5 A
0.04
%/mA
%/A
IOUT = 1.5 A, VBIAS – VOUT (NOM) ≥ 1.62 V, VQFN
55
100
VIN dropout voltage (2)
IOUT = 1.5 A, VBIAS – VOUT (NOM) ≥ 1.62 V,
DDPAK/TO-263
60
120
VBIAS dropout voltage (2)
IOUT = 1.5 A, VIN = VBIAS
ICL
Current limit
VOUT = 80% × VOUT (NOM)
IBIAS
Bias pin current
IOUT = 0 mA to 1.5 A
ISHDN
Shutdown supply current (VIN) VEN ≤ 0.4 V
IFB, ISNS
Feedback, Sense pin
current (3)
IOUT = 50 mA to 1.5 A
1.4
1.8
–250
%/V
mV
V
4
A
2
4
mA
1
100
μA
68
250
nA
Power-supply rejection
(VIN to VOUT)
1 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V
73
300 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V
42
Power-supply rejection
(VBIAS to VOUT)
1 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V
62
300 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V
50
Noise
Output noise voltage
100 Hz to 100 kHz, IOUT = 1.5 A, CSS = 0.001 μF
16 × VOUT
μVRMS
VTRAN
%VOUT droop during load
transient
IOUT = 50 mA to 1.5 A at 1 A/μs, COUT = none
3.5
%VOUT
tSTR
Minimum start-up time
IOUT = 1.5 A, CSS = open
ISS
Soft-start charging current
VSS = 0.4 V
PSRR
VEN,
HI
Enable input high level
VEN,
LO
Enable input low level
VEN,
HYS
Enable pin hysteresis
VEN,
DG
Enable pin deglitch time
VIT
PG trip threshold
VOUT decreasing
VHYS
PG trip hysteresis
VPG, LO
PG output low voltage
IPG = 1 mA (sinking), VOUT < VIT
IPG,
PG leakage current
VPG = 5.25 V, VOUT > VIT
TSD
Thermal shutdown
temperature
(1)
(2)
(3)
μs
1
μA
1.1
5.5
V
0
0.4
86.5
μs
0.1
1
90
93.5
3
0.03
–40
Shutdown, temperature increasing
155
Reset, temperature decreasing
140
V
mV
20
VEN = 5 V
Operating junction
temperature
0.73
50
Enable pin current
LKG
dB
100
0.5
IEN
TJ
dB
μA
%VOUT
%VOUT
0.3
V
1
μA
125
°C
°C
Adjustable devices tested at 0.8V; resistor tolerance is not taken into account.
Dropout is defined as the voltage from the input to VOUT when VOUT is 2% below nominal.
IFB, ISNS current flow is out of the device.
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6.6 Typical Characteristics
at TJ = 25°C, VOUT = 1.5 V, VIN = VOUT(TYP) + 0.3 V, VBIAS = 3.3 V, IOUT = 50 mA, EN = VIN, CIN = 1 μF, CBIAS = 4.7 μF, CSS =
0.01 μF, and COUT = 10 μF (unless otherwise noted)
1.0
0.050
Referred to IOUT = 50mA
0.9
Referred to IOUT = 50mA
0.025
0.7
0.6
-40°C
0.5
0.4
+25°C
0.3
0.2
0.1
0
Change in VOUT (%)
Change in VOUT (%)
0.8
-0.050
-40°C
-0.075
+125°C
-0.100
+125°C
0
+25°C
-0.025
-0.125
-0.150
-0.1
0
10
20
30
40
50
50
500
IOUT (mA)
1000
1500
IOUT (mA)
Figure 1. Load Regulation
Figure 2. Load Regulation
0.05
100
0.04
0.02
Dropout Voltage (mV)
Change in VOUT (%)
0.03
TJ = -40°C
0.01
0
-0.01
TJ = +25°C
TJ = +125°C
-0.02
75
+125°C
50
+25°C
25
-40°C
-0.03
-0.04
0
-0.05
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
0.5
VIN - VOUT (V)
Figure 3. Line Regulation
200
60
IOUT = 500mA
50
Dropout Voltage (mV)
Dropout Voltage (mV)
160
140
120
+125°C
100
+25°C
80
60
40
40
+125°C
30
+25°C
20
10
-40°C
20
-40°C
0
0
0.9
8
1.5
Figure 4. VIN Dropout Voltage vs
IOUT and Temperature (TJ)
IOUT = 1.5A
180
1.0
IOUT (A)
1.4
1.9
2.4
2.9
3.4
3.9
0.9
1.4
1.9
2.4
2.9
3.4
VBIAS - VOUT (V)
VBIAS - VOUT (V)
Figure 5. VIN Dropout Voltage vs
VBIAS – VOUT and Temperature (TJ)
Figure 6. VIN Dropout Voltage vs
VBIAS – VOUT and Temperature (TJ)
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Typical Characteristics (continued)
at TJ = 25°C, VOUT = 1.5 V, VIN = VOUT(TYP) + 0.3 V, VBIAS = 3.3 V, IOUT = 50 mA, EN = VIN, CIN = 1 μF, CBIAS = 4.7 μF, CSS =
0.01 μF, and COUT = 10 μF (unless otherwise noted)
1400
Power-Supply Rejection Ratio (dB)
80
Dropout Voltage (mV)
1300
1200
+25°C
+125°C
1100
1000
-40°C
900
800
700
600
70
60
50
40
30
20
VIN = 1.8, VOUT = 1.5V
VBIAS = 3.3V, IOUT = 1.5A
10
0
500
0
0.5
1.0
1.5
10
100
1k
IOUT (A)
Figure 7. VBIAS Dropout Voltage vs
IOUT and Temperature
100
COUT = 100mF
90
COUT = 10mF
70
60
50
40
30
20
COUT = 0mF
10
VIN = 1.8, VOUT = 1.5V, IOUT = 100mA
0
10
100
1k
10k
70
COUT = 100mF
60
COUT = 10mF
50
40
30
20
10
COUT = 0mF
100k
1M
10
10M
100
1k
700kHz
60
50
300kHz
100k
1M
10M
100kHz
20
10
IOUT = 1.5A
0
0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
Figure 10. VIN PSRR vs Frequency
Output Spectral Noise Density (mV/ÖHz)
Power-Supply Rejection Ratio (dB)
1kHz
80
40
10k
Frequency (Hz)
Figure 9. VIN PSRR vs Frequency
0
10M
80
0
90
30
1M
VIN = 1.8, VOUT = 1.5V, IOUT = 1.5A
90
Frequency (Hz)
70
100k
Figure 8. VBIAS PSRR vs Frequency
Power-Supply Rejection Ratio (dB)
Power-Supply Rejection Ratio (dB)
100
80
10k
Frequency (Hz)
1
IOUT = 100mA
VOUT = 1.1V
CSS = 1nF
CSS = 0nF
0.1
CSS = 10nF
0.01
100
VIN - VOUT (V)
1k
10k
100k
Frequency (Hz)
Figure 11. VIN PSRR vs VIN – VOUT
Figure 12. Noise Spectral Density
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Typical Characteristics (continued)
at TJ = 25°C, VOUT = 1.5 V, VIN = VOUT(TYP) + 0.3 V, VBIAS = 3.3 V, IOUT = 50 mA, EN = VIN, CIN = 1 μF, CBIAS = 4.7 μF, CSS =
0.01 μF, and COUT = 10 μF (unless otherwise noted)
2.85
3.0
2.8
+125°C
2.45
2.25
2.05
+25°C
1.85
1.65
+125°C
2.6
Bias Current (mA)
Bias Current (mA)
2.65
2.4
2.2
+25°C
2.0
1.8
1.6
-40°C
-40°C
1.4
1.45
1.2
1.25
1.0
0
0.5
1.0
2.0
1.5
2.5
3.0
3.5
IOUT (A)
4.0
4.5
5.0
VBIAS (V)
Figure 13. IBIAS vs IOUT and Temperature
Figure 14. IBIAS vs VBIAS and VOUT
0.45
765
0.40
VBIAS = 2.375V
750
735
0.30
VBIAS = 5.5V
0.25
ISS (nA)
Bias Current (mA)
0.35
0.20
720
705
0.15
0.10
690
0.05
675
0
-40
0
-20
20
40
60
80
100
120
-40
-20
0
Junction Temperature (°C)
Figure 15. IBIAS Shutdown vs Temperature
40
60
80
100
120
Figure 16. Soft-Start Charging Current (ISS) vs Temperature
1.0
VOL Low-Level PG Voltage (V)
20
Junction Temperature (°C)
COUT = 1000mF
0.9
10mV/div
0.8
10mV/div
0.7
COUT = 100mF
COUT = 10mF
10mV/div
0.6
0.5
COUT = 0mF
0.4
10mV/div
0.3
0.2
1V/div
0.1
1V/ms
0
0
2
4
6
8
10
12
Time (50ms/div)
PG Current (mA)
Figure 17. Low-Level PG Voltage vs PG Current
10
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Figure 18. VBIAS Line Transient (1.5 A)
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Typical Characteristics (continued)
at TJ = 25°C, VOUT = 1.5 V, VIN = VOUT(TYP) + 0.3 V, VBIAS = 3.3 V, IOUT = 50 mA, EN = VIN, CIN = 1 μF, CBIAS = 4.7 μF, CSS =
0.01 μF, and COUT = 10 μF (unless otherwise noted)
10mV/div
COUT = 2 x 470mF (OSCON)
COUT = 2 x 470mF (OSCON)
50mV/div
COUT = 100mF (Cer.)
COUT = 100mF (Cer.)
10mV/div
50mV/div
COUT = 10mF (Cer.)
10mV/div
50mV/div
COUT = 0mF
COUT = 10mF (Cer.)
50mV/div
10mV/div
COUT = 0mF
1.5A
1V/ms
500mV/div
1A/div
1A/ms
50mA
Time (50ms/div)
Time (50ms/div)
Figure 19. VIN Line Transient
Figure 20. Output Load Transient Response
CSS = 0mF
VOUT
CSS = 0.001mF
VIN = VBIAS = VEN
CSS = 0.0047mF
1V/div
1V/div
1.2V
1V/div
VPG (500mV/div)
VEN
VOUT
0V
Time (1ms/div)
Time (20ms/div)
Figure 21. Turnon Response
IOUT
500mA/div
Figure 22. Power Up and Power Down
VOUT
50mV/div
Output Shorted
Output Open
Time (20ms/div)
Figure 23. Output Short Circuit Recovery
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7 Detailed Description
7.1 Overview
The TPS742 belongs to a family of generation ultra-low dropout regulators that feature soft-start and tracking
capabilities. These regulators use a low current bias input to power all internal control circuitry, allowing the
NMOS pass transistor to regulate very low input and output voltages.
The use of an NMOS-pass FET offers several critical advantages for many applications. Unlike a PMOS topology
device, the output capacitor has little effect on loop stability. This architecture allows the TPS742 devices to be
stable with any or even no output capacitor. Transient response is also superior to PMOS topologies, particularly
for low VIN applications.
The TPS742 devices feature a programmable voltage-controlled soft-start circuit that provides a smooth,
monotonic start-up and limits start-up inrush currents that may be caused by large capacitive loads. A powergood (PG) output is available to allow supply monitoring and sequencing of other supplies. An enable (EN) pin
with hysteresis and deglitch allows slow-ramping signals to be used for sequencing the device. The low VIN and
VOUT capability allows for inexpensive, easy-to-design, and efficient linear regulation between the multiple supply
voltages often present in processor intensive systems.
7.2 Functional Block Diagram
IN
Current
Limit
BIAS
UVLO
OUT
Thermal
Limit
0.73mA
VOUT
R1
SS
CSS
Soft-Start
Discharge
VOUT = 0.8 x (1 +
0.8V
Reference
R1
)
R2
FB
PG
EN
Hysteresis
and De-Glitch
R2
0.9 ´ VREF
GND
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7.3 Feature Description
7.3.1 Enable and Shutdown
The enable (EN) pin is active high and is compatible with standard digital signaling levels. VEN less than 0.4 V
turns the regulator off and VEN greater than 1.1 V turns the regulator on. Unlike many regulators, the enable
circuitry has hysteresis and deglitching for use with relatively slow-ramping analog signals. This configuration
allows the TPS742 devices to be enabled by connecting the output of another supply to the EN pin. The enable
circuitry typically has 50 mV of hysteresis and a deglitch circuit to help avoid ON and OFF cycling because of
small glitches in the VEN signal.
The enable threshold is typically 0.8 V and varies with temperature and process variations. Temperature
variation is approximately –1 mV/°C; therefore, process variation accounts for most of the variation in the enable
threshold. If precise turnon timing is required, then use a fast rise-time signal to enable the TPS742 devices.
If not used, EN can be connected to either IN or BIAS. If EN is connected to IN, then connect EN as closely as
possible to the largest capacitance on the input to prevent voltage droops on that line from triggering the enable
circuit.
7.3.2 Power-Good (VQFN Packages Only)
The power-good (PG) pin is an open-drain output and can be connected to any 5.5 V or lower rail through an
external pullup resistor. This pin requires at least 1.1 V on VBIAS to have a valid output. The PG output is highimpedance when VOUT is greater than VIT + VHYS. If VOUT drops below VIT or if VBIAS drops less than 1.9 V, the
open-drain output turns on and pulls the PG output low. The PG pin also asserts when the device is disabled.
The recommended operating condition of PG pin sink current is up to 1 mA, so the pullup resistor for PG must be
in the range of 10 kΩ to 1 MΩ. PG is only provided on the VQFN packages. If output voltage monitoring is not
needed, then the PG pin can be left floating.
7.3.3 Internal Current Limit
The TPS742 family features a factory-trimmed, accurate current limit that is flat over temperature and supply
voltage. The current limit allows the device to supply surges of up to 1.8 A and maintain regulation. The current
limit responds in about 10 μs to reduce the current during a short circuit fault. Recovery from a short circuit
condition is well-controlled and results in very little output overshoot when the load is removed. See Figure 23 in
the Typical Characteristics section for a graph of IOUT versus VOUT performance.
The internal current limit protection circuitry of the TPS742 family of devices is designed to protect against
overload conditions. The circuitry is not intended to allow operation above the rated current of the device.
Continuously running the TPS742 devices above the rated current degrades device reliability.
7.4 Device Functional Modes
7.4.1 Normal Operation
The device regulates to the nominal output voltage under the following conditions:
•
•
•
•
•
The input voltage and bias voltage are both at least at the respective minimum specifications.
The enable voltage has previously exceeded the enable rising threshold voltage and has not decreased
below the enable falling threshold.
The output current is less than the current limit.
The device junction temperature is less than the maximum specified junction temperature.
The device is not operating in dropout.
7.4.2 Dropout Operation
If the input voltage is lower than the nominal output voltage plus the specified dropout voltage, but all other
conditions are met for normal operation, the device operates in dropout mode. In this condition, the output
voltage is the same as the input voltage minus the dropout voltage. The transient performance of the device is
significantly degraded because the pass device is in a triode state and no longer controls the current through the
LDO. Line or load transients in dropout can result in large output voltage deviations.
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Device Functional Modes (continued)
7.4.3 Disabled
The device is disabled under the following conditions:
• The input or bias voltages are below the respective minimum specifications.
• The enable voltage is less than the enable falling threshold voltage or has not yet exceeded the enable rising
threshold.
• The device junction temperature is greater than the thermal shutdown temperature.
Table 1 shows the conditions that lead to the different modes of operation.
Table 1. Device Functional Mode Comparison
PARAMETER
OPERATING MODE
VIN
VEN
VBIAS
IOUT
TJ
Normal mode
VIN > VOUT(nom) + VDO (VIN)
VEN > VEN(high)
VBIAS ≥ VOUT + 1.4 V
I OUT < ICL
T J < 125°C
Dropout mode
VIN < VOUT(nom) + VDO (VIN)
VEN > VEN(high)
VBIAS < VOUT + 1.4 V
—
TJ < 125°C
VIN < VIN(min)
VEN < VEN(low)
VBIAS < VBIAS(min)
—
TJ > 155°C
Disabled mode
(any true condition disables
the device)
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
8.1.1 Input, Output, and Bias Capacitor Requirements
The TPS742 family does not require any output capacitor for stability. If an output capacitor is needed, the device
is designed to be stable for all available types and values of output capacitance. The device is also stable with
multiple capacitors in parallel, which can be of any type or value.
The capacitance required on the IN and BIAS pins is strongly dependent on the input supply source impedance.
To counteract any inductance in the input, the minimum recommended capacitor for VIN and VBIAS is 1μF. If VIN
and VBIAS are connected to the same supply, the recommended minimum capacitor for VBIAS is 4.7 μF. Use good
quality, low ESR capacitors on the input; ceramic X5R and X7R capacitors are preferred. Place these capacitors
as close to the pins as possible for optimum performance.
8.1.2 Transient Response
The TPS742 family of devices were designed to have transient response within 5% for most applications without
any output capacitor. In some cases, the transient response may be limited by the transient response of the input
supply. This limitation is especially true in applications where the difference between the input and output is less
than 300 mV. In this case, adding additional input capacitance improves the transient response much more than
just adding additional output capacitance would do. With a solid input supply, adding additional output
capacitance reduces undershoot and overshoot during a transient at the expense of a slightly longer VOUT
recovery time. See Figure 20 in the Typical Characteristics section. Because the TPS742 devices are stable
without an output capacitor, many applications may allow for little or no capacitance at the LDO output. For these
applications, local bypass capacitance for the device under power may be sufficient to meet the transient
requirements of the application. This design reduces the total solution cost by avoiding the need to use
expensive high-value capacitors at the LDO output.
8.1.3 Dropout Voltage
The TPS742 family of devices offers industry-leading dropout performance, making this family well-suited for
high-current low VIN/low VOUT applications. The extremely low dropout of the TPS742 allows the device to be
used in place of a DC-DC converter and still achieve good efficiency. This efficiency allows the user to rethink
the power architecture for their applications to achieve the smallest, simplest, and lowest cost solution.
There are two different specifications for dropout voltage with the TPS742 devices. The first specification
(illustrated in Figure 24) is referred to as VIN Dropout, and is for users who wish to apply an external bias voltage
to achieve low dropout. This specification assumes that VBIAS is at least 1.62 V above VOUT, which is the case for
VBIAS when powered by a 3.3-V rail with 5% tolerance and with VOUT = 1.5 V. If VBIAS is higher than 3.3 V × 0.95
or VOUT is less than 1.5 V, VIN dropout is less than specified.
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Application Information (continued)
BIAS
IN
Reference
VBIAS = 5V ± 5%
VIN = 1.8V
VOUT = 1.5V
IOUT = 1.5A
Efficiency = 83%
OUT
VOUT
FB
Simplified Block Diagram
Figure 24. Typical Application of the TPS742 Using an Auxiliary Bias Rail
The second specification (shown in Figure 25) is referred to as VBIAS Dropout, and is for users who wish to tie IN
and BIAS together. This option allows the device to be used in applications where an auxiliary bias voltage is not
available or low dropout is not required. Dropout is limited by BIAS in these applications because VBIAS provides
the gate drive to the pass FET and therefore must be 1.4 V above VOUT. Because of this usage, IN and BIAS tied
together easily consume huge power. Pay attention not to exceed the power rating of the IC package.
VIN
BIAS
Reference
IN
VBIAS = 3.3V ± 5%
VIN = 3.3V ± 5V
VOUT = 1.5V
IOUT = 1.5A
Efficiency = 45%
OUT
VOUT
FB
Simplified Block Diagram
Figure 25. Typical Application of the TPS742 Without an Auxiliary Bias
8.1.4 Output Noise
The TPS742 devices provide low-output noise when a soft-start capacitor is used. When the device reaches the
end of the soft-start cycle, the soft-start capacitor serves as a filter for the internal reference. By using a 0.001-μF
soft-start capacitor, the output noise is reduced by half and is typically 30 μVRMS for a 1.2-V output (10 Hz to
100 kHz). Because most of the output noise is generated by the internal reference, the noise is a function of the
set output voltage. The RMS noise with a 0.001-μF soft-start capacitor is given in Equation 1.
æ mV
ö
VN (mVRMS ) = 25 ç RMS ÷ ´ VOUT (V)
è V ø
(1)
The low-output noise of the TPS742 makes the device a good choice for powering transceivers, PLLs, or other
noise-sensitive circuitry.
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Application Information (continued)
8.1.5 Programmable Soft-Start
The TPS742 devices feature a programmable, monotonic, voltage-controlled soft start that is set with an external
capacitor (CSS). This feature is important for many applications, because power-up initialization problems are
eliminated when powering FPGAs, DSPs, or other processors. The controlled voltage ramp of the output also
reduces peak inrush current during start-up, minimizing start-up transients to the input power bus.
To achieve a linear and monotonic soft-start, the TPS742 error amplifier tracks the voltage ramp of the external
soft-start capacitor until the voltage exceeds the internal reference. The soft-start ramp time depends on the softstart charging current (ISS), soft-start capacitance (CSS), and the internal reference voltage (VREF), and can be
calculated using Equation 2:
(V ´ CSS )
t SS = REF
ISS
(2)
If large output capacitors are used, the device current limit (ICL) and the output capacitor may set the start-up
time. In this case, the start-up time is given by Equation 3:
t SSCL =
(VOUT(NOM) ´ COUT )
ICL(MIN)
(3)
VOUT(NOM) is the nominal set output voltage as set by the user, COUT is the output capacitance, and ICL(MIN) is the
minimum current limit for the device. In applications where monotonic start-up is required, the soft-start time
given by Equation 2 must be set to be greater than Equation 3.
The maximum recommended soft-start capacitor is 0.015 μF. Larger soft-start capacitors can be used and do not
damage the device; however, the soft-start capacitor discharge circuit may not be able to fully discharge the softstart capacitor when enabled. Soft-start capacitors larger than 0.015 μF could be a problem in applications where
the user must rapidly pulse the enable pin and still requires the device to soft-start from ground. CSS must be
low-leakage; X7R, X5R, or C0G dielectric materials are preferred. See Table 2 for suggested soft-start capacitor
values.
Table 2. Standard Capacitor Values for Programming the Soft-Start Time
(See Equation 4)
tSS(s) =
CSS
SOFT-START TIME
Open
0.1 ms
470 pF
0.5 ms
1000 pF
1 ms
4700 pF
5 ms
0.01 μF
10 ms
0.015 μF
16 ms
VREF × CSS 0.8V × CSS(F)
=
0.73mA
ISS
where
•
tSS(s) = soft-start time in seconds
(4)
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8.1.6 Sequencing Requirements
The device can have VIN, VBIAS, and VEN sequenced in any order without causing damage to the device.
However, for the soft-start function to work as intended, certain sequencing rules must be applied. Enabling the
device after VIN and VBIAS are present is preferred, and can be accomplished using a digital output from a
processor or supply supervisor. An analog signal from an external RC circuit, as shown in Figure 26, can also be
used as long as the delay time is long enough for VIN and VBIAS to be present.
VIN
IN
VOUT
OUT
CIN
1mF
R1
BIAS TPS74201
FB
EN
SS
R2
R
VBIAS
CBIAS
1mF
GND
C
CSS
Figure 26. Soft-Start Delay Using an RC Circuit on Enable
If a signal is not available to enable the device after IN and BIAS, simply connecting EN to IN is acceptable for
most applications as long as VIN is greater than 1.1 V and the ramp rate of VIN and VBIAS is faster the set softstart ramp rate. If the ramp rate of the input sources is slower than the set soft-start time, the output tracks the
slower supply minus the dropout voltage until the set output voltage is reached. If EN is connected to BIAS, the
device does soft-start as programmed provided that VIN is present before VBIAS. If VBIAS and VEN are present
before VIN is applied and the set soft-start time has expired then VOUT tracks VIN.
NOTE
When VBIAS and VEN are present and VIN is not supplied, this device outputs approximately
50 μA of current from OUT. Although this condition will not cause any damage to the
device, the output current may charge up the OUT node if total resistance between OUT
and GND (including external feedback resistors) is greater than 10 kΩ..
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8.2 Typical Applications
Figure 27 is a typical application circuit for the TPS742 adjustable output device.
R1 and R2 can be calculated for any output voltage using the formula shown in Figure 27. See Table 3 for
sample resistor values of common output voltages. To achieve the maximum accuracy specifications, R2 must be
≤ 4.99 kΩ.
VIN
IN
CIN
1mF
PG
R3
BIAS
EN
VBIAS
R1
SS
CBIAS
1mF
VOUT
OUT
TPS74201
FB
GND
CSS
COUT
Optional
R2
VOUT = 0.8 ´
(
1+
R1
R2
)
Figure 27. Typical Application Circuit for the TPS742
Table 3. Standard 1% Resistor Values for Programming the Output Voltage
(See Equation 5)
R1 (kΩ)
R2 (kΩ)
VOUT (V)
Short
Open
0.8
0.619
4.99
0.9
1.13
4.53
1
1.37
4.42
1.05
1.87
4.99
1.1
2.49
4.99
1.2
4.12
4.75
1.5
3.57
2.87
1.8
3.57
1.69
2.5
3.57
1.15
3.3
VOUT = 0.8 × (1 + R1/R2)
(5)
NOTE
When VBIAS and VEN are present and VIN is not supplied, this device outputs approximately
50 μA of current from OUT. Although this condition does not cause any damage to the
device, the output current can charge up the OUT node if total resistance between OUT
and GND (including external feedback resistors) is greater than 10 kΩ.
8.2.1 Design Requirements
The design goals are VIN = 1.8 V, VOUT = 1.5 V, and IOUT = 1 A (maximum). The design optimizes transient
response and meets a 1-ms start-up time with a start-up dominated by the soft-start feature. The input supply
comes from a supply on the same circuit board. The available system rails for VBIAS are 2.7 V, 3.3 V, and 5 V.
The design space consists of CIN, COUT, CBIAS, CSS, VBIAS, R1, R2, and R3, and the circuit is from Figure 27.
This example uses a VIN of 1.8 V, with a VBIAS of 2.5 V.
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8.2.2 Detailed Design Procedure
This is assuming the table for the standard capacitor values is put back in as Table 1.
Utilizing Table 3, we select R1 = 4.12 kΩ for VOUT = 1.5 V. and R2 = 4.75 kΩ. Using Table 1, we select CSS =
1000 pF for a 1-ms typical start-up time. For optimal performance, we use the 5-V rail for a Bias supply. An R3 of
100 kΩ is selected as the PG bus is used by other devices with additional 100-kΩ pullup resistors.
A CIN of 10 µF is used for better transient performance on the input supply, a CBIAS of 1 µF is used to ensure the
Bias supply is solid, and a COUT of 1 µF is used to provide some local capacitance on the output.
8.2.3 Application Curves
100
COUT = 1000mF
Dropout Voltage (mV)
10mV/div
10mV/div
75
+125°C
COUT = 100mF
COUT = 10mF
10mV/div
50
COUT = 0mF
+25°C
25
10mV/div
-40°C
1V/div
1V/ms
0
0
0.5
1.0
Time (50ms/div)
1.5
IOUT (A)
Figure 28. VIN Dropout Voltage vs
IOUT and Temperature (TJ)
Figure 29. VBIAS Line Transient (1.5 A)
COUT = 2 x 470mF (OSCON)
CSS = 0mF
50mV/div
CSS = 0.001mF
COUT = 100mF (Cer.)
50mV/div
CSS = 0.0047mF
1V/div
50mV/div
VOUT
COUT = 10mF (Cer.)
50mV/div
COUT = 0mF
1.2V
VEN
1.5A
1V/div
1A/div
0V
1A/ms
50mA
Time (50ms/div)
Time (1ms/div)
Figure 30. Output Load Transient Response
Figure 31. Turnon Response
9 Power Supply Recommendations
The TPS742 devices are designed to operate from an input voltage from 1.1 V to 5.5 V, provided the bias rail is
at least 1.4-V higher than the input supply. The bias rail and the input supply must both provide adequate
headroom and current for the device to operate normally.
Connect a low-output impedance power supply directly to the IN pin of the TPS742 devices. This supply must
have at least 1 µF of capacitance near the IN pin for stability. A supply with similar requirements must also be
connected directly to the bias rail with a separate 1 µF or larger capacitor.
If the IN pin is tied to the bias pin, a minimum 4.7 µF of capacitance is needed for stability.
To increase the overall PSRR of the solution at higher frequencies, use a pi-filter or ferrite bead before the input
capacitor.
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10 Layout
10.1 Layout Guidelines
An optimal layout can greatly improve transient performance, PSRR, and noise. To minimize the voltage droop
on the input of the device during load transients, connect the capacitance on IN and BIAS as close as possible to
the device. This capacitance also minimizes the effects of parasitic inductance and resistance of the input source
and can therefore improve stability. To achieve optimal transient performance and accuracy, connect the top side
of R1 in Figure 27 as close as possible to the load. If BIAS is connected to IN, TI recommends connecting BIAS
as close to the sense point of the input supply as possible. This connection minimizes the voltage droop on BIAS
during transient conditions and can improve the turnon response.
10.2 Layout Example
Input GND Plane
IN
NC
NC
NC
OUT
Cin
5
4
3
2
1
Vin Plane
R(pull-up)
Vout Plane
IN
6
20 OUT
IN
7
19 OUT
IN
8
PG
9
17
NC
BIAS
10
16
FB/
SNS
18 OUT
Thermal Pad
Cout
11
12
13
14
14
15
GND
NC
NC
SS
Cbias
EN
R1
R1 & R2 should be
connected close to the load,
Cout should be as near to
the LDO as possible
R2
Css
Keep the ground planes on
the same side of the PCB if
possible to improve thermal
disappation
Output GND Plane
Figure 32. Layout Schematic (VQFN Packages)
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10.3 Thermal Protection
Thermal protection disables the output when the junction temperature rises to approximately 160°C, allowing the
device to cool. When the junction temperature cools to approximately 140°C, the output circuitry is enabled.
Depending on power dissipation, thermal resistance, and ambient temperature the thermal protection circuit may
cycle ON and OFF. This cycling limits the dissipation of the regulator, protecting it from damage as a result of
overheating.
Activation of the thermal protection circuit indicates excessive power dissipation or inadequate heatsinking. For
reliable operation, limit junction temperature to 125°C maximum. To estimate the margin of safety in a complete
design (including heatsink), increase the ambient temperature until thermal protection is triggered; use worstcase loads and signal conditions. For good reliability, thermal protection must trigger at least 40°C above the
maximum expected ambient condition of the application. This condition produces a worst-case junction
temperature of 125°C at the highest expected ambient temperature and worst-case load.
The internal protection circuitry of the TPS742 devices is designed to protect against overload conditions. This
circuitry is not intended to replace proper heatsinking. Continuously running the TPS742 devices into thermal
shutdown degrades device reliability.
10.4 Thermal Considerations
Using the thermal metrics ΨJT and ΨJB, shown in Thermal Information, the junction temperature can be estimated
with corresponding formulas (given in Equation 6). For backwards compatibility, an older θJC,Top parameter is
listed as well.
YJT: TJ = TT + YJT · PD
YJB: TJ = TB + YJB · PD
where
•
•
•
PD is the power dissipation given by PD = (VIN – VOUT) × IOUT
TT is the temperature at the center-top of the IC package
TB is the PCB temperature measured 1mm away from the IC package on the PCB surface (as Figure 33
shows).
(6)
NOTE
Both TT and TB can be measured on actual application boards using a thermo-gun (an
infrared thermometer).
For more information about measuring TT and TB, see the application note Using New Thermal Metrics
(SBVA025), available for download at www.ti.com.
22
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Thermal Considerations (continued)
(1)
TT on top of IC
TB on PCB
TT on top of IC
1mm
TB on PCB
surface
(2)
1mm
(a) Example RGW (QFN) Package Measurement
(1)
TT is measured at the center of both the X- and Y-dimensional axes.
(2)
TB is measured below the package lead on the PCB surface.
(b) Example KTW (DDPAK) Package Measurement
Figure 33. Measuring Points for TT and TB
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Thermal Considerations (continued)
Compared with θJA, the new thermal metrics ΨJT and ΨJB are less independent of board size, but they do have a
small dependency. Figure 34 shows characteristic performance of ΨJT and ΨJB versus board size.
Looking at Figure 34, the RGW package thermal performance has negligible dependency on board size. The
KTW package, however, does have a measurable dependency on board size. This dependency exists because
the package shape is not point-symmetric to an IC center. In the KTW package, for example (see Figure 33),
silicon is not beneath the measuring point of TT, which is the center of the X and Y dimension, so that ΨJT has a
dependency. Also, because of that non-point-symmetry, device heat distribution on the PCB is not pointsymmetric, either, so that ΨJB has a dependency.
space
12
YJT and YJB (°C/W)
10
YJB (RGW)
8
YJB (KTW)
6
4
YJT (KTW)
2
YJT (RGW)
0
0
2
4
6
8
10
2
Board Copper Area (in )
Figure 34. ΨJT and ΨJB vs Board Size
For a more detailed discussion of why TI does not recommend using θJC,Top to determine thermal
characteristics, refer to the application note Using New Thermal Metrics (SBVA025), available for download at
www.ti.com. Also, refer to the application note IC Package Thermal Metrics (SPRA953) (also available on the TI
website) for further information.
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
11.1.1.1 Evaluation Modules
An evaluation module (EVM) is available to assist in the initial circuit performance evaluation using the TPS744.
The TPS74201EVM-118 evaluation module (and related user guide) can be requested at the Texas Instruments
website through the product folders or purchased directly from the TI eStore.
11.1.1.2 Spice Models
Computer simulation of circuit performance using SPICE is often useful when analyzing the performance of
analog circuits and systems. A SPICE model for the TPS744 is available through the product folders under Tools
& Software.
11.2 Documentation Support
11.2.1 Related Documentation
For related documentation see the following:
• 6A Current-Sharing Dual LDO
• Using New Thermal Metrics Application Report
11.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
26
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS74201KTWR
ACTIVE
DDPAK/
TO-263
KTW
7
500
RoHS & Green
Call TI | SN
Level-3-245C-168 HR
-40 to 125
TPS74201
Samples
TPS74201KTWRG3
ACTIVE
DDPAK/
TO-263
KTW
7
500
RoHS & Green
SN
Level-3-245C-168 HR
-40 to 125
TPS74201
Samples
TPS74201RGRR
LIFEBUY
VQFN
RGR
20
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
12JA
TPS74201RGRT
ACTIVE
VQFN
RGR
20
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
12JA
Samples
TPS74201RGWR
ACTIVE
VQFN
RGW
20
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
TPS
74201
Samples
TPS74201RGWRG4
ACTIVE
VQFN
RGW
20
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
TPS
74201
Samples
TPS74201RGWT
ACTIVE
VQFN
RGW
20
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
TPS
74201
Samples
TPS74201RGWTG4
ACTIVE
VQFN
RGW
20
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
TPS
74201
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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