TPS7B4255
SBVS441 – DECEMBER 2022
TPS7B4255 70-mA, 40-V, Voltage-Tracking LDO With Voltage-Buffering Capability
1 Features
3 Description
•
The TPS7B4255 is a low-dropout (LDO) voltagetracking regulator, with high tracking accuracy and
excellent load and line transient response. The device
is available in a 5-pin, SOT-23 (DBV) package. The
TPS7B4255 is designed to supply off-board sensors
in industrial applications such as condition monitoring
sensor systems. The device provides integrated
protection features such as reverse polarity, output
short to supply and ground, current limit, and thermal
shutdown to protect against the high risk of cable
failures in an off-board power system. The device is
designed to survive a 45-V (absolute maximum) input
voltage during extreme transient events.
•
•
•
•
•
•
•
•
•
•
•
•
•
Wide input operating voltage range (3 V to 40 V):
– Absolute maximum input range: –40 V to +45 V
Wide output voltage range: 2 V to 30 V
Very-tight, output-tracking tolerance: 5 mV (max)
Low dropout voltage: 500 mV (max) at 70 mA
Reverse polarity protection
Reverse current protection
Combined reference and enable input
Low quiescent current at light loads (100-μA load):
– 50 μA (max)
Wide ESR range:
– Stable with 1-µF to 200-µF ceramic output
capacitor, 1-mΩ to 3-Ω ESR
Overtemperature protection
Output short-circuit protection to ground and
supply
Junction temperature: –40°C to +150°C, TJ
Available in 5-pin SOT-23 DBV package
Buffers signals up to 1 kHz (see the SignalBuffering LDO section)
A reference voltage applied at the ADJ/EN pin is
effectively tracked with high accuracy for loads up to
70 mA. The high tracking accuracy provides accurate
power supply to off-board modules and enables
better accuracy when making measurements using
ratiometric sensors.
By setting the ADJ/EN input pin low, the TPS7B4255
switches to standby mode and reduces the quiescent
current to the minimum value.
2 Applications
•
•
•
•
•
Condition monitoring sensors
Motion detectors (PIR, uWave, and so forth)
Wired controls
Telemetry and RTUs
Robot sensing modules
Package Information(1)
PART NUMBER
TPS7B4255
(1)
PACKAGE
DBV (SOT-23, 5)
BODY SIZE (NOM)
2.90 mm × 1.60 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
DC Supply
IN
IN
DC/DC converter
or LDO
OUT
TPS7B4255
ADJ/EN
OUT
5V
Sensor 1
MCU
ADC
Control Unit Board
Typical Application
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS7B4255
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SBVS441 – DECEMBER 2022
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 3
6.1 Absolute Maximum Ratings........................................ 3
6.2 ESD Ratings............................................................... 3
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................4
6.5 Electrical Characteristics.............................................5
Timing Characteristics.......................................................5
6.6 Typical Characteristics................................................ 6
7 Detailed Description........................................................8
7.1 Overview..................................................................... 8
7.2 Functional Block Diagram........................................... 8
7.3 Feature Description.....................................................8
7.4 Device Functional Modes..........................................11
8 Application and Implementation.................................. 12
8.1 Application Information............................................. 12
8.2 Typical Application.................................................... 13
8.3 Power Supply Recommendations.............................15
8.4 Layout....................................................................... 15
9 Device and Documentation Support............................18
9.1 Device Support......................................................... 18
9.2 Receiving Notification of Documentation Updates....18
9.3 Support Resources................................................... 18
9.4 Trademarks............................................................... 18
9.5 Electrostatic Discharge Caution................................18
9.6 Glossary....................................................................18
10 Mechanical, Packaging, and Orderable
Information.................................................................... 18
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
2
DATE
REVISION
NOTES
December 2022
*
Initial Release
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5 Pin Configuration and Functions
ADJ/EN
1
GND
2
IN
3
5
NC
4
OUT
Not to scale
Figure 5-1. DBV Package, 5-Pin SOT-23 (Top View)
Table 5-1. Pin Functions
PIN
NAME
NO.
TYPE
DESCRIPTION
ADJ/EN pin. Connect the reference voltage to this pin. This pin connects to the error amplifier
internally. A low signal below VIL disables the device and a high signal above VIH enables the
device. Connect the voltage reference directly or with a voltage divider for lower output voltages.
To compensate for line influences, place a capacitor close to this pin.
ADJ/EN
1
I
GND
2
—
Ground pin.
NC
5
—
This pin is not internally connected. Connect this pin to GND for improved thermal performance.
IN
3
I
Input power-supply voltage pin. This pin is the device supply. For best transient response and
to minimize input impedance, use the recommended value or larger ceramic capacitor from IN
to GND as listed in the Recommended Operating Conditions table. Place the input capacitor as
close to the input of the device as possible to compensate for line influences.
O
Regulated output voltage pin. A capacitor is required from OUT to GND for stability. For best
transient response, use the nominal recommended value or larger ceramic capacitor from OUT
to GND; see the Recommended Operating Conditions table. Place the output capacitor as close
to output of the device as possible.
OUT
4
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
VIN
Unregulated input voltage
-40
45
V
VOUT
Regulated output voltage
–5
45
V
VADJ/EN
Adjustable input and enable input voltage
-0.3
45
V
VIN - VOUT
Input output voltage difference
-40
40
V
TJ
Operating junction temperature
–40
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect the device reliability, functionality, performance, and shorten the device lifetime.
6.2 ESD Ratings
VALUE
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
V(ESD)
(1)
(2)
Electrostatic discharge
Charged-device model (CDM), per JEDEC
specification JESD22-C101(2)
UNIT
±1000
All pins
±500
Corner pins
±750
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
TYP
MAX
UNIT
VIN
Unregulated input voltage
3
40
VOUT
Regulated output voltage
2
30
V
IOUT
Output current
0
70
mA
CIN
Input capacitor(1)
0
capacitor(2)
COUT
Output
ESR
Output capacitor ESR requirements
TJ
Operating junction temperature
(1)
(2)
1
V
µF
1
200
0.001
3
µF
Ω
–40
150
°C
For robust EMI performance the minimum input capacitance is 500 nF.
Effective output capacitance of 500 nF minimum required for stability.
6.4 Thermal Information
TPS7B4255
THERMAL METRIC(1)
DBV (SOT-23)(2)
UNIT
5 PINS
RθJA
Junction-to-ambient thermal resistance
176.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
75.6
°C/W
RθJB
Junction-to-board thermal resistance
44.4
°C/W
ΨJT
Junction-to-top characterization parameter
17.9
°C/W
ΨJB
Junction-to-board characterization parameter
44.1
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
(2)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
Evaluated using JEDEC standard (2s2p).
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6.5 Electrical Characteristics
specified at TJ = –40°C to +150°C, VIN = 13.5 V, IOUT = 100 µA, COUT = 1 µF, 1 mΩ < COUT ESR < 2 Ω, CIN = 1 µF,
and VADJ = 5 V (unless otherwise noted), typical values are at TJ = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
–5
MAX
UNIT
ΔVOUT
Output voltage tracking accuracy
VIN = VOUT + 600 mV to 40 V, IOUT = 100 µA to 70 mA
5
mV
ΔVOUT(ΔVIN)
Line regulation
VIN = VOUT + 600 mV to 40 V
0.5
mV
ΔVOUT(ΔIOUT)
Load regulation
VIN = VOUT + 600 mV, IOUT = 100 µA to 70 mA (1)
0.5
mV
VIN = 5.6 V to 40 V, IOUT = 100 µA, TJ = 25ºC
IQ
Quiescent current
IGND
Ground current
34
40
VIN = 5.6 V to 40 V, IOUT = 100 µA, -40ºC < TJ < 85ºC
45
VIN = 5.6 V to 40 V, IOUT = 100 µA
50
VIN = 5.6 V to 40 V, IOUT = 70 mA, TJ = 25ºC
470
VIN = 5.6 V to 40 V, IOUT = 70 mA
550
IOUT = 70 mA, VADJ ≥ 3.3 V, VIN = VADJ
470
IOUT = 50 mA, VADJ ≥ 4 V, VIN = VADJ
330
µA
VDO
Dropout voltage
ISHUTDOWN
Shutdown supply current (IGND)
IADJ/EN
ADJ/EN pin current
VUVLO(RISING)
Rising input supply UVLO
VIN rising
2.6
2.7
2.81
VUVLO(FALLING)
Falling input supply UVLO
VIN falling
2.3
2.4
2.5
VUVLO(HYST)
VUVLO(IN) hysteresis
VIL
Adjustable and enable logic input low
level
VIH
Adjustable and enable logic input high
level
ICL
Output current limit
VIN = VOUT + 1 V, VOUT short to 90% x VADJ
PSRR
Power-supply ripple rejection
VIN - VOUT = 1 V, Frequency = 100 Hz, IOUT = 70 mA
Vn
Output noise voltage
VOUT = 3.3 V, IOUT = 1 mA, a 5 µVRMS reference is used for
this measurement
IR
Reverse current at VIN
VIN = 0 V, VOUT = 20 V, VADJ = 5 V
-0.25
0.25
IRN1
Reverse current at negative VIN
VIN = -20 V, VOUT = 20 V, VADJ = 5 V
-0.5
0.5
IRN2
Reverse current at negative VIN
VIN = -20 V, VOUT = 0 V, VADJ = 5 V
-0.5
0.5
TJ
Junction temperature
TSD(SHUTDOWN)
Junction shutdown temperature
175
°C
TSD(HYST)
Hysteresis of thermal shutdown
15
°C
(1)
VADJ/EN = 0 V
3
0.25
300
mV
µA
V
mV
1
V
1.65
75
100
130
mA
80
dB
150
µVRMS
–40
150
µA
°C
Power dissipation is limited to 2 W for device production testing purposes. The power dissipation can be higher during normal
operation. Please see the thermal dissipation section for more information on how much power the device can dissipate while
maintaining a junction temperature below 150℃.
Timing Characteristics
specified at VIN = 13.5 V, IOUT = 100 µA, COUT = 1 µF, CIN = 1 µF, and VADJ = 5 V (unless otherwise noted), typical values are
at TJ = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Timing Characteristics
tstartup
Startup time
Time from EN high to VOUT = 95% × VADJ
255
µs
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6.6 Typical Characteristics
VIN = VADJ/EN = 5 V
VIN = VADJ/EN = 5 V, IOUT = 5 mA, 20 mA, 50 mA, 70 mA
Figure 6-2. Dropout Voltage vs Output Current
Figure 6-1. Dropout Voltage vs Temperature
600
100µA
20mA
500
50mA
70mA
IGND (A)
400
300
200
100
0
-55
-30
VIN = 13.5 V, VADJ/EN = 5 V
-5
20
45
70
Temperature (C)
95
120
145
VIN = 13.5 V, VADJ/EN = 5 V
Figure 6-3. Ground Current vs Output Current
Figure 6-4. Ground Current vs Temperature
120
115
Current Limit (mA)
110
105
100
95
90
85
80
-55
-30
-5
20
45
70
Temperature (C)
95
120
145
VIN = 13.5 V, VADJ/EN = 5 V
VIN = 13.5 V, VADJ/EN = 5 V
Figure 6-5. Current Limit vs Temperature
6
Figure 6-6. Tracking Error vs Temperature
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6.6 Typical Characteristics (continued)
8
-55°C
-40°C
7
0°C
25°C
85°C
125°C
150°C
6
VOUT (V)
5
4
3
2
1
0
-1
5
10
15
20
VIN (V)
25
30
35
40
VADJ/EN = 5 V, IOUT = 10 mA
VIN = 13.5 V, IOUT = 10 mA
Figure 6-7. Output Voltage vs Input Voltage
Figure 6-8. Output Voltage vs Adjustable Voltage
IOUT (mA)
80
70
30
IOUT
VOUT 20
60
10
50
0
40
-10
30
-20
20
-30
10
-40
0
0
VADJ/EN = 5 V, COUT = 10 μF, VIN = 9 V to 16 V
100
200
300
400 500 600
Time (s)
700
800
-50
900 1000
AC Coupled Output Voltage - VOUT (mV)
0
VIN = 13.5 V, VADJ/EN = 5 V, COUT = 10 μF,
IOUT = 1 mA to 30 mA
Figure 6-9. Line Transient
Figure 6-10. Load Transient
VIN = 13.5 V, COUT = 10 µF, IOUT = 1 mA, 10 mA, 50 mA,
70 mA, VADJ/EN = 5 V
Figure 6-12. Load Capacitance vs ESR Stability
Figure 6-11. Power-Supply Rejection Ratio vs Frequency
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7 Detailed Description
7.1 Overview
The TPS7B4255 is an integrated, low-dropout (LDO) voltage tracker with ultra-low tracking tolerance. Because
of the high risk of cable shorts when powering sensors off-board, multiple protection features are built into the
LDO including short to battery, short to GND, and reverse current protection.
This device features thermal shutdown protection, brick-wall current limiting, undervoltage lockout (UVLO), and
reverse current protection.
7.2 Functional Block Diagram
IN
OUT
VIN
Load
Reverse
Current
Protection
Internal
Supply
Brick-wall
Current
Limit
UVLO
+
Logic
Control
–
Thermal
Shutdown
ADJ/EN
VREF
GND
Figure 7-1. Functional Block Diagram
7.3 Feature Description
7.3.1 Regulated Output (VOUT)
This device is a tracking LDO; thus, the output voltage is determined by the voltage provided to the ADJ/EN
pin, provided that VIN is greater than VIH. When the voltage at the ADJ/EN pin exceeds the required voltage to
enable the LDO (VIH), the output begins to rise to the voltage on the ADJ/EN pin. The output rises linearly as
determined by the load, the output capacitor, and the current limit. When the voltage reaches the level on the
ADJ/EN pin, the output voltage remains within 5 mV from the voltage set on the ADJ/EN pin over all specified
operating conditions.
7.3.2 Undervoltage Lockout
The device has an internally fixed undervoltage lockout threshold. Undervoltage lockout activates when the
input voltage on VIN drops below the undervoltage lockout (UVLO) level (see the VUVLO(FALLING) parameter in
the Electrical Characteristics table). This activation makes sure the regulator is not latched into an unknown
state during a low input supply voltage. If the input voltage has a negative transient that drops below the UVLO
threshold and recovers, the regulator shuts down and powers up in the standard power-up sequence when the
input voltage recovers to the required level (see the VUVLO(RISING) parameter in the Electrical Characteristics
table).
8
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7.3.3 Thermal Protection
Thermal protection disables the output when the junction temperature rises to approximately 175°C, which
allows the device to cool. When the junction temperature cools to approximately 160°C, the output circuitry
enables. Based on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit
can cycle off and on until the excessive power dissipation condition is removed. This cycling limits the dissipation
of the regulator, thus protecting the regulator from damage as a result of overheating.
The internal protection circuitry of the TPS7B4255 is designed to protect against overload conditions. The
circuitry is not intended to replace proper heat sinking. Continuously running the TPS7B4255 into thermal
shutdown degrades device reliability.
7.3.4 Current Limit
The device has an internal current limit circuit to protect the device during overcurrent or shorting conditions.
The current limit circuit, as shown in Figure 7-2, is a brick-wall scheme. When the device is in current limit, the
device sources ICL and the output voltage is not regulated. In this scenario, the output voltage depends on the
load impedance.
During a current limit event, the potential for high power dissipation exists because of the elevated current level
and the increased input-to-output differential voltage (VIN – VOUT). If the device heats enough, the device can
enter thermal shutdown. If the current-limit condition is not removed when the device turns back on after cooling,
the device can enter thermal shutdown again and continue this cycle until the current limit condition is removed.
The device survives this fault, but repeatedly operating in this mode degrades long-term reliability.
VOUT
Brickwall
VOUT(NOM)
IOUT
0V
IRATED
0 mA
ICL
Figure 7-2. Current Limit: Brick-Wall Scheme
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7.3.5 VOUT Short to Battery
When the output is shorted to the supply (as shown in Figure 7-3), the TPS7B4255 survives and no damage
occurs to the device. As shown in Figure 7-4, a short to the supply can also occur when the device is powered
by an isolated supply at a lower voltage. In this example, the TPS7B4255 supply input voltage is set at 7 V when
a short to the main supply (14 V typical) occurs on VOUT, which typically runs at 5 V. The device survives without
damage, and continuous reverse current that flows out through VIN is less than 5 μA.
Main System Supply
14 V (typical)
Switch
Switch
VSYS
Main System Supply
14 V (typical)
IN
TPS7B4255
OUT
Isolated Supply
Vreg
VSYS
1 µF
IN
TPS7B4255
OUT
1 µF
ADJ/EN
Vreg
7-V VIN
2.2 µF
2.2 µF
GND
5-V Vref
ADJ/EN
GND
5-V Vref
Figure 7-3. Output Voltage Short to Supply
Figure 7-4. Output Voltage Higher Than the Input
7.3.6 Tracking Regulator With an Enable Circuit
Pulling the reference voltage below 0.7 V disables the device, and the device enters a sleep state where the
device draws 3 μA (max) from the power supply. In a typical application, the reference voltage is generally
sourced from another LDO voltage rail. A scenario where the device must be disabled without a shutdown of the
reference voltage can occur; the device can be configured as shown in Figure 7-5 in this case. The TPS7B84-Q1
is a 150-mA LDO with ultra-low quiescent current that is used as a reference voltage to the TPS7B4255 and
also as a power supply to the ADC. The operational status of the device is controlled by a microcontroller (MCU)
input or output.
IN
OUT
Sensor
OUT
IN
Vsys
ADC
10 µF
2.2 µF
TPS7B4255
22 µF
TPS7B84-Q1
10 µF
47k
GND
GND
ADJ/EN
EN
100k
MCU I/O
47k
Figure 7-5. Tracking an LDO With an Enable Circuit
10
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7.4 Device Functional Modes
The device operates with input voltages above 3 V to ensure proper operation. The device turns on when VIN is
greater than VUVLO(RISING) and VADJ/EN is greater than VIH, and operates correctly as long as the input voltage
stays above 3 V.
7.4.1 Operation With VIN < 3 V
For voltages below 3 V and above VUVLO(FALLING), the LDO continues to operate but certain circuits can
possibly not have the proper headroom to operate within specification. When the input voltage drops below
VUVLO(FALLING) the device shuts off again.
7.4.2 Operation With ADJ/EN Control
The ADJ/EN pin operates as both the reference and the enable pin to the LDO. When the input voltage is
greater than VUVLO(RISING) and VADJ/EN is greater than VIH, the LDO is enabled and functional. When in this
mode, the LDO tracks the voltage at the ADJ/EN pin because this pin functions as the reference to the control
loop in the error amplifier. When VIN is greater than VUVLO(RISING) and VADJ/EN is lower than VIL, the LDO is
disabled and is in a lower power mode.
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8 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
8.1 Application Information
Depending on the end-application, different values of external components can be used. An application can
require a larger output capacitor during fast load steps to prevent a reset from occurring. Use a low ESR ceramic
capacitor with a dielectric of type X5R or X7R for better load transient response.
8.1.1 Dropout Voltage
Dropout voltage (VDO) is defined as the input voltage minus the output voltage (VIN – VOUT) when the pass
transistor is fully on. This condition arises when the input voltage falls to the point where the error amplifier must
drive the pass device all the way to the rail and has no remaining headroom for the control loop to operate. The
pass transistor is in the ohmic or triode region of operation, and acts as a switch. The dropout voltage indirectly
specifies a minimum input voltage greater than the nominal programmed output voltage at which the output
voltage is expected to stay in regulation. If the input voltage falls to less than the nominal output regulation, then
the output voltage follows, minus the dropout voltage (VDO).
In dropout mode, the output is no longer regulated, and transient performance is severely degraded. The device
loses PSRR, and load transients can cause large output voltage deviation.
For a CMOS regulator, the dropout voltage is determined by the drain-source on-state resistance (RDS(ON)) of
the pass transistor. Therefore, if the linear regulator operates at less than the rated output current (IRATED, see
the Recommended Operating Conditions table), the dropout voltage for that current scales accordingly. The
following equation calculates the RDS(ON) of the device.
V
RDS(ON)= I DO
(1)
RATED
8.1.2 Reverse Current
The TPS7B4255 incorporates reverse current protection that prevents damage from a reverse polarity (that is,
when VOUT is higher than VIN). During a reverse polarity event, where the VIN and VOUT absolute maximum
ratings are not violated and VOUT – VIN is less than 40 V, no damage occurs and less than 5 μA flows out of VIN.
The reverse current comparator typically responds to a reverse voltage condition and limits the reverse current in
1 μs.
8.1.3 Signal-Buffering LDO
The TPS7B4255 can be used as a signal buffer up to frequencies of 1 kHz. The output tracks the signal in
the ADJ/EN pin if VADJ/EN(min) is greater than VIH. A phase change begins at approximately 2 kHz, causing
distortion in the output signal. At frequencies higher than 2 kHz, the signal gets attenuated and distorted further.
Low-dropout regulators (LDOs) cannot sink current into the output, so for the signal-buffering circuit to operate
correctly, the device must be loaded. The buffering LDO is limited by the current capability of the device, so use
the minimum output capacitor (1 μF) to avoid high AC current.
Figure 8-1 and Figure 8-2 depict the gain and phase, respectively, for the buffering LDO with resistive loads of
62 Ω, 100 Ω, and 330 Ω, and COUT = 1 μF.
12
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10
9
8
7
6
5
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
10
SBVS441 – DECEMBER 2022
10
0
-10
-20
-30
-40
Phase ()
Gain (dB)
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-50
-60
-70
-80
-90
RLoad
62
100
330
-100
-110
100
1000
10000
100000
RLoad
62
100
330
-120
10
100
1000
Frequency (Hz)
10000
100000
Frequency (Hz)
Figure 8-1. VADJ/EN Gain vs Frequency
Figure 8-2. VADJ/EN Phase vs Frequency
8.2 Typical Application
Figure 8-3 shows a typical application circuit for the TPS7B4255.
IN
Vsupply
TPS7B4255
OUT
Vreg
2.2 µF
1 µF
Vref
Optional
ADJ/EN
Vref
GND
0.1 µF
Figure 8-3. Typical Application Schematic
8.2.1 Design Requirements
Use the parameters listed in Table 8-1 for this design example.
Table 8-1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUES
Input voltage
3 V to 40 V
ADJ/EN reference voltage
2 V to 30 V
Output voltage
2 V to 30 V
Output current rating
70 mA
Output capacitor range
1 µF to 200 µF
Output capacitor ESR range
1 mΩ to 3 Ω
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8.2.2 Detailed Design Procedure
8.2.2.1 Input and Output Capacitor Selection
The TPS7B4255 requires an output capacitor of at least 1 µF (500 nF or larger capacitance) for stability and
an equivalent series resistance (ESR) between 0.001 Ω and 3 Ω. Without the output capacitor, the regulator
oscillates. For best transient performance, use X5R- and X7R-type ceramic capacitors because these capacitors
have minimal variation in value and ESR over temperature. When choosing a capacitor for a specific application,
be mindful of the DC bias characteristics for the capacitor. Higher output voltages cause a significant derating of
the capacitor. For best performance, the maximum recommended output capacitor is 200 µF.
Although an input capacitor is not required for stability, good analog design practice is to connect a capacitor
from IN to GND, connected close to the device pins. Some input supplies have a high impedance; thus,
placing the input capacitor on the input supply helps reduce the input impedance. This capacitor counteracts
reactive input sources and improves transient response, input ripple, and PSRR. If the input supply has a high
impedance over a large range of frequencies, several input capacitors can be used in parallel to lower the
impedance over frequency. Use a higher-value capacitor if large, fast rise-time load transients are anticipated, or
if the device is located several inches from the input power source.
8.2.3 Application Curves
14
14
12
12
10
→
6
4
VOUT
2
160
0
VIN
8
6
VOUT
4
VADJ/EN
Right Scale
→
160
2
0
IIN
IIN
-2
Left Scale
0
Current (mA)
VADJ/EN
Right scale
80
10
IIN
VADJ/EN
VOUT
VIN
8
Voltage (V)
VIN
Voltage (V)
Current (mA)
IIN
VADJ/EN
VOUT
VIN
80
0
-80
-2
Left Scale
-80
50
100
150
200
250
300
350
400
450
500
0
200
400
600
800
Time (s)
VIN = 12 V, VADJ/EN = 5 V, VADJ/EN slew rate = 1 V/μs, CIN =
COUT = 1 μF, RLOAD = 470 Ω
1200
1400
1600
1800
2000
VIN = 12 V, VADJ/EN = 5 V, VADJ/EN slew rate = 1 V/μs, CIN =
COUT = 1 μF, RLOAD = 470 Ω
Figure 8-4. Power-Up
Figure 8-5. Power-Down
100
5.4
90
Right Scale
VIN
VOUT
80
VIN (V)
1000
Time (s)
→
5.2
5
70
4.8
60
4.6
50
4.4
40
4.2
30
4
20
3.8
10
3.6
0
0
50
100
150
200 250 300
Time (s)
350
400
450
VOUT (V)
0
3.4
500
COUT = 1 μF, VADJ/EN = 5 V, IOUT = 70 mA, VIN slew rate = 1 V/μs
Figure 8-6. Dropout Exit Recovery
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8.3 Power Supply Recommendations
The device is designed to operate from an input voltage supply range from 3 V to 40 V. If the input supply is
located more than a few inches from the TPS7B4255, add an electrolytic capacitor with a value of 10 µF and a
ceramic bypass capacitor at the input.
8.4 Layout
8.4.1 Layout Guidelines
For best overall performance, place all circuit components on the same side of the circuit board and as near
as practical to the respective LDO pin connections. Place ground return connections to the input and output
capacitor, and to the LDO ground pin as close as possible to each other, connected by a wide, component-side,
copper surface. The use of vias and long traces to the input and output capacitors is strongly discouraged and
negatively affects system performance. TI also recommends a ground reference plane either embedded in the
PCB or located on the bottom side of the PCB opposite the components. This reference plane serves to assure
accuracy of the output voltage, shield noise, and behaves similarly to a thermal plane to spread (or sink) heat
from the LDO device when connected to the thermal pad. In most applications, this ground plane is necessary to
meet thermal requirements.
8.4.1.1 Package Mounting
Solder-pad footprint recommendations for the TPS7B4255 are available at the end of this document and at
www.ti.com.
8.4.1.2 Board Layout Recommendations to Improve PSRR and Noise Performance
To improve AC performance (such as PSRR, output noise, and transient response), design the board with
separate ground planes for VIN and VOUT, with each ground plane connected only at the GND pin of the device.
In addition, the ground connection for the output capacitor must connect directly to the GND pin of the device.
Equivalent series inductance (ESL) and ESR must be minimized in order to maximize performance and ensure
stability. Every capacitor must be placed as close as possible to the device and on the same side of the printed
circuit board (PCB) as the regulator.
Do not place any of the capacitors on the opposite side of the PCB from where the regulator is installed. Using
vias and long traces is strongly discouraged because of the negative impact on system performance. Vias and
long traces can also cause instability.
If possible, and to make sure that the maximum performance is as denoted in this product data sheet, use the
same layout pattern used for the TPS7B4255 evaluation board, available at www.ti.com.
8.4.1.3 Power Dissipation and Thermal Considerations
Equation 2 calculates the device power dissipation.
PD = IOUT × (VIN – VOUT) + IQ × VIN
(2)
where:
•
•
•
•
•
PD = Continuous power dissipation
IOUT = Output current
VIN = Input voltage
VOUT = Output voltage
IQ = Quiescent current
Because IQ is much less than IOUT, the term IQ × VIN in Equation 2 can be ignored.
Calculate the junction temperature (TJ) with Equation 3 for a device under operation at a given ambient air
temperature (TA).
TJ = TA + (RθJA × PD)
(3)
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where:
•
RθJA = Junction-to-junction-ambient air thermal impedance
Equation 4 calculates a rise in junction temperature because of power dissipation.
ΔT = TJ – TA = (RθJA × PD)
(4)
The maximum ambient air temperature (TAMAX) at which the device can operate can be calculated with Equation
5 for a given maximum junction temperature (TJMAX).
TAMAX = TJMAX – (RθJA × PD)
(5)
8.4.1.4 Thermal Performance Versus Copper Area
The most used thermal resistance parameter RθJA is highly dependent on the heat-spreading capability built into
the particular PCB design, and therefore varies according to the total copper area, copper weight, and location
of the planes. The RθJA recorded in the Thermal Information table is determined by the JEDEC standard (Figure
8-7), PCB, and copper-spreading area, and is only used as a relative measure of package thermal performance.
For a well-designed thermal layout, RθJA is actually the sum of the package junction-to-case (bottom) thermal
resistance (RθJCbot) plus the thermal resistance contribution by the PCB copper.
Wire
Die
Mold
Compound
Die
Attach
2oz
Signal
Trace
Internal Signal
or power plane
1oz copper
Lead
Frame
Internal
GND plane
1oz copper
Thermal
Vias
Bottom
Relief
2oz copper
Thermal
Pad or Tab
of the LDO
Figure 8-7. JEDEC Standard 2s2p PCB
Figure 8-8 and Figure 8-9 illustrate the functions of RθJA and ψJB versus copper area and thickness. These plots
are generated with a 101.6-mm × 101.6-mm × 1.6-mm PCB of two and four layers. For the 4-layer board, inner
planes use 1-oz copper thickness. Outer layers are simulated with both 1-oz and 2-oz copper thickness. A 4 x 5
(DBV package) array of thermal vias with a 300-µm drill diameter and 25-µm copper plating is located as close
as practical to the GND pin of the device. The thermal vias connect the top layer, the bottom layer and, in the
case of the 4-layer board, the first inner GND plane. Each of the layers has a copper plane of equal area.
As illustrated in Figure 8-9, ψJB increases with increasing connecting copper area. The reason for this increase
is that the board temperature is measured at the copper near the GND pin, and because the GND pin is fused
to the die pad, more heat escapes through the GND pin when more copper is connected to the pad, and thus
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the temperature at this point is higher. Consequently the ψJB increases. This increase does not imply that heat
sinking for the device is reduced when more connecting copper is added. Increasing connecting copper area
always increases board-level heat sinking for the device. Furthermore, the boards used for Figure 8-9 have
vias connecting to internal copper planes. Therefore, ψJB is much higher than what is specified in the Thermal
Information table, which uses the high-K board layout specified in JESD51-7 that has no thermal vias.
90
4
4
2
2
Thermal Resistance - JB (C/W)
89
88
Layer
Layer
Layer
Layer
PCB,
PCB,
PCB,
PCB,
1
2
1
2
oz
oz
oz
oz
copper
copper
copper
copper
87
86
85
84
83
82
81
80
0
Figure 8-8. RθJA vs Copper Area (DBV Package)
10
20
30
40
50
60
Cu Area Per Layer (cm2)
70
80
90
100
Figure 8-9. ψJB vs Copper Area (DBV Package)
8.4.2 Layout Example
ADJ/EN
1
NC
5
GND
2
3
4
IN
OUT
Circles denote PCB via connections
Figure 8-10. DBV Package Layout Example
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9 Device and Documentation Support
9.1 Device Support
9.1.1 Device Nomenclature
Table 9-1. Device Nomenclature(1)
PRODUCT
TPS7B4255yyyR
(1)
VOUT
yyy is the package designator.
R is the packaging quantity.
For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the
device product folder on www.ti.com.
9.1.2 Development Support
9.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
9.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
9.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
9.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
9.6 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
10 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
18
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PACKAGE OPTION ADDENDUM
www.ti.com
25-Oct-2023
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS7B4255DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2W4F
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of