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UCC27518A-Q1, UCC27519A-Q1
SLVSC90B – AUGUST 2013 – REVISED AUGUST 2015
UCC2751xA-Q1 Single-Channel High-Speed Low-Side Gate Driver With Negative Input
Voltage Capability
1 Features
3 Description
•
•
The UCC2751xA-Q1 single-channel high-speed lowside gate driver devices effectively drive MOSFET
and IGBT power switches. With a design that
inherently minimizes shoot-through current, the
UCC2751xA-Q1 family of devices sources and sinks
high, peak-current pulses into capacitive loads
offering rail-to-rail drive capability and extremely small
propagation delay typically 17 ns.
1
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results:
– Device Automotive Qualified Grade 1: –40°C
to +125°C Ambient Operating Temperature
Range
– Device HBM ESD Classification Level 2
– Device CDM ESD Classification Level C6
Low-Cost Gate-Driver Device Offering Superior
Replacement of NPN and PNP Discrete Solutions
Pin-to-Pin Compatible With TI's TPSS2828-Q1
and the TPS2829-Q1
4-A Peak Source and 4-A Peak Sink Symmetrical
Drive
Fast Propagation Delays (17-ns typical)
Fast Rise and Fall Times (8-ns and 7-ns typical)
4.5-V to 18-V Single Supply Range
Outputs Held Low During VDD UVLO (Ensures
Glitch-Free Operation at Power-Up and PowerDown)
CMOS Input Logic Threshold (Function of Supply
Voltage With Hysteresis)
Hysteretic Logic Thresholds for High Noise
Immunity
EN Pin for Enable Function (Allowed to be no
Connect)
Ability to Support Negative Voltages (–5 V) at
Input and Enable pins
Output Held Low when Input Pins are Floating
Input Pin Absolute Maximum Voltage Levels Not
Restricted by VDD Pin Bias Supply Voltage
Operating Temperature Range of –40°C to 140°C
5-Pin DBV Package (SOT-23)
2 Applications
•
•
•
•
•
•
Automotive
Switch-Mode Power Supplies
DC-to-DC Converters
Companion Gate Driver Devices for Digital Power
Controllers
Solar Power, Motor Control, UPS
Gate Driver for Emerging Wide Band-Gap Power
Devices (such as GaN)
The UCC2751xA-Q1 family of devices provides 4-A
source, 4-A sink (symmetrical drive) peak-drive
current capability at VDD = 12 V.
The UCC2751xA-Q1 family of devices operates over
a wide VDD range of 4.5 V to 18 V and wide
temperature range of –40°C to 140°C. Internal
undervoltage lockout (UVLO) circuitry on VDD pin
holds output low outside VDD operating range. The
ability to operate at low voltage levels such as below
5 V, along with best in class switching characteristics,
is especially suited for driving emerging wide bandgap power switching devices such as GaN powersemiconductor devices.
The input pin threshold of the UCC2751xA-Q1 family
of devices is based on CMOS logic where the
threshold voltage is a function of the VDD supply
voltage. Typically, the input high threshold (VIN–H) is
55% VDD and the input low threshold (VIN–L) is 39%
VDD. Wide hysteresis (16% VDD typically) between the
high and low thresholds offers excellent noise
immunity and allows users to introduce delays using
RC circuits between the input PWM signal and the
INx pin of the device.
Device Information(1)
PART NUMBER
PACKAGE
UCC27518A-Q1
SOT-23 (5)
UCC27519A-Q1
BODY SIZE (NOM)
2.90 mm × 1.60 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Typical Application Diagram
UCC27518A-Q1
UCC27519A-Q1
EN
1
EN
VDD
4.5 V to 18 V
V+
5
C1
2
GND
3
IN+/IN-
Q1
R1
IN
OUT
4
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
UCC27518A-Q1, UCC27519A-Q1
SLVSC90B – AUGUST 2013 – REVISED AUGUST 2015
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Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Description (continued).........................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
8.1
8.2
8.3
8.4
8.5
8.6
8.7
9
1
1
1
2
3
3
4
5
Absolute Maximum Ratings ...................................... 5
ESD Ratings.............................................................. 5
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 5
Electrical Characteristics........................................... 6
Switching Characteristics .......................................... 7
Typical Characteristics ............................................ 10
Detailed Description ............................................ 13
9.1 Overview ................................................................. 13
9.2 Functional Block Diagram ....................................... 14
9.3 Feature Description................................................. 14
9.4 Device Functional Modes........................................ 17
10 Application and Implementation........................ 18
10.1 Application Information.......................................... 18
10.2 Typical Application ................................................ 18
11 Power Supply Recommendations ..................... 21
12 Layout................................................................... 22
12.1
12.2
12.3
12.4
Layout Guidelines .................................................
Layout Example ....................................................
Thermal Consideration..........................................
Power Dissipation .................................................
22
23
23
23
13 Device and Documentation Support ................. 25
13.1
13.2
13.3
13.4
13.5
Related Links ........................................................
Community Resource............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
25
25
25
25
25
14 Mechanical, Packaging, and Orderable
Information ........................................................... 25
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (September 2013) to Revision B
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
•
Changed the OUT (OUTA, OUTB) voltage parameter to show values for DC and repetitive pulse in the Absolute
Maximum Ratings table .......................................................................................................................................................... 5
•
Changed the minimum value of IN+, IN–, and EN pins from –0.3 V to –6 V in the Absolute Maximum Ratings table ........ 5
•
Updated the startup current parameter for the bias current in the Electrical Characteristics table ....................................... 6
•
Moved timing and switching parameters into new Switching Characteristics table .............................................................. 7
Changes from Original (August 2013) to Revision A
•
2
Page
Changed document status from Product Preview to Production Data ................................................................................... 1
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SLVSC90B – AUGUST 2013 – REVISED AUGUST 2015
5 Description (continued)
The UCC2751xA-Q1 family of devices also features a floatable enable function on the EN pin. The EN pin can
be left in a no-connect condition, which allows pin-to-pin compatibility between the UCC2751xA-Q1 family of
devices and the TPS2828-Q1 or TPS2829-Q1 device, respectively. The enable pin threshold is a fixed voltage
threshold and does not vary based on VDD pin bias voltage. Typically, the enable high threshold (VEN-H) is 2.1 V
and the enable low threshold (VEN-L) is 1.25 V.
6 Device Comparison Table
The UCC2751x family of gate-driver products (Table 1) represent Texas Instruments’ latest generation of singlechannel, low-side high-speed gate driver devices featuring high-source and sink current capability, industry bestin-class switching characteristics, and a host of other features (Table 2) all of which combine to ensure efficient,
robust, and reliable operation in high-frequency switching power circuits.
Table 1. UCC2751x Product Family Summary
(1)
PART NUMBER (1)
PACKAGE
UCC27511DBV
UCC27511ADBVQ1
SOT-23, 6 pin
UCC27512DRS
3-mm × 3-mm WSON, 6 pin
UCC27516DRS
3-mm × 3-mm WSON, 6 pin
UCC27517DBV
UCC27517ADBVQ1
UCC27517ADBV
SOT-23, 5 pin
UCC27518DBV
UCC27518ADBVQ1
SOT-23, 5 pin
UCC27519DBV
UCC27519ADBVQ1
SOT-23, 5 pin
PEAK CURRENT (SOURCE,
SINK)
INPUT THRESHOLD LOGIC
4 A, 8 A
(Asymmetrical Drive)
CMOS and TTL-Compatible
(low voltage, independent of VDD
bias voltage)
4 A, 4 A
(Symmetrical Drive)
CMOS
(follows VDD bias voltage)
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7 Pin Configuration and Functions
UCC27518A-Q1 DBV Package
5-Pin SOT-23
Top View
EN
1
GND
2
IN-
3
5
UCC27519A-Q1 DBV Package
5-Pin SOT-23
Top View
VDD
4
OUT
EN
1
GND
2
IN+
3
5
VDD
4
OUT
Pin Functions
PIN
NO.
NAME
I/O
DESCRIPTION
Enable input. When the EN pin is biased LOW, the output is disabled regardless of
input state. When the EN pin is biased high or left floating, the output is enabled. The
EN pin is allowed to float because it is pin-to-pin compatible with the NC pin of the
TPS282x device.
1
EN
I
2
GND
—
IN– (UCC27518A-Q1)
I
Input. This pin is the inverting input in the UCC27518A-Q1 device. The output is held
LOW if the IN– pin is unbiased or floating.
IN+ (UCC27519A-Q1)
I
Input. This pin is the noninverting input in the UCC27519A-Q1 device. The output is
held LOW if the IN+ pin is unbiased or floating.
4
OUT
O
Sourcing and sinking current output of driver.
5
VDD
I
Supply input.
3
4
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Ground. All signals are referenced to this pin.
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8 Specifications
8.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2) (3)
Supply voltage
OUTA, OUTB voltage
MIN
MAX
UNIT
VDD
–0.3
20
V
DC
–0.3
VDD + 0.3
–2
VDD + 0.3
Repetitive pulse < 200 ns (4)
Output continuous current
IOUT_DC (source/sink)
Output pulsed current (0.5 µs)
IOUT_pulsed (source/sink)
V
0.3
A
4
A
IN+, IN–, EN (5)
–6
20
V
Operating virtual junction temperature, TJ
–40
150
°C
Lead temperature
Soldering, 10 s
300
Reflow
260
Storage temperature, Tstg
(1)
(2)
(3)
(4)
(5)
–65
°C
150
°C
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to GND unless otherwise noted. Currents are positive into, negative out of the specified terminal. See
Packaging Section of the datasheet for thermal limitations and considerations of packages.
These devices are sensitive to electrostatic discharge; follow proper device handling procedures.
Values are verified by characterization on bench
Maximum voltage on input pins is not restricted by the voltage on the VDD pin.
8.2 ESD Ratings
VALUE
V(ESD)
(1)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002 (1)
±2500
Charged-device model (CDM), per AEC Q100-011
±1500
UNIT
V
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
8.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
Supply voltage, VDD
Input voltage, (IN+ and IN–) and enable (EN)
Operating ambient temperature
MIN
NOM
MAX
4.5
12
18
UNIT
V
0
18
V
–40
140
°C
8.4 Thermal Information
THERMAL METRIC (1)
UCC27518A-Q1
UCC27519A-Q1
DBV (SOT-23)
UNIT
5 PINS
RθJA
Junction-to-ambient thermal resistance
215.5
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
136.1
°C/W
RθJB
Junction-to-board thermal resistance
43.2
°C/W
ψJT
Junction-to-top characterization parameter
20.3
°C/W
ψJB
Junction-to-board characterization parameter
42.3
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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8.5 Electrical Characteristics
VDD = 12 V, TA = –40°C to 140°C, 1-µF capacitor from VDD to GND. Currents are positive into, negative out of the specified
terminal.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
IN+ = VDD (UC27519A-Q1)
IN– = GND (UCC27518A-Q1)
51
85
123
IN– = VDD (UCC27518A-Q1)
51
70
103
IN+ = GND (UC27519A-Q1)
51
70
110
3.85
4.2
4.57
3.8
4.2
4.67
UNIT
BIAS CURRENTS
IDD(off)
Startup current
VDD = 3.4 V
µA
UNDERVOLTAGE LOCKOUT (UVLO)
TA = 25°C
VON
Supply start threshold
VOFF
Minimum operating
voltage after supply start
3.45
3.9
4.35
V
VDD_H
Supply voltage hysteresis
0.19
0.3
0.45
V
55
62
TA = –40°C to 140°C
V
INPUTS (IN+, IN–)
Input signal high
threshold
VIN_H
VIN_L
Input signal low threshold
VIN_HYS
Input signal hysteresis
VIN_H
Input signal high
threshold
VIN_L
Input signal low threshold
VIN_HYS
Input signal hysteresis
VIN_H
Input signal high
threshold
VIN_L
Input signal low threshold
VIN_HYS
Input signal hysteresis
VDD = 4.5 V
31
%VDD
39
16
55
VDD = 12 V
31
59
%VDD
39
16
55
VDD = 18 V
35
58
%VDD
38
17
ENABLE (EN)
VEN_H
Enable signal high
threshold
VEN_L
Enable signal low
threshold
VEN_HYS
Enable hysteresis
2.1
VDD = 12 V
1
2.3
V
1.25
0.86
SOURCE AND SINK CURRENT
ISRC/SNK
Source/sink peak
current (1)
CLOAD = 0.22 µF, FSW = 1 kHz
±4
A
VDD = 12 V
IOUT = –10 mA
50
90
VDD = 4.5 V
IOUT = –10 mA
60
130
VDD = 12
IOUT = 10 mA
5
11
VDD = 4.5 V
IOUT = 10 mA
6
12
VDD = 12 V
IOUT = –10 mA
5
7.5
VDD = 4.5 V
IOUT = –10 mA
5.0
11
OUTPUTS (OUT)
VDD–VOH High output voltage
VOL
ROH
(1)
(2)
6
Low output voltage
Output pullup
resistance (2)
mV
mV
Ω
Ensured by design.
ROH represents on-resistance of P-channel MOSFET in pullup structure of the output stage of the UCC27518A-Q1 and UCC27519A-Q1
device.
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Electrical Characteristics (continued)
VDD = 12 V, TA = –40°C to 140°C, 1-µF capacitor from VDD to GND. Currents are positive into, negative out of the specified
terminal.
PARAMETER
ROL
Output pulldown
resistance
TYP
MAX
VDD = 12 V
IOUT = 10 mA
TEST CONDITIONS
MIN
0.5
1
VDD = 4.5 V
IOUT = 10 mA
0.6
1.2
UNIT
Ω
8.6 Switching Characteristics
VDD = 12 V, TA = –40°C to 140°C, 1-µF capacitor from VDD to GND. Currents are positive into, negative out of the specified
terminal. Over operating free-air temperature range (unless otherwise noted). See the timing diagrams in Figure 1, Figure 2,
Figure 3, and Figure 4.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tR
Rise time
CLOAD = 1.8 nF
8
12
ns
tF
Fall time
CLOAD = 1.8 nF
7
11
ns
tD1
IN+ to output propagation delay
VDD = 10 V
7-V input pulse, CLOAD = 1.8 nF
6
17
25
ns
tD2
IN– to output propagation delay
VDD = 10 V
7-V input pulse, CLOAD = 1.8 nF
6
17
24
ns
tD3
EN to output high propagation delay
CLOAD = 1.8 nF, 5-V enable pulse
4
12
16
ns
tD4
EN to output low propagation delay
CLOAD = 1.8 nF, 5-V enable pulse
4
12
19
ns
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High
Input
Low
High
Enable
Low
90%
Output
10%
tD1
tD1
UDG-11219
Figure 1. Noninverting Configuration
(IN+ Pin, UCC27519A-Q1)
High
Input
Low
High
Enable
Low
90%
Output
10%
tD2
tD2
UDG-11220
Figure 2. Inverting Configuration
(IN– Pin, UCC27518A-Q1)
8
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High
Input
Low
High
Enable
Low
90%
Output
10%
tD3
tD4
UDG-11217
Figure 3. Enable and Disable Function
(Noninverting Configuration, UCC27519A-Q1)
High
Input
Low
High
Enable
Low
90%
Output
10%
tD3
tD4
UDG-11218
Figure 4. Enable and Disable Function
(Inverting Configuration, UCC27518A-Q1)
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8.7 Typical Characteristics
0.12
3.5
0.1
IDD (mA)
Startup Current (mA)
0.11
4
IN+=Low,IN−=Low
IN+=High, IN−=Low
0.09
0.08
0.07
VDD = 3.4 V
0
50
Temperature (°C)
100
2
−50
150
100
150
G013
4.6
IN+=Low,IN−=Low
IN+=High, IN−=Low
UVLO Rising
UVLO Falling
4.4
0.4
UVLO Threshold (V)
Operating Supply Current (mA)
50
Temperature (°C)
Figure 6. Operating Supply Current vs Temperature (Output
Switching)
0.5
0.3
0.2
4.2
4
3.8
VDD = 12 V
0.1
−50
0
50
Temperature (°C)
100
3.6
−50
150
50
Temperature (°C)
100
150
G003
Figure 8. UVLO Threshold Voltage vs Temperature
70
8
VDD = 12V
RoH
Output Pull−Up Resistance (Ω)
Turn−On
Turn−Off
50
30
−50
0
G002
Figure 7. Supply Current vs Temperature (Output in DC
On/Off condition)
Input Threshold Voltage / VDD (%)
0
G001
Figure 5. Start-Up Current vs Temperature
0
50
Temperature (°C)
100
Figure 9. Input Threshold vs Temperature
10
VDD = 12 V
CLoad = 500 pF
fsw = 500 kHz
2.5
0.06
0.05
−50
3
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150
7
6
5
4
−50
VDD = 12 V
Iout = 10 mA
0
G001
50
Temperature (°C)
100
150
G004
Figure 10. Output Pullup Resistance vs Temperature
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Typical Characteristics (continued)
1
8
VDD = 12 V
CLoad = 1.8 nF
0.8
7
Rise Time (ns)
Pull−Down Resistance (Ω)
ROL
0.6
0.4
6
5
0.2
−50
0
50
Temperature (°C)
100
4
−50
150
Figure 11. Output Pulldown Resistance vs Temperature
100
150
G000
20
VDD = 12 V
CLoad = 1.8 nF
Propagation Delay (ns)
8
7
6
−50
0
50
Temperature (°C)
100
VDD = 10V
Turn−On
Turn−Off
9
Fall Time (ns)
50
Temperature (°C)
Figure 12. Rise Time vs Temperature
10
18
16
14
−50
150
0
G000
Figure 13. Fall Time vs Temperature
50
Temperature (°C)
100
150
G002
Figure 14. Input To Output Propagation Delay vs
Temperature
20
20
VDD=4.5V
VDD=12V
VDD=15V
18
16
14
Rise Time (ns)
Supply Current (mA)
0
G000
12
10
8
6
15
10
4
CLoad = 1.8 nF
2
0
0
100
200
300
400
Frequency (kHz)
500
600
700
5
0
4
G010
Figure 15. Operating Supply Current vs Frequency
8
12
Supply Voltage (V)
16
20
G008
Figure 16. Rise Time vs Supply Voltage
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Typical Characteristics (continued)
10
Fall Time (ns)
8
6
4
2
0
4
8
12
Supply Voltage (V)
16
20
G009
Figure 17. Fall Time vs Supply Voltage
12
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9 Detailed Description
9.1 Overview
The UCC2751xA-Q1 single-channel, high-speed, low-side gate-driver device is capable of effectively driving
MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, the
UCC2751x device is capable of sourcing and sinking high peak-current pulses into capacitive loads offering railto-rail drive capability and extremely small propagation delay of 13 ns (typical).
The UCC2751xA-Q1 family of devices provides 4-A source, 4-A sink (symmetrical drive) peak-drive current
capability. The device is designed to operate over a wide VDD range of 4.5 to 18 V, and a wide temperature
range of –40°C to +140°C. Internal undervoltage lockout (UVLO) circuitry on the VDD pin holds the output low
outside VDD operating range. The capability to operate at low voltage levels, such as below 5 V, along with bestin-class switching characteristics, is especially suited for driving emerging wide bandgap power-switching devices
such as GaN power-semiconductor devices.
The UCC27518A-Q1 device follows an inverting logic between the input and output, while the UCC27519A-Q1
device follows noninverting logic. The input pins of the devices are based on CMOS input-threshold logic. In
CMOS input logic, the threshold voltage level is a function of the bias voltage on the VDD pin of the device. This
feature offers the benefits of higher noise immunity due to the higher threshold voltage (compared to logic level
input thresholds), as well as the ability to accept slow dV/dt input signals for manipulating the propagation delay
between the PWM controller signal and the gate driver output. For system robustness, internal pullup and
pulldown resistors on the input pins ensure that outputs are held low when the input pins are in floating condition.
Table 2. UCC2751x Family of Features and Benefits
FEATURE
BENEFIT
High Source, Sink Current Capability
4 A, 4 A (Symmetrical)
High current capability offers flexibility in employing UCC2751x
family of devices to drive a variety of power switching devices at
varying speeds
Best-in-class 13-ns (typ) Propagation delay
Extremely low pulse transmission distortion
Expanded VDD Operating range of 4.5 V to 18 V
Flexibility in system design
Low VDD operation ensures compatibility with emerging wide
bandgap power devices such as GaN
Expanded Operating Temperature range of –40°C to 140°C
(See Electrical Characteristics table)
VDD UVLO Protection
Outputs are held low in UVLO condition, which ensures predictable,
glitch-free operation at power-up and power-down
Outputs held low when input pins (INx) in floating condition
Protection feature, especially useful in passing abnormal condition
tests during certification
Ability of input pins (and enable pin in UCC27518A-Q1 and
UCC27519A-Q1) to handle voltage levels not restricted by VDD pin
bias voltage
System simplification, especially related to auxiliary bias supply
architecture
Negative voltage handling capability on input pins of UCC2751xA
and UCC2751xA-Q1 devices
Enhanced robustness when long traces are present between PWM
controller and the gate driver
CMOS input threshold logic in UCC27518A-Q1 and UCC27519A-Q1
(VIN_H – 70% VDD, VIN_L – 30% VDD)
Well suited for slow input voltage signals, with flexibility to program
delay circuits (RCD)
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9.2 Functional Block Diagram
VDD
UCC27518A-Q1
200 kΩ
EN
VDD
1
VDD
5
VDD
4
OUT
VDD
200 kΩ
IN-
3
VDD
GND
2
UVLO
Figure 18. UCC27518A-Q1 Functional Block Diagram
VDD
UCC27519A-Q1
200 kΩ
EN
VDD
1
5
VDD
4
OUT
VDD
IN+
3
230 kΩ
GND
2
VDD
UVLO
Figure 19. UCC27519A-Q1 Functional Block Diagram
9.3 Feature Description
9.3.1 VDD and Undervoltage Lockout
The UCC2751x family of devices has internal undervoltage lockout (UVLO) protection feature on the VDD pin
supply-circuit blocks. Whenever the driver is in UVLO condition (such as when VDD voltage less than VON during
power up and when VDD voltage is less than VOFF during power down), this circuit holds all outputs LOW,
regardless of the status of the inputs. The UVLO is typically 4.2 V with 300-mV typical hysteresis. This hysteresis
helps prevent chatter when low VDD supply voltages have noise from the power supply and also when droops in
the VDD bias voltage occur when the system commences switching and when a sudden increase in IDD occurs.
The capability to operate at low voltage levels such as below 5 V, along with best-in-class switching
characteristics, is especially suited for driving emerging GaN wide bandgap power semiconductor devices.
For example, at power up, the UCC2751x driver output remains LOW until the VDD voltage reaches the UVLO
threshold. The magnitude of the OUT signal rises with VDD until steady-state VDD is reached. In the noninverting
device (PWM signal applied to IN+ pin) shown in Figure 20, the output remains LOW until the UVLO threshold is
reached, and then the output is in-phase with the input. In the inverting device (PWM signal applied to IN– pin)
shown in Figure 21, the output remains LOW until the UVLO threshold is reached, and then the output is outphase with the input.
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Feature Description (continued)
Because the driver draws current from the VDD pin to bias all internal circuits, for the best high-speed circuit
performance, two VDD bypass capacitors are recommended to prevent noise problems. The use of surface
mount components is highly recommended. A 0.1-μF ceramic capacitor should be located as close as possible to
the VDD to GND pins of the gate driver. In addition, a larger capacitor (such as 1 μF) with relatively low ESR
should be connected in parallel and close proximity, to help deliver the high-current peaks required by the load.
The parallel combination of capacitors should present a low impedance characteristic for the expected current
levels and switching frequencies in the application.
VDD
VDD Threshold
VDD Threshold
IN+
IN -
IN+
IN-
OUT
OUT
Figure 20. Power-Up (Noninverting Drive)
Figure 21. Power-Up (Inverting Drive)
9.3.2 Operating Supply Current
The UCC2751xA-Q1 family of devices features very-low quiescent IDD currents. The typical operating supply
current in undervoltage lockout (UVLO) state and fully-on state (under static and switching conditions) are
summarized in Figure 5, Figure 6 and Figure 7. The IDD current when the device is fully on and outputs are in a
static state (DC high or DC low, refer Figure 7) represents lowest quiescent IDD current when all the internal logic
circuits of the device are fully operational. The total supply current is the sum of the quiescent IDD current, the
average IOUT current because of switching and finally any current related to pullup resistors on the unused input
pin. For example when the inverting input pin is pulled low additional current is drawn from VDD supply through
the pullup resistors (see the Functional Block Diagram section for the device block diagram). Knowing the
operating frequency (fSW) and the MOSFET gate (QG) charge at the drive voltage being used, the average IOUT
current can be calculated as product of QG and fSW.
A complete characterization of the IDD current as a function of switching frequency at different VDD bias
voltages under 1.8-nF switching load is provided in Figure 15. The strikingly linear variation and close correlation
with theoretical value of average IOUT indicates negligible shoot-through inside the gate-driver device attesting to
its high-speed characteristics.
9.3.3 Input Stage
The input pins of UCC2751xA-Q1 family of devices are based on CMOS input logic where the threshold voltage
level is a function of the bias voltage applied on the VDD pin. Typically, the Input high threshold (V_INH) is 55%
VDD and input low threshold (VIN_L) is 39% VDD. Hysteresis (typically 19% VDD), which is available on the
input threshold, offers noise immunity. With high VDD voltages resulting in wide hysteresis, slow dV/dt input
signals are acceptable in the INx pins and RC circuits can be inserted between the input PWM signal and the INx
pins of UCC2751xA-Q1 family of devices, to program a delay between the input signal and output transition.
The input pins have the ability to sustain negative voltages below the GND pin. This ability offers higher
robustness and makes the design simpler when long traces are present between the PWM controller output and
input of gate driver. An example of such a situation is when the controller is mounted on a daughter card and the
gate driver is on the power stage board, close to the power switches.
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Feature Description (continued)
9.3.4 Enable Function
The enable pin is based on a noninverting configuration (active high operation). When the EN pin is driven high
the output is enabled and when the EN pin is driven low the output is disabled. Unlike input pin, the enable pin
threshold is based on a TTL/CMOS-compatible input threshold logic that does not vary with the supply voltage.
Typically, the enable high threshold (V_ENH) is 2.1 V and enable low threshold (VEN_L) is 1.25 V. Thus the EN
pin can be effectively controlled using logic signals from 3.3-V and 5-V microcontrollers. The EN pin is internally
pulled up to VDD using pullup resistor as a result of which the output of the device is enabled in the default state.
Hence the EN pin can be left floating or not connected (NC) for standard operation, when enable feature is not
needed. Essentially, this allows the UCC2751xA-Q1 family devices to be pin-to-pin compatible with TI’s previous
generation drivers, the TPS2828-Q1 and TPS2829-Q1 device respectively, where pin number 1 is an NC pin.
The enable pin also has the ability to sustain negative voltages below the GND pin.
9.3.5 Output Stage
The UCC2751xA-Q1 family of devices is capable of delivering 4-A source, 4-A sink (symmetrical drive) at VDD =
12 V. The output stage of the UCC2751xA-Q1 family of devices are shown in Figure 22. The UCC2751xA-Q1
family of devices features a unique architecture on the output stage which delivers the highest peak source
current when it is most needed during the Miller plateau region of the power switch turn-on transition (when the
power switch drain or collector voltage experiences dV/dt). The device output stage features a hybrid pullup
structure using a parallel arrangement of N-channel and P-channel MOSFET devices. By turning on the Nchannel MOSFET during a narrow instant when the output changes state from low to high, the gate-driver device
is able to deliver a brief boost in the peak-sourcing current enabling fast turn on.
VCC
ROH
RNMOS, Pull Up
Input Signal Anti ShootThrough
Circuitry
Gate
Voltage
Boost
OUT
Narrow Pulse at
each Turn On
ROL
Figure 22. UCC2751xA-Q1 Gate Driver Output Structure
The ROH parameter (see the Electrical Characteristics table) is a DC measurement and is representative of the
on-resistance of the P-channel device only, because the N-channel device is turned on only during output
change of state from low to high. Thus the effective resistance of the hybrid pullup stage is much lower than what
is represented by ROH parameter. The pulldown structure is composed of a N-channel MOSFET only. The ROL
parameter (see the Electrical Characteristics table), which is also a DC measurement, is representative of true
impedance of the pulldown stage in the device. In the UCC2751xA-Q1 family of devices, the effective resistance
of the hybrid pullup structure is approximately 1.4 × ROL.
The driver output voltage swings between VDD and GND providing rail-to-rail operation, thanks to the MOS
output stage which delivers very low dropout. The presence of the MOSFET body diodes also offers low
impedance to switching overshoots and undershoots. This means that in many cases, external Schottky diode
clamps may be eliminated. The outputs of these drivers are designed to withstand 500-mA reverse current
without either damage to the device or logic malfunction.
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Feature Description (continued)
9.3.6 Low Propagation Delays
The UCC2751xA-Q1 driver device features best-in-class input-to-output propagation delay of 17 ns (typical) at
VDD = 12 V. This promises the lowest level of pulse transmission distortion available from industry standard gate
driver devices for high-frequency switching applications. As shown in Figure 14, there is very little variation of the
propagation delay with temperature and supply voltage as well, offering typically less than 20-ns propagation
delays across the entire range of application conditions.
9.4 Device Functional Modes
Table 3 lists the device logic for each device.
Table 3. Device Logic Table
EN
(1)
UCC27518A-Q1
UCC27519A-Q1
IN– PIN
OUT PIN
IN+ PIN
H
L
H
L
OUT PIN
L
H
H
L
H
H
L
Any
L
Any
L
Any
x (1)
L
x (1)
L
x (1)
L
H
L
L
x (1)
H
L
H
H
x = floating condition
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Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
High-current gate-driver devices are required in switching power applications for a variety of reasons. To effect
fast switching of power devices and reduce associated switching power losses, a powerful gate driver is
employed between the PWM output of controllers and the gates of the power semiconductor devices. Gate
drivers provide other uses such as minimizing the effect of high-frequency switching noise by locating the highcurrent driver physically close to the power switch, driving gate-drive transformers and controlling floating powerdevice gates, and reducing power dissipation and thermal stress in controllers by moving gate charge power
losses into itself. Finally, emerging wide-bandgap power device technologies, such as GaN-based switches,
which are capable of supporting very high switching frequency operation, are driving very special requirements in
terms of gate drive capability. These requirements include operation at low VDD voltages (5 V or lower), low
propagation delays, and availability in compact, low-inductance packages with good thermal capability. In
summary gate-driver devices are extremely important components in switching power combining benefits of highperformance, low cost, component count and board space reduction, and simplified system design.
10.2 Typical Application
UCC27518A-Q1
UCC27519A-Q1
EN
1
EN
VDD
4.5 V to 18 V
V+
5
C1
2
GND
3
IN+/IN-
Q1
R1
IN
OUT
4
Figure 23. Typical Application Diagram
10.2.1 Design Requirements
When selecting the proper gate-driver device for an end application, some design considerations must be
evaluated first to make the most appropriate selection. Table 4 lists these design considerations and example
values.
Table 4. Design Parameters
18
DESIGN PARAMETER
EXAMPLE VALUE
Input-to-output logic
Noninverting
Input threshold type
CMOS type
VDD bias supply voltage
10 V (minimum), 13 V (nominal), 15 V (peak)
Peak source and sink currents
Minimum 3-A source, minimum 3-A sink
Enable and disable function
Yes, required
Propagation delay
Maximum 40 ns or less
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10.2.2 Detailed Design Procedure
10.2.2.1 Input-to-Output Logic
The design must specify which type of input-to-output configuration should be used. If turning on the power
MOSFET or IGBT when the input signal is in high state is preferred, then the noninverting configuration must be
selected. If turning off the power MOSFET or IGBT when the input signal is in high state is preferred, the
inverting configuration must be selected. The UCC2751xA-Q1 family of devices follow inverting and noninverting
logic, respectively.
10.2.2.2 Input Threshold Type
The type of input voltage threshold determines the type of controller used with the gate driver device. The
UCC2751xA-Q1 family of devices feature CMOS input-threshold logic with wide hysteresis. In CMOS inputthreshold logic, the threshold voltage level is a function of the bias voltage on the VDD pin of the device. The
typical high threshold is 55% of the VDD supply voltage, and the typical low threshold is 39% of the VDD supply
voltage at VDD= 12 V. Built-in hysteresis is included which is typically 16% of VDD supply voltage. See the table
for the specified input-threshold voltage levels and hysteresis specifications for the UCC2751xA-Q1 family of
devices at different VDD bias levels.
In most applications, the absolute value of the threshold voltage offered by the CMOS logic is higher (for
example, VINH = 5.5 V if VDD = 10 V) than what is offered by logic-level threshold devices. This higher threshold
voltage offers the following benefits:
• Better noise immunity because of the higher threshold level desirable in high power systems.
• Ability to accept slow dV/dt input signals, which allows designers to use RCD circuits on the input pin to
program propagation delays in the application, as shown in Figure 24.
D
PWM Input
VH
R del
INx
OUTx
VL
C del
PWM Input Signal
VIN
Driver Output
Figure 24. Using RCD Circuits
æ VL - VIN _ H
ö
t del = -RdelCdel ´ In ç
+ 1÷
ç V -V
÷
H
L
è
ø
(1)
As a result of the CMOS input logic, the UCC2751xA-Q1 family of devices cannot be driven directly by logic-level
control signals from microcontrollers, digital power controllers, or DSPs. The UUCC2751xA-Q1 family of devices
is ideally suited for being driven by analog controllers driven by the same VDD voltage as the gate driver devices.
10.2.2.3 VDD Bias Supply Voltage
The bias supply voltage to be applied to the VDD pin of the device should never exceed the values listed in the
table. However, different power switches demand different voltage levels to be applied at the gate terminals for
effective turn on and turnoff. With certain power switches, a positive gate voltage may be required for turn on,
and a negative gate voltage may be required for turnoff, in which case the VDD bias supply equals the voltage
differential. With a wide operating range from 4.5 V to 18 V, the UCC2751xA-Q1 family of devices can be used to
drive a variety of power switches, such as Si MOSFETs (for example, VGS = 4.5 V, 10 V, 12 V), IGBTs (VGE = 15
V, 18 V), and wide-bandgap power semiconductors (such as GaN, certain types of which allow no higher than 6
V to be applied to the gate terminals).
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10.2.2.4 Peak Source and Sink Currents
Generally, the switching speed of the power switch during turnon and turnoff should be as fast as possible to
minimize switching power losses. The gate driver device must be able to provide the required peak current for
achieving the targeted switching speeds for the targeted power MOSFET. Using the example of a power
MOSFET, the system requirement for the switching speed is typically described in terms of the slew rate of the
drain-to-source voltage of the power MOSFET (such as dVDS/dt).
For example, the system requirement might state that a SPP20N60C3 power MOSFET must be turned-on with a
dVDS/dt of 20 V/ns or higher under a DC bus voltage of 400 V in a continuous-conduction-mode (CCM) boost
PFC-converter application. This type of application is an inductive, hard-switching application, and reducing
switching power losses is critical. This requirement means that the entire drain-to-source voltage swing during
power MOSFET turnon event (from 400 V in the OFF state to VDS(on) in on state) must be completed in
approximately 20 ns or less.
When the drain-to-source voltage swing occurs, the Miller charge of the power MOSFET (QGD parameter in
SPP20N60C3 power MOSFET data sheet = 33 nC typical) is supplied by the peak current of gate driver.
According to the power MOSFET inductive switching mechanism, the gate-to-source voltage of the power
MOSFET at this time is the Miller plateau voltage, which is typically a few volts higher than the threshold voltage
of the power MOSFET, VGS(TH). To achieve the targeted dVDS/dt, the gate driver must be capable of providing the
QGD charge in 20 ns or less. In other words, a peak current of 1.65 A (= 33 nC / 20 ns) or higher must be
provided by the gate driver. The UCC2751xA-Q1 gate driver is capable of providing 4-A peak sourcing current,
which exceeds the design requirement and has the capability to meet the necessary switching speed.
The 2.4x overdrive capability provides an extra margin against part-to-part variations in the QGD parameter of
the power MOSFET, along with additional flexibility to insert external gate resistors and fine tune the switching
speed for efficiency versus EMI optimizations. However, in practical designs the parasitic trace inductance in the
gate drive circuit of the PCB will have a definitive role to play on the power MOSFET switching speed. The effect
of this trace inductance is to limit the dI/dt of the output current pulse of the gate driver.
To illustrate this, consider the output current pulse waveform from the gate driver to be approximated to a
triangular profile, where the area under the triangle (½ × IPEAK × time) would equal the total gate charge of the
power MOSFET (QG parameter in SPP20N60C3 power MOSFET datasheet = 87 nC typical). If the parasitic
trace inductance limits the dI/dt, the full peak current capability of the gate driver may not be fully achieved in the
time required to deliver the QG required for the power MOSFET switching. In other words, the time parameter in
the equation would dominate and the IPEAK value of the current pulse would be much less than the true peak
current capability of the device, while the required QG is still delivered. Because of this, the desired switching
speed may not be realized, even when theoretical calculations indicate the gate driver is capable of achieving the
targeted switching speed. Thus, place the gate driver device very close to the power MOSFET and design a tight
gate drive-loop with minimal PCB trace inductance to realize the full peak-current capability of the gate driver.
10.2.2.5 Enable and Disable Function
Certain applications demand independent control of the output state of the driver without involving the input
signal. The UCC2751xA-Q1 family of devices include the enable pin (EN), which achieves this.
10.2.2.6 Propagation Delay
The acceptable propagation delay from the gate driver is dependent on the switching frequency at which it is
used, and the acceptable level of pulse distortion to the system. The UCC2751xA-Q1 family of devices feature
industry best-in-class 17-ns (typical) propagation delays, which ensure very little pulse distortion and allow
operation at very high-frequencies. See the table for the propagation and switching characteristics of the
UCC2751xA-Q1 family of devices.
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10.2.3 Application Curve
Input Threshold Voltage / VDD (%)
70
VDD = 12V
Turn−On
Turn−Off
50
30
−50
0
50
Temperature (°C)
100
150
G001
Figure 25. Input Threshold vs Temperature
11 Power Supply Recommendations
The bias supply voltage range for which the UCC2751xA-Q1 family of devices is rated to operate is from 4.5 V to
18 V. The lower end of this range is governed by the internal under voltage-lockout (UVLO) protection feature on
the VDD pin supply circuit blocks. Whenever the driver is in UVLO condition with the VDD pin voltage below the
V(ON) supply start threshold, this feature holds the output low, regardless of the status of the inputs. The upper
end of this range is driven by the 20-V absolute maximum voltage rating of the VDD pin of the device (which is a
stress rating). Maintaining a 2-V margin to allow for transient voltage spikes, the maximum recommended voltage
for the VDD pin is 18 V.
The UVLO protection feature also involves a hysteresis function. When the VDD pin bias voltage has exceeded
the threshold voltage and the device begins to operate, if the voltage drops, the device continues to deliver
normal functionality unless the voltage drop exceeds the hysteresis specification VDD(hys). While operating at or
near the 4.5 V range, ensure that the voltage ripple on the auxiliary power supply output is smaller than the
hysteresis specification of the device to avoid triggering device shutdown.
During system shutdown, the device operation continues until the VDD pin voltage has dropped below the V(OFF)
threshold, which must be accounted for while evaluating system shutdown timing design requirements. Likewise,
at system startup the device does not begin operation until the VDD pin voltage has exceeded above the V(ON)
threshold. The quiescent current consumed by the internal circuit blocks of the device is supplied through the
VDD pin. The charge for source current pulses delivered by the OUT pin is also supplied through the same VDD
pin. As a result, every time a current is sourced out of the output pin (OUT), a corresponding current pulse is
delivered into the device through the VDD pin. Therefore, ensure that local bypass capacitors are provided
between the VDD and GND pins and located as close to the device as possible, for the purpose of decoupling. A
low ESR, ceramic surface mount capacitor is necessary. TI recommends to have 2 capacitors; a 100-nF ceramic
surface-mount capacitor which can be nudged very close to the pins of the device, and another surface-mount
capacitor of few microfarads added in parallel.
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12 Layout
12.1 Layout Guidelines
Proper PCB layout is extremely important in a high-current, fast-switching circuit to provide appropriate device
operation and design robustness. The UCC2751xA-Q1 gate driver incorporates short-propagation delays and
powerful output stages capable of delivering large current peaks with very fast rise and fall times at the gate of
power switch to facilitate voltage transitions very quickly. At higher VDD voltages, the peak-current capability is
even higher (4-A, 4-A peak current is at VDD = 12 V). Very high di/dt can cause unacceptable ringing if the trace
lengths and impedances are not well controlled. The following circuit layout guidelines are strongly recommended
when designing with these high-speed drivers.
• Locate the driver device as close as possible to power device to minimize the length of high-current traces
between the output pins and the gate of the power device.
• Locate the VDD bypass capacitors between VDD and GND as close as possible to the driver with minimal
trace length to improve the noise filtering. These capacitors support high-peak current being drawn from VDD
during turnon of power MOSFET. The use of low inductance SMD components such as chip resistors and
chip capacitors is highly recommended.
• The turn-on and turn-off current loop paths (driver device, power MOSFET and VDD bypass capacitor) should
be minimized as much as possible to keep the stray inductance to a minimum. High dI/dt is established in
these loops at two instances—during turnon and turnoff transients, which will induce significant voltage
transients on the output pin of the driver device and gate of the power switch.
• Wherever possible parallel the source and return traces, taking advantage of flux cancellation.
• Separate power traces and signal traces, such as output and input signals.
• Star-point grounding is a good way to minimize noise coupling from one current loop to another. The GND of
the driver should be connected to the other circuit nodes such as source of power switch and ground of PWM
controller at one point. The connected paths should be as short as possible to reduce inductance and be as
wide as possible to reduce resistance.
• Use a ground plane to provide noise shielding. Fast rise and fall times at OUT may corrupt the input signals
during transition. The ground plane must not be a conduction path for any current loop. Instead the ground
plane must be connected to the star-point with one single trace to establish the ground potential. In addition
to noise shielding, the ground plane can help in power dissipation as well.
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12.2 Layout Example
Figure 26. Layout Example
12.3 Thermal Consideration
The useful range of a driver is greatly affected by the drive power requirements of the load and the thermal
characteristics of the package. For a gate driver to be useful over a particular temperature range the package
must allow for the efficient removal of the heat produced while keeping the junction temperature within rated
limits. The thermal metrics for the driver package are listed in the Thermal Information table. For detailed
information regarding the thermal information table, please refer to the Application Note from Texas Instruments
entitled Semiconductor and IC Package Thermal Metrics (SPRA953).
12.4 Power Dissipation
Power dissipation of the gate driver has two portions as shown in Equation 2:
PDISS = PDC + PSW
(2)
Use Equation 3 to calculate the DC portion of the power dissipation.
PDC = IQ × VDD
where
•
IQ is the quiescent current for the driver
(3)
The quiescent current is the current consumed by the device to bias all internal circuits such as input stage,
reference voltage, logic circuits, protections, and also any current associated with switching of internal devices
when the driver output changes state (such as charging and discharging of parasitic capacitances, parasitic
shoot-through). The UCC2751xA-Q1 family of devices features very low quiescent currents (less than 1 mA,
refer Figure 7) and contains internal logic to eliminate any shoot-through in the output driver stage. Thus the
effect of the PDC on the total power dissipation within the gate driver can be assumed to be negligible.
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Power Dissipation (continued)
The power dissipated in the gate-driver package during switching (PSW) depends on the following factors:
• Gate charge required of the power device (usually a function of the drive voltage VG, which is very close to
input bias supply voltage VDD because of low VOH drop-out).
• Switching frequency.
• Use of external gate resistors.
When a driver device is tested with a discrete, capacitive load it is a fairly simple matter to calculate the power
that is required from the bias supply. The energy that must be transferred from the bias supply to charge the
capacitor is given by Equation 4.
1
EG = CLOAD VDD2
2
where
•
•
CLOAD is load capacitor
VDD is bias voltage feeding the driver
(4)
There is an equal amount of energy dissipated when the capacitor is charged. This leads to a total power loss
given by Equation 5.
PG = CLOAD VDD2 fSW
where
•
fSW is the switching frequency
(5)
The switching load presented by a power MOSFET or IGBT can be converted to an equivalent capacitance by
examining the gate charge required to switch the device. This gate charge includes the effects of the input
capacitance plus the added charge needed to swing the drain voltage of the power device as it switches between
the ON and OFF states. Most manufacturers provide specifications of typical and maximum gate charge, in nC,
to switch the device under specified conditions. Using the gate charge QG, one can determine the power that
must be dissipated when charging a capacitor. This is done by using the equation, QG = CLOAD × VDD, to provide
the following equation for power:
PG = CLOAD VDD2 fSW = Qg VDD fSW
(6)
This power PG is dissipated in the resistive elements of the circuit when the MOSFET/IGBT is being turned on or
off. Half of the total power is dissipated when the load capacitor is charged during turnon, and the other half is
dissipated when the load capacitor is discharged during turnoff. When no external gate resistor is employed
between the driver and MOSFET or IGBT, this power is completely dissipated inside the driver package. With the
use of external gate-drive resistors, the power dissipation is shared between the internal resistance of driver and
external gate resistor in accordance to the ratio of the resistances (more power dissipated in the higher
resistance component). Based on this simplified analysis, the driver power dissipation during switching is
calculated as follows:
ROFF
RON
PSW = QG ´ VDD ´ fSW ´ (
+
)
(ROFF +RGATE ) (RON +RGATE )
where
•
•
24
ROFF = ROL
RON (effective resistance of pullup structure) = 1.4 × ROL
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(7)
Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: UCC27518A-Q1 UCC27519A-Q1
UCC27518A-Q1, UCC27519A-Q1
www.ti.com
SLVSC90B – AUGUST 2013 – REVISED AUGUST 2015
13 Device and Documentation Support
13.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 5. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
UCC27518A-Q1
Click here
Click here
Click here
Click here
Click here
UCC27519A-Q1
Click here
Click here
Click here
Click here
Click here
13.2 Community Resource
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
13.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
13.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
13.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: UCC27518A-Q1 UCC27519A-Q1
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25
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
UCC27518AQDBVRQ1
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
EAFQ
UCC27519AQDBVRQ1
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
519Q
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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