BC446B

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package General Purpose High Voltage Transistors. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN VCEO Collector Emitter Voltage 60 VCBO Collector Base Voltage 60 Emitter Base Voltage Collector Current Continuous Total Device Dissipation@ Ta=25ºC Derate Above 25ºC Total Device Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case Rth(j-a) Rth(j-c) 200 83.3 ºC/W ºC/W VEBO IC PD PD Tj, Tstg 5 300 625 5 1.5 12 -55 to +150 TYP 80 80 5 MAX 100 100 5 UNITS V V V mA mW mW/ ºC W mW/ ºC ºC Continental Device India Limited Data Sheet Page 1 of 4 SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN BVCEO * IC=1mA,IB=0 Collector Emitter BreakdownVoltage BC446 60 BC448 80 BC450 100 BVCBO IC=100uA, IE =0 Collector Base Breakdown Voltage BC446 60 BC448 80 BC450 100 BVEBO IE=10uA, IC=0 5 Emitter Base Breakdown Voltage ICBO Collector-Cut off Current BC446 BC448 BC450 DC Current Gain NON SUFFIX A B NON SUFFIX A B NON SUFFIX A B Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter On Voltage VCE(sat) IC=100mA,IB=10mA VBE(sat) VBE(on) IC=100mA,IB=10mA IC=2mA,VCE =5V IC=100mA,VCE =5V* hFE* IC=2mA,VCE=5V 50 120 180 50 100 160 50 60 90 VCB =40V, IE =0 VCB =60V, IE =0 VCB =80V, IE =0 TYP MAX UNITS V V V V V V V 100 100 100 nA nA nA 460 220 460 IC=2mA,VCE=5V IC=100mA,VCE=5V 0.25 0.85 0.55 0.70 1.2 V V V V DYNAMICS CHARACTERISTICS Transition Frequency fT IC=50mA, VCE=5V f=100MHz Pulse Test : Pulse width < 300µs, Duty Cycle