CMBD4148

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBD1201, CMBD1202, CMBD1203 CMBD1204, CMBD1205, CMBD4148 SILICON PLANAR EPITAXIAL HIGH SPEED DIODES CMBD1201, 1202, CMBD4148 are all single diodes CMBD1203 is a dual diode, in series CMBD1204 is a dual diode, common cathode CMBD1205 is a dual diode, common anode Marking CMBD1201 – 24 CMBD1202 – 25 CMBD1203 – 26 2 1 CMBD1204 – 27 CMBD1205 – 28 CMBD4148 – 5H PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m CMBD1201 3 CMBD4148 1 2 CMBD1202 3 2 1 CMBD1203 3 2 1 CMBD1204 3 2 1 CMBD1205 3 ABSOLUTE MAXIMUM RATINGS (per diode) Continuous reverse voltage Repetitive peak reverse voltage Repetitive peak forward current Forward current Junction temperature Forward voltage at IF = 10 mA VR VRRM IFRM IF Tj VF max. 75 max. 100 max. 500 max. 215 max. 150 < 0.855 V V mA mA °C V Continental Device India Limited Data Sheet Page 1 of 3 CMBD1201, CMBD1202, CMBD1203 CMBD1204, CMBD1205, CMBD4148 Reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA RATINGS (per diode) (at TA = 25°C unless otherwise Limiting values Continuous reverse voltage Repetitive peak reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current (per crystal) t = 1 µs t = 1 ms t=1s Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient CHARACTERISTICS (per diode) Tj = 25 °C unless otherwise specified Forward voltage IF = 10 mA IF = 200 mA CMBD4148 IF = 10 mA Reverse currents VR = 20 V VR = 75 V VR = 25 V; Tj = 150 °C Forward recovery voltage IF = 10 mA; tp = 20 ns Recovery charge IF = 10 mA to VR = 5V; R = 100 Ω Diode capacitance VR = 0; f = 1 MHz Reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA trr specified) VR VRRM IFRM IF IFSM IFSM IFSM Tstg Tj < 4 ns max. max. max. max. 75 100 500 215 V V mA mA max. 4A max. 1.0 A max. 0.5 A –55 to +150 ° C max. 150 ° C Rth j–a = 500 K/W VF VF VF IR IR IR Vfr Qs Cd < < < < < < < < < 0.855 V 1.05 V 1.0 V 25 nA 5 µA 30 µA 1 .75 V 45 pC 2 pF trr < 4 ns Continental Device India Limited Data Sheet Page 2 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 mail@cdil.com www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3 CDIL is a registered Trademark of