2N2102
2N2102A
SILICON
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2102,A is a
silicon NPN epitaxial planar transistor designed for high
current general purpose switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage
VCBO 120 V
Collector-Emitter Voltage
VCER 80 V
Collector-Emitter Voltage
VCEO 65
V
Emitter-Base Voltage
VEBO 7.0
V
Continuous Collector Current
IC 1.0 A
Power Dissipation (TC=25°C) PD 5.0 W
Power Dissipation
PD 1.0 W
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
TJ, Tstg
-65 to +200
°C
ΘJA 175 °C/W
ΘJC 35 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO VCB=60V 2.0
nA
ICBO VCB=60V, TA=150°C
2.0
μA
IEBO VEB=5.0V 2.0
nA
BVCBO IC=100µA
120 V
BVCER IC=100mA, RBE=10Ω 80 V
BVCEO IC=100mA
65 V
BVEBO IE=100µA
7.0 V
VCE(SAT) IC=150mA, IB=15mA (2N2102)
0.5
V
VCE(SAT) IC=150mA, IB=15mA (2N2102A)
0.3
V
VBE(SAT) IC=150mA, IB=15mA 1.1 V
hFE VCE=10V, IC=10μA 10
hFE VCE=10V, IC=100μA 20
hFE VCE=10V, IC=10mA 35
hFE VCE=10V, IC=10mA, TA=-55°C 20
hFE VCE=10V, IC=150mA 40 200
hFE VCE=10V, IC=500mA 25
R0 (19-October 2022)
2N2102
2N2102A
SILICON
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
hFE VCE=10V, IC=1.0A 10
hfe VCE=5.0V, IC=1.0mA, f=1.0kHz
30
100
hfe VCE=10V, IC=5.0mA, f=1.0kHz
35
hib VCE=5.0V, IC=1.0mA, f=1.0kHz
24
34
Ω
hib VCE=10V, IC=5.0mA, f=1.0kHz
4.0
hrb VCE=5.0V, IC=1.0mA, f=1.0kHz
8.0
Ω
3x10-4
hrb VCE=10V, IC=5.0mA, f=1.0kHz
hob VCE=5.0V, IC=1.0mA, f=1.0kHz
0.08
0.5
hob VCE=10V,
fT VCE=10V,
IC=5.0mA, f=1.0kHz
IC=50mA, f=20MHz
0.08
150
3x10-4
1.0
60
μS
μS
MHz
Cob VCB=10V, IE=0, f=100kHz
15
Cib VEB=0.5V, IC=0, f=100kHz
80
pF
pF
NF VCE=10V, IC=300μA, f=1.0kHz
6.0
dB
R0 (19-October 2022)
w w w. c e n t r a l s e m i . c o m
2N2102
2N2102A
SILICON
NPN TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R0 (19-October 2022)
w w w. c e n t r a l s e m i . c o m
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PRODUCT SUPPORT
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Central’s applications engineering team is ready to discuss your design challenges. Just ask.
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• Special wafer diffusions
• Online technical data and parametric search
• PbSn plating options
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• Customer specific screening
• Custom product and package development
• Up-screening capabilities
REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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Hauppauge, NY 11788 USA
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www.centralsemi.com
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