CMXD2004_10

CMXD2004 SURFACE MOUNT TRIPLE ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004 type contains three (3) Isolated High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for applications requiring high voltage capability. MARKING CODE: X04 SOT-26 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Average Forward Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IO IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 240 300 200 225 625 4.0 1.0 350 -65 to +150 357 UNITS V V mA mA mA A A mW °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR IR BVR VF CT trr VR=240V VR=240V, TA=150°C IR=100μA IF=100mA VR=0, f=1.0MHz IF=IR=30mA, Irr=3.0mA, RL=100Ω 300 1.0 5.0 50 100 100 UNIT nA μA V V pF ns R4 (9-February 2010) CMXD2004 SURFACE MOUNT TRIPLE ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES SOT-26 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D2 3) Anode D3 4) Cathode D3 5) Cathode D2 6) Cathode D1 MARKING CODE: X04 R4 (9-February 2010) w w w. c e n t r a l s e m i . c o m