CXDM6053NTR

CXDM6053N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXDM6053N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. MARKING: FULL PART NUMBER SOT-89 CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment FEATURES: • Low rDS(ON) (52mΩ MAX @ VGS=4.5V) • High current (ID=5.3A) • Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=60V, VGS=0 BVDSS VGS=0, ID=250μA VGS(th) VGS=VDS, ID=250μA VSD VGS=0, IS=2.0A rDS(ON) VGS=10V, ID=5.3A rDS(ON) VGS=4.5V, ID=4.7A Qg(tot) VDS=30V, VGS=5.0V, ID=5.3A Qgs VDS=30V, VGS=5.0V, ID=5.3A Qgd VDS=30V, VGS=5.0V, ID=5.3A Crss VDS=30V, VGS=0, f=1.0MHz Ciss VDS=30V, VGS=0, f=1.0MHz Coss VDS=30V, VGS=0, f=1.0MHz ton VDD=30V, VGS=4.5V, ID=4.4A RG=1.0Ω, RL=6.8Ω toff VDD=30V, VGS=4.5V, ID=4.4A RG=1.0Ω, RL=6.8Ω 60 20 5.3 30 1.2 -55 to +150 104 otherwise noted) MIN TYP 60 1.0 1.3 30 33 8.8 MAX 100 1.0 3.0 1.2 41 52 UNITS V V A A W °C °C/W UNITS nA μA V V V mΩ mΩ nC 1.9 3.6 53 920 49 nC nC pF pF pF 33 ns 42 ns R1 (9-August 2012) CXDM6053N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-89 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate 2) Drain 3) Source MARKING: FULL PART NUMBER R1 (9-August 2012) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)