CEP02N6/CEB02N6 CEI02N6/CEF02N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP02N6 CEB02N6 CEI02N6 CEF02N6 VDSS 600V 600V 600V 600V RDS(ON) 5Ω 5Ω 5Ω 5Ω ID 2A 2A 2A 2A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
G D S
CEI SERIES TO-262(I2-PAK)
S CEB SERIES TO-263(DD-PAK)
G
G D S
CEP SERIES TO-220
G
D S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAR EAR TJ,Tstg
f
TO-220F
Units V V
600
±30
2 6 60 0.48 125 2 5.4 -55 to 150 2 6
e e
A A W W/ C mJ A mJ C
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Repetitive Avalanche Current a Repetitive Avalanche Energy
a
29 0.23 125 2 5.4
Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 2.1 62.5 Limit 4.3 65 Units C/W C/W
2002.September 4-2
http://www.cetsemi.com
CEP02N6/CEB02N6 CEI02N6/CEF02N6
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
b c
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS g VSD VGS = 0V, IS = 2A h VDS = 480V, ID = 2A, VGS = 10V VDD = 300V, ID = 2A, VGS = 10V, RGEN = 18Ω Test Condition VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 1A VDS = 50V, ID = 1A 2 3.8 1.2 250 50 30 18 18 50 16 20 2 12 2 1.5 35 35 90 40 25 Min 600 25 100 -100 4 5.0 Typ Max Units V
µA
4
nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A V
VDS = 25V, VGS = 0V, f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L =60mH, IAS =2.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 1.5A . h.Full package VSD test condition IS = 1.5A .
4-3
CEP02N6/CEB02N6 CEI02N6/CEF02N6
3.0 VGS=10,9,8,7V 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 12
ID, Drain Current (A)
ID, Drain Current (A)
VGS=6V
TJ=150 C 10
0
VGS=5V
-55 C 25 C 10
-1
1.VDS=40V 2.Pulse Test 4 6 8 10
2
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
600 500 400 300 200 100 0 0 5 Coss Crss 10 15 20 25 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=1A VGS=10V
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature
1
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=250µA
IS, Source-drain current (A)
10
VGS=0V
10
0
10 -25 0 25 50 75 100 125 150
-1
0.4
0.6
0.8
1.0
1.2
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
4-4
CEP02N6/CEB02N6 CEI02N6/CEF02N6
VGS, Gate to Source Voltage (V)
15 VDS=480V ID=2A 10
1
10µs
ID, Drain Current (A)
12
RDS(ON)Limit 10
0
4
1ms 10ms DC
9
6
10
-1
3
0 0 6 12 18 24
10
-2
TC=25 C TJ=150 C Single Pulse 10
0
10
1
10
2
10
3
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5 0.2 0.1
10
-1
PDM 0.05 0.02 0.01 t1 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2
10
-2
Single Pulse
-5
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4-5