CEP21A2

CEP21A2/CEB21A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 25A,RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20 Units V V A A W W/ C C ±12 25 75 43 0.29 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.5 62.5 Units C/W C/W 2003.July 4 - 66 http://www.cetsemi.com CEP21A2/CEB21A2 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 4A VDS = 10V, ID =8A, VGS = 4.5V VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6Ω 20 12 50 10 11 3.6 2.8 25 1.3 50 30 100 25 15 ns ns ns ns nC nC nC A V c Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.5V, ID = 8A VGS = 2.5V, ID = 6.6A VDS = 10V, ID = 8A 0.5 30 55 15 511 216 73 Min 20 1 100 -100 1.5 40 70 Typ Max Units V µA 4 nA nA V mΩ mΩ S pF pF pF VDS = 15V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 4 - 67 CEP21A2/CEB21A2 30 25 20 15 10 5 0 0 1 2 3 4 VGS=1.5 VGS=4.5,3.5,3.0V 15 VGS=2.5 25 C ID, Drain Current (A) ID, Drain Current (A) 12 9 VGS=2.0 6 3 TJ=125 C 0 0.5 1.0 1.5 -55 C 2.0 2.5 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 900 750 600 450 300 Coss 150 0 0 5 10 15 20 25 Crss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics Ciss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=8A VGS=4.5V C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 10 2 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=250µA IS, Source-drain current (A) 25 50 75 100 125 150 10 1 10 -25 0 0 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 4 - 68 CEP21A2/CEB21A2 VGS, Gate to Source Voltage (V) 5 VDS=10V ID=8A 10 2 RDS(ON)Limit ID, Drain Current (A) 4 10 1 3 100µs 1ms 10ms 100ms DC 4 2 10 0 1 0 0 3 6 9 12 10 -1 TC=25 C TJ=175 C Single Pulse 10 -1 10 0 10 1 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 - 69