CET3252

CET3252 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 8A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D PRELIMINARY D G SOT-223 D S G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C ±20 8 32 3 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2006.Nov http://www.cetsemi.com CET3252 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 2.3A VDS = 15V, ID = 5A, VGS = 10V VDD = 15V, ID = 5A, VGS = 10V, RGEN = 3Ω 10 4 25 5 12.5 1.7 2.7 5 1.2 20 8 50 10 16.6 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) Test Condition VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 8A VGS = 4.5V, ID = 6.4A 1.0 26 36 615 150 100 Min 30 1 100 -100 3.0 32 45 Typ Max Units V µA nA nA V mΩ mΩ pF pF pF Ciss Coss Crss VDS = 15V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 CET3252 20 VGS=10,9,8,7,6V 12 VGS=5V ID, Drain Current (A) 15 ID, Drain Current (A) 9 10 VGS=4V 6 25 C 3 TJ=125 C -55 C 5 VGS=3V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 900 750 600 450 300 150 0 Coss Crss 0 3 6 9 12 15 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=8A VGS=10V Ciss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=250µA 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CET3252 VGS, Gate to Source Voltage (V) 10 V =15V DS ID=5A 10 2 ID, Drain Current (A) 8 6 4 2 0 RDS(ON)Limit 10 1 1ms 10ms 1s 10 0 DC 10 -1 0 3 6 9 12 15 10 -2 TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT 10% VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 10 -1 0.1 0.05 0.02 PDM t1 t2 10 -2 0.01 Single Pulse 10 -3 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4