2SA1037M1PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT General Purpose PNP Transistor V OLTAGE 50 Volts APPLICATION * Small Power Amplifier . 2 SA1037M1PT CURRENT 0.15 Ampere FEATURE * Small surface mounting type. (FBPT-723) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-50mA) * Low cob. Cob=4.0pF(Typ.) * PC= 150mW (Collector power dissipation). 0.5±0.05 1.2±0.05 FBPT-723 CONSTRUCTION * PNP Silicon Transistor * Epitaxial planner type 0.05±0.04 0.84±0.05 0.32±0.05 0.15(REF.) 0.47(REF.) (3) 1.2±0.05 CIRCUIT (1) B C (3) 0.28±0.05 (2) (1) 0.23(REF.) 0.22±0.05 E (2) 0.25±0.05 Dimensions in millimeters FBPT-723 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Collector Power Dissipation Storage Temperature Junction Temperature TA ≤ 25OC CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC PTOT TSTG TJ MIN. -55 MAX. -60 -50 -6 -150 150 +150 +150 UNITS Volts Volts Volts mAmps mW o C C o 2007-01 Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. RATING CHARACTERISTICS ( 2SA1037M1PT) ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION VCB=-60V VEB=-6V VCE=-6V; Note 1 IC=-1mA; Note 2 SYMBOL ICBO IEBO MIN. TYPE MAX. -0.1 -0.1 UNITS uA uA DC Current Gain hFE 120 - 560 Collector-Emitter Saturation Voltage Collector-Emitter Breakdown Voltage Output Collector Capacitance Transition Frequency IC=-50mA; IB=-5mA IC=-1uA IE=ie=0; VCB=-12V; f=1MHz IE=2mA; VCE=-12V; f=30MHz VCEsat VCEO Cob fT -50 - 4.0 140 -0.5 Volts Volts pF MHz 5.0 - Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. 2. hFE: Classification Q: 120 to 270, R: 180 to 390, S: 270 to 560 RATING CHARACTERISTIC CURVES ( 2SA1037M1PT) Fig.1 −50 COLLECTOR CURRENT : Ic (mA) Grounded emitter propagation characteristics Ta=100˚C 25˚C −40˚C VCE=−6V COLLECTOR CURRENT : IC (mA) Fig.2 −10 Grounded emitter output characteristics (1) Fig.3 −100 COLLECTOR CURRENT : IC (mA) −35.0 Grounded emitter output characteristics (2) Ta=25˚C −20 −10 −5 −2 −1 −0.5 −0.2 −0.1 −31.5 Ta=25˚C −8 −28.0 −80 −24.5 −6 −21.0 −60 −500 −450 −400 −350 −300 −250 −200 −17.5 −4 −14.0 −40 −150 −100 −10.5 −2 −7.0 −3.5µA −20 −50µA −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 BASE TO EMITTER VOLTAGE : VBE (V) 0 −0.4 −0.8 −1.2 IB=0 −1.6 −2.0 IB=0 0 −1 −2 −3 −4 −5 COLLECTOR TO MITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) RATING CHARACTERISTIC CURVES ( 2SA1037M1PT) Fig.4 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −1 500 Fig.5 DC current gain vs. collector current Ta=100˚C 25˚C Fig. 6 Gain bandwidth product vs. emitter current 1000 lC/lB=10 DC CURRENT GAIN : hFE −0.5 TRANSITION FREQUENCY : fT (MHz) Ta=25˚C VCE=−12V 500 200 −40˚C −0.2 Ta=100˚C 25˚C −40˚C 100 200 −0.1 100 50 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 VCE=−6V −5 −10 −20 −50 −100 50 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA)