CH847UPNPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP&NPN Muti-Chip General Purpose Transistor VOLTAGE 45 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. C H847UPNPT CURRENT 100 mAmperes FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated PNP and NPN transistors in one package. (1) (6) SC-88/SOT-363 1.2~1.4 0.65 0.65 2.0~2.2 CONSTRUCTION * PNP and NPN transistors in one package. (4) 0.15~0.35 (3) 1.15~1.35 0.08~0.15 0.1 Min. C1 B2 5 E2 4 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 6 TR2 TR1 1 E1 2 B1 3 C2 Dimensions in millimeters SC-88/SOT-363 LIMITING VALUES of TR1( NPN Transistor ) In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VCES VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-01 PARAMETER collector-base voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open emitter open collector − − − − − − − Tamb ≤ 25 °C; note 1 − MIN. MAX. 50 45 50 6.0 100 200 200 200 +150 150 +150 V V V V UNIT mA mA mA mW °C °C °C −55 − −55 RATING CHARACTERISTIC ( CH847UPNPT ) LIMITING VALUES of TR2(PNP Transistor ) In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VCES VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 625 UNIT W/ °C PARAMETER collector-base voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open emitter open collector − − − − − − − T amb ≤ 25 °C; note 1 − MIN. MAX. -50 -45 -50 -5.0 -100 -200 -200 200 +150 150 +150 V V V V UNIT mA mA mA mW °C °C °C −55 − −55 Note 1. Transistor mounted on an FR4 printed-circuit board. RATING CHARACTERISTIC ( CH847UPNPT ) CHARACTERISTICS of TR1 ( NPN Transistor ) Tamb = 25 °C unless otherwise specilped. SYMBOL ICBO IEBO hFE VCEsat VBEsat VBEon CCBO fT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. CHARACTERISTICS of TR2( PNP Transistor ) Tamb = 25 °C unless otherwise specilped. SYMBOL ICBO IEBO hFE VCEsat VBEsat VBEon CCBO fT PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector-base capacitance transition frequency CONDITIONS VCB = 30 V VCB = 30 V; TA = 125 OC IC = 0; VEB = - 5 V IC = -2.0 mA; VCEI = -5.0V IC = 10 mA ; I B = 0.5 mA IC = 100 mA ; I B = 5.0 mA IC = 10 mA ; I B = 0.5 mA IC = 100 mA ; I B = 5.0 mA IC = 2.0 mA ; V cE = 5 V IC = 10.0 mA ; V CE = 5 V IE = ie = 0; VCB = - 10V ; f = 1 MHz IC = -10mA; VCE = -5V ; f = 100 MHz − − − 200 − − − − -600 − − 100 MIN. − − − 290 -75 -250 -700 -850 -650 − 3.0 200 TYP. MAX. -15 -4.0 -0.1 450 -300 -650 − -950 -750 -820 4.5 − mV mV mV mV mV mV pF MHz UNIT nA uA uA PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector-base capacitance transition frequency CONDITIONS VCB = 30 V VCB = 30 V; TA = 125 OC IC = 0; VEB = 5 V IC = 2.0 mA; VCE = 5.0V; note 1 IC = 10 mA ; I B = 0.5 mA IC = 100 mA ; I B = 5.0 mA IC = 10 mA ; I B = 0.5 mA IC = 100 mA ; I B = 5.0 mA IC = 2.0 mA ; V cE = 5 V IC = 10.0 mA ; V CE = 5 V I E = ie = 0; VCB = 1 0V ; f = 1 MHz IC = 10 mA; VCE = 5V ; f = 100 MHz − − − 200 − − − − 580 − − 100 MIN. − − − − 90 200 700 900 660 − 3.5 300 TYP. MAX. 15 5.0 0.1 450 250 600 − − 700 720 6.0 − mV mV mV mV mV mV pF MHz UNIT nA uA uA Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.